Etching a substrate: processes inventions 04/08

20080093335 - Method of manufacturing circuit board: There is provided a method of manufacturing a circuit board having a first fixed contact and a second fixed contact that extend substantially orthogonal to each other on the same surface, the life span required for the first fixed contact being longer than that required for the second fixed contact.... Agent: Brinks Hofer Gilson & Lione

20080093336 - Process for fabricating patterned magnetic recording media: A method of fabricating a patterned magnetic recording medium, comprises steps of: (a) providing a layer stack including an uppermost non-magnetic interlayer; (b) forming a resist layer on the interlayer; (c) forming a first pattern comprising a first group of recesses extending through the resist layer and exposing a first... Agent: Seagate Technology LLC C/o Mcdermott Will & Emery LLP

20080093337 - Tube joint and a method of bonding tubes: The invention is a method of bonding a first fluid conduit (14) to one or more other fluid conduits (12) or elements such as an electrode (92) or heating element. The method comprises positioning a first fluid conduit (14) substantially in contact with the other fluid conduits or elements (12)... Agent: Waters Investments Limited C/o Waters Corporation

20080093334 - Method of producing thin film transistor substrate: A method of producing a thin film transistor substrate to prevent an interconnection from being corroded during a dry etching process includes sequentially forming on an insulating substrate a gate interconnection, a gate insulating layer, an active layer, a conductive layer for a data interconnection, and a photoresist pattern including... Agent: Macpherson Kwok Chen & Heid LLP

20080093338 - Dry etching method and dry etching apparatus: An object of the present invention is suppressing notches in dry etching of a processing object where an etched layer made of a silicon material is formed on an etching stop layer. A substrate 12 has an etched layer 22 made of a silicon material on an etching stop layer... Agent: Wenderoth, Lind & Ponack L.L.P.

20080093339 - Processing apparatus and device manufacturing method: A processing apparatus configured to transfer a pattern of a mold onto a target member by pressing the mold against a resin applied to the target member includes a driver configured to move the mold and the target member relative to each other, and a controller configured to control the... Agent: Morgan & Finnegan, L.L.P.

20080093340 - Substrate processing method, substrate processing apparatus, and storage medium: At first, with a chamber being filled with a first gas, a process liquid is supplied onto a surface of a wafer in the chamber so as to process the surface of the wafer. At this time, the process liquid discharged from the chamber is returned to a process-liquid supplying... Agent: Dennis C. Rodgers Smith, Gambrell & Russell

20080093342 - Etching apparatus for semicondutor fabrication: Method of operating an apparatus which allows etching different substrate etch areas of a substrate having different pattern densities at essentially the same etch rate. The apparatus includes (a) a chamber; (b) an anode and a cathode in the chamber; and (c) a bias power system coupled to the cathode,... Agent: Schmeiser, Olsen & Watts

20080093341 - Rf plasma reactor having a distribution chamber with at least one grid: A plasma reactor has a reactor vessel and a pair of electrodes in the form of spaced apart and oppositely disposed metallic surfaces defining therebetween a plasma discharge space. At least one of the metallic surfaces is the surface of a metallic plate having a plurality of gas feed openings... Agent: Crowell & Moring LLP Intellectual Property Group

20080093343 - Method for treating the etching solution: The present etching system includes a processing tank with an etching solution containing silicon, a cooling tank, a pre-heating tank, a first pipe for transferring the etching solution from the processing tank to the cooling tank, a second pipe for transferring the etching solution from the cooling tank to the... Agent: Oliff & Berridge, PLC

20080087631 - Ion gun, ion beam etching apparatus, ion beam etching facility, etching method, and method for manufacturing magnetic recording medium: A compact ion gun capable of flattening both sides of a substrate, an ion beam etching apparatus provided with the ion gun, an ion beam etching facility, an etching method using them, and a method for manufacturing a magnetic recording medium are provided. The ion gun includes a plasma generation... Agent: Oliff & Berridge, PLC

