Etching a substrate: processes inventions 02/08

20080047927 - Method for forming bump of probe card: A method for forming a bump of a probe card is disclosed. In accordance with the method, a bump having a high aspect ratio for supporting a probe tip and a probe beam is formed using a semiconductor substrate as a mold eliminating a need for a photoresist film.... Agent: Sughrue Mion, PLLC

20080047928 - Method of producing a slab type two-dimensional photonic crystal structure: A first main face 1a of a substrate 1 of a dielectric single crystal is etched to form recesses 4 in the substrate 1. A second main face 1b of the substrate 1 is mechanically processed to form a slab 10, so that the recesses 4 pass through the substrate... Agent: Burr & Brown

20080047930 - Method to form a pattern of functional material on a substrate: The invention provides a method to form a pattern of a functional material on a substrate for use in electronic devices and components. The method uses a stamp having a relief structure to transfer a mask material to a substrate and form a pattern of open area on the substrate.... Agent: E I Du Pont De Nemours And Company Legal Patent Records Center

20080047932 - Production process of structure: A process for producing a structure containing silicon oxide includes a step of forming a first layer of organic spin-on glass on a substrate and a step of forming a second layer of inorganic spin-on glass on the first layer. Thereafter, the first layer is etched by using a pattern... Agent: Fitzpatrick Cella Harper & Scinto

20080047933 - Method for machining a material with high-power density electromagnetic radiation: The invention relates to a method for machining a material with high-power density electromagnetic radiation. The radiation has its wavelength selected material-specifically, such that the radiation penetrates inside the material without substantial surface absorption. The radiation is focused on a spot inside the material and/or in the proximity of a... Agent: Joel D. Skinner, Jr. Skinner And Associates

20080047926 - Method for making microchip reservoir device: Methods are provide for fabricating a microchip device having containment reservoirs. In one embodiment, the method includes providing a substrate; forming a plurality of reservoirs in the substrate, each reservoir having an opening in a surface of the substrate; fabricating a plurality of metal reservoir caps, each of which closes... Agent: Sutherland Asbill & Brennan LLP

20080047929 - Method for fabricating micro and nano structures: A method of forming an array of selectively shaped optical elements on a substrate, the method including the steps of providing the substrate, the substrate having an optical layer placed thereon; placing a layer of particles on the optical layer; performing an etching cycle. The cycle includes the steps of:... Agent: Heslin Rothenberg Farley & Mesiti PC

20080047931 - In-situ oxidized textured surface for prosthetic devices: A textured surface and oxidation layer coating on a metallic material is accomplished through the chemical and/or electrochemical etching of the surface to modify the surface texture and an in-situ oxidation procedure. The surface is useful for the fabrication of prosthetic devices, particularly medical implants, due to the corrosion and... Agent: Smith & Nephew, Inc.

20080047934 - Silicon wafer etching method and apparatus, and impurity analysis method: A wafer etching and impurity analysis method is presented in which a wafer is held in a vessel having gas introduction and exhaust ports, a solution including a mixture of hydrofluoric acid and nitric acid alone or together with sulfuric acid is bubbled with a carrier gas without being heated,... Agent: Darby & Darby P.C.

20080041813 - Methods and compositions for wet etching: A composition comprising an aqueous solution of: a wet-etch formulation that is proven to etch copper; and a wetting agent. Exemplary wet-etch formulations include a mixture of a strong inorganic acid, such as sulfuric acid or hydrofluoric acid, and an oxidizing agent such as hydrogen peroxide, and further include ammonium... Agent: Fish & Richardson P.C.

20080041816 - Systems and methods for manufacturing wire grid polarizers: Systems and methods for manufacturing wire grid polarizers include a deposition unit for forming a thin metal film layer on a substrate, a coating unit for applying a photoresist on the thin metal film layer and for baking the photoresist, a stamping unit, including a stamp having a pattern formed... Agent: Macpherson Kwok Chen & Heid LLP

20080041818 - Method for pattern formation: There is provided a method for pattern formation, including a step of coating a composition comprising a block copolymer, a silicon compound, and a solvent for dissolving these components onto an object to form a layer of the composition on the object, a step of subjecting the layer of the... Agent: Nixon & Vanderhye, PC

20080041819 - Methods of cleaning processing chamber in semiconductor device fabrication equipment: Methods of cleaning a processing chamber of semiconductor device fabrication equipment are highly effective in removing polymers produced as a by-product of a fabrication process from surfaces in a processing chamber. The cleaning process uses a plasma etchant produced from cleaning gas including an O-based gas and at least one... Agent: Volentine & Whitt PLLC

20080041822 - Substrate having blind hole and method for forming blind hole: The present invention relates to a substrate having a blind hole and a method for forming the blind hole. The method for forming the blind hole in the substrate includes: (a) providing a substrate having a lower dielectric layer, a copper layer, and an upper dielectric layer; and (b) forming... Agent: Volentine & Whitt PLLC

20080041823 - Wet etching solution: A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the etching solution, the inorganic acid being one or more of nitric acid,... Agent: Lee & Morse, P.C.

