Etching a substrate: processes inventions 07/08

20080179278 - Surface acoustic wave device and manufacturing method therefor, and communications equipment: A surface acoustic wave device configured by forming an oxide layer 2 on a piezoelectric substrate 1 composed of a lithium tantalate single crystal or a lithium niobate single crystal and having weak pyroelectric properties having a lower oxygen content than a stoichiometric composition ratio, and forming thereon an IDT... Agent: Hogan & Hartson L.L.P.

20080179279 - Method for electrochemical fabrication: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first... Agent: Microfabrica Inc. Att: Dennis R. Smalley

20080179280 - Method for forming an indium cap layer: An indium cap layer is formed by blanket depositing indium onto a surface of metallic interconnects separated by interlayer dielectric, and then selectively chemically etching the indium located on the interlayer dielectric leaving an indium cap layer. Etchants containing a strong acid are provided for selectively removing the indium.... Agent: Connolly Bove Lodge & Hutz LLP (for IBM Yorktown)

20080179281 - Methods for fabricating device features having small dimensions: Methods for fabricating devices having small feature sizes are provided. In an exemplary embodiment, a method comprises forming a patterned first mask layer overlying a subject material layer and isotropically etching the patterned first mask layer. A second masking layer is deposited overlying the patterned first mask layer and the... Agent: Ingrassia Fisher & Lorenz, P.C. (amd)

20080179282 - Mask etch process: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one embodiment, a method is provided for processing a substrate including positioning a substrate having a metal photomask layer disposed on a optically transparent material in a processing chamber, introducing... Agent: Patterson & Sheridan, LLP - - Appm/tx

20080179283 - Plasma etching method and plasma etching apparatus: A plasma etching method includes accommodating a target substrate in a processing chamber; supplying a processing gas from a processing gas supplying mechanism disposed to face the target substrate and configured to be able to supply different processing gases to a central portion and a peripheral portion of the target... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20080179284 - Methods of operating an electromagnet of an ion source: Methods of operating an electromagnet of an ion source for generating an ion beam with a controllable ion current density distribution. The methods may include generating plasma in a discharge space of the ion source, generating and shaping a magnetic field in the discharge space by applying a current to... Agent: Wood, Herron & Evans, LLP

20080179285 - Wafer holding device for etching process and method for controlling etch rate of a wafer: A wafer holding device for etching process, includes a base pallet; a cover pallet disposed on the base pallet, the cover pallet having at least one receiving hole defined therein; a base pad located on the base pallet and contained in the receiving hole; and a wafer jig placed on... Agent: Nixon & Vanderhye, PC

20080179286 - Dielectric plasma chamber apparatus and method with exterior electrodes: A dielectric barrier discharge plasma generator includes a dielectric chamber. The chamber contains or incorporates a solid surface that is to be treated with non-thermal plasma. The dielectric chamber can be substantially sealed and confine an atmosphere therein. An atmosphere control system is provided for controlling the atmosphere within the... Agent: Bruce A. Jagger

20080179291 - Process for wafer backside polymer removal and wafer front side photoresist removal: A process is provided for removing polymer from a backside of a workpiece and/or photoresist from a front side of the workpiece. For backside polymer removal, the wafer is positioned near the ceiling to above a localized or remote plasma source having a side outlet through the sidewall of the... Agent: Law Office Of Robert M. Wallace

20080179288 - Process for wafer backside polymer removal and wafer front side scavenger plasma: A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within... Agent: Robert M. Wallace Law Office Of Robert M. Wallace

20080179289 - Process for wafer backside polymer removal with a plasma stream: A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. The process further includes confining gas flow at an edge of the workpiece within... Agent: Robert M. Wallace Law Office Of Robert M. Wallace

20080179287 - Process for wafer backside polymer removal with wafer front side gas purge: A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. Gas flow is confined at the edge of the workpiece within a gap at... Agent: Robert M. Wallace Law Office Of Robert M. Wallace

