Etching a substrate: processes inventions 06/08

20080149590 - Substrate-holder, etching method of the substrate, and the fabrication method of a magnetic recording media: A substrate holder that forms a concavo-convex pattern on recording layers of both of front and back sides of a magnetic recording media is provided. The substrate holder includes an insulator member having a concave portion that holds the etching substrate and a through-hole formed just below the concave portion,... Agent: Antonelli, Terry, Stout & Kraus, LLP

20080149591 - Method and slurry for reducing corrosion on tungsten during chemical mechanical polishing: A composition and associated method for the chemical mechanical planarization (CMP) of tungsten-containing substrates on semiconductor wafers are described. The composition contains an anionic fluorosurfactant, a per-type oxidizer (e.g., hydrogen peroxide), and iron. The composition and associated method are effective in affording greatly reduced levels of tungsten etching during tungsten... Agent: Air Products And Chemicals, Inc. Patent Department

20080149592 - Plasma etch process for controlling line edge roughness: Line edge smoothness in a hardmask etch process is improved by widening the chamber pressure process window by applying VHF power and increasing the chamber pressure to near the maximum value of the widened process window.... Agent: Law Office Of Robert M. Wallace

20080149593 - Multiple deposition for integration of spacers in pitch multiplication process: Pitch multiplication is performed using a two step process to deposit spacer material on mandrels. The precursors of the first step react minimally with the mandrels, forming a barrier layer against chemical reactions for the deposition process of the second step, which uses precursors more reactive with the mandrels. Where... Agent: Knobbe Martens Olson & Bear LLP

20080149594 - Apparatus and process for forming and handling porous materials: An apparatus and process for producing a porous particulate media, such as nano-porous silicon (npSi). The apparatus has a rigid etching chamber configured to contain an etching reagent, an inlet for introducing the etching reagent into the etching chamber, and an outlet for outflow of the etching reagent from the... Agent: Hartman & Hartman, P.c.

20080149595 - Confinement ring drive: A confinement assembly for a semiconductor processing chamber is provided. The confinement assembly includes a plurality of confinement rings disposed over each other. Each of the plurality of confinement rings are separated by a space and each of the plurality of confinement rings have a plurality of holes defined therein.... Agent: Martine Penilla & Gencarella, LLP

20080149596 - Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber: Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the... Agent: Buchanan, Ingersoll & Rooney Pc

20080149598 - Substrate processing apparatus, focus ring heating method, and substrate processing method: A substrate processing apparatus that can accurately control the temperature of a focus ring without causing abnormal electric discharge and the back-flow of radio frequency electrical power during the application of radio frequency electrical power. A wafer is mounted on a mounting stage disposed in a housing chamber. An annular... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.c.

20080149597 - Temperature control method for photolithographic substrate: The present invention provides a method for processing a photolithographic substrate, comprising the placement of the photolithographic substrate on a support member in a chamber wherein the photolithographic substrate has an initial temperature of about zero degrees Celsius to about fifty degrees Celsius. A heat transfer fluid is introduced into... Agent: Harvey S. Kauget Phelps Dunbar, LLP

20080149599 - Method for manufacturing an electrokinetic infusion pump: A method for producing a porous flow-through element for use in an electrokinetic infusion pump is provided and generally includes providing a porous membrane that is entirely porous along both its length and width, treating the membrane by selectively inactivating portions of the membrane in a desired pattern to define... Agent: Nutter Mcclennen & Fish LLP

20080142474 - Methods of forming a pattern and methods of manufacturing a capacitor using the same: In a method of forming a pattern and a method of forming a capacitor, an oxide layer pattern having an opening is formed on a substrate. A conductive layer is formed on the oxide layer pattern and the bottom and sidewalls of the opening. A buffer layer pattern is formed... Agent: Mills & Onello LLP

20080142475 - Method of creating solid object from a material and apparatus thereof: A directed energy source is applied to a portion of a material, creating at least one altered region and leaving at least one unaltered region. The material is exposed to an etchant which removes the at least one altered region leaving substantially all of the unaltered region.... Agent: Fitch Even Tabin And Flannery

20080142476 - Multi-step photomask etching with chlorine for uniformity control: Methods for etching quartz are provided herein. In one embodiment, a method of etching quartz includes providing a film stack on a substrate support disposed in a processing chamber, the film stack having a quartz layer partially exposed through a patterned layer; and etching the quartz layer of the film... Agent: Moser Ip Law Group / Applied Materials, Inc.

