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  High power semiconductor device to output light with low-absorbtive facet windowRelated Patent Categories: Coherent Light Generators, Particular Active Media, Semiconductor, Injection, Particular Coating On FacetHigh power semiconductor device to output light with low-absorbtive facet window description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20070153857, High power semiconductor device to output light with low-absorbtive facet window. Brief Patent Description - Full Patent Description - Patent Application Claims
CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is related to U.S. patent application Ser. No. ______ (attorney docket number 20020649Q-US-NP) entitled "Buried Lateral Index Guided Lasers and Lasers with Lateral Current Blocking Lasers", and U.S. patent application Ser. No. ______ (attorney docket number 20020649Q1-US-NP) entitled "A system for adjusting the wavelength light output of a Semiconductor Device using hydrogenation", and U.S. patent application Ser. No. ______ (attorney docket number 20020649Q2-US-NP) entitled "On-Chip Integration of Passive and Active Optical Components Enabled by Hydrogenation", all assigned to the same assignee and filed on the same day on Dec. ______, 2005, and all are hereby incorporated by reference. BACKGROUND [0002] GaAsN material systems have become important due to its bandgap that enables long wavelength (1.3 to 1.6 micrometer) light sources to be made on GaAs substrates. This capability has for example, led to the development of a new generation of long wavelength VCSELs utilizing GaAs-based distributed Bragg reflecting mirrors. The large bandgap offsets in InGaAsN material systems result in high laser characteristic temperatures TO. The reduced temperature sensitivity makes InGaAsN attractive for high power lasers. [0003] However, one problem with such high powered lasers is the facets of the laser absorbs energy from the laser. The absorbed energy heats the facet causing defects and bandgap shrinkage. The resulting defects and bandgap shrinkage increases facet energy absorption in cycle that sometimes results in catastrophic optical damage at the laser facet and laser failure. [0004] Thus an improved system to minimize facet heating is needed. SUMMARY [0005] A semiconductor structure to output light is described. The semiconductor structure includes an active layer that includes an active region. A facet coupled to one end of the active region allows light from the active region to pass through the laser facet before exiting the semiconductor structure. By introducing hydrogen into the facet the facet bandgap becomes larger than the active region bandgap such that absorption of light in the facet region is minimized. In an additional enhanced variation, a defined lateral hydrogen profile is used to generate a desired lateral index variation in the facet. In this embodiment, the lateral index variations improve the beam profile of the optical mode at the facet. BRIEF DESCRIPTION OF THE DRAWINGS [0006] FIG. 1 shows a graph plotting the output photoluminescence spectra of InGaAsN/GaAs quantum wells doped with various quantities of hydrogen. [0007] FIG. 2 shows a plot of the absorption characteristics of a semiconductor as a function of the incident photon energy. [0008] FIG. 3 shows a cross sectional view of a laser structure that relies on hydrogenated facets to minimize absorption. [0009] FIG. 4 shows a mask with apertures being used to control hydrogenation of a wafer. [0010] FIG. 5 shows a buried index guided laser diode structure using hydrogenated InGaAsN and GaAsN layers for lateral index guiding. [0011] FIG. 6 is a table showing different confinement factors and effective refractive indexes for various example structures. [0012] FIG. 7 is a plot of lateral confinement factors for a buried lateral index guided laser structure versus waveguide width for different refractive index steps. [0013] FIG. 8 shows an example of a ridge-waveguide laser diode. [0014] FIG. 9 is a schematic that shows different contributions to the net optical gain of a laser as a function of wavelength. [0015] FIG. 10 shows an array of lasers coupled to gratings, each laser outputs a different frequency of light, all lasers may be on the same wafer. [0016] FIG. 11 shows a wafer in a vacuum chamber as one method of selectively hydrogenating regions of a wafer. [0017] FIG. 12 shows a half tone mask using different aperture densities to control hydrogenation of a wafer. [0018] FIG. 13 shows a VCSEL where the hydrogen content of the active region may be adjusted to tune the frequency of the laser output. [0019] FIG. 14 shows a cross sectional view of an index guided optical waveguide where a half tone mask is used to create a desired lateral index variation. [0020] FIG. 15A is a side cross sectional view of the integration of an optical waveguide with a laser diode. A half tone mask is used in this case to gradually modify the lateral and vertical index profile. FIG. 15B shows the index profile at two sample locations in the structure of FIG. 15A. Continue reading about High power semiconductor device to output light with low-absorbtive facet window... Full patent description for High power semiconductor device to output light with low-absorbtive facet window Brief Patent Description - Full Patent Description - Patent Application Claims Click on the above for other options relating to this High power semiconductor device to output light with low-absorbtive facet window patent application. ###  How KEYWORD MONITOR works... a FREE service from FreshPatents1. Sign up (takes 30 seconds). 2. Fill in the keywords to be monitored. 3. Each week you receive an email with patent applications related to your keywords. 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