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USPTO Class 216 | Browse by Industry: Previous - Next | All 10/2009 | Recent | 09: Oct | Sept | Aug | Jul | Jun | May | Apr | Mar | Feb | Jan | | 08: Dec | Nov | Oct | Sp | Aug | Jul | Jun | May | Apr | Mar | Feb | Jan | | 07: Dec | Nov | Oct | Sep | Aug | Jul | Jun | May | Apr | Mar | Feb | Jan | | 06: Dec | Nov | Oct | Sep | Aug | Jul | Jun | May | Apr | Etching a substrate: processes inventions 10/09Recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.Listing format for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 10/01/2009 > patent applications in patent subcategories. 20090242506 - Wired circuit board and method for manufacturing wired circuit board and mounting electronic component thereon: A wired circuit board is provided having a high-reliability conductive pattern formed thereon and mounting an electronic component thereon with high accuracy, and a method is provided for manufacturing the wired circuit board and mounting the electronic component thereon. An insulating layer including a mounting portion is formed on a... Agent: Akerman Senterfitt 20090242507 - Manufacturing process of electrode: A resist layer is formed over one surface of a current-collector material, while a resist layer having a predetermined pattern is formed on the other surface of the current-collector material. Through-holes are formed on the current-collector material through an etching process. An electrode slurry is applied onto the current-collector material... Agent: Darby & Darby P.C. 20090242509 - Imprint mold structure and imprint method using the same, and method for manufacturing magnetic recording medium: r 20090242508 - Method for manufacturing magnetic recording medium: A filling material different from a first mask layer (temporary coating material) is deposited over a workpiece to fill concave portions. At least part of excess portions of the filling material is removed by a dry etching method such that at least part of the side surfaces of the first... Agent: Oliff & Berridge, PLC 20090242510 - Photoelectric coupling assembly and manufacturing method thereof: A photoelectric coupling assembly and manufacturing method thereof enabling a three dimensional electrical wiring pattern is provided. The assembly includes a photoelectric conversion unit equipped with a photoelectric conversion element and a molded article. The molded article has a hole configured and arranged to have an optical fiber inserted there-through... Agent: GlobalIPCounselors, LLP 20090242511 - Seasoning method for film-forming apparatus: A seasoning method for a film-forming apparatus configured to form a silicon nitride film on a substrate placed in a process chamber. The method is conducted for reducing particles in the apparatus. The method comprises executing the plasma cleaning of the process chamber to remove a film deposited on the... Agent: Westerman, Hattori, Daniels & Adrian, LLP 20090242512 - Deep reactive ion etching: s 20090242514 - Etch process and etching chamber: The invention relates to a process for etching a substrate (3) in an etching chamber (1) with a plasma ignited outside of the etching chamber (1). The process is characterized in that during the etching process at least temporarily at least one gas jet (10) is directed from the side... Agent: Kriegsman & Kriegsman 20090242513 - Multi-layer/multi-input/multi-output (mlmimo) models and method for using: The invention provides a method of processing a substrate using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more masking layer creation procedures, one or more pre-processing measurement procedures, one or more Partial-Etch (P-E) procedures, one or more Final-Etch (F-E) procedures, and one or... Agent: Tokyo Electron U.s. Holdings, Inc. 20090242515 - Plasma processing apparatus and plasma etching method: A plasma processing apparatus includes an inner upper electrode provided to face a lower electrode mounting thereon a substrate, an outer upper electrode provided in a ring shape at a radially outside of the inner upper electrode and electrically isolated from the inner upper electrode in a vacuum evacuable processing... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C. 20090242516 - Plasma etching method and computer readable storage medium: A plasma etching method includes disposing a first electrode and a second electrode to face each other; preparing a part in the processing chamber; supporting a substrate; vacuum-evacuating the processing chamber; supplying an etching gas into a processing space between the first electrode and the second electrode; generating a plasma... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C. 20090242517 - Substrate treating apparatus and substrate treating method: A substrate treating apparatus for performing a predetermined treatment of substrates with a treating liquid. The apparatus includes a treating tank for storing the treating liquid; a lifter having holding elements for holding the substrates, and vertically movable between a standby position above the treating tank and a treating position... Agent: Ostrolenk Faber Gerb & Soffen Previous industry: Bottles and jarsNext industry: Wooden receptacles ###### RSS FEED for 20091112: Integrate FreshPatents.com into your RSS reader/aggregator or website to track weekly updates. For more info, read this article. ###### Thank you for viewing Etching a substrate: processes patents on the FreshPatents.com website. These are patent applications which have been filed in the United States. There are a variety ways to browse Etching a substrate: processes patent applications on our website including browsing by date, agent, inventor, and industry. If you are interested in receiving occasional emails regarding Etching a substrate: processes patents we recommend signing up for free keyword monitoring by email. ### FreshPatents.com Support Results in 0.09477 seconds |
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