20080142478 - Epoxy removal process for microformed electroplated devices: The present invention is directed to a method of removing epoxy-based photoresist from a manufactured metallic microstructure or deep etched via, comprising the steps of (1) providing a form comprising an epoxy-based photoresist and a manufactured metallic microstructure; (2) optionally exposing the form to a solvent, aqueous alkali, or amine-based... Agent: Wiggin And Dana LLP Attention: Patent Docketing

20080142477 - Process for the selective etching of a glass article surface: Process for the selective etching of a glass article surface with a hydrofluoric acidic solution, comprising a first step of selective protection of the surface with a wax deposited by an ink-jet head, a second attack step by the acidic solution and a third cleaning step of the surface.... Agent: Akerman Senterfitt

20080142479 - Micromachined titanium for high pressure microfluidic applications: In accordance with the invention, a method for making microfluidic structures in bulk titanium is disclosed. Specific microfluidic structures include HPLC structures.... Agent: Agilent Technologies Inc.

20080142480 - Method of finishing pre-polished glass substrate surface: The present invention is to provide a method by which the waviness generated in a glass substrate surface during pre-polishing are removed and the glass substrate is finished so as to have a highly flat surface. The present invention relates a method of finishing a pre-polished glass substrate surface, the... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.c.

20080142481 - In-situ particle collector: A plasma-processing chamber is configured with a particle collection conductor to remove charged particles from the chamber during plasma processing of substrates. The particle collection conductor is positioned in a processing region of the chamber and a power supply applies a DC bias to the conductor when plasma is present... Agent: Patterson & Sheridan, LLP - - Appm/tx

20080142483 - Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills: A method of forming a dielectric material in a substrate gap using a high-density plasma is described. The method may include depositing a first portion of the dielectric material into the gap with the high-density plasma. The deposition may form a protruding structure that at least partially blocks the deposition... Agent: Townsend And Townsend And Crew LLP / Amat

20080142482 - Multipurpose decapsulation holder and method for a ball grid array package: A method and apparatus for the decapsulation of integrated circuit packages. The apparatus includes a support member, the support member having an open region and an adjustable device coupled to the support member. The adjustable device can be adapted to hold a BGA package such that a surface region of... Agent: Townsend And Townsend And Crew, LLP

20080142484 - Auxiliary method for wet etching by oscillation flow modification and device for the same: The present invention provides an auxiliary method for wet etching by oscillation flow modification and an device for the same. The method for wet etching by oscillation flow modification includes steps of providing a metallic substrate, etching the metallic substrate with an etchant, and oscillating the etchant during etching the... Agent: Haverstock & Owens LLP

20080135515 - Method of fabricating mirrors for liquid crystal on silicon display device: The present invention discloses a method of fabricating mirrors for LCOS (Liquid Crystal On Silicon) display device, including: forming a dielectric layer over a silicon substrate; forming a stop layer over the dielectric layer; forming an insulation layer over the stop layer; etching the insulation layer and the stop layer... Agent: Squire, Sanders & Dempsey L.l.p.

20080135516 - Substrate treatment device: It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of... Agent: Oliff & Berridge, Plc

20080135517 - Method and apparatus for ashing a substrate using carbon dioxide: A method and apparatus for removing residue, such as etch reside, from a substrate with substantially reduced damage to the substrate in a plasma processing system is described. A plasma ashing process comprising carbon dioxide (CO2) and optionally a passivation gas, such as a hydrocarbon gas, i.e., CxHy, wherein x,... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.c.