20080087630 - Method of producing thin film magnetic head: A method of producing a thin film magnetic head includes the steps of: forming a second lower magnetic pole layer in a part on a first lower magnetic pole layer; forming, over the entire wafer surface, an insulating layer so as to be thicker than the thickness of the second... Agent: Oliff & Berridge, PLC

20080087632 - Fabrication method for quasi-phase-matched waveguides: The present invention relates to a fabrication method for a quasi-phase-matched waveguide. The method includes the steps of forming a metal etch mask on a ferroelectric single crystal substrate, etching the substrate by using the etch mask, removing the etch mask, forming conductive layers on the etched substrate, forming polarization... Agent: Thomas, Kayden, Horstemeyer & Risley, LLP

20080087633 - Method for forming a metal line and method for manufacturing display substrate having the metal line: A method for forming a metal line includes sequentially depositing a low-resistivity metal layer having aluminum on a base substrate and an upper layer having molybdenum on the low-resistivity metal layer, forming a photoresist pattern having a linear shape on the upper layer, etching the upper layer via a mixed... Agent: Macpherson Kwok Chen & Heid LLP

20080087635 - Method of etching a nickel oxide layer and method of manufacturing a storage node: An etching method of a nickel oxide layer and a method of manufacturing a storage node of a resistive memory including the nickel oxide layer are provided. The method of etching the nickel oxide layer includes forming a nickel oxide layer on a substrate, forming a mask pattern on a... Agent: Harness, Dickey & Pierce, P.L.C

20080087636 - Contact lithography apparatus and method: A contact lithography apparatus and a method use one or both of spacers and a mesa to facilitate pattern transfer. The apparatus and the method include one or both of a spacer that provides a spaced apart orientation of lithographic elements, such as a patterning tool and a substrate, when... Agent: Hewlett Packard Company

20080087637 - Line end shortening reduction during etch: A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with at least one photoresist line having a pair of sidewalls ending at a line end. A coating is placed over the photoresist line comprising at least one cycle... Agent: Beyer Weaver LLP

20080087638 - Selective-redeposition sources for calibrating a plasma process: Calibration wafers and methods for calibrating a plasma process performed in a plasma processing apparatus, such as an ionized physical vapor deposition apparatus. The calibration wafer includes one or more selective-redeposition sources that may be used for calibrating a plasma process. The selective-redeposition sources are constructed to promote the redeposition... Agent: Wood, Herron & Evans, LLP (tokyo Electron)

20080087645 - Regeneration method of etching solution, an etching method and an etching system: The present invention provides a regeneration process of the etching solution for the silicon nitride film, applying phosphoric acid aqueous solution, wherein multiple numbers of filters are connected to the piping path of etching solution extracted from the etching tank by switching alternately in parallel or in series; in both... Agent: Kubovcik & Kubovcik

20080087629 - Method for manufacturing semiconductor device: The present invention provides a method by which a thin film process can be conducted simply and accurately without using resist. Further, the present invention provides a method of manufacturing semiconductor devices at low cost. A first layer is formed over a substrate, a peeling layer is formed over the... Agent: Cook, Alex, Mcfarron, Manzo Cummings & Mehler, Ltd.

20080087634 - Manufacturing method of semiconductor device: A manufacturing method of a semiconductor device includes forming a metal mask on a substrate or on a layer provided on the substrate, and removing at least one of the substrate and the layer provided on the substrate selectively through a dry etching treatment with use of the metal mask.... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20080087639 - Line end shortening reduction during etch: A method for etching features in an etch layer is provided. A patterned photoresist mask is provided over the etch layer, the photoresist mask having at least one photoresist line having a pair of sidewalls ending at a line end is provided. A polymer layer is placed over the at... Agent: Beyer Weaver LLP