20080041815 - Spin-on protective coatings for wet-etch processing of microelectronic substrates: New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The... Agent: Hovey Williams LLP

20080041814 - Systems and methods for harvesting and integrating nanowires: The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into... Agent: Nanosys Inc.

20080041817 - Structure of a micro electro mechanical system and the manufacturing method thereof: A structure of a micro electro mechanical system and a manufacturing method are provided, the structure and manufacturing method is adapted for an optical interference display cell. The structure of the optical interference display cell includes a first electrode, a second electrode and posts. The second electrode comprises a conductive... Agent: Knobbe, Martens, Olson & Bear, LLP

20080041820 - Apparatus for reducing polymer deposition on a substrate and substrate support: An adjustable RF coupling ring is capable of reducing a vertical gap between a substrate and a hot edge ring in a vacuum processing chamber. The reduction of the gap reduces polymer deposits on the substrate and electrostatic chuck and improves wafer processing.... Agent: Buchanan, Ingersoll & Rooney PC

20080041821 - Gas distribution system for improved transient phase deposition: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface... Agent: Townsend And Townsend And Crew LLP / Amat

20080041824 - Microetching composition and method of using the same: The present invention is directed to a microetching composition comprising a source of cupric ions, acid, a nitrile compound, and a source of halide ions. Other additive, including organic solvents, a source of molybdenum ions, amines, polyamines, and acrylamides may also be included in the composition of the invention. The... Agent: John L. Cordani Carmody & Torrance LLP

20080035603 - Apparatus for spraying etchant and use method thereof: The present invention relates to an apparatus for spraying an etchant and a method for manufacturing a printed circuit board. In one exemplary embodiment the apparatus includes a manifold, a plurality of feed pipes in fluid communication with the manifold, each of the feed pipes having a plurality of spray... Agent: PCe Industry, Inc. Att. Cheng-ju Chiang Jeffrey T. Knapp

20080035605 - Exhaust assembly for plasma processing system and method: An exhaust assembly is described for use in a plasma processing system, whereby secondary plasma is formed in the exhaust assembly between the processing space and chamber exhaust ports in order to reduce plasma leakage to a vacuum pumping system, or improve the uniformity of the processing plasma, or both.... Agent: Wood, Herron & Evans, LLP (tokyo Electron)

20080035606 - Method to minimize cd etch bias: The present invention provides a method for improving the critical dimension performance during a plasma etching process of a photolithographic substrate having a thin film. A passivation film is deposited onto the photolithographic substrate using a first set of process conditions. The deposited film is etched from the photolithographic substrate... Agent: Harvey S. Kauget Phelps Dunbar, LLP

20080035610 - Substrate processing apparatus and substrate processing method: The substrate processing apparatus includes a first etching mode and a second etching mode. In the first etching mode, a first nozzle is positioned at a first processing position and a chemical solution is supplied from the first nozzle to a top rim portion of the rotating substrate. In the... Agent: Ostrolenk Faber Gerb & Soffen

20080035609 - System and method for selective etching of silicon nitride during substrate processing: A system (FIG. 5) and methods for selectively etching silicon nitride in the presence of silicon oxide that provide high selectivity while stabilizing silicon oxide etch rates. The invention comprises a processing chamber (10), dispense lines (20, 21, 22), feed lines (30, 31, 32), a recirculation line (40), a process... Agent: Wolf, Block, Schorr & Solis-cohen LLP

20080035604 - Method for forming on-chip lens including process of forming depression by using etch-back method, and method for manufacturing solid-state imaging apparatus including process of forming in-layer micro lens using the method for forming on-chip lens: In a method for forming a lens according to the present invention, a digging step of digging a depression includes a depositing substep of depositing a pattern film on a surface of a base film, the pattern film being made of a second material and in an inverted shape of... Agent: Mcdermott Will & Emery LLP

