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Kazuichiro Itonaga patents

Recent patents with Kazuichiro Itonaga listed as an inventor - additional entries may be under other spellings.


Kazuichiro Itonaga - Related organizations: Sony Corporation patents

Imaging unit, lens barrel, and portable terminal

01/05/17 - 20170005125 - To obtain an imaging unit, a lens barrel, and a portable terminal which can effectively suppress spring-back of solid-state imaging elements, while facilitating height lowering thereof. An imaging unit includes: a solid-state imaging element; and an imaging lens for forming a subject image on a photoelectric conversion part of the
Inventors: Kazuichiro Itonaga, Eigo Sano, Nobuyoshi Mori, Joji Wada, Atsushi Morimura, Yuichi Takenaga, Takayoshi Hasegawa, Makato Tsunoda

Solid-state imaging device and electronic apparatus

11/17/16 - 20160336364 - A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.
Inventors: Kazuichiro Itonaga, Shizunori Matsumoto

Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus

09/22/16 - 20160276392 - A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in
Inventors: Takuji Matsumoto, Keiji Tatani, Yasushi Tateshita, Kazuichiro Itonaga

Solid-state imaging device and manufacturing method thereof

09/08/16 - 20160260766 - A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The photoelectric conversion unit and the transistor constitute a pixel. The element separation region is formed of a semiconductor region of a conductivity type opposite to
Inventors: Kazuichiro Itonaga

Solid-state imaging device and electronic apparatus

07/14/16 - 20160204160 - A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.
Inventors: Kazuichiro Itonaga, Shizunori Matsumoto

Solid-state imaging device

07/14/16 - 20160204148 - An imaging device that includes a substrate, a photoelectric conversion section disposed in the substrate, an element isolation region disposed adjacent to the photoelectric conversion section, a floating diffusion electrically connected to the photoelectric conversion section, an amplification transistor having a gate electrode and an active region, and a contact
Inventors: Kazuichiro Itonaga

Solid-state imaging device and electronic apparatus

01/07/16 - 20160006970 - A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.
Inventors: Kazuichiro Itonaga, Shizunori Matsumoto

Solid-state imaging device and camera

01/07/16 - 20160005783 - A solid-state imaging device including is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating
Inventors: Kazuichiro Itonaga, Yu Oya

Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus

12/31/15 - 20150380456 - A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in
Inventors: Takuji Matsumoto, Keiji Tatani, Yasushi Tateshita, Kazuichiro Itonaga

Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus

04/30/15 - 20150115341 - A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in
Inventors: Takuji Matsumoto, Keiji Tatani, Yasushi Tateshita, Kazuichiro Itonaga

Solid-state imaging device and electronic apparatus

04/02/15 - 20150092094 - A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.
Inventors: Kazuichiro Itonaga, Shizunori Matsumoto

Method of manufacturing solid-state imaging element, solid-state imaging element and electronic apparatus

01/01/15 - 20150002711 - A method of manufacturing a solid-state imaging element includes: manufacturing an element chip in which photoelectric conversion units are arranged on a main surface side; preparing a base configured using a material with an expansion coefficient greater than the element chip and having an opening of which the periphery of
Inventors: Kazuichiro Itonaga

Solid-state imaging device and electronic apparatus

07/03/14 - 20140184864 - A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.
Inventors: Kazuichiro Itonaga, Shizunori Matsumoto

Solid-state imaging device

11/14/13 - 20130299887 - A solid-state imaging device that includes a pixel including a photoelectric conversion section, and a conversion section that converts an electric charge generated by photoelectric conversion into a pixel signal. In the solid-state imaging device, substantially only a gate insulation film is formed on a substrate corresponding to an area
Inventors: Kazuichiro Itonaga

Semiconductor device and method of manufacturing the same, and electronic apparatus

10/31/13 - 20130285186 - A semiconductor device comprising a first semiconductor section including a first wiring layer at one side thereof, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the
Inventors: Kazuichiro Itonaga, Machiko Horiike

Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus

10/31/13 - 20130285131 - A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in
Inventors: Takuji Matsumoto, Keiji Tatani, Yasushi Tateshita, Kazuichiro Itonaga

Solid-state imaging device and camera

02/28/13 - 20130049083 - A solid-state imaging device including is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating
Inventors: Kazuichiro Itonaga, Yu Oya

Method of manufacturing solid-state imaging element, solid-state imaging element and electronic apparatus

08/30/12 - 20120217606 - A method of manufacturing a solid-state imaging element includes: manufacturing an element chip in which photoelectric conversion units are arranged on a main surface side; preparing a base configured using a material with an expansion coefficient greater than the element chip and having an opening of which the periphery of
Inventors: Kazuichiro Itonaga

Solid-state imaging device and electronic apparatus

06/21/12 - 20120154657 - A solid-state imaging device including a photoelectric conversion portion; a floating diffusion region; a transfer gate electrode made of an n-type semiconductor; a sidewall made of an n-type semiconductor formed on the photoelectric conversion portion side of the transfer gate electrode with an insulating film therebetween; and a sidewall made
Inventors: Kazuichiro Itonaga

Solid-state imaging device, method of producing the same, and imaging device

05/03/12 - 20120104479 - A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of
Inventors: Takuji Matsumoto, Tetsuji Yamaguchi, Keiji Tatani, Yutaka Nishimura, Kazuichiro Itonaga, Hiroyuki Mori, Norihiro Kubo, Fumihiko Koga, Shinichiro Izawa, Susumu Ooki