20080087640 - Laser processing apparatus: The present invention provides a laser processing apparatus having a laser oscillator for outputting a pulsed laser beam; deflection unit for deflecting the pulsed laser beam to irradiate a object to be processed with the deflected pulsed laser beam; a mounting base on which the object is placed and which... Agent: Eric Robinson

20080087641 - Components for a plasma processing apparatus: Components for a plasma processing apparatus are provided, including fastener members adapted to accommodate the stresses generated during thermal cycling. The fasteners include deflectable spacers to accommodate forces generated by the difference in thermal expansion while minimizing generation of additional particulate contamination.... Agent: Buchanan, Ingersoll & Rooney PC

20080087642 - Method for removing surface deposits in the interior of a chemical vapor deposition reactor: Disclosed is a deposition apparatus assembly comprising a deposition chamber, a remote chamber outside the deposition chamber for producing a reactive species from a precursor gas mixture, an activation source adapted to deliver energy into said remote chamber, a conduit for flowing the reactive species from said remote chamber to... Agent: E I Du Pont De Nemours And Company Legal Patent Records Center

20080087643 - Method and device for characterizing wafers during the production of solar cells: The invention relates to a method for characterizing wafers during the production of solar cells, comprising the steps: a) providing a wafer and carrying out a production process with the wafer for producing a solar cell or a plurality of solar cells; b) carrying out a wet chemical step with... Agent: Workman Nydegger

20080087644 - Polishing composition and polishing method: The present invention aims to provide a polishing composition which allows high-speed polishing of a barrier film and an inter-layer dielectric film along with a wiring metal at the same time, while preventing dishing and erosion, and particularly maintaining the flatness of metal film. The chemical-mechanical polishing composition of the... Agent: Sughrue Mion, PLLC

20080087646 - Method for manufacturing carbon nanotube composite material: A method for manufacturing the carbon nanotube composite material includes the steps of: providing a substrate and forming a carbon nanotube array in a selective pattern thereon; providing a pair of protective layers, a respective protective layer being attached on a corresponding portion of ends of CNTs; filling clearances existing... Agent: PCe Industry, Inc. Att. Cheng-ju Chiang Jeffrey T. Knapp

20080083699 - Method of producing a reflecting surface inside a substrate: The present invention provides a system and method for producing a groove with a required shape in a substrate, wherein the groove has at least one facet for folding a beam of light. The system includes a drilling laser beam for producing the groove, the laser beam passable through an... Agent: Pearl Cohen Zedek Latzer, LLP

20080083700 - Method and apparatus for maximizing cooling for wafer processing: Methods for processing wafers, wafer processing apparatus, micro-fluid ejection head substrates, and etching process are provided. One such method includes applying a clamping voltage to an electrostatic chuck sufficient to hold a wafer in a substantially planerized orientation adjacent to the electrostatic chuck. A heat transfer fluid flows through a... Agent: Lexmark International, Inc. Intellectual Property Law Department

20080083702 - Method for manufacturing an electron emitting device and method for manufacturing an electron tube: A method for manufacturing an electron emitting device includes disposing a cathode substrate and an anode substrate to be faced to each other in a depressurized atmosphere containing an activation gas, the cathode substrate including a carbon layer formed by applying a paste having a fibrous carbon and carbon impurities... Agent: Bacon & Thomas, Pllc

20080083701 - Oxygen conditioning of plasma vessels: Methods and apparatus for operating plasmas are described. The vessel receives an oxygen containing plasma to clean and/or condition the vessel.... Agent: Proskauer Rose LLP

20080083697 - Porous silicon composite structure as large filtration array: A novel asymmetric filter membrane, and process for making is disclosed in several exemplary versions. The membrane structure is physically robust and suitable for use in a wide variety of applications. The support membrane is may be comprised of material such as a porous silicon or a silicon oxide, and... Agent: David Aker

20080083698 - Method for forming fine wiring: The present invention relates to a method for forming fine wiring comprising: preparing a substrate for a printed circuit board; forming a metal thin sacrificial layer on the substrate using a first metal ink; forming a wiring on the metal thin sacrificial layer by inkjet printing using a second metal... Agent: Mcdermott Will & Emery LLP

