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Hsin-Chih Tai patents

Recent bibliographic sampling of Hsin-Chih Tai patents listed/published in the public domain by the USPTO (USPTO Patent Application #,Title):



02/26/15 - 20150054106 - Dual-facing camera assembly
In some embodiments of the invention, a system having an array of frontside illuminated (FSI) imaging pixels is bonded to a system having an array of backside illuminated (BSI) imaging pixels, creating a camera assembly with a minimal size (e.g., a reduced thickness compared to prior art solutions). An FSI...
Inventors: Gang Chen, Ashish Shah, Duli Mao, Hsin-chih Tai, Howard E. Rhodes (Omnivision Technologies, Inc.)

02/19/15 - 20150048427 - Image sensor pixel cell with switched deep trench isolation structure
A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is disposed in the first region and coupled between the photodiode...
Inventors: Sing-chung Hu, Rongsheng Yang, Gang Chen, Howard E. Rhodes, Sohei Manabe, Hsin-chih Tai (Omnivision Technologies, Inc.)

12/25/14 - 20140374862 - Cmos image sensor with integrated silicon color filters
A color photosensor array has photosensors of a first type having a thick overlying silicon layer, photosensors of a second type having a thin overlying silicon layer, and photosensors of a third type having no overlying silicon layer; the photosensors of the first type having peak sensitivity in the red,...
Inventors: Chiaying Liu, Keh-chiang Ku, Dyson Hsinchih Tai, Wuzhang Yang (Omnivision Technologies, Inc.)

11/27/14 - 20140346572 - Image sensor pixel cell with global shutter having narrow spacing between gates
A pixel cell includes a photodiode, a storage transistor, a transfer transistor and an output transistor disposed in a semiconductor substrate. The transfer transistor selectively transfers image charge accumulated in the photodiode from the photodiode to the storage transistor. The output transistor selectively transfers the image charge from the storage...
Inventors: Gang Chen, Duli Mao, Hsin-chih Tai

10/16/14 - 20140306360 - Method of forming dual size microlenses for image sensors
A method of forming microlenses for an image sensor having at least one large-area pixel and at least one small-area pixel is disclosed. The method includes forming a uniform layer of microlens material on a light incident side of the image sensor over the large-area pixel and over the small-area...
Inventors: Jin Li, Gang Chen, Yin Qian, Hsin-chih Tai (Omnivision Technologies, Inc.)

10/09/14 - 20140299957 - Image sensor having metal contact coupled through a contact etch stop layer with an isolation region
An image sensor pixel includes one or more photodiodes disposed in a semiconductor layer. Pixel circuitry is disposed in the semiconductor layer coupled to the one or more photodiodes. A passivation layer is disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes. A...
Inventors: Sing-chung Hu, Dajiang Yang, Oray Orkun Cellek, Hsin-chih Tai, Gang Chen (Omnivision Technologies, Inc.)

10/09/14 - 20140299956 - Layers for increasing performance in image sensors
An imaging device includes a semiconductor substrate having a photosensitive element for accumulating charge in response to incident image light. The semiconductor substrate includes a light-receiving surface positioned to receive the image light. The imaging device also includes a negative charge layer and a charge sinking layer. The negative charge...
Inventors: Chih-wei Hsiung, Oray Orkun Cellek, Gang Chen, Duli Mao, Vincent Venezia, Hsin-chih Tai (Omnivision Technologies, Inc.)

09/04/14 - 20140246561 - High dynamic range pixel having a plurality of photodiodes with a single implant
A high dynamic range image sensor pixel includes a short integration photodiode and a long integration photodiode disposed in semiconductor material. The long integration photodiode has a light exposure area that is substantially larger than a light exposure area of the short integration photodiode. The light exposure area of the...
Inventors: Gang Chen, Dajiang Yang, Jin Li, Duli Mao, Hsin-chih Tai (Omnivision Technologies, Inc.)

08/28/14 - 20140239351 - Process to eliminate lag in pixels having a plasma-doped pinning layer
Embodiments of a process including depositing a sacrificial layer on the surface of a substrate over a photosensitive region, over the top surface of a transfer gate, and over at least the sidewall of the transfer gate closest to the photosensitive region, the sacrificial layer having a selected thickness. A...
Inventors: Gang Chen, Duli Mao, Hsin-chih Tai, Vincent Venezia, Yin Qian, Howard E. Rhodes (Omnivision Technologies, Inc.)

