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Integrated pump apparatus for semiconductor processingRelated Patent Categories: Pumps, Diverse PumpsIntegrated pump apparatus for semiconductor processing description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20070020115, Integrated pump apparatus for semiconductor processing. Brief Patent Description - Full Patent Description - Patent Application Claims
FIELD OF THE INVENTION [0001] The invention relates to an integrated pump apparatus for use in semiconductor processing. The apparatus may include a turbomolecular pump and a dry pump positioned no more than about 20 centimeters away from each other. The turbomolecular pump and dry pump may share at least one of a common housing and a common controller. The apparatus may also include at least one of an abatement device and a cryogenic water pump. BACKGROUND OF THE INVENTION [0002] Semiconductor wafers are used to form a number of different types of devices. For example, wafers, or portions of wafers, may be used to form memory devices, microprocessor unit devices, or combinations of the two devices. The devices may be very small, (e.g., on the order of only one Micron), and thus these devices are often manufactured in large batches. In some instances, a single wafer may have hundreds of devices manufactured on it. [0003] In order to manufacture a device on a wafer, a number of discrete steps are performed. Although the number of steps may vary greatly depending on the type and complexity of the device, a typical manufacturing process may include anywhere between 100 and 300 individual steps between the initial step of providing an initial substrate and the finals step of extracting individual devices from the wafer and installing them in personal computers, telephones, mobile phones, or other electronic equipment. [0004] Some of the steps in semiconductor wafer processing may include etching away selected material, depositing selected materials, and performing selective ion implantation in the silicon wafer. Many of these steps are performed by tools especially designed for the particular step, but several steps may also be performed by a single tool. Because these steps may be performed in a variety of locations, the wafer may often be moved. For example, the wafer may be placed in and taken out of ion implanter tools, transported by cassettes, placed in and taken out of deposition tools, and placed in and taken out of etch tools, etc. [0005] As mentioned above, etching is one form of processing that may be performed on a wafer. The wafer may be etched a number of different times at a number of different levels for a number of different reasons. For example, one type of etching step includes placing a photoresist type material over an area of the wafer. The photoresist on the wafer may be then be exposed to a light source with a specific wavelength and a specific pattern. The exposure of the photoresist to the light source may alter the chemical composition of the exposed area such that the photoresist either "hardens" so that when a chemical is applied the "hardened" photoresist remains, or "softens" so that when a chemical is applied the "softened" photoresist is removed. In either case, a desired photoresist pattern remains on the wafer. Using this remaining photoresist as a mask, chemical substances may be applied to the wafer so as to etch away or remove exposed portions of the wafer. Thus, a desired pattern may be "etched" into the silicon wafer. [0006] The devices and/or patterns that are etched into the wafer often have dimensions that are on the order of one micron. Because the dimensions being dealt with are so small, etching processes are especially susceptible to contaminants. For example, foreign molecules may become lodged in the channels etched into the wafers, and the existence of such flaws may prevent a device or portions of the device from working properly. Accordingly, in order to minimize these flaws, much attention is paid to the method by which the etching is performed, specifically by working to minimize the number of contaminants in the system. [0007] The most common method of controlling the etching is by etching in a vacuum chamber using a plasma. The vacuum chamber is, by definition, kept at a low pressure, for example, between pressures of about 10.sup.-3 millibar and about 10.sup.-1 millibar. The plasma used to etch the wafers may include the addition of any number of substances, such as fluorocarbons or perflourocarbons, which within the plasma may be broken up into smaller portions, such as fluorine and fluorine radicals. These smaller portions react with the exposed portions of the wafer and "etch away" that portion of the wafer through the formation of volatile reactant by-products. Other substances may be used depending on the substrate to be etched. Performing this procedure under vacuum substantially prevents contaminants from entering the system, as the chemicals present are normally only those specifically introduced into the system and the reduced pressure may moderate the reaction rate as the molecular density may be lower. [0008] In a number of current etching procedures, a large number of reactants are run past the wafer at high speeds, for example, on the order of thousands of liters per second. This runs contrary to the desire to minimize the number of contaminants by keeping the pressure in the vacuum chamber low. What results is a desire to pass etching substances through the vacuum chamber at high speeds, but low pressures, and thus specialized pumps are often desired. [0009] Currently, there are two discrete, completely separate, unintegrated pumps used in conjunction with each other to provide a high flow rate of etching substance at low pressures. The pumps have, among things, separate housings, separate controllers, separate electrical connections, and separate fluid connections, and are located long distances away from one another in different