Etching a substrate: processes inventions 08/08

20080203052 - Method of fabricating a microresonator: A method of fabricating a microresonator is disclosed. Initially, silica is deposited on a substrate, and the substrate is etched to form a pillar, the top portion of which supports the silica. The microresonator is then formed from the silica. Next, the pillar is etched to reduce the overall diameter... Agent: Connolly Bove Lodge & Hutz LLP

20080203053 - Method for manufacturing magnetic recording medium, stamper, transferring apparatus, and method for forming resin mask: A reliable magnetic recording medium manufacturing method is provided in which a resin material used for processing a recording layer into a concavo-convex pattern can be removed reliably. In the magnetic recording medium manufacturing method, an energy ray curable resin material is spread over a continuous recording layer. Then, a... Agent: Oliff & Berridge, PLC

20080203054 - Planarization of a layer over a cavity: A method for fabricating a micro structure includes disposing a sacrificial material in a recess formed in a lower layer and forming a layer of compensatory material on the sacrificial material in the recess. The compensatory material is higher than the upper surface of the lower layer. A first portion... Agent: Fish & Richardson P.C.

20080203055 - Method of forming one or more nanopores for aligning molecules for molecular electronics: A technique is provided for forming a molecule or an array of molecules having a defined orientation relative to the substrate or for forming a mold for deposition of a material therein. The array of molecules is formed by dispersing them in an array of small, aligned holes (nanopores), or... Agent: Hewlett Packard Company

20080203056 - Methods for etching high aspect ratio features: Methods for forming features for high aspect ratio application in etch process are provided in the present invention. In one embodiment, the method for etching a dielectric layer disposed on a substrate includes placing a substrate having a portion of a dielectric layer exposed through a patterned photoresist layer in... Agent: Patterson & Sheridan, LLP - - Appm/tx

20080203058 - Substrate developing method and developing apparatus: A method for developing a substrate includes a developing step for supplying a developer to the substrate, and a neutralizing and removing step for supplying a treating solution containing a neutralizing material to the substrate to neutralize the developer, and neutralizing the developer and removing the developer from the substrate.... Agent: Townsend And Townsend And Crew, LLP

20080203057 - Wet cleaning process and method for fabricating semiconductor device using the same: A wet cleaning process is provided. The wet cleaning process includes at least one first rinse process and a second rinse step. The first rinse step includes rinsing a substrate using deionized water containing CO2, and then draining the water containing CO2 to expose the substrate in an atmosphere of... Agent: J C Patents, Inc.

20080203059 - Dilutable cmp composition containing a surfactant: The inventive polishing composition comprises an abrasive, an aqueous medium, a surfactant in an amount above its critical micelle concentration, and a hydrophobic surface active compound. The invention also provides a method of using a polishing composition.... Agent: Steven Weseman Associate General Counsel, I.p.

20080203060 - Etching method and etching composition useful for the method: By an etching method for silicon nitride using a composition comprising a phosphorus compound, a boron compound, a silicon compound and/or their fluorides thereof, there will be no precipitation of silicon oxide even when the composition is used for a long time. It is particularly preferred to further add nitric... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20080197106 - Method for manufacturing semiconical microneedles and semiconical microneedles manufacturable by this method: A method for manufacturing semiconical microneedles in an Si-semiconductor substrate and a semiconical microneedles manufacturable made by this method.... Agent: Kenyon & Kenyon LLP

20080197107 - Method of fabricating a grayscale mask using a wafer bonding process: A method of fabricating a grayscale mask includes preparing a quartz wafer; depositing a layer of Si3N4 on the quartz wafer; depositing a layer of titanium/TEOS directly on the Si3N4 layer on the backside of the quartz wafer; removing the layer of Si3N4 from the front side of the quartz... Agent: David C. Ripma Sharp Laboratories Of America, Inc.

20080197108 - Fluid ejection assembly: A fluid ejection assembly includes a first layer, and a second layer positioned on a side of the first layer. The second layer has a side adjacent the side of the first layer and includes barriers defining a fluid chamber on the side, a drop ejecting element formed within the... Agent: Hewlett Packard Company

20080197109 - Etch pattern definition using a cvd organic layer as an anti-reflection coating and hardmask: A multilayer antireflective hard mask structure is disclosed. The structure comprises: (a) a CVD organic layer, wherein the CVD organic layer comprises carbon and hydrogen; and (b) a dielectric layer over the CVD organic layer. The dielectric layer is preferably a silicon oxynitride layer, while the CVD organic layer preferably... Agent: Applied Materials, Inc.