08/28/14 - 20140239154 - High dynamic range pixel having a plurality of amplifier transistors
A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A...
Inventors: Gang Chen, Zhiqiang Lin, Sing-chung Hu, Duli Mao, Hsin-chih Tai (Omnivision Technologies, Inc.)

08/28/14 - 20140239152 - Image sensor with pixel units having mirrored transistor layout
An image sensor includes a first pixel unit horizontally adjacent to a second pixel unit. Each pixel unit includes plurality of photodiodes and a shared floating diffusion region. A first pixel transistor region of the first pixel unit has a plurality of pixel transistors. A second pixel transistor region of...
Inventors: Gang Chen, Duli Mao, Hsin-chih Tai (Omnivision Technologies, Inc.)

08/21/14 - 20140231622 - Circuit structure for providing conversion gain of a pixel array
Techniques and mechanisms for a pixel array to provide a level of conversion gain. In an embodiment, the pixel array includes conversion gain control circuitry to be selectively configured at different times for different operational modes, each mode for implementing a respective conversion gain. The conversion gain control circuitry selectively...
Inventors: Duli Mao, Vincent Venezia, Gang Chen, Hsin-chih Tai, Howard Rhodes

07/31/14 - 20140210028 - Color filter including clear pixel and hard mask
Embodiments of an apparatus including a color filter arrangement formed on a substrate having a pixel array formed therein. The color filter arrangement includes a clear filter having a first clear hard mask layer and a second clear hard mask layer formed thereon, a first color filter having the first...
Inventors: Gang Chen, Duli Mao, Hsin-chih Tai, Howard E. Rhodes (Omnivision Technologies, Inc.)

05/08/14 - 20140124889 - Die seal ring for integrated circuit system with stacked device wafers
An integrated circuit system includes a first device wafer bonded to a second device wafer at a bonding interface of dielectrics. Each wafer includes a plurality of dies, where each die includes a device, a metal stack, and a seal ring that is formed at an edge region of the...
Inventors: Yin Qian, Hsin-chih Tai, Tiejun Dai, Duli Mao, Cunyu Yang, Howard E. Rhodes (Omnivision Technologies, Inc.)

04/17/14 - 20140103410 - Partial buried channel transfer device in image sensors
An image sensor pixel includes a photosensitive element, a floating diffusion (“FD”) region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The FD region is dispose in the substrate layer to receive the image charge from...
Inventors: Gang Chen, Hsin-chih Tai, Duli Mao, Zhenhong Fu (Omnivision Technologies, Inc.)

04/17/14 - 20140103189 - Compact in-pixel high dynamic range imaging
Embodiments of the invention describe providing a compact solution to provide high dynamic range imaging (HDRI or simply HDR) for an imaging pixel by utilizing a control node for resetting a floating diffusion node to a reference voltage value and for selectively transferring an image charge from a photosensitive element...
Inventors: Gang Chen, Duli Mao, Hsin-chih Tai, Howard E. Rhodes (Omnivision Technologies, Inc.)

03/27/14 - 20140084135 - Backside-illuminated photosensor array with white, yellow ad red-sensitive elements
A monolithic backside-sensor-illumination (BSI) image sensor has a sensor array is tiled with a multiple-pixel cells having a first pixel sensor primarily sensitive to red light, a second pixel sensor primarily sensitive to red and green light, and a third pixel sensor having panchromatic sensitivity, the pixel sensors laterally adjacent...
Inventors: Gang Chen, Duli Mao, Hsin-chih Tai (Omnivision Technologies, Inc.)

02/20/14 - 20140048897 - Pixel with negatively-charged shallow trench isolation (sti) liner
Embodiments of a pixel including a substrate having a front surface and a photosensitive region formed in or near the front surface of the substrate. An isolation trench is formed in the front surface of the substrate adjacent to the photosensitive region. The isolation trench includes a trench having a...
Inventors: Yin Qian, Hsin-chih Tai, Gang Chen, Duli Mao, Vincent Venezia, Howard E. Rhodes (Omnivision Technologies, Inc.)

01/16/14 - 20140014813 - Integrated circuit stack with integrated electromagnetic interference shielding
An integrated circuit system includes a first device wafer having a first semiconductor layer proximate to a first metal layer including a first conductor disposed within a first metal layer oxide. A second device wafer having a second semiconductor layer proximate to a second metal layer including a second conductor...
Inventors: Duli Mao, Hsin-chih Tai, Yin Qian, Tiejun Dai, Howard E. Rhodes, Hongli Yang (Omnivision Technologies, Inc.)

