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Ferroelectric memory devices

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Title: Ferroelectric memory devices.
Abstract: Forming a ferroelectric memory device can include forming an insulating layer on a substrate, forming a sacrificial layer on the first insulating layer so that the insulating layer is between the sacrificial layer and the substrate, and forming a contact hole extending through the sacrificial layer and the insulating layer. A conductive contact plug can be formed in the contact hole. After forming the conductive contact plug in the contact hole, the sacrificial layer can be removed so that the conductive contact plug extends beyond the insulating layer, and so that sidewalls of the conductive contact plug extending beyond the insulating layer are exposed. A first electrode can be formed on exposed portions of the conductive contact plug, a ferroelectric layer can be formed on the first electrode, and a second electrode can be formed on the ferroelectric layer such that the ferroelectric layer is between the first and second electrodes. Related structures are also discussed. ...


- Raleigh, NC, US
Inventor: Moon-Sook Lee
USPTO Applicaton #: #20060183252 - Class: 438003000 (USPTO) - 08/17/06 - Class 438 


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Related Patent Categories: Semiconductor Device Manufacturing: Process, Having Magnetic Or Ferroelectric Component
The Patent Description & Claims data below is from USPTO Patent Application 20060183252, Ferroelectric memory devices.

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stats Patent Info
Application #
US 20060183252 A1
Publish Date
08/17/2006
Document #
File Date
07/31/2014
USPTO Class
Other USPTO Classes
International Class
/
Drawings
0



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