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09/14/06 | 4 views | #20060202309 | Prev - Next | USPTO Class 257 | About this Page  257 rss/xml feed  monitor keywords

Integrated circuit substrate material

USPTO Application #: 20060202309
Title: Integrated circuit substrate material
Abstract: A semiconductor substrate material is disclosed for producing a semiconductor substrate. In an embodiment, the semiconductor substrate material may include a multitude of hollow microspheres. Each one of the multitude of hollow microspheres may have an inner layer and an outer layer. The inner layer may include a first material, the outer layer may include a second material, and the first material and the second material may differ from one another. The first material of the inner layer of each of the multitude of hollow microspheres may have a first melting point, the second material of the outer layer of the multitude of hollow microspheres may have a second melting point, and the first melting point may be higher than the second melting point.
(end of abstract)
Agent: Agilent Technologies, Inc. Legal Department, Dl429 - Loveland, CO, US
Inventors: Marvin Glenn Wong, Arthur Fong
USPTO Applicaton #: 20060202309 - Class: 257618000 (USPTO)
Related Patent Categories: Active Solid-state Devices (e.g., Transistors, Solid-state Diodes), Physical Configuration Of Semiconductor (e.g., Mesa, Bevel, Groove, Etc.)
The Patent Description & Claims data below is from USPTO Patent Application 20060202309.
Brief Patent Description - Full Patent Description - Patent Application Claims  monitor keywords



REFERENCE TO PENDING PRIOR PATENT APPLICATION

[0001] This patent application is a continuation-in-part of pending prior U.S. patent application Ser. No. 10/629,271, filed Jul. 29, 2003 by Marvin Glenn Wong et al. for INTEGRATED CIRCUIT SUBSTRATE MATERIAL AND METHOD.

[0002] The above-identified patent application is hereby incorporated herein by reference.

BACKGROUND

[0003] Electronic components, such as integrated circuits are becoming more and more common in various devices. Under certain circumstances, it is important for the integrated circuit substrate to have various qualities or attributes. Often certain qualities are balanced against other qualities. It is sometimes important for the substrate to have low thermal conductivity, low mass, low cost, low dielectric constant, high strength, etc. Depending upon the application, some of these qualities may be less important than others and the design team makes trade-offs to maximize the desired qualities with the minimum weaknesses and costs.

[0004] Accordingly, there exists a need in the industry for materials that can be used for integrated circuit substrates that meet the different electrical and physical requirements of current electronics.

SUMMARY OF THE INVENTION

[0005] In one embodiment, there is disclosed a semiconductor substrate material for producing a semiconductor substrate, the semiconductor substrate material comprising a multitude of hollow microspheres, each one of the multitude of hollow microspheres having an inner layer and an outer layer, the inner layer comprising a first material, the outer layer comprising a second material, and the first material and the second material differing from one another, wherein the first material of the inner layer of each of the multitude of hollow microspheres has a first melting point, wherein the second material of the outer layer of the multitude of hollow microspheres has a second melting point, and wherein the first melting point is higher than the second melting point.

[0006] Other embodiments are also disclosed.

BRIEF DESCRIPTION OF THE DRAWINGS

[0007] A more complete appreciation of this invention, and many of the attendant advantages thereof, will be readily apparent as the same becomes better understood by reference to the following detailed description when considered in conjunction with the accompanying drawings in which like reference symbols indicate the same or similar components, wherein:

[0008] FIG. 1 illustrates a cross-sectional of a hollow microsphere in accordance with an embodiment of the present invention;

[0009] FIG. 2 illustrates a cross-sectional of a slurry of hollow microspheres in accordance with an embodiment of the present invention;

[0010] FIG. 3 illustrates a cross-sectional of a hardened matrix of hollow microspheres in accordance with an embodiment of the present invention;

[0011] FIG. 4 illustrates a flow chart for manufacturing a substrate in accordance with the embodiment of FIG. 3 of the present invention;

[0012] FIG. 5 illustrates a cross-sectional of a fired matrix of hollow microspheres in accordance with an embodiment of the present invention;

[0013] FIG. 6 illustrates a flow chart for manufacturing a substrate in accordance with the embodiment of FIG. 5 of the present invention;

[0014] FIG. 7 illustrates a cross-sectional view of a glass-coated, hollow microsphere in accordance with another embodiment of the present invention;

[0015] FIG. 8 illustrates a cross-sectional view of a slurry of glass-coated, hollow microspheres in accordance with another embodiment of the present invention;

[0016] FIG. 9 illustrates a cross-sectional view of a dried matrix of glass-coated, hollow microspheres in accordance with another embodiment of the present invention;

[0017] FIG. 10 illustrates a flow chart for manufacturing a substrate in accordance with the embodiment of FIG. 9 of the present invention;

[0018] FIG. 11 illustrates a cross-sectional view of a fired matrix of glass-coated, hollow microspheres in accordance with another embodiment of the present invention;

[0019] FIG. 12 illustrates a cross-sectional view of a glazed surface of a fired matrix of glass-coated, hollow microspheres in accordance with another embodiment of the present invention; and

[0020] FIG. 13 illustrates a flow chart for manufacturing a substrate in accordance with the embodiments of FIGS. 5, 11 or 12 of the present invention.

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Previous Patent Application:
Semiconductor device
Next Patent Application:
Film or layer of semiconducting material, and process for producing the film or layer
Industry Class:
Active solid-state devices (e.g., transistors, solid-state diodes)

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