11/07/13 - 20130292751 - Image sensor with segmented etch stop layer
An apparatus includes a semiconductor layer having an array of pixels arranged therein. A passivation layer is disposed proximate to the semiconductor layer over the array of pixels. A segmented etch stop layer including a plurality of etch stop layer segments is disposed proximate to the passivation layer over the...
Inventors: Gang Chen, Duli Mao, Hsin-chih Tai (Omnivision Technologies, Inc.)

10/31/13 - 20130285183 - Dual-facing camera assembly
In some embodiments of the invention, a system having an array of frontside illuminated (FSI) imaging pixels is bonded to a system having an array of backside illuminated (BSI) imaging pixels, creating a camera assembly with a minimal size (e.g., a reduced thickness compared to prior art solutions). An FSI...
Inventors: Gang Chen, Ashish Shah, Duli Mao, Hsin-chih Tai, Howard E. Rhodes

10/10/13 - 20130264688 - Method and apparatus providing integrated circuit system with interconnected stacked device wafers
An integrated circuit system includes a first device wafer that has a first semiconductor layer proximate to a first metal layer including a first conductor disposed within a first metal layer oxide. A second device wafer that has a second semiconductor layer proximate to a second metal layer including a...
Inventors: Yin Qian, Hsin-chih Tai, Duli Mao, Tiejun Dai, Howard E. Rhodes, Hongli Yang (Omnivision Technologies, Inc.)

10/03/13 - 20130258144 - System, apparatus and method for dark current correction
Embodiments of the invention describe a system, apparatus and method for obtaining black reference pixels for dark current correction processing are described herein. Embodiments of the invention capture image signal data via a plurality of pixel cells of a pixel unit of an image device, wherein capturing image signal data...
Inventors: Gang Chen, Duli Mao, Hsin-chih Tai, Howard E. Rhodes (Omnivision Technologies, Inc.)

10/03/13 - 20130256822 - Method and device with enhanced ion doping
Techniques for providing a pixel cell which exhibits improved doping in a semiconductor substrate. In an embodiment, a first doping is performed through a backside of the semiconductor substrate. After the first doping, the semiconductor substrate is thinned to expose a front side which is opposite of the backside. In...
Inventors: Gang Chen, Duli Mao, Hsin-chih Tai, Howard Rhodes (Omnivision Technologies, Inc.)

08/22/13 - 20130217173 - Methods of forming varying depth trenches in semiconductor devices
A method of forming trenches in a semiconductor device includes forming an etchant barrier layer above a first portion of a semiconductor layer. A first trench is etched in a second portion of the semiconductor layer using a first etchant. The second portion of the semiconductor layer is not disposed...
Inventors: Gang Chen, Duli Mao, Hsin-chih Tai, Howard E. Rhodes (Omnivision Technologies, Inc.)

08/15/13 - 20130207212 - Lateral light shield in backside illuminated imaging sensors
A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer....
Inventors: Duli Mao, Hsin-chih Tai, Vincent Venezia, Yin Qian, Gang Chen, Howard E. Rhodes (Omnivision Technologies, Inc.)

08/08/13 - 20130200396 - Prevention of light leakage in backside illuminated imaging sensors
An apparatus includes a semiconductor layer, a dielectric layer, and a light prevention structure. The semiconductor layer has a front surface and a backside surface. The semiconductor layer includes a light sensing element and a periphery circuit region containing a light emitting element and not containing the light sensing element....
Inventors: Wei Zheng, Vincent Venezia, Hsin-chih Tai (Omnivision Technologies, Inc.)

05/16/13 - 20130122637 - Seal ring support for backside illuminated image sensor
A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in...
Inventors: Hsin-chih Tai, Vincent Venezia, Yin Qian, Duli Mao, Keh-chiang Ku (Omnivision Technologies, Inc.)

05/09/13 - 20130113065 - Pad design for circuit under pad in semiconductor devices
Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first...
Inventors: Yin Qian, Hsin-chih Tai, Keh-chiang Ku, Vincent Venezia, Duli Mao, Wei Zheng, Howard E. Rhodes (Omnivision Technologies, Inc.)

04/18/13 - 20130092982 - Partial buried channel transfer device for image sensors
Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the...
Inventors: Gang Chen, Sing-chung Hu, Hsin-chih Tai, Duli Mao, Manoj Bikumandla, Wei Zheng, Yin Qian, Zhibin Xiong, Vincent Venezia, Keh-chiang Ku, Howard E. Rhodes (Omnivision Technologies, Inc.)