20080179290 - Temperature-switched process for wafer backside polymer removal and front side photoresist strip: A workpiece is supported on the backside in a vacuum chamber while leaving at least a peripheral annular portion of a backside of the workpiece exposed. The process first increases the temperature of the workpiece starting at a temperature below about 200 degrees C. The edge of the workpiece is... Agent: Law Office Of Robert M. Wallace

20080179292 - Substrate processing method and substrate processing apparatus: A substrate processing method that can remove a silicon nitride film without damaging a thermally-oxidized film. A substrate having at least a thermally-oxidized film and a silicon nitride film formed on the thermally-oxidized film is heated to a temperature of not less than 60° C. Then, hydrogen fluoride gas is... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20080179293 - Apparatus and method for controlling silicon nitride etching tank: A method and system for controlling a silicon nitride etching bath provides the etching bath including phosphoric acid heated to an elevated temperature. The concentration of silicon in the phosphoric acid is controlled to maintain a desired level associated with a desired silicon nitride/silicon oxide etch selectivity. Silicon concentration is... Agent: Duane Morris LLPIPDepartment (tsmc)

20080179294 - Glass compositions useful for rie structuring: A glass composition suitable for reactive ion etching.... Agent: Millen, White, Zelano & Branigan, P.C.

20080173615 - Etch resist solution, method of fabricating thin film pattern using the same and method of fabricating an lcd device using the same: A method of fabricating a thin film pattern improve the life of a blanket and reduce the cost and improve reliability in forming the thin film pattern. The method includes injecting an etch resist solution into a blanket on a printing roller, wherein the etch resist solution includes a printing... Agent: Song K. Jung Mckenna Long & Aldridge LLP

20080173616 - Inkjet recording head, method for producing same, and semiconductor device: A method for producing an inkjet recording head includes preparing the substrate having a through hole to be formed into a supply port, the through hole having openings on the first surface and the second surface, the substrate having a first protective layer disposed on the second surface, the first... Agent: Canon U.s.a. Inc. Intellectual Property Division

20080169267 - Solution for removing aluminum oxide film and method for surface treatment of aluminum or aluminum alloy: The removing solution makes it possible to form a film of the metal derived from the metal salt or oxide contained in the removing solution by dissolving away the oxide film from the aluminum or aluminum alloy surface at a low temperature and a high speed while restraining, as securely... Agent: Birch Stewart Kolasch & Birch

20080169268 - Processes and materials for step and flash imprint lithography: A method of forming an image. The method includes: a transfer layer on a substrate; forming on the transfer layer, an etch barrier layer; pressing a template having a relief pattern into the etch barrier layer; exposing the etch barrier layer to actinic radiation forming a cured etch barrier layer... Agent: Schmeiser, Olsen & Watts

20080169269 - Method for processing wafer in reaction chamber: A method for processing a wafer in a reaction chamber is provided. The method includes the following steps: performing an over-etching, so as to have a sufficient oxide-layer isolation depth between metal wires; applying high-bias, high-watt plasma, so as to remove a reaction polymer on a surface of the wafer,... Agent: Wpat, PC Intellectual Property Attorneys

20080169270 - Method of removing a case layer from a metal alloy: A method of surface treating a metallic article includes the step of chemically removing a surface layer having titanium alloy alpha-phase precipitation to expose a core having titanium alloy beta-phase. In one example, the chemical removal includes using a first solution having nitric acid and hydrofluoric acid, and a second... Agent: Carlson, Gaskey & Olds/pratt & Whitney

20080164236 - Method for manufacturing printed circuit board: An insulating layer made of an insulator film or the like is prepared. Then, a thin metal film and a thin copper film are formed in sequence on the insulating layer. The thin copper film is subsequently laminated with a dry film or the like, and exposed and developed to... Agent: Panitch Schwarze Belisario & Nadel LLP

