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  Gas supply device and apparatus for processing a substrateUSPTO Application #: 20070087296Title: Gas supply device and apparatus for processing a substrate Abstract: A gas supply device may include a first gas supply member that may be disposed in a chamber and around a substrate loaded in the chamber. The first gas supply member may include nozzles for providing a gas onto the substrate. A second gas supply member that may provide the gas supplied from at least one gas supply line to the first gas supply member. (end of abstract) Agent: Harness, Dickey & Pierce, P.L.C - Reston, VA, US Inventors: Woo-Seok Kim, Jae-Hyun Han, Joo-Pyo Hong, No-Hyun Huh USPTO Applicaton #: 20070087296 - Class: 431181000 (USPTO) Related Patent Categories: Combustion, Fuel Disperser Installed In Furnace, Plural Feed Means Extending To Common Wall Opening Of Furnace The Patent Description & Claims data below is from USPTO Patent Application 20070087296. Brief Patent Description - Full Patent Description - Patent Application Claims
PRIORITY STATEMENT [0001] This U.S. non-provisional application claims benefit of priority under 35 U.S.C. .sctn. 119 from Korean Patent Application No. 2005-97979 filed on Oct. 18, 2005 in the Korean Intellectual Property Office (KIPO), the entire contents of which are incorporated herein by reference. BACKGROUND [0002] 1. Field [0003] Example embodiments relate to a gas supply device and an apparatus for processing a substrate having the gas supply device, for example, a gas supply device for supplying a reaction gas onto a substrate. [0004] 2. Description of the Related Art [0005] A semiconductor manufacturing process may include a fabrication process, an electrical die sorting (EDS) process and/or a packaging process. Integrated circuits including various elements may be formed on a silicon wafer in the fabrication process. Electrical characteristics of the integrated circuits may be inspected in the EDS process. The integrated circuits may be sealed and separated individually in the packaging process. [0006] The fabrication process may include a deposition process, a planarization process, a photolithography process, an etching process, an ion implantation process, a cleaning process, and/or an inspecting process. A layer may be formed on a semiconductor substrate during the deposition process. The layer may be patterned to form a desired pattern on the substrate through the photolithography process and/or the etching process. In the ion implantation process, impurities may be doped into predetermined or desired portions of the substrate to form impurity regions. The cleaning process may remove products and particles from the desired pattern and the substrate. The desired pattern and the substrate may be evaluated in the inspecting process. [0007] A processing gas may be provided onto the substrate in the deposition process, for example, a chemical vapor deposition (CVD) process. An etching gas may be introduced onto the substrate in the etching process, for example, a dry etching process. The processing gas and/or the etching gas may be uniformly provided onto the substrate to ensure a deposition uniformity and/or an etch uniformity of the layer. The processing gas and/or etching gas may be introduced onto the substrate using a shower-head-type gas supply device and/or an injector-type gas supply device. [0008] Japanese Laid-Open Patent Publication No. 2000-263141 discloses a substrate processing apparatus that may include an injector-type gas supply device. The injector-type gas supply device may provide a processing gas from a peripheral portion of a substrate to a central portion of the substrate. [0009] FIG. 1 is a cross-sectional view of a conventional gas supply device. [0010] Referring to FIG. 1, a conventional injector-type gas supply device 20 may include a gas member 22 and a plurality of nozzles 24. The gas member 22 may be provided along a sidewall of the chamber 10 where a substrate (not shown) may be processed. The gas member 22 may be coupled to a gas supply line (not shown) for introducing a processing gas into the chamber 10. The nozzles 24 may be connected to the gas member 22 so that the processing gas may be sprayed through the nozzles 24 onto a substrate that may be loaded in the chamber 10. [0011] The gas supply device 20 may include one gas supply line connected to the gas member 22. The processing gas that may pass through the gas supply line and the gas member 22 may be sprayed through the nozzles 24 onto the substrate in the chamber 10. [0012] However, the processing gas may not be uniformly sprayed from the nozzles 24 onto the substrate. For example, the gas supply line may be coupled to only one side of the gas member 22. The amount of the processing gas that may be sprayed from one nozzle 24 adjacent to the gas supply line may be different from the amount of the processing gas sprayed from the other nozzles 24 that may be located a distance away from the gas supply line. If the amount of the processing