Etching a substrate: processes inventions 11/07

20070272654 - Method for manufacturing circuit board: A method for manufacturing a circuit board is described. A core layer of substrate comprising an insulating layer, at least one through hole and a first copper layer including a face copper and a hole copper is provided. A first photo-resist layer is formed on the face copper and defines... Agent: Thomas, Kayden, Horstemeyer & Risley, LLP

20070272656 - Method for forming contact hole on semiconductor device: A method of forming a relatively fine contact hole using two masks. The two masks may have only their edge portions open, which may overlap each other.... Agent: Sherr & Nourse, PLLC

20070272653 - Method for orientation treatment of electronic functional material and thin film transistor: A method of orienting an electronic functional material which comprises: a mixed material preparation step (Step S1) of preparing a mixed material from an electronic functional material and a matrix material used for orientating the electronic functional material; an orientation step (Step S2) of orientating the mixed material; and a... Agent: Mcdermott Will & Emery LLP

20070272655 - Barrier metal film production method: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal... Agent: Birch Stewart Kolasch & Birch

20070272657 - Apparatus and method for single substrate processing: In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch... Agent: Patterson & Sheridan, LLP

20070267385 - Semiconductor probe with high resolution resistive tip and method of fabricating the same: A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to... Agent: Sughrue Mion, PLLC

20070267386 - Post chemical mechanical polishing etch for improved time dependent dielectric breakdown reliability: Disclosed are a damascene and dual damascene processes both of which incorporate the use of a release layer to remove trace amounts of residual material between metal interconnect lines. The release layer is deposited onto a dielectric layer. The release layer comprises an organic material, a dielectric material, a metal... Agent: Frederick W. Gibb, Iii Gibb & Rahman, LLC

20070267387 - Processing method of silicon wafer: The processing method of a silicon wafer of the present invention includes an etching process (13) in which acid etching solution and alkali etching solution are stored in plural etching tanks, respectively and a wafer having degraded superficial layers gone through a cleaning process (12) subsequent to a lapping process... Agent: Reed Smith, LLP Attn: Patent Records Department

20070262049 - Imprinting method and nano-imprinting apparatus: An imprinting method carries out imprinting on a workpiece by clamping UV-curable resin between a nano-imprinting mold and a workpiece and curing the UV-curable resin using UV light. In this method, the workpiece is supported on a setting table provided with through-holes that are disposed in a planar region of... Agent: Birch Stewart Kolasch & Birch

20070262052 - Film removal method and apparatus: A film removal method and apparatus for removing a film from a substrate are disclosed. The method comprises the steps of disposing a plasma generator and a sucking apparatus over the substrate, projecting a plasma beam from the plasma generator onto the film obliquely, disposing the sucking apparatus on a... Agent: Rabin & Berdo, PC

20070262048 - Highly selective doped oxide etchant: Etch solutions for selectively etching doped oxide materials in the presence of silicon nitride, titanium nitride, and silicon materials, and methods utilizing the etch solutions, for example, in the construction of container capacitor constructions are provided. The etch solutions are formulated as a mixture of hydrofluoric acid and an organic... Agent: Whyte Hirschboeck Dudek S.c.

20070262050 - Patterning by energetically-stimulated local removal of solid-condensed-gas layers and solid state chemical reactions produced with such layers: The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energy at the selected regions.... Agent: Theresa A. Lober T.a. Lober Patent Services

20070262051 - Method of plasma etching with pattern mask: The present invention provides a method of plasma etching with pattern mask. There are two different devices in the two section of a wafer, comprising silicon and Gallium Arsenide (GaAs). The Silicon section is for general semiconductor. And the GaAs section is for RF device. The material of pad in... Agent: Kusner & Jaffe Highland Place Suite 310

20070257006 - Method for dry etching fluid feed slots in a silicon substrate: A method of micro-machining a semiconductor substrate to form one or more through slots therein. The semiconductor substrate has a device side and a fluid side opposite the device side. The method includes diffusing a p-type doping material into the device side of the semiconductor substrate in one or more... Agent: Lexmark International, Inc. Intellectual Property Law Department