20080164237 - Piezoelectric-driven mems device and method for manufacturing the same: A piezoelectric-driven MEMS device can be fabricated reliably and consistently. The piezoelectric-driven MEMS device includes: a movable flat beam having a piezoelectric film disposed above a substrate with a recessed portion such that the piezoelectric film is bridged over the recessed portion, piezoelectric drive mechanisms disposed at both ends of... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20080164238 - Method of etching a metal oxide layer: A method of etching a metal oxide layer formed on a metal layer is provided. The method includes mounting a specimen having the metal oxide layer and a photoresist on the metal oxide layer in a reaction chamber, wherein the metal oxide layer is formed on the metal layer and... Agent: Harness, Dickey & Pierce, P.L.C

20080164239 - Triangular nanoframes and method of making same: The present invention provides nanoprisms etched to generate triangular framework structures. These triangular nanoframes possess no strong surface plasmon bands in the ultraviolet or visible regions of the optical spectrum. By adding a mild reducing agent, metal ions remaining in solution can be reduced, resulting in metal plating and reformation... Agent: Marshall, Gerstein & Borun LLP

20080156767 - Method for fabricating image sensor: Provided is a method for fabricating an image sensor. In the method, a low temperature oxide layer is formed on a color filter layer, and a photoresist pattern is formed on the low temperature oxide layer. Subsequently, a heat treatment is performed on the photoresist pattern to form sacrificial microlenses.... Agent: The Law Offices Of Andrew D. Fortney, Ph.d., P.c.

20080156768 - Methods for making internal die filters with multiple passageways which are fluidically in parallel: An internal filter includes a lower substrate and an upper substrate. Fluid passages are formed by etching grooves into the surface(s) of the upper and/or lower substrates, and/or in one or more intermediate layers. The filter pores extending between the fluid passages are formed by etching second grooves that fluidly... Agent: Oliff & Berridge, Plc.

20080156769 - Advanced mixing system for integrated tool having site-isolated reactors: An integrated processing tool is described comprising a full-wafer processing module and a combinatorial processing module. Chemicals for use in the combinatorial processing module are fed from a delivery system including a set of first manifolds. An output of each first manifold is coupled to at least one mixing vessel.... Agent: Martine Penilla Gencarella, LLP

20080156771 - Etching apparatus using neutral beam and method thereof: An etching apparatus using a neutral beam includes an electron emission unit to convert an ion beam, extracted from plasma by a plurality of grids, into a neutral beam by colliding the ion beam with electrons to prevent the ion beam from physically colliding with the electron emission unit, thus... Agent: Stanzione & Kim, LLP

20080156770 - Method of fabricating grabbing face of sample grabbing portion: By working a grabbing portion by a charged particle beam of FIB or the like, the grabbing portion in parallel with the beam can be formed, and also dust adhered to the grabbing portion is removed. When a small sample represented by a TEM sample is fabricated by being cut... Agent: Brinks Hofer Gilson & Lione

20080156772 - Method and apparatus for wafer edge processing: Methods and apparatus for remedying arc-related damage to the substrate during plasma bevel etching. A plasma shield is disposed above the substrate to prevent plasma, which is generated in between two annular grounded plates, from reaching the exposed metallization on the substrate. Additionally or alternatively, a carbon-free fluorinated process source... Agent: Ipsg, P.c.

20080156773 - End point detection method applying resonance phenomenon, end point detection apparatus, chemical mechanical polishing apparatus on which the detection apparatus is loaded, and semiconductor device fabricated by the chemical mechanical polishing apparatus: In order to achieve above described objects, the present invention provides an end point detection method applying a resonance phenomenon in which a polishing end point is detected when the electrically conductive film is polished and removed to an appropriate thickness, wherein a sensor 37 composed of an oscillation circuit... Agent: Paul A. Fattibene Fattibene & Fattibene

20080156774 - Cmp method for gold-containing substrates: The invention provides a method of chemically-mechanically polishing a gold-containing surface of a substrate with a cyanide-free chemical-mechanical polishing (CMP) composition.... Agent: Steven Weseman Associate General Counsel, I.p.