gas sprayed from the nozzles 24 are different from one another, a uniformity of a layer that may be formed on the substrate may be deteriorated. Additionally, if an etching gas is provided from the nozzles 24, a pattern that may be formed on the substrate by etching the layer may have a poor uniformity. For example, this problem may become more serious if a semiconductor device has a minute design rule and/or if a semiconductor substrate has an increased size. SUMMARY [0013] Example embodiments may provide a gas supply device for more uniformly providing a gas onto a substrate. [0014] Example embodiments may provide a substrate processing apparatus that may include a gas supply device capable of more uniformly providing a gas onto a substrate. [0015] In an example, non-limiting embodiment, a first gas supply member may be disposed in a chamber and around a substrate loaded in the chamber. The first gas supply member may include nozzles for providing a gas onto the substrate. A second gas supply member may be connected to the first gas supply member. The second gas supply member may provide the gas supplied from at least one gas supply line to the first gas supply member. [0016] According to an example, non-limiting embodiment, the second gas supply member may be disposed within the first gas supply member, and the second gas supply member may have a plurality of openings to connect an inner cavity of the second gas supply member to an inner cavity of the first gas supply member. The plurality of openings and the at least one gas supply line may be alternately disposed, and the plurality of openings and the plurality of nozzles may be alternately disposed. The number of the openings may be greater than the number of the gas supply lines. [0017] According to an example, non-limiting embodiment, the first gas supply member may be disposed within and may make contact with the second gas supply member. The second gas supply member may have a plurality of openings between the first gas supply member and the second gas supply member to connect an inner cavity of the first gas supply member to an inner cavity of the second gas supply member. The plurality of openings and the at least one gas supply line may be alternately disposed, and the plurality of openings and the plurality of nozzles may be alternately disposed. The number of the openings may be greater than the number of the gas supply lines. [0018] According to an example, non-limiting embodiment, the first gas supply member may be disposed on the second gas supply member. A plurality of openings may be formed in the contact portion where the first gas supply member and the second gas supply member make contact, and may connect an inner cavity of the second gas supply member to an inner cavity of the first gas supply member. The plurality of openings and the at least one gas supply line may be alternately disposed, and the plurality of openings and the plurality of nozzles may be alternately disposed. The number of the openings may be greater than the number of the gas supply lines. [0019] According to an example, non-limiting embodiment, the first gas supply member may be spaced apart from the second gas supply member. The gas supply device may include a plurality of connection lines for connecting an inner cavity of the first gas supply member to an inner cavity of the second gas supply member. The plurality of connection lines and the at least one gas supply line may be alternately disposed, and the connection lines and the plurality of nozzles may be alternately disposed. The number of the connection lines may be greater than the number of the gas supply lines. [0020] According to an example, non-limiting embodiment, the first gas supply member and the second gas supply member may each be connected to a different gas reservoir. [0021] According to an example, non-limiting embodiment, the gas supply device may further include a sealing member for sealing connections between the at least one gas supply line and the second gas supply member. Continue reading... Full patent description for Gas supply device and apparatus for processing a substrate Brief Patent Description - Full Patent Description - Patent Application Claims Click on the above for other options relating to this Gas supply device and apparatus for processing a substrate patent application. ###  How KEYWORD MONITOR works... a FREE service from FreshPatents1. Sign up (takes 30 seconds). 2. Fill in the keywords to be monitored. 3. Each week you receive an email with patent applications related to your keywords. Start now! - Receive info on patent apps like Gas supply device and apparatus for processing a substrate or other areas of interest. ### Previous Patent Application: Radiographic materials with antifoggant precursors Next Patent Application: Liquid fuel backpacking stove Industry Class: Combustion ### FreshPatents.com Support Thank you for viewing the Gas supply device and apparatus for processing a substrate patent info. 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