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04/24/08 - USPTO Class 438 |  110 views | #20080096323 | Prev - Next | About this Page  438 rss/xml feed  monitor keywords

Integrated circuit die/package interconnect

USPTO Application #: 20080096323
Title: Integrated circuit die/package interconnect
Abstract: A system may include a plurality of pliant conductive elements, a first end of one of the plurality of pliant conductive elements to be electrically coupled to a first electrical contact of an integrated circuit substrate and a second end of the one of the plurality of pliant conductive elements to be electrically coupled to a second electrical contact of an integrated circuit die. (end of abstract)



Agent: Buckley, Maschoff & Talwalkar LLC - New Canaan, CT, US
Inventors: Gilroy J. Vandentop, Hamid R. Azimi
USPTO Applicaton #: 20080096323 - Class: 438117000 (USPTO)

Related Patent Categories: Semiconductor Device Manufacturing: Process, Packaging (e.g., With Mounting, Encapsulating, Etc.) Or Treatment Of Packaged Semiconductor, Incorporating Resilient Component (e.g., Spring, Etc.)

Integrated circuit die/package interconnect description/claims


The Patent Description & Claims data below is from USPTO Patent Application 20080096323, Integrated circuit die/package interconnect.

Brief Patent Description - Full Patent Description - Patent Application Claims
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BACKGROUND

[0001] An integrated circuit (IC) die may include electrical devices that are integrated with a semiconductor substrate. The IC die may also include conductive paths that electrically couple the electrical devices to one another and to external connections. The die may include several layers of conductive paths, with each layer separated from adjacent layers by an inter-layer dielectric (ILD). The ILD may comprise a material having an extremely low dielectric constant (k) in order to minimize capacitance coupling and crosstalk between the conductive paths.

[0002] Low-k ILD materials often exhibit a coefficient of thermal expansion (CTE) that differs significantly from other elements to which they are coupled, such as the other elements of an IC die and an IC package. Moreover, these materials are often brittle. Many low-k ILD materials are prone to cracking during IC die fabrication and/or operation due to these characteristics.

BRIEF DESCRIPTION OF THE DRAWINGS

[0003] FIG. 1 is a cutaway side view of an apparatus according to some embodiments.

[0004] FIG. 2A is a top view and FIG. 2B is a bottom view of an apparatus according to some embodiments.

[0005] FIG. 3 is a cutaway side view of an IC substrate, an IC die, and an apparatus according to some embodiments.

[0006] FIG. 4 is a diagram of a process to fabricate the FIG. 3 device according to some embodiments.

[0007] FIG. 5 is a side view of an integral conductive element according to some embodiments.

[0008] FIG. 6 is a side view of an integral conductive element in combination with pliant material according to some embodiments.

[0009] FIG. 7 is a side view of an integral conductive element, pliant material, and a carrier according to some embodiments.

[0010] FIG. 8 is a side view of an integral conductive element, pliant material, a carrier, and photoresist according to some embodiments.

[0011] FIG. 9 is a side view of an integral conductive element, pliant material, a carrier, and photoresist according to some embodiments.

[0012] FIG. 10 is a side view of a plurality of pliant conductive elements, pliant material, and a carrier according to some embodiments.

[0013] FIG. 11 is a cutaway side view of a plurality of pliant conductive elements, pliant material, second pliant material, and a carrier according to some embodiments.

[0014] FIG. 12 is a cutaway side view of an apparatus according to some embodiments.

[0015] FIG. 13 is a diagram of a process to fabricate the FIG. 3 device according to some embodiments.

[0016] FIG. 14 is a side view of a carrier and pliant elements according to some embodiments.

[0017] FIG. 15 is a side view of a carrier and pliant elements according to some embodiments.

[0018] FIG. 16 is a side view of an integral conductive element, pliant elements, and a carrier according to some embodiments.

[0019] FIG. 17 is a side view of an integral conductive element, pliant elements, a carrier, and photoresist according to some embodiments.

[0020] FIG. 18 is a side view of an integral conductive element, pliant elements, a carrier, and photoresist according to some embodiments.

[0021] FIG. 19 is a side view of a plurality of pliant conductive elements, pliant elements, and a carrier according to some embodiments.

[0022] FIG. 20 is a cutaway side view of a plurality of pliant conductive elements, pliant elements, second pliant material, and a carrier according to some embodiments.

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Brief Patent Description - Full Patent Description - Patent Application Claims

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Manufacturing method of semiconductor chip
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