rooms of a wafer processing facility. [0010] In some current configurations, an inlet of a first pump is bolted to the bottom of the vacuum chamber and receives the substances from the vacuum chamber that are flowing at the low pressures. The first pump then gradually increases the pressure of the substance flow from the molecular level (at the inlet) to about the transition level (at the outlet). The substance flow is then sent through a tube or pipe to a second pump which is located in another room, for example, a basement of the wafer processing facility. The second pump is currently located in another room of the wafer processing facility for several reasons, most prominent of which are its size, the amount of noise it generates, and its maintenance. The flow path (e.g. tube) connecting the pumps is typically between 5 and 15 meters in length, with a minimum length of 3 meters and a maximum length of 20 meters. The second pump gradually increases the pressure of the substance flow from about the transition level (at the inlet) to about atmospheric pressure (at the outlet). The second pump then exhausts the substance flow. [0011] There are some drawbacks associated with the current dual pump arrangement. For example, having the second pump in a room separate from the first pump is often an inefficient use of space. In addition, there are efficiency losses associated with flowing the substances through a long tube connecting the pumps. Accordingly, alternative arrangements and/or configurations of multiple pumps are desired. SUMMARY OF THE INVENTION [0012] In the following description, certain aspects and embodiments of the invention will become evident. It should be understood that the invention, in its broadest sense, could be practiced without having one or more features of these aspects and embodiments. It should also be understood that these aspects and embodiments are merely exemplary. [0013] One aspect, as embodied and broadly described herein, may relate to an apparatus for use in semiconductor processing. The apparatus may include a turbomolecular pump and a dry pump, and the turbomolecular pump and the dry pump may be coupled together so as to position the turbomolecular pump and the dry pump no more than about 20 centimeters from one another. [0014] In a further aspect, an apparatus for use in semiconductor processing may include a turbomolecular pump and a dry pump coupled to the turbomolecular pump. The apparatus may include at least one of a common housing associated with both of the pumps and a common controller associated with both of the pumps. [0015] Still another aspect may relate to an apparatus that may include a turbomolecular pump, a dry pump coupled to the turbomolecular pump, and a semiconductor processing tool associated with the turbomolecular pump and the dry pump. The turbomolecular pump, the dry pump, and the semiconductor processing tool may be disposed in a single room of a facility where semiconductors are processed. [0016] Various aspects may include one or more optional features. For example, the turbomolecular pump and the dry pump may be coupled together so as to position the turbomolecular pump and the dry pump no more than about 10 centimeters from one another; the turbomolecular pump and the dry pump may be coupled together so as to position the turbomolecular pump and the dry pump no more than about 0.5 centimeters from one another; the apparatus may include at least one of a common housing associated with both of the pumps and a common controller associated with both of the pumps; the apparatus may include a semiconductor processing tool associated with the turbomolecular pump and the dry pump; the turbomolecular pump, the dry pump, and the semiconductor processing tool may be disposed in a single room of a facility where semiconductors are processed; the boundary between the turbomolecular pump and the dry pump may not be externally discernable; the apparatus may include only one electrical connection configured to provide electrical power input to both of the pumps; the apparatus may include only one fluid connection configured to provide fluid to at least one of the pumps; the apparatus may include only one cooling water connection configured to provide cooling water to at least one of the pumps; the apparatus may include only one nitrogen connection configured to provide nitrogen to at least one of the pumps; the apparatus may include only one clean dry air connection configured to provide clean dry air to at least one of the pumps; the apparatus may include a common controller; the common controller may control both the turbomolecular pump and the dry pump; the apparatus may include a cryogenic water pump; the common controller may be associated with the cryogenic water pump; the common controller may control the turbomolecular pump, the dry pump, and the cryogenic water pump; the apparatus may include an abatement device; the common controller may be associated with the abatement device; and the common controller may control the turbomolecular pump, the dry pump, and the abatement device. [0017] Aside from the structural relationships discussed above, the invention could include a number of other forms such as those described hereafter. It is to be understood that both the foregoing description and the following description are exemplary only. BRIEF DESCRIPTION OF THE DRAWINGS [0018] The accompanying drawings, which are incorporated in and constitute a part of this specification. The drawings illustrate several embodiments of the invention and, together with the description, serve to explain some principles of the invention. In the drawings: [0019] FIG. 1 is a schematic view of an embodiment of an apparatus in accordance with the present invention; [0020] FIG. 2 is a schematic view of another embodiment of the apparatus; Continue reading about Integrated pump apparatus for semiconductor processing... 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