04/04/13 - 20130083224 - Image sensor with dual element color filter array and three channel color output
A color image sensor includes a pixel array including a CFA overlaying an array of photo-sensors for acquiring a color image. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors, second color filter elements of a second color overlaying a second...
Inventors: Hsin-chih Tai, Yin Qian, Duli Mao, Vincent Venezia (Omnivision Technologies, Inc.)

04/04/13 - 20130083223 - Image sensor with dual element color filter array and three channel color output
A color image sensor includes a pixel array including CFA overlaying an array of photo-sensors for acquiring color image data. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors and second color filter elements of a second color overlaying a second...
Inventors: Hsin-chih Tai, Yin Qian, Duli Mao, Vincent Venezia (Omnivision Technologies, Inc.)

04/04/13 - 20130082163 - Image sensor with micro-lens coating
Techniques and architectures for providing a coating for one or more micro-lenses of a pixel array. In an embodiment, a pixel element includes a micro-lens and a coating portion extending over a surface of the micro-lens, where a profile of the coating portion is super-conformal to, or at least conformal...
Inventors: Gang Chen, Hsin-chih Tai, Duli Mao, Howard E. Rhodes (Omnivision Technologies, Inc.)

03/21/13 - 20130069188 - Dual-facing camera assembly
In some embodiments of the invention, a system having an array of frontside illuminated (FSI) imaging pixels is bonded to a system having an array of backside illuminated (BSI) imaging pixels, creating a camera assembly with a minimal size (e.g., a reduced thickness compared to prior art solutions). An FSI...
Inventors: Gang Chen, Ashish Shah, Duli Mao, Hsin-chih Tai, Howard E. Rhodes (Omnivision Technologies, Inc.)

03/14/13 - 20130063641 - Dual-sided image sensor
An apparatus for a dual-sided image sensor is described. The dual-sided image sensor captures frontside image data incident upon a frontside of the dual-sided image sensor within an array of photosensitive regions integrated into a semiconductor layer of the dual-sided image sensor. Backside image data incident upon a backside of...
Inventors: Vincent Venezia, Duli Mao, Hsin-chih Tai (Omnivision Technologies, Inc.)

03/07/13 - 20130056808 - Isolation area between semiconductor devices having additional active area
An isolation area that provides additional active area between semiconductor devices on an integrated circuit is described. In one embodiment, the invention includes a complementary metal oxide semiconductor transistor of an image sensor having a source, a drain, and a gate between the source and the drain, the transistor having...
Inventors: Hsin-chih Tai, Keh-chiang Ku, Duli Mao, Vincent Venezia, Gang Chen

02/07/13 - 20130033629 - Image sensor with improved black level calibration
An imaging system capable of black level calibration includes an imaging pixel array, at least one black reference pixel, and peripheral circuitry. The imaging pixel array includes a plurality of active pixels each coupled to capture image data. The black reference pixel is coupled to generate a black reference signal...
Inventors: Wei Zheng, Hsin-chih Tai, Yin Qian, Hongjun Li, Howard E. Rhodes (Omnivision Technologies, Inc.)

02/07/13 - 20130033627 - Color filter patterning using hard mask
Embodiments are disclosed of an apparatus comprising a color filter arrangement including a set of color filters. The set of color filters includes a pair of first color filters, each having first and second hard mask layers formed thereon, a second color filter having the first hard mask layer formed...
Inventors: Gang Chen, Duli Mao, Hsin-chih Tai, Howard E. Rhodes (Omnivision Technologies, Inc.)

02/07/13 - 20130032921 - Backside illuminated image sensor with stressed film
An image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident through a first side of the image sensor to collect an image charge. The stress adjusting layer is disposed over the first side of the...
Inventors: Hsin-chih Tai, Howard E. Rhodes, Wei Zheng, Vincent Venezia, Yin Qian, Duli Mao (Omnivision Technologies, Inc.)

12/13/12 - 20120313197 - In-pixel high dynamic range imaging
Each of the MOS capacitance regions will have different threshold voltages, thereby turning “on” at different illumination conditions. This increases the dynamic range of the imaging pixel, thereby providing HDR for the host imaging system....


11/29/12 - 20120302000 - Laser anneal for image sensors
A technique for fabricating an image sensor including a pixel circuitry region and a peripheral circuitry region includes fabricating front side components on a front side of the image sensor. A dopant layer is implanted on a backside of the image sensor. A anti-reflection layer is formed on the backside...