Solid-state imaging device and electronic equipment

04/26/12 - 20120098081 - A backside illumination type solid-state imaging device includes stacked semiconductor chips which are formed such that two or more semiconductor chip units are bonded to each other, at least a first semiconductor chip unit is formed with a pixel array and a first multi-layered wiring layer, and a second semiconductor
Inventors: Machiko Horiike, Kazuichiro Itonaga

Solid-state imaging device and manufacturing method thereof

03/01/12 - 20120049254 - A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The photoelectric conversion unit and the transistor constitute a pixel. The element separation region is formed of a semiconductor region of a conductivity type opposite to
Inventors: Kazuichiro Itonaga

Semiconductor device and method of manufacturing the same, and electronic apparatus

06/30/11 - 20110157445 - A semiconductor device comprising a first semiconductor section including a first wiring layer at one side thereof, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the
Inventors: Kazuichiro Itonaga, Machiko Horiike

Solid-state imaging device, manufacturing method thereof, and electronic apparatus

03/03/11 - 20110049590 - A solid-state imaging device that includes at least one pixel. The pixel includes a photodiode, a floating diffusion element in a region of the photodiode and a read out gate electrode at least partially surrounding the floating diffusion element in plan view.
Inventors: Kazuichiro Itonaga

Solid-state imaging device, method of manufacturing the same, and electronic apparatus

09/30/10 - 20100245637 - A solid-state imaging device includes: an on-chip color filter having color filter components formed to correspond to pixels; light-shielding members each formed at the boundary of adjacent color filter components; and lenses concave toward a light incident direction, each formed directly below a corresponding one of the color filter components
Inventors: Kazuichiro Itonaga

Solid-state imaging device, manufacturing method of the same, and electronic apparatus

09/30/10 - 20100243864 - A solid-state imaging device includes plural photodiodes which are formed in a photodiode area of a unit pixel with no element separating area interposed therebetween and in which impurity concentrations of pn junction areas are different from each other.
Inventors: Kazuichiro Itonaga

Solid-state imaging device and electronic apparatus

07/15/10 - 20100177226 - A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.
Inventors: Kazuichiro Itonaga, Shizunori Matsumoto

Solid-state imaging element and method for producing the same

07/01/10 - 20100167450 - There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region
Inventors: Hideo Kido, Kazuichiro Itonaga, Kai Yoshitsugu, Kenichi Chiba

Solid-state imaging device and manufacturing method thereof

07/01/10 - 20100167448 - A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The photoelectric conversion unit and the transistor constitute a pixel. The element separation region is formed of a semiconductor region of a conductivity type opposite to
Inventors: Kazuichiro Itonaga

Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus

02/04/10 - 20100026866 - A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of a MOS transistor
Inventors: Takuji Matsumoto, Keiji Tatani, Yasushi Tateshita, Kazuichiro Itonaga

Solid-state imaging device, method of producing the same, and imaging device

02/04/10 - 20100025569 - A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of
Inventors: Takuji Matsumoto, Tetsuji Yamaguchi, Keiji Tatani, Yutaka Nishimura, Kazuichiro Itonaga, Hiroyuki Mori, Norihiro Kubo, Fumihiko Koga, Shinichiro Izawa, Susumu Ooki

Solid-state imaging device and electronic apparatus

12/31/09 - 20090322919 - A solid-state imaging device includes: a photoelectric conversion portion; a floating diffusion region; a transfer gate electrode made of an n-type semiconductor; a sidewall made of an n-type semiconductor formed on the photoelectric conversion portion side of the transfer gate electrode through an insulating film; and a sidewall made of
Inventors: Kazuichiro Itonaga

Solid-state imaging devices and electronic devices

11/19/09 - 20090284630 - A solid-state imaging device is disclosed. The solid-state image device has pixels in which an absorption film that absorbs short wavelength-side light is formed on a photoelectric conversion portion for desired color light through an insulation film.
Inventors: Kazuichiro Itonaga

Solid-state imaging device, method of manufacturing the same, and camera

04/02/09 - 20090086066 - Disclosed is a solid-state imaging device includes for each pixel a photoelectric conversion unit, a charge accumulating portion, and a potential barrier provided between the photoelectric conversion unit and the charge accumulating portion, in a thickness direction of a substrate. When light is received, a first charge derived from one
Inventors: Kazuichiro Itonaga


### Kazuichiro Itonaga patent invention listings

The bibliographic references displayed about Kazuichiro Itonaga's patents are for a recent sample of Kazuichiro Itonaga's publicly published patent applications. The inventor/author may have additional bibliographic citations listed at the USPTO.gov. FreshPatents.com is not associated or affiliated in any way with the author/inventor or the United States Patent/Trademark Office but is providing this non-comprehensive sample listing for educational and research purposes using public bibliographic data published and disseminated from the United States Patent/Trademark Office public datafeed. This information is also available for free on the USPTO.gov website. If Kazuichiro Itonaga filed recent patent applications under another name, spelling or location then those applications could be listed on an alternate page. If no bibliographic references are listed here, it is possible there are no recent filings or there is a technical issue with the listing--in that case, we recommend doing a search on the USPTO.gov website.

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