20080083703 - Method of plasma processing: Plasma processing apparatus and plasma processing methods capable of maintaining etching characteristics and to prevent degradation of a lower electrode even when the focus ring is severely eroded by the plasma are disclosed. According to an exemplary embodiment, a side-surface protecting ring formed of a ceramic material having an erosion... Agent: Oliff & Berridge, Plc

20080078738 - Arc layer having a reduced flaking tendency and a method of manufacturing the same: By incorporating a material exhibiting a high adhesion on chamber walls of a process chamber during sputter etching, the defect rate in a patterning sequence on the basis of an ARC layer may be significantly reduced, since the adhesion material may be reliably exposed during a sputter preclean process. The... Agent: Williams, Morgan & Amerson

20080078739 - Method for manufacturing magnetic recording medium: A method for manufacturing a magnetic recording medium with excellent production efficiency is provided in which the recording layer can be processed into a desired concavo-convex pattern with high precision and the resin layer can reliably and thoroughly be removed. A sub-mask layer having corrosion resistance against an oxygen-containing gas... Agent: Oliff & Berridge, PLC

20080078741 - Method for manufacturing optical element: Forming a resist pattern on a substrate by patterning a resist layer using a photomask. The photomask comprises a mask substrate and a plurality of mask cells arranged in matrix form and in close contact with each other. Each of the mask cells has one or both of a light... Agent: Rabin & Berdo, PC

20080078742 - Method of preparing a sample for transmission electron microscopy: A method for preparing TEM sample, comprising the following steps: providing a sample with two pits and a failure region between the two pits, the failure region comprising a semiconductor device; milling the first surface of the failure region, till the cross section of the semiconductor device is exposed; etching... Agent: Squire, Sanders & Dempsey L.L.P.

20080078743 - Elevated temperature chemical oxide removal module and process: A temperature-controlled substrate holder having a high temperature substrate chuck is mounted within a chemical treatment chamber. The temperature-controlled substrate holder secures a substrate and maintains the substrate at a temperature that ranges from about 10° C. up to about 150° C. during execution of a chemical oxide removal process.... Agent: Hoffman, Warnick & D'alessandro LLC

20080078744 - High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation: A vacuum chamber for passivation and/or stripping a photoresist layer formed on a semiconductor substrate. The chamber includes an internal chamber body that forms a cavity to surround the substrate and has a plurality of gas passages extending therethrough to the cavity and one or more heaters to heat the... Agent: Buchanan, Ingersoll & Rooney PC

20080078745 - Rf coil plasma generation: Methods of operating a plasma chamber for use with an electron or ion beam apparatus. The method may comprise igniting a plasma in the plasma chamber by utilizing a first radio frequency (RF) power and a first plasma chamber pressure. The plasma may then be maintained by utilizing a second... Agent: Haynes And Boone, LLP

20080078740 - Method of manufacturing an ink-jet recording head: An ink-jet recording head has a plate-shaped member including a first layer with a partition wall formed by a first etching process and defining a pressure chamber, an ink inlet passage and a common ink storage chamber, a second layer with a land formed by a second etching process so... Agent: Sughrue Mion, PLLC

20080078746 - Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium: The present invention is to provide a technique for uniformly processing a substrate surface in the process of processing a substrate by supplying a gas. The inside of a shower head having gas-jetting pores for supplying a gas to a substrate is partitioned into a center section from which a... Agent: Smith, Gambrell & Russell

20080078747 - Fluorinated sulfonamide surfactants for aqueous cleaning solutions: Described are anionic N-substituted fluorinated sulfonamide surfactants, and use thereof in cleaning and in acid etch solutions. The cleaning and etch solutions are used with a wide variety of substrates, for example, in the cleaning and etching of silicon oxide-containing substrates.... Agent: 3m Innovative Properties Company