| Ethyleneoxide-silane and bridged silane precursors for forming low k films -> Monitor Keywords |
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Ethyleneoxide-silane and bridged silane precursors for forming low k filmsRelated Patent Categories: Semiconductor Device Manufacturing: Process, Coating With Electrically Or Thermally Conductive MaterialEthyleneoxide-silane and bridged silane precursors for forming low k films description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20060134897, Ethyleneoxide-silane and bridged silane precursors for forming low k films. Brief Patent Description - Full Patent Description - Patent Application Claims
CROSS-REFERENCE TO RELATED APPLICATION [0001] This is a divisional application of U.S. patent application Ser. No. 10/619,785 filed in the name of Alexander S. Borovik on Jul. 15, 2003 and entitled "ETHYLENEOXIDE-SILANE AND BRIDGED SILANE PRECURSORS FOR FORMING LOW K FILMS," the disclosure of which is hereby incorporated herein by reference, for all purposes. Priority of said U.S. patent application Ser. No. 10/619,785 is claimed, under the provisions of 35 USC 120. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to low dielectric constant films, and to precursors and methods useful in making such films. [0004] 2. Description of the Related Art [0005] As semiconductor devices are scaled to higher processor speeds and smaller, denser structures, there is an increasing need to reduce resistance-capacitance (RC) delays present in interconnect wiring. Since the dielectric constant k is proportional to capacitance (C), scaling relationships require reductions in k values of the dielectric material. In addition to the requirement of low k values, reliability issues require that the dielectric material have a high degree of mechanical strength. Currently available dielectric films have low mechanical strength as k values decrease. [0006] Among the various materials that are currently available for forming low k films, 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) is a widely studied precursor for deposition of low k thin films used as interlayer dielectrics in integrated circuitry. Dielectric films formed from TMCTS typically have k values in a range of from about 2.6 to about 3.0, but lack sufficient hardness for large-scale integration. For next generation very large-scale integration (VLSI) devices, dielectrics will be required that have a dielectric constant k below 2.5 with hardness greater than about 1 gigapascal (gPa). [0007] Accordingly, the art continues to seek improvements in dielectric materials, in the quest for dielectrics having both high mechanical strength and low k value. SUMMARY OF THE INVENTION [0008] The present invention relates generally to low dielectric constant films, and to precursors and methods useful in making such films, e.g., for the manufacture of semiconductor devices and products. [0009] In one aspect, the invention relates to an organosilicon precursor for vapor deposition, e.g., low pressure (<100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor comprises at least one of: [0010] (i) silicon-pendant oxiranyl functionality; and [0011] (ii) a disilyl moiety of the formula wherein x is an integer having a value of from 0 to 4 inclusive. [0012] In another aspect, the invention relates to an organosilicon precursor composition for vapor deposition of a low k, high strength dielectric film, wherein the composition comprises: (A) an organosilicon precursor comprising at least one of: [0013] (i) silicon-pendant oxiranyl functionality; and [0014] (ii) a disilyl moiety of the formula wherein x is an integer having a value of from 0 to 4 inclusive; and (B) a porogen. [0015] Another aspect of the invention relates to a method of forming an oxiranylsilane compound of formula (I): wherein: [0016] m is an integer having a value of 0 to 6, inclusive; [0017] n is 0 or 1; [0018] x is an integer having a value of 0 to 3, inclusive; and [0019] each R and R* can be the same as or different from one another and each is independently selected from the group consisting of H, C.sub.1-C.sub.8 alkyl, C.sub.1-C.sub.8 fluoroalkyl, C.sub.1-C.sub.8 alkoxy, C.sub.6-C.sub.10 cycloalkyl, C.sub.6-C.sub.10 aryl, C.sub.6-C.sub.10 fluoroaryl, C.sub.2-C.sub.6 vinyl, and C.sub.3-C.sub.6 allyl, [0020] such method comprising oxidizing a corresponding vinylsilane or allylsilane compound. [0021] In one preferred aspect, the oxiranylsilane compound has the formula (II) set out below: wherein: [0022] each of R.sub.1, R.sub.2 and R.sub.3 can be the same as or different from one another and each is independently selected from the group consisting of H, C.sub.1-C.sub.8 alkyl, C.sub.1-C.sub.8 fluoroalkyl, C.sub.1-C.sub.8 alkoxy, C.sub.6-C.sub.10 cycloalkyl, C.sub.6-C.sub.10 aryl, C.sub.6-C.sub.10 fluoroaryl, C.sub.2-C.sub.6 vinyl, and C.sub.3-C.sub.6 allyl; and [0023] n is 0 or 1; [0024] with the proviso that if n=1, then one of R.sub.1, R.sub.2 and R.sub.3 alternatively can be an oxiranyl functionality: (sometimes hereinafter referred to as ethyleneoxide functionality). [0025] Yet another aspect of the invention relates to a method of synthesizing a bridged disilane compound of formula (III): R.sup.4R.sup.5R.sup.6Si--(CH.sub.2).sub.y--SiR.sup.7R.sup.8R.sup.9 (III) wherein: [0026] each of R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8 and R.sup.9 can be the same as or different from one another and each is independently selected from the group consisting of H, C.sub.1-C.sub.8 alkyl, C.sub.1-C.sub.8 fluoroalkyl, C.sub.1-C.sub.8 alkoxyl, C.sub.6-C.sub.10 cycloalkyl, C.sub.6-C.sub.10 aryl, C.sub.6-C.sub.10 fluoroaryl, C.sub.2-C.sub.6 vinyl, C.sub.3-C.sub.6 allyl, and oxiranylalkylene of formula (IV) [0027] wherein s is 0 or 1; and [0028] y is an integer having a value of from 0 to 4 inclusive, [0029] such method comprising derivatization of a corresponding bridged chlorosilane. [0030] In a further aspect, the invention relates to a method of forming a low k, high strength dielectric film on a substrate, comprising vapor depositing said film on the substrate from a precursor comprising at least one of: [0031] (i) silicon-pendant oxiranyl functionality; and [0032] (ii) a disilyl moiety of the formula wherein x is an integer having a value of from 0 to 4 inclusive. Continue reading about Ethyleneoxide-silane and bridged silane precursors for forming low k films... Full patent description for Ethyleneoxide-silane and bridged silane precursors for forming low k films Brief Patent Description - Full Patent Description - Patent Application Claims Click on the above for other options relating to this Ethyleneoxide-silane and bridged silane precursors for forming low k films patent application. ###  How KEYWORD MONITOR works... a FREE service from FreshPatents1. Sign up (takes 30 seconds). 2. Fill in the keywords to be monitored. 3. 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