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Jerry R. Meyer patentsRecent bibliographic sampling of Jerry R. Meyer patents listed/published in the public domain by the USPTO (USPTO Patent Application #,Title):
09/19/13 - 20130243020 - Epitaxial-side-down mounted high-power semiconductor lasers
A laser apparatus configured for epitaxial-side-down mounting on a heat sink. The laser apparatus includes a semiconductor laser structure and at least one post on a substrate where the laser structure and post are separated from each other by a channel. The laser structure and the posts optionally are coated...
Inventors: Chul Soo Kim, William W. Bewley, Mijin Kim, Charles D. Merritt, Chadwick Lawrence Canedy, Joshua Abell, Igor Vurgaftman, Jerry R. Meyer (The Government Of The United States Of America, As Represented By The Secretary Of The Navy)
02/28/13 - 20130048063 - Multijunction solar cells lattice matched to inp using sb-containing alloys
A multijunction (MJ) solar cell grown on an InP substrate using materials that are lattice-matched to InP. In an exemplary three-junction embodiment, the top cell is formed from In1-xAlxAs1-ySby (with x and y adjusted so as to achieve lattice-matching with InP, hereafter referred to as InAlAsSb), the middle cell from...
Inventors: Robert J. Walters, Phillip Jenkins, Maria Gonzalez, Igor Vurgaftman, Jerry R. Meyer, Joshua Abell, Matthew P. Lumb, Michael K. Yakes, Joseph G. Tischler, Cory Cress, Nicholas Ekins-daukes, Paul Stavrinou, Jessica Adams, Ngai Chan (The Government Of The United States Of America, As Represented By The Secretary Of The Navy)
10/25/12 - 20120269221 - Interband cascade lasers with engineered carrier densities
Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of...
Inventors: Igor Vurgaftman, Jerry R. Meyer, Chadwick Lawrence Canedy, William W. Bewley, Chulsoo Kim, Mijin Kim, Charles D. Merritt (The Government Of The United States Of America, As Represented By The Secretary Of The Navy)
05/24/12 - 20120128018 - Interband cascade lasers
A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the...
Inventors: Igor Vurgaftman, Jerry R. Meyer, Chadwick L. Canedy, William W. Bewley, James R. Lindle, Chul-soo Kim, Mijin Kim (The Government Of The United States Of America, As Represented By The Secretary Of The Navy)
05/24/12 - 20120127564 - High-temperature interband cascade lasers
An interband cascade gain medium is provided. The gain medium can include at least one thick separate confinement layer comprising Ga(InAlAs)Sb between the active gain region and the cladding and can further include an electron injector region having a reduced thickness, a hole injector region comprising two hole quantum wells...
Inventors: Igor Vurgaftman, Jerry R. Meyer, Chadwick L. Canedy, William W. Bewley, James R. Lindle, Chul-soo Kim, Mijin Kim (The Government Of The United Of America, As Represented By The Secretary Of The Navy)
09/08/11 - 20110215705 - Micro-chip plasmonic source
A surface plasmon polariton device that may be integrated onto a single microchip is disclosed. The device employs a laser that emits polarized light across a gap into a plasmonic waveguide. Surface plasmon polaritons are thereby created in an efficient matter. The device provides a source of surface plasmon polaritons...
Inventors: James Peter Long, Chul-soo Kim, James R. Lindle, Jerry R. Meyer, Igor Vurgaftman
04/22/10 - 20100097690 - High-temperature interband cascade lasers
A gain medium and an interband cascade laser, an interband cascade amplifier, and an external cavity laser having the gain medium are presented. The gain medium can include any one or more of the following features: (1) the active quantum well region includes a thick and In-rich GaInSb hole well;...
Inventors: Igor Vurgaftman, Jerry R. Meyer (The Government Of The United States Of America, As Represented By The Secretary Of The Navy)
(*May have duplicates - we are upgrading our archive.)
20130003770 - Interband cascade lasers
The bibliographic references displayed about Jerry R. Meyer's patents are for a recent sample of Jerry R. Meyer's publicly published patent applications. The inventor/author may have additional bibliographic citations listed at the USPTO.gov. FreshPatents.com is not associated or affiliated in any way with the author/inventor or the United States Patent/Trademark Office but is providing this non-comprehensive sample listing for educational and research purposes using public bibliographic data published and disseminated from the United States Patent/Trademark Office public datafeed. This information is also available for free on the USPTO.gov website. If Jerry R. Meyer filed recent patent applications under another name, spelling or location then those applications could be listed on an alternate page. If no bibliographic references are listed here, it is possible there are no recent filings or there is a technical issue with the listing--in that case, we recommend doing a search on the USPTO.gov website.
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