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04/27/06 - USPTO Class 438 |  148 views | #20060088971 | Prev - Next | About this Page  438 rss/xml feed  monitor keywords

Integrated inductor and method of fabrication

USPTO Application #: 20060088971
Title: Integrated inductor and method of fabrication
Abstract: An inductor structure comprised of a magnetic section and a single turn solenoid. The single turn solenoid to contain within a portion of the magnetic section and circumscribed by the magnetic section. (end of abstract)



Agent: Intel/blakely - Los Angeles, CA, US
Inventors: Ankur Mohan Crawford, Henning Braunisch, Rajendran Nair, Gilroy Vandentop, Shan X. Wang
USPTO Applicaton #: 20060088971 - Class: 438381000 (USPTO)

Related Patent Categories: Semiconductor Device Manufacturing: Process, Making Passive Device (e.g., Resistor, Capacitor, Etc.)

Integrated inductor and method of fabrication description/claims


The Patent Description & Claims data below is from USPTO Patent Application 20060088971, Integrated inductor and method of fabrication.

Brief Patent Description - Full Patent Description - Patent Application Claims
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BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to the field of semiconductor devices and more specifically to an integrated inductor structure and its method of fabrication.

[0003] 2. Discussion of Related Art

[0004] The need for inductors in semiconductor design dictates the use of discrete inductors or spiral inductors. The discrete inductor is in an off-chip, off-package configuration and requires long interconnects to connect the inductor to the chip. These interconnects have high impedances and result in large ohmic losses. Also, discrete inductors require extra space outside the chip package, which is difficult to provide for in high-density circuit board fabrication.

[0005] Spiral inductors are created through windings of metal thin films, usually on a silicon substrate. The first drawback of spiral inductors includes the large area necessary to create large inductances. Another drawback of spiral inductors includes the tendency of the inductors to have high resistances. This high resistance deteriorates the quality factor of the inductors making them too lossy for such applications as power delivery. Furthermore, spiral inductors force the magnetic flux into the silicon substrate causing both eddy current losses and interference with devices.

SUMMARY

[0006] An inductor structure comprised of a magnetic section and a single turn solenoid. The single turn solenoid to contain within a portion of the magnetic section and circumscribed by the magnetic section.

BRIEF DESCRIPTION OF THE DRAWINGS

[0007] FIG. 1a is an illustration of a cross-sectional view of an embodiment of the inductor structure.

[0008] FIG. 1b is an illustration of an overhead view of an embodiment of the inductor structure.

[0009] FIG. 2a is a circuit diagram of an embodiment of a buck converter circuit with the switch in the on position.

[0010] FIG. 2b is a circuit diagram of an embodiment of a buck converter circuit with the switch in the off position

[0011] FIG. 3 is an illustration of an overhead view of an array of inductors.

[0012] FIG. 4 is an illustration of a cross-sectional view of an inductor structure incorporated into the build-up packaging layers of an integrated circuit package.

[0013] FIG. 5a is an illustration of a cross-sectional view of a seed layer and a photoresist mask formed on a package substrate for the formation of an inductor structure.

[0014] FIG. 5b is an illustration of a cross-sectional view of a package substrate and a conductive layer with a remaining seed layer for forming an inductor structure.

[0015] FIG. 5c is an illustration of a cross-sectional view of a package substrate and a conductive layer with a remaining exposed seed layer removed for forming an inductor structure.

[0016] FIG. 5d is an illustration of a cross-sectional view showing a magnetic material formed over a conductive layer and a package substrate for forming of an inductor structure.

[0017] FIG. 5e is an illustration of a cross-sectional view of formed trench regions in a magnetic layer for forming an inductor structure.

[0018] FIG. 5f is an illustration of a cross-sectional view of a second seed layer formed over a magnetic layer and the trench formations for forming an inductor structure.

[0019] FIG. 5g is an illustration of a cross-sectional view of a second photoresist mask formed over the second seed layer for forming an inductor structure.

[0020] FIG. 5h is an illustration of a cross-sectional view of the formed sidewalls through a magnetic material with a second and third conductive layer formed over the magnetic material for forming an inductor structure.

[0021] FIG. 5e' is an illustration of an overhead view of formed trench regions in a magnetic layer for forming an inductor structure.

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Previous Patent Application:
Electrode for electrolytic capacitor, electrolytic capacitor, and manufacturing method therefor
Next Patent Application:
Methods of fabricating integrated circuit devices having resistors with different resistivities and devices formed thereby
Industry Class:
Semiconductor device manufacturing: process

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