11/08/12 - 20120282728 - Backside illuminated imaging sensor with reinforced pad structure
A method of fabricating a backside illuminated imaging sensor that includes a device layer, a metal stack, and an opening is disclosed. The device layer has an imaging array formed in a front side of the device layer, where the imaging array is adapted to receive light from a back...


11/08/12 - 20120280109 - Method, apparatus and system to provide conductivity for a substrate of an image sensing pixel
Techniques for promoting conductivity in a substrate for a pixel array. In an embodiment, an isolation region and a dopant well are disposed within an epitaxial layer adjoining the substrate, where a portion of the dopant well is between the substrate and a portion of the isolation well. In another...


10/18/12 - 20120261730 - Floating diffusion structure for an image sensor
An image sensor including a pixel array having a floating diffusion region of a pixel which is disposed in a substrate, the floating diffusion region to receive a charge from a photosensitive region. In an embodiment, a transfer gate disposed on the substrate, wherein a portion of the transfer gate...


10/04/12 - 20120249845 - Image sensor with improved black level calibration
An imaging system capable of black level calibration includes an imaging pixel array, at least one black reference pixel, and peripheral circuitry. The imaging pixel array includes a plurality of active pixels each coupled to capture image data. The black reference pixel is coupled to generate a black reference signal...


09/20/12 - 20120235212 - Backside-illuminated (bsi) image sensor with reduced blooming and electrical shutter
Embodiments of a pixel including a photosensitive region formed in a surface of a substrate and an overflow drain formed in the surface of the substrate at a distance from the photosensitive area, an electrical bias of the overflow drain being variable and controllable. Embodiments of a pixel including a...


07/12/12 - 20120175722 - Seal ring support for backside illuminated image sensor
A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in...


06/21/12 - 20120153123 - Image sensor having supplemental capacitive coupling node
An image sensor includes a pixel array, a bit line, supplemental capacitance node line, and a supplemental capacitance circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The...


05/03/12 - 20120104525 - Image sensor with color pixels having uniform light absorption depths
An example image sensor includes first, second, and third micro-lenses. The first micro-lens is in a first color pixel and has a first curvature and a first height. The second micro-lens is in a second color pixel and has a second curvature and a second height. The third micro-lens is...


04/12/12 - 20120086844 - Circuit and photo sensor overlap for backside illumination image sensor
A method of operation of a backside illuminated (BSI) pixel array includes acquiring an image signal with a first photosensitive region of a first pixel within the BSI pixel array. The image signal is generated in response to light incident upon a backside of the first pixel. The image signal...


04/05/12 - 20120080765 - Method of damage-free impurity doping for cmos image sensors
A method of fabricating a backside-illuminated pixel. The method includes forming frontside components of the pixel on or in a front side of a substrate, the frontside components including a photosensitive region of a first polarity. The method further includes forming a pure dopant region of a second polarity on...


02/16/12 - 20120038014 - Backside illuminated image sensor with stressed film
A backside illuminated (“BSI”) complementary metal-oxide semiconductor (“CMOS”) image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge. The stress adjusting layer...


01/26/12 - 20120019696 - Image sensor with dual element color filter array and three channel color output
A color image sensor is disclosed. The color image sensor includes a pixel array including a color filter array (“CFA”) overlaying an array of photo-sensors for acquiring a color image. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors and second...


01/26/12 - 20120019695 - Image sensor having dark sidewalls between color filters to reduce optical crosstalk
An apparatus and technique for fabricating an image sensor including the dark sidewall films disposed between adjacent color filters. The image sensor further includes an array of photosensitive elements disposed in a substrate layer, a color filter array (“CFA”) including CFA elements having at least two different colors disposed on...


01/26/12 - 20120018620 - Backside illuminated imaging sensor with vertical pixel sensor
A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light...


01/19/12 - 20120013777 - Cmos image sensor with improved photodiode area allocation
Embodiments of an apparatus comprising a pixel array comprising a plurality of macropixels. Each macropixel includes a pair of first pixels each including a color filter for a first color, the first color being one to which pixels are most sensitive, a second pixel including a color filter for a...


10/27/11 - 20110260221 - Laser anneal for image sensors
A technique for fabricating an image sensor including a pixel circuitry region and a peripheral circuitry region includes fabricating front side components on a front side of the image sensor. A dopant layer is implanted on a backside of the image sensor. A anti-reflection layer is formed on the backside...