20080197110 - Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates: A pulsed plasma system with pulsed sample bias for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. A negative bias is applied to the sample during... Agent: Applied Materials/blakely

20080197111 - Method for fabricating flash memory device: A method for fabricating a nonvolatile memory device includes forming a gate stack over a substrate, the gate stack including an aluminum oxide layer as a dielectric layer, and etching the aluminum oxide layer of the gate stack using a gas containing silicon.... Agent: Lowe Hauptman Ham & Berner, LLP

20080197112 - Chemical assisted lapping and polishing of metals: Compositions for lapping gears and methods for preparing the same are described. These compositions contain a salt of polyaspartic acid and may contain additional components that are useful for lapping gears. Also provided are processes for using the compositions described herein.... Agent: Howson And Howson

20080190885 - Method for manufacturing cantilever structure of probe card: A method for manufacturing a cantilever structure of a probe card is disclosed. In accordance with the method of the present invention, a first sacrificial wafer is used as a mold to form a cantilever structure having various shapes, a microscopic pitch and a high aspect ratio. In accordance with... Agent: Sughrue Mion, Pllc

20080190886 - Differential etch rate control of layers deposited by chemical vapor deposition: A method and apparatus is provided for controlling the etch profile of a multilayer layer stack by depositing a first and second material layer with differential etch rates in the same or different processing chamber. In one embodiment of the invention, a process for etching substrate material is provided including... Agent: Patterson & Sheridan, LLP - - Appm/tx

20080190887 - Manufacture filtration elements: Selective etching techniques are used to manufacture a basic filtration element, which can then be used as a basis for constructing various devices for different applications. In this process, sheets of etchable material are etched from one or both sides of that sheet to form channels in a premasked pattern,... Agent: Hayes Soloway P.c.

20080190889 - Roller with microstructure and the manufactruing method thereof: The present invention discloses a method for manufacturing a roller with microstructure, comprising the steps of: forming a protective metal layer on a roller; defining specific imprint patterns on an imprint stamp by processing the imprint stamp with a flexible mold; forming an etch mask on the embossed imprint stamp... Agent: Bruce H. Troxell

20080190888 - Sub-micron decal transfer lithography statement regarding federally sponsored research or development: The present invention provides a method of sub-micron decal transfer lithography. The method includes forming a first pattern in a surface of a first silicon-containing elastomer, bonding at least a portion of the first pattern to a substrate, and etching a portion of at least one of the first silicon-containing... Agent: Williams, Morgan & Amerson

20080190890 - Method for forming mask for using dry-etching and method for forming fine structure pattern: In the invention of this application, the resist pattern having a given pattern of opening concavity is formed on the component to be dry etched, the aqueous solution containing a water-soluble resin is filled in that opening concavity, and the filled aqueous solution containing a water-soluble resin is dried into... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.c.

20080190891 - Method for manufacturing probe structure of probe card: A method for manufacturing a probe structure of a probe card is disclosed. In accordance with the present invention, a portion of a substrate exposed through a crossing region of one more probe beam regions defined by a first mask layer pattern and a windows defined by a second mask... Agent: Sughrue Mion, Pllc

20080190892 - Plasma etching method, plasma etching apparatus, control program and computer-readable storage medium: A plasma etching method includes: plasma etching a silicon oxide film to be etched that is positioned under a multi-layer resist mask by using the multi-layer resist mask formed on a substrate to be processed; and plasma etching a glass based film positioned under the silicon oxide film by using... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.c.

20080190893 - Plasma processing method and plasma processing apparatus: The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112... Agent: Mcdermott Will & Emery LLP

20080190894 - Chemical mechanical polishing slurries, their applications and method of use thereof: This invention disclosed a chemical mechanical polishing slurry, which includes at least one abrasive particle, an oxidant and a carrier. The oxidant is combined with a big metallorganic compound; and the applications and corresponding handling method are also disclosed. This invention slurry can realize high removal rate, no corrosion, low... Agent: Jacobson Holman Pllc

20080185361 - Compositions for electronic circuitry applications and methods relating thereto: Compositions useful in circuitry substrates are described which have a polyimide component, and a sterically hindered hydrophobic epoxy component. Generally, a flowable precursor is applied and then cured to a wholly or partially solidified mass. The invention is also directed to methods of forming a passive electrical component upon or... Agent: E I Du Pont De Nemours And Company Legal Patent Records Center

20080185362 - Printed circuit board and manufacturing method thereof: A printed circuit board includes a flexible insulated substrate with a first surface and a second surface at both sides respectively, a wiring layer on the first surface, a reinforcement plate on a part of the second surface and an auxiliary layer between the second surface and the reinforcement plate.... Agent: Sughrue Mion, PLLC

20080185363 - Method and system of making metal casing: The invention provides a method of making a metal casing, including the following steps: (a) providing a roll of metal sheet; (b) sequentially pulling out a part of metal sheet from the roll of metal sheet; (c) etching a plurality of holes on the part of metal sheet; and (d)... Agent: Birch Stewart Kolasch & Birch

20080185364 - Plasma etching method, plasma etching apparatus, control program and computer-readable storage medium: A plasma etching method etches an organic film formed on a target substrate by using a plasma of a processing gas via a silicon-containing mask. The processing gas is a gaseous mixture of an oxygen-containing gas, a rare gas and a carbon fluoride gas. A computer-executable control program controls a... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.