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Etching a substrate: processes March listing by industry category 03/10Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 03/25/2010 > patent applications in patent subcategories. listing by industry category
20100072169 - Methods and systems for preventing feature collapse during microelectronic topography fabrication: Methods for preventing feature collapse subsequent to etching a layer encasing the features include adding a non-aqueous liquid to a microelectronic topography having remnants of an aqueous liquid arranged upon its surface and subsequently exposing the topography to a pressurized chamber including a fluid at or greater than its saturated... Agent: Daffer Mcdaniel LLP
20100072170 - Short pitch metal gratings and methods for making the same: Methods for forming a metal grating include providing a first grating including a plurality of grating lines formed from a dielectric material, each grating having a pair of sidewalls, facing sidewalls of adjacent grating lines being separated by corresponding trenches, the grating lines and trenches forming a grating surface; forming... Agent: Fish & Richardson P.C.
20100072171 - Method of fabricating a printhead ic: Provided is a method of fabricating a printhead integrated circuit (IC). The method includes the step of depositing metal layers interspersed with interlayer dielectric (ILD) layers onto a silicon wafer substrate. A passivation layer is deposited onto an outermost metal layer and at least a portion of the passivation layer... Agent: Silverbrook Research Pty Ltd
20100072172 - Substrate processing apparatus and substrate processing method: There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP
20100072173 - Surface profile adjustment using gas cluster ion beam processing: A method of treating a workpiece is described. The method comprises selectively forming a sacrificial material on one or more regions of a substrate or a layer on the substrate using a gas cluster ion beam (GCIB), and adjusting a surface profile of a surface on the substrate or the... Agent: Wood, Herron & Evans, LLP (tokyo Electron)03/18/2010 > patent applications in patent subcategories. listing by industry category
20100065529 - Nanoimprinting of an optic to control the etch pattern on electrolytic capacitor foil: A method of etching a foil for use in an electrolytic capacitor utilizes a nanoimprinted optic to control the etch pattern. The optic is formed by creating a self-assembled monolayer (SAM) of hemispheres onto the surface of an optical quartz substrate. A laser is directed onto the optic while the... Agent: Steven M Mitchell Pacesetter Inc
20100065530 - Composition and process for the selective remove of tisin: An aqueous removal composition and process for removing heater material, including TiSiN, from a microelectronic device having said material thereon. The aqueous removal composition includes at least one fluoride source, at least one passivating agent, and at least one oxidizing agent. The composition selectively removes TiSiN relative to oxides and... Agent: Moore & Van Allen PLLC
20100065531 - Methods of patterning a substrate: A method of patterning a substrate in accordance with an embodiment of the invention includes forming a plurality of openings within at least one of photoresist and amorphous carbon. The openings are of common outermost cross sectional shape relative one another. Individual of the openings have at least one lateral... Agent: Wells St. John P.s.03/11/2010 > patent applications in patent subcategories. listing by industry category
20100059475 - Method of nanoscale patterning using block copolymer phase separated nanostructure templates: A method of forming nanostructures using block copolymer nanostructure templates is disclosed herein. The method includes forming a nanostructure template by patterning a block copolymer on a substrate and allowing the block copolymer to phase separate to form the nanostructure template. The nanostructure template can then be loaded with a... Agent: Marshall, Gerstein & Borun LLP
20100059476 - Method for manufacturing a magnetic storage medium: A method for manufacturing a magnetic storage medium that improves the flatness of the magnetic storage medium. A storage layer is formed on a substrate. Next, a resist mask is formed above the storage layer. Then, a pit is formed in the storage layer using the resist mask. Afterwards, a... Agent: Patterson, Thuente, Skaar & Christensen, P.A.
20100059477 - Formation of deep hollow areas and use thereof in the production of an optical recording medium: At least one hollow zone is formed in a stack of at least one upper layer and one lower layer. The upper layer is patterned to form at least a first hollow region passing through said upper layer. The first hollow region is extended by a second hollow region formed... Agent: Oliff & Berridge, PLC
20100059478 - Apparatus for plasma processing and method for plasma processing: There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma... Agent: Hosoon Lee03/04/2010 > patent applications in patent subcategories. listing by industry category
20100051577 - Copper layer processing: The present disclosure includes devices, methods, and systems for processing copper and, in particular, copper layer processing using sulfur plasma, One or more embodiments can include a method of forming a copper sulfur compound by reacting copper with a plasma gas including sulfur and removing at least a portion of... Agent: Brooks, Cameron & Huebsch , PLLC
20100051578 - Method for fabricating an integrated circuit: A method for fabricating an integrated circuit includes providing a substrate having thereon a material layer; forming trenches in the material layer; forming damascened wires in the trenches; covering the damascened wires and the material layer with a cap layer; forming a through hole in the cap layer that exposes... Agent: North America Intellectual Property Corporation
20100051579 - Pattern formed body and method for manufacturing same: A main object of the present invention is to provide a pattern formed body capable of forming highly precise functional parts on various base materials, and a method for manufacturing the same. To achieve the object, the present invention provides a method for manufacturing a pattern formed body, having a... Agent: Ladas & Parry LLP
20100051580 - Method of manufacturing inkjet printhead: A method of manufacturing an inkjet printhead includes forming a chamber layer having multiple ink chambers on a substrate. A sacrificial layer is formed and is configured to fill a space associated with the ink chambers on the chamber layer. A nozzle layer is formed on the top surfaces of... Agent: Dla Piper LLP Us
20100051581 - Plasma cleaning for process chamber component refurbishment: A method for cleaning and refurbishing a chamber component includes placing a chamber component having process deposits on an exterior surface in a plasma vapor deposition chamber. The chamber component is bombarded with a plasma comprising Argon for a period of time sufficient to remove the process deposits from the... Agent: Duane Morris LLP (tsmc)IPDepartment
20100051582 - Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith: It is disclosed a cleaning liquid used in a process for forming a dual damascene structure comprising steps of etching a low dielectric layer (low-k layer) accumulated on a substrate having thereon a metallic layer to form a first etched-space; charging a sacrifice layer in the first etched-space; partially etching... Agent: Wenderoth, Lind & Ponack, L.L.P.
20100051584 - Plasma processing apparatus and plasma processing method: A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a of a substrate 2. A dielectric plate 23 has a tray support surface 28... Agent: Wenderoth, Lind & Ponack L.L.P.Previous industry: Bottles and jars
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