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High order silane composition, and method of forming silicon film using the compositionRelated Patent Categories: Coating Processes, Direct Application Of Electrical, Magnetic, Wave, Or Particulate Energy, Pretreatment Of Coating Supply Or Source Outside Of Primary Deposition Zone Or Off Site, Silicon Containing Coating Supply Or SourceHigh order silane composition, and method of forming silicon film using the composition description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20070190265, High order silane composition, and method of forming silicon film using the composition. Brief Patent Description - Full Patent Description - Patent Application Claims
[0001] This application is a divisional patent application of U.S. Ser. No. 10/420,521, filed Apr. 22, 2003 and claims priority to Japanese Application No. 2002-119961 filed Apr. 22, 2002, all of which are incorporated by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a high order silane composition and a method of forming a silicon film that can be used in particular with integrated circuits, thin film transistors, photoelectric converters, photoreceptors, and soon. Specifically, the present invention relates to a high order silane composition that in particular enables a high-quality silicon film to be formed easily, and a method of forming an excellent silicon film using the composition. [0004] 2. Description of the Related Art [0005] Patterning of silicon thin films (amorphous silicon films, polysilicon films, etc.) used with integrated circuits, thin film transistors, and so on is generally carried out through a process in which a silicon film is formed over the whole surface by a vacuum process such as CVD (chemical vapor deposition), and then unwanted parts are removed by photolithography. However, with this method, there are problems such as a large apparatus being required, the efficiency of usage of the raw material being poor, the raw material being difficult to handle due to being a gas, and a large amount of waste being generated. [0006] Japanese Patent Application Laid-open No. 1-29661 discloses a method in which a gaseous raw material is liquefied and attached on a cooled substrate, and is then reacted with chemically active atomic hydrogen, thus forming a silicon-based thin film. However, there is a problem in that the raw material silane is continuously vaporized and cooled, and hence a complicated apparatus is required, and moreover it is difficult to control the film thickness. [0007] Moreover, Japanese Patent Application Laid-open No. 5-144741 and Japanese Patent Application Laid-open No. 7-267621 disclose methods in which a liquid silane is applied onto a substrate, and then a silicon film is produced through heating or UV irradiation. However, with these methods, a low-molecular-weight material is used, and hence the system is unstable and handling is problematic. Moreover, with these methods, the wettability to the substrate of the solution used is poor, and hence the application onto the substrate is intrinsically difficult, and moreover the boiling point is low due to the molecular weight being low, and hence during the heating evaporation occurs more quickly than formation of the silicon film, and thus it is extremely difficult to obtain the desired film. That is, how high the molecular weight is (i.e. how good the wettability is, how high the boiling point is, and how good the safety is) of the polysilane (high order silane) used as a material is an important point with regard to film formation. [0008] As a method of resolving the above problem, Japanese Patent Application Laid-open No. 10-321536 suggests a method in which the wettability of a solution of a polysilane is improved by subjecting a mixture of the solution and a catalyst to thermal decomposition or photo decomposition as treatment before the application. With this method, it is necessary to mix a catalyst such as nickel into the solution, and hence there is a drawback that the properties of the silicon film are markedly degraded. [0009] Regarding methods of directly synthesizing silane having a high molecular weight, synthesis procedures and refinement methods are both extremely problematic in general; there have been attempts at a method of directly synthesizing polysilane through thermal polymerization as disclosed in Japanese Patent Application Laid-open No. 11-260729, but at best Si.sub.9H.sub.20 is obtained and at a low yield, and at such a molecular size, the above-mentioned properties such as wettability are still insufficient. [0010] Moving on, as a method of forming a silicon film containing an n-type or p-type dopant, in general the silicon film is first produced, and then the dopant is introduced therein by ion implantation. In contrast to this, Japanese Patent Application Laid-open No. 2000-31066 discloses a method in which, during a process of forming a silicon film from a polysilane solution as described above, a dopant source is mixed into the material liquid, whereby a doped silicon film is formed. However, with this method as well, there is the fundamental problem for the case of using a low-molecular-weight material that the polysilane solution evaporates during the heating process and hence the amount thereof drops, and accompanying this the dopant source also evaporates, and hence it is difficult to add the dopant effectively. SUMMARY OF THE INVENTION [0011] In view of the above, it is an object of the present invention to provide a high order silane composition that contains a polysilane having a higher molecular weight than conventionally, this being from the viewpoints of wettability when applying onto a substrate, boiling point and safety, and hence in particular enables a high-quality silicon film to be formed easily, and also a method of forming an excellent silicon film using the composition. [0012] The present inventors carried out assiduous research, and as a result discovered that the above object can be attained through a composition containing a polysilane formed through a specific polymerization process using a solution of a silane having a cyclic silicon chain such as cyclopentasilane (Si.sub.5H.sub.10) as a silane having specific properties. [0013] The present invention was accomplished based on the above discovery, and attains the above object by providing a high order silane composition containing a polysilane obtained through photopolymerization by irradiating a solution of a photopolymerizable silane with ultraviolet light. [0014] Moreover, the present invention also provides a high order silane composition containing a polysilane obtained through photopolymerization by irradiating a photopolymerizable like-liquid silane with ultraviolet light. [0015] Preferably, the boiling point of the polysilane at normal pressure is higher than the decomposition point thereof. [0016] Moreover, preferably, the high order silane composition contains a solvent, wherein the boiling point of the solvent is lower than the decomposition point of the polysilane. [0017] Moreover, preferably, the ultraviolet light has a wavelength such as not to decompose the solvent used in the solution of the photopolymerizable silane. [0018] Particularly preferably, the ultraviolet light has a wavelength of at least 250 nm. [0019] Moreover, preferably, the irradiation time of the ultraviolet light is in a range of 0.1 seconds to 120 minutes. [0020] Moreover, preferably, the photopolymerizable silane has at least one cyclic structure in the molecule thereof. [0021] Particularly preferably, the photopolymerizable silane is one represented by the general formula Si.sub.nX.sub.2n, wherein each X independently represents a hydrogen atom or a halogen atom, and n is an integer greater than or equal to 3. [0022] Moreover, preferably, the high order silane composition further has a substance containing a group 3B element of the periodic table or a substance containing a group 5B element of the periodic table added thereto after irradiating with the ultraviolet light. Continue reading about High order silane composition, and method of forming silicon film using the composition... 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