20080035607 - Method and apparatus for the etching of microstructures: An apparatus and method for providing an etching gas source for etching one or more microstructures located within a process chamber. the apparatus has a gas source supply line attached to a gas source and one or more chambers for containing an etching material. In use, the etching material is... Agent: Sughrue Mion, PLLC

20080035608 - Surface processing apparatus: A surface processing apparatus is provided for use in the surface processing of a substrate. The surface processing apparatus comprises a plasma source and processing chamber in which a substrate is mounted in use. The processing chamber is operatively connected to the plasma source and the surface processing apparatus is... Agent: Blank Rome LLP

20080029476 - Circuit board and manufacturing method thereof: A circuit board having high adhessiveness contact between electrically insulating layers and having a low interlayer electric resistance is provided. A circuit board is provided with a first conductive layer formed on a core (1) and a first electrically insulating layer formed thereon. In the circuit board, a first conductor... Agent: Birch Stewart Kolasch & Birch

20080029479 - Method for manufacturing probe structure: A method for manufacturing a probe structure is wherein a disclosed. In accordance with method, two semiconductor substrates having different crystal directions are bonded and selectively etched utilizing an etch selectivity due to the different crystal directions to form a probe tip region and a probe beam region. A cantilever... Agent: Sughrue Mion, PLLC

20080029480 - Armor for an electronically scanned array: According to an embodiment of the present invention, an electronically scanned array includes a plurality of armor segments interspersed between a plurality of transmit/receive integrated microwave modules (TRIMMs), and a clamping element compressing the armor segments.... Agent: Baker Botts LLP

20080029482 - Method and apparatus for selectable energy storage partitioned capacitor: One embodiment of the present subject matter includes a method for pulse generation in an implantable device, comprising measuring an impedance between a first electrode and a second electrode and delivering a pulse based on a pulse energy level and a pulse duration limit, comprising generating a pulse duration as... Agent: Schwegman, Lundberg & Woessner, P.A.

20080029483 - Method of treating a mask layer prior to performing an etching process: A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as line edge roughness... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20080029481 - Methods for reducing surface charges during the manufacture of microelectromechanical systems devices: Provided herein are methods for preventing the formation and accumulation of surface-associated charges, and deleterious effects associated therewith, during the manufacture of a MEMS device. In some embodiments, methods provided herein comprise etching a sacrificial material in the presence of an ionized gas, wherein the ionized gas neutralizes charged species... Agent: Knobbe Martens Olson & Bear LLP

20080029484 - In-situ process diagnostics of in-film aluminum during plasma deposition: The concentration of various contaminants in a plasma can be monitored during processing of a substrate such as a silicon wafer, in order to prevent an unacceptable amount of contamination from being deposited on the substrate. The radiation emitted from the plasma through a window in the processing chamber during... Agent: Townsend And Townsend And Crew LLP / Amat

20080029477 - Method for producing an integrated circuit including a fuse element, a fuse-memory element or a resistor element: A method for producing an integrated circuit including a fuse element, a fuse-memory element or a resistor element is disclosed. In one embodiment, at least one metallization layer is applied onto a substrate. A hard mask is applied onto the at least one metallization layer. The at least one metallization... Agent: Dicke, Billig & Czaja

20080029478 - Chemical mechanical polishing process for forming shallow trench isolation structure: A shallow trench isolation (STI) multistage chemical mechanical polishing (CMP) method for forming a shallow trench isolation structure is provided. The substrate comprising a dense region and an isolation region, a silicon nitride layer formed over the substrate, a plurality of trenches formed in the silicon nitride layer and the... Agent: J C Patents, Inc.

20080029485 - Systems and methods for precision plasma processing: A tool for modifying a surface of a workpiece comprises a heat source having a modifiable footprint for heating a selectable portion of the surface, a reactive atom plasma torch, and a reactive precursor receivable within a plasma of the reactive atom plasma torch. The reactive cursor is received by... Agent: Fliesler Meyer LLP

20080029486 - Light collimating and diffusing film and system for making the film: A light collimating and diffusing film and a method for making the film are provided. The film includes a plastic layer having a first side and a second side opposite the first side and at least a first peripheral edge. The first side has a first textured surface, wherein between... Agent: Cantor Colburn, LLP

20080029487 - Fine treatment agent and fine treatment method using same: A fine treatment agent according to the present invention is a fine treatment agent for the fine treatment of a multilayer film, including a tungsten film and a silicon oxide film comprising at least one from among hydrogen fluoride, nitric acid, ammonium fluoride and ammonium chloride. Thus, a fine treatment... Agent: Knobbe Martens Olson & Bear LLP