10/06/11 - 20110241090 - High full-well capacity pixel with graded photodetector implant
Embodiments of a process for forming a photodetector region in a CMOS pixel by dopant implantation, the process comprising masking a photodetector area of a surface of a substrate for formation of the photodetector region, positioning the substrate at a plurality of twist angles, and at each of the plurality...


08/18/11 - 20110199518 - Image sensor with improved black level calibration
An imaging system capable of black level calibration includes an imaging pixel array, at least one black reference pixel, and peripheral circuitry. The imaging pixel array includes a plurality of active pixels each coupled to capture image data. The black reference pixel is coupled to generate a black reference signal...


07/21/11 - 20110177650 - Cmos image sensor with self-aligned photodiode implants
An example method of forming a pinned photodiode includes applying a photoresist mask to a semiconductor layer at a location where a transfer gate will subsequently be formed. First dopant ions are then implanted at a first angle to form a first dopant region under an edge of the photoresist...


07/14/11 - 20110169991 - Image sensor with epitaxially self-aligned photo sensors
An image sensor pixel includes a substrate doped to have a first conductivity type. A first epitaxial layer is disposed over the substrate and doped to also have the first conductivity type. A transfer transistor gate is formed on the first epitaxial layer. An epitaxially grown photo-sensor region is disposed...


06/16/11 - 20110140221 - Image sensor having curved micro-mirrors over the sensing photodiode and method for fabricating
The invention involves the integration of curved micro-mirrors over a photodiode active area (collection area) in a CMOS image sensor (CIS) process. The curved micro-mirrors reflect light that has passed through the collection area back into the photo diode. The curved micro-mirrors are best implemented in a backside illuminated device...


05/19/11 - 20110115002 - Backside illuminated imaging sensor with reinforced pad structure
A backside illuminated imaging sensor with reinforced pad structure includes a device layer, a metal stack, an opening and a frame. The device layer has an imaging array formed in a front side of the device layer and the imaging array is adapted to receive light from a back side...


04/21/11 - 20110089517 - Cmos image sensor with heat management structures
An image sensor includes a device wafer substrate of a device wafer, a device layer of the device wafer, and optionally a heat control structure and/or a heat sink. The device layer is disposed on a frontside of the device wafer substrate and includes a plurality of photosensitive elements disposed...


04/21/11 - 20110089311 - Trench transfer gate for increased pixel fill factor
An image sensor provides high scalability and reduced image lag. The sensor includes a first imaging pixel that has a first photodiode region formed in a substrate of the image sensor. The sensor also includes a first vertical transfer transistor coupled to the first photodiode region. The first vertical transfer...


04/14/11 - 20110085067 - Multilayer image sensor pixel structure for reducing crosstalk
An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type...


03/24/11 - 20110068429 - Image sensor with contact dummy pixels
An image sensor array includes a substrate layer, a metal layer, an epitaxial layer, a plurality of imaging pixels, and a contact dummy pixel. The metal layer is disposed above the substrate layer. The epitaxial layer is disposed between the substrate layer and the metal layer. The imaging pixels are...


12/23/10 - 20100323470 - Backside illuminated image sensor having deep light reflective trenches
An array of pixels is formed using a semiconductor layer having a frontside and a backside through which incident light is received. Each pixel typically includes a photosensitive region formed in the semiconductor layer and a trench formed adjacent to the photosensitive region. The trench causes the incident light to...


02/18/10 - 20100038523 - Image sensor with buried self aligned focusing element
An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and an embedded layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the front side of the semiconductor substrate above the optical sensor region....


Omnivision Technologies, Inc.

Archived*
(*May have duplicates - we are upgrading our archive.)

20130009043 - Image sensor having supplemental capacitive coupling node


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The bibliographic references displayed about Hsin-Chih Tai's patents are for a recent sample of Hsin-Chih Tai's publicly published patent applications. The inventor/author may have additional bibliographic citations listed at the USPTO.gov. FreshPatents.com is not associated or affiliated in any way with the author/inventor or the United States Patent/Trademark Office but is providing this non-comprehensive sample listing for educational and research purposes using public bibliographic data published and disseminated from the United States Patent/Trademark Office public datafeed. This information is also available for free on the USPTO.gov website. If Hsin-Chih Tai filed recent patent applications under another name, spelling or location then those applications could be listed on an alternate page. If no bibliographic references are listed here, it is possible there are no recent filings or there is a technical issue with the listing--in that case, we recommend doing a search on the USPTO.gov website.

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