| Heat transfer assembly -> Monitor Keywords |
|
|
  Heat transfer assemblyUSPTO Application #: 20070079761Title: Heat transfer assembly Abstract: A heat transfer assembly having a heat spreading member sandwiched between a heat source and a heat sink is disclosed. The heat sink, the heat spreading member, and the heat source are pressed against the bottom of a substrate support plate by a bias member. (end of abstract)
Agent: MoserIPLaw Group / Applied Materials, Inc. - Shrewsbury, NJ, US Inventors: Boris S. Yendler, Alexander Matyushkin USPTO Applicaton #: 20070079761 - Class: 118728000 (USPTO) Related Patent Categories: Coating Apparatus, Gas Or Vapor Deposition, Work Support The Patent Description & Claims data below is from USPTO Patent Application 20070079761. Brief Patent Description - Full Patent Description - Patent Application Claims
CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is a continuation of co-pending U.S. patent application Ser. No. 10/440,365, filed May 16, 2003, which is herein incorporated by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention generally relates to semiconductor substrate processing systems. More specifically, the invention relates to an apparatus for supporting a substrate in a semiconductor substrate processing system. [0004] 2. Description of the Related Art [0005] Accurate reproducibility of substrate processing is an important factor when increasing productivity for integrated circuit fabrication processes. Precise control of various process parameters is required for achieving consistent results across a substrate, as well as results that are reproducible from substrate to substrate. More particularly, uniformity of the substrate temperature during processing is one requirement for achieving accurate reproducibility. During substrate processing, changes in the temperature and temperature gradients across the substrate are detrimental to material deposition, etch rate, step coverage, feature taper angles, and the like. [0006] Generally, during processing, the substrate is disposed on a substrate support (e.g., electrostatic chuck, susceptor, and the like) that is thermally coupled to a heat source, such as an embedded heater, e.g., a resistive heater and the like. Additionally, in some applications, heat is also produced by the process itself (e.g., plasma process). To enhance the processing and minimize undesirable yield losses, it is essential to control the temperature as well as the temperature uniformity of the substrate. [0007] Therefore, there is a need in the art for a substrate support having means to control the temperature as well as the temperature uniformity of the substrate. SUMMARY OF THE INVENTION [0008] The disadvantages associated with the prior art are overcome by an improved substrate support for a semiconductor substrate processing system. The substrate support comprises a heat transfer assembly having a heat spreader member that is sandwiched between a heat source and a heat sink. The heat sink, heat spreader member, and heat source are pressed against the bottom of a substrate support plate by a bias member. BRIEF DESCRIPTION OF THE DRAWINGS [0009] The teachings of the present invention can be readily understood by considering the following detailed description in conjunction with the accompanying drawings, in which: [0010] FIG. 1 depicts a schematic diagram of an exemplary processing reactor comprising a substrate support in accordance with one embodiment of the present invention; [0011] FIG. 2 is a schematic, cross-sectional view of a heat transfer assembly of the substrate support of FIG. 1 in accordance with one embodiment of the present invention; and [0012] FIG. 3 is a schematic, top plan view of the heat transfer assembly of FIG. 2. [0013] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. [0014] It is to be noted, however, that the appended drawings illustrate only exemplary embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments. DETAILED DESCRIPTION [0015] The present invention is a heat transfer assembly for controlling the temperature and temperature uniformity of a substrate support in a substrate processing system. The substrate support is generally used to support a substrate (e.g., silicon (Si) wafer) in a process chamber of the substrate processing system, such as a plasma etching reactor, a reactive ion etching (RIE) reactor, a chemical vapor deposition (CVD) reactor, a plasma enhanced CVD (PECVD) reactor, a physical vapor deposition (PVD) reactor, an electron cyclotron resonance (ECR) reactor, a rapid thermal processing (RTP) reactor, an ion implantation system, and the like. The invention is useful in applications that require a substrate to be supported in a chamber while the temperature of the substrate is required to be substantially uniform. [0016] FIG. 1 depicts a schematic diagram of an exemplary Decoupled Plasma Source (DPS II) etch reactor 100 that may be used to practice the invention. The DPS II reactor is commercially available from Applied Materials, Inc. of Santa Clara, Calif. The particular embodiment of the reactor 100 shown herein is provided for illustrative purposes and should not be used to limit the scope of the invention. For example, the invention can be used in apparatus other than a system for processing substrates, whether fabricated of semiconductor materials or other materials. [0017] The reactor 100 comprises a process chamber 110 and a controller 140. [0018] The process chamber 110 generally comprises a conductive body (wall) 130 having a substantially flat dielectric ceiling 120 and encompassing a substrate support 116. The process chamber 110 may have other types of ceilings, e.g., a dome-shaped ceiling. The wall 130 typically is coupled to an electrical ground terminal 134. [0019] Above the ceiling 120 is disposed an antenna comprising at least one inductive coil element 112 (two co-axial elements 112 are shown). The inductive coil element 112 is coupled, through a first matching network 119, to a plasma power source 118. The plasma power source 118 generally is capable of producing up to 5000 W at a tunable frequency in a range from about 50 kHz to 13.6 MHz. The matching network 119 and the plasma power source 118 are controlled by the controller 140. Continue reading... Full patent description for Heat transfer assembly Brief Patent Description - Full Patent Description - Patent Application Claims Click on the above for other options relating to this Heat transfer assembly patent application. ###  How KEYWORD MONITOR works... a FREE service from FreshPatents1. Sign up (takes 30 seconds). 2. Fill in the keywords to be monitored. 3. Each week you receive an email with patent applications related to your keywords. Start now! - Receive info on patent apps like Heat transfer assembly or other areas of interest. ### Previous Patent Application: Wide range pressure control using turbo pump Next Patent Application: Portable water drinking trough for pets Industry Class: Coating apparatus ### FreshPatents.com Support Thank you for viewing the Heat transfer assembly patent info. IP-related news and info Results in 2.28735 seconds Other interesting Feshpatents.com categories: Medical: Surgery , Surgery(2) , Surgery(3) , Drug , Drug(2) , Prosthesis , Dentistry |
||
