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07/14/05 - USPTO Class 257 |  79 views | #20050151256 | Prev - Next | About this Page  257 rss/xml feed  monitor keywords

Freestanding multilayer ic wiring structure

USPTO Application #: 20050151256
Title: Freestanding multilayer ic wiring structure
Abstract: A dielectric wiring structure and method of manufacture therefor. The wiring structure includes air dielectric formed in a hemisphere. The wiring structure also includes, in embodiments, a method of simultaneously forming a MEMS structure with a transistor circuit using substantially the same steps. The MEMS structure of this embodiment includes freestanding electrodes which are not fixed to the substrate.
(end of abstract)
Agent: C. Lamont Whitham Whitham, Curtis & Whitham - Reston, VA, US
Inventor: Wesley C. Natzle
USPTO Applicaton #: 20050151256 - Class: 257750000 (USPTO)

Related Patent Categories: Active Solid-state Devices (e.g., Transistors, Solid-state Diodes), Combined With Electrical Contact Or Lead, Of Specified Material Other Than Unalloyed Aluminum, Layered

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Previous Patent Application:
Semiconductor device
Next Patent Application:
Semiconductor device and method of manufacturing the same
Industry Class:
Active solid-state devices (e.g., transistors, solid-state diodes)

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