20070257007 - Bubble-ink jet print head and fabrication method thereof: A bubble-ink jet print head includes: a substrate having ink chambers to store ink and resistance heat emitting bodies to heat ink disposed thereover; and an ink supply passage which penetrates the substrate and which is connected with the ink chambers. The ink supply passage includes: a first trench formed... Agent: Staas & Halsey LLP

20070257009 - Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator: A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source... Agent: Robert M. Wallace Law Office Of Robert M. Wallace

20070257008 - Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another: A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source... Agent: Robert M. Wallace Law Office Of Robert M. Wallace

20070257011 - Advanced process control for low variation treatment in immersion processing: The variability of immersion processes for treatment of semiconductor devices can be significantly lowered by initiating the termination of a treatment process according to a predetermined treatment termination protocol in a manner that takes into account the contribution of, in particular, the treatment that is carried out during the period... Agent: Kagan Binder, PLLC

20070257010 - Method and composition for selectively stripping nickel from a substrate: A method of stripping nickel from a printed wiring board comprises providing a printed wiring board with a nickel deposit on a surface and contacting the nickel deposit with phosphate ions and an oxidizer. An aqueous solution comprises ammonium ions, phosphate ions and an oxidizing agent present in amounts effective... Agent: Mcandrews Held & Malloy, Ltd

20070251914 - Glass thinning equipment and manufacturing method: Electrodes 11 are formed on one of a pair of glass substrates 1 and the glass substrates 1 are laminated via a sealing material 12. Thereafter, an external surface thinning process which reduces the thickness of external surfaces of the glass substrates 1 is performed. During said thinning process, an... Agent: Bacon & Thomas, PLLC

20070251915 - Optical device and method for manufacturing the same: A method of manufacturing an optical device includes: a first step of forming an optical-device forming body that includes a plurality of columnar structures arranged in an arrangement direction on a substrate surface via a trench and an outline structure connected to and containing therein the plurality of columnar structures;... Agent: Posz Law Group, PLC

20070251916 - Projector, screen, projector system, and scintillation removing apparatus: A projector includes a light diffusing unit that is vibratably provided to diffuse incident light by a vibration and to emit diffused light, the light diffusing unit having a unique resonance frequency, a vibration generating unit that has a piezoelectric element for vibrating the light diffusing unit, and a control... Agent: Oliff & Berridge, PLC

20070251919 - Etching apparatus and etching method for substrate bevel: In the bevel etching apparatus relating to the present invention, a substrate is inserted between electrically connected electrodes. A high-frequency power source is connected to the electrodes, and ground potential is applied to a support unit that supports the substrate. Gas (atmosphere) is supplied to the gap between the electrodes... Agent: Mcdermott Will & Emery LLP

20070251917 - Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content: A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through an annular zone of gas injection orifices... Agent: Robert M. Wallace Law Office Of Robert M. Wallace

20070251918 - Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation: A plasma etch process for etching a workpiece is carried out in a plasma reactor having a ceiling electrode overlying the process region with plural concentric gas injection zones. The process includes injecting process gases with different compositions of chemical species through different ones of the gas injection zones to... Agent: Robert M. Wallace Law Office Of Robert M. Wallace

20070251920 - Method of operating a plasma reactor having an overhead electrode with a fixed impedance match element: A method is provided for processing a workpiece in a plasma reactor chamber having a ceiling electrode and a workpiece support pedestal within the chamber facing the ceiling electrode and supporting the workpiece. The method includes providing a fixed impedance match element between a generator of VHF plasma source power... Agent: Law Office Of Robert M. Wallace

20070251922 - Automatic gain control: Methods and apparatus for automatic gain control. A film on a substrate is polished by a chemical mechanical polisher that includes a polishing pad and an in-situ monitoring system. The polishing pad includes a first portion, and the in-situ monitoring system includes a light source and a light detector. The... Agent: Fish & Richardson P.C.

20070251921 - Method and system to measure flow velocity and volume: Systems, devices and methods of measuring a flow of a liquid stream for a semiconductor process are provided. The liquid stream is delivered through a liquid delivery nozzle. The nozzle is adapted to deliver the liquid stream for the semiconductor process. The free stream extends from an upstream location near... Agent: Townsend And Townsend And Crew, LLP