20080135518 - Method and system for uniformity control in ballistic electron beam enhanced plasma processing system: A method and system for adjusting and controlling the plasma uniformity in a plasma processing system is described. The plasma processing system includes an electron source electrode to which direct current (DC) power is coupled in order to generate a ballistic electron beam during the etching of the substrate. A... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.c.

20080135519 - Plasma processing apparatus and control method thereof: In a plasma processing apparatus for processing an object to be processed by generating plasma in a processing chamber: a first electrode is arranged in the processing chamber and a second electrode is arranged to face the first electrode in the processing chamber; a first and a second power systems... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.c.

20080135520 - Chemical composition for chemical mechanical planarization: The chemical composition for a slurry for chemical mechanical planarization includes abrasive particles selected from the group consisting of SiO2, Al2O3, TiO2, and CeO2, and combinations thereof, and a silicate oligomer as a rate accelerator. The slurry may include an organic dispersion agent, and preferably has a has a pH... Agent: Fulwider Patton LLP

20080135521 - Implant surface preparation: The surface of a device that is surgically implantable in living bone is prepared. The device is made of titanium with a native oxide layer on the surface. The method of preparation comprises the steps of removing the native oxide layer from the surface of the device and performing further... Agent: Nixon Peabody, LLP

20080128383 - Etching apparatus and etching method: An etching apparatus for forming conductor patterns by etching a wiring board is provided. The etching apparatus includes a drum, a chamber and a nozzle head. The drum is configured to run a flexible wiring board under rotation while turning it around a drum face. The chamber is a chamber... Agent: Bell, Boyd & Lloyd, LLP

20080128384 - Method of manufacturing circuit board: An adhesive layer, an insulating layer and a copper foil are laminated together on both surfaces of a metallic base material by way of for example thermal press molding. In this case, openings (window holes) are formed in opposed positions on a portion of the adhesive layer. A circuit pattern... Agent: Sughrue-265550

20080128385 - Oscillator and method of making for atomic force microscope and other applications: A method for making a device which includes an oscillator, which includes depositing on silicon or other first material a layer of silicon nitride or other second material, forming in the first material a support structure and the oscillator, including applying an etchant which is selective for the first material... Agent: James C. Simmons

20080128386 - Method of manufacturing inkjet printhead: A method of manufacturing an inkjet printhead includes forming an insulating layer, heaters, and electrodes sequentially on a substrate, depositing a chamber layer having a plurality of ink chambers on the insulating layer, forming an ink feed hole in the substrate and the insulating layer to supply ink to the... Agent: Stanzione & Kim, LLP

20080128387 - Print head nozzle formation: Techniques are provided for forming nozzles in a microelectromechanical device. The nozzles are formed in a layer prior to the layer being bonded onto another portion of the device. Forming the nozzles in the layer prior to bonding enables forming nozzles that have a desired depth and a desired geometry.... Agent: Fish & Richardson P.c.

20080128388 - Method and apparatus for multilayer photoresist dry development: A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH3), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example,... Agent: Tokyo Electron U.s. Holdings, Inc.

20080128389 - Method to reduce charge buildup during high aspect ratio contact etch: A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas.... Agent: Dinsmore & Shohl LLP

20080128391 - Chemical etching composition for the preparation of 3-d nano-structures: A method of using a chemical compound as an etchant for the removal of unmodified areas of a chalcogenide-based glass, while leaving the imagewise modified areas un-removed, wherein the compound contains a secondary amine, R1 R2 NH, with R1 and/or R2 having a sterically bulky group with more than 5... Agent: Friedrich Kueffner

20080128390 - Fluidic mems device: A method includes depositing a sacrificial material on a substrate, and depositing a polymer layer on the substrate and the sacrificial material. The method further includes removing the sacrificial material to at least partially define boundaries of at least one fluidic channel of a fluidic micro electromechanical system (MEM) device,... Agent: Hewlett Packard Company