Etching a substrate: processes inventions 10/07

20070246439 - Gap filling method, method for forming semiconductor memory device using the same, and semiconductor device having a filled gap: A gap filling method and a method for forming a memory device, including forming an insulating layer on a substrate, forming a gap region in the insulating layer, and repeatedly forming a phase change material layer and etching the phase change material layer to form a phase change material layer... Agent: Lee & Morse, P.C.

20070246441 - Resist composition, method for forming resist pattern using the same, array substrate fabricated using the same and method of fabricating the array substrate: A resist composition used for the imprint lithography process, a method for forming resist pattern using the same, an array substrate manufactured using the same, and method of fabricating the array substrate includes an additive and the adhesion promoter inducing the chemical bond of the base layer contacting to the... Agent: Mckenna Long & Aldridge LLP Song K. Jung

20070246440 - Semiconductor memory device and manufacturing method thereof: A semiconductor memory device is provided in which a phase-change layer can be formed stably and electric current required to cause the phase change of the phase-change layer can be reduced. An edge portion of the phase-change layer is formed above a lower electrode. The edge portion is formed to... Agent: Mcginn Intellectual Property Law Group, PLLC

20070246442 - Chemical oxide removal of plasma damaged sicoh low k dielectrics: A method for removing damages of a dual damascene structure after plasma etching is disclosed. The method comprises the use of sublimation processes to deposit reactive material onto the damaged regions and conditions to achieve a controlled removal of the damaged region. Furthermore a semiconductor structure comprising a dual damascene... Agent: Greenblum & Bernstein, P.L.C

20070246443 - Process using combined capacitively and inductively coupled plasma process for controlling plasma ion dissociation: A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the... Agent: Robert M. Wallace Law Office Of Robert M. Wallace

20070241076 - Staggered vertical comb drive fabrication method: The invention relates to a method of fabrication of staggered vertical comb drive actuators with relaxed lateral alignment tolerances. A device layer of a wafer is first etched from a front side using a self-aligned two-layer mask to define interdigited fingers of both moving and stationary combs. A second etch... Agent: Teitelbaum & Maclean

20070241077 - Process for producing aluminum electrode foil for capacitor and aluminum foil for etching: A process for producing an aluminum electrode foil for a capacitor, which includes a first step of preparing an emulsion from a mixture including a first phase of a liquid resin or a resin solution obtained by dissolving a resin in a solvent, a second phase of a liquid that... Agent: Wenderoth, Lind & Ponack L.L.P.

20070241078 - Methods for releasably attaching support members to microfeature workpieces: Methods and apparatuses for releasably attaching support members to microfeature workpieces to support members are disclosed herein. In one embodiment, for example, a method for processing a microfeature workpiece including a plurality of microelectronic dies comprises forming discrete blocks of material at a first side of a support member. The... Agent: Perkins Coie LLP Patent-sea

20070235407 - Method of fabricating a diaphragm of a capacitive microphone device: A method of fabricating a diaphragm of a capacitive microphone device is provided. First, a substrate is provided, and a dielectric layer is formed on a first surface of the substrate. Than, a plurality of silicon spacers are formed on a surface of the dielectric layer, and the dielectric layer... Agent: North America Intellectual Property Corporation

20070235408 - Method of making tapered capillary tips with constant inner diameters: Methods of forming electrospray ionization emitter tips are disclosed herein. In one embodiment, an end portion of a capillary tube can be immersed into an etchant, wherein the etchant forms a concave meniscus on the outer surface of the capillary. Variable etching rates in the meniscus can cause an external... Agent: Battelle Memorial Institute Attn:IPServices, K1-53

20070235409 - Methods for substrate processing in cluster tool configurations having meniscus application systems: Method for processing a substrate are provided. The processing occurs when the substrate is moved between cluster tools. One method includes providing the substrate to a cluster tool, and the cluster tool is configured to move the substrate into a meniscus processing module having at least one proximity head. The... Agent: Martine Penilla & Gencarella, LLP

20070235410 - Method of forming a darkfield etch mask: Susceptibility of darkfield etch masks (majority of the mask area is opaque) to pinhole defects, transferred pattern, non-uniformity, etc. due to ejector dropout or drop misdirection, and long duty cycles due to large-area coverage, when using digital lithography (or print patterning) is addressed by using a clear-field print pattern that... Agent: Jonathan A. Small JasIPConsulting

20070235411 - Method for removing damaged dielectric material: A method for removing a damaged dielectric material following an etch process, an ashing process, or a wet cleaning process is described. A dry, non-plasma removal process is implemented to remove a thin layer of damaged material on a feature following formation of the feature. The dry, non-plasma removal process... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070235412 - Segmented radio frequency electrode apparatus and method for uniformity control: A segmented radio frequency (RF) powered electrode for use in plasma processing. The electrode includes a first electrode, a second electrode surrounding the first electrode, and a dielectric material interposed between the first electrode and the second electrode. The dielectric material electrically isolates the first electrode from the second electrode.... Agent: Buchanan, Ingersoll & Rooney PC

20070235413 - Method of forming si tip by single etching process and its application for forming floating gate: The invention provides a method of forming a silicon tip by a single etching process, as well as a method of forming a tip floating gate to increase erase speed. Etching gases comprising (1) chlorine and/or (2) oxygen/helium are performed to form a silicon tip without bottom dimple. The invention... Agent: Birch Stewart Kolasch & Birch

20070235414 - Laser markable polymers: A polymer composition that is suitable for marking by laser radiation. The composition comprises a foaming agent that is present in a quantity that is not sufficient to induce bulk foamability in the polymer, but enhances the contrast available in the marking process compared to compositions that do not comprise... Agent: Laurence T. Pearson

20070228004 - Device and method for the treatment of wafers: A device and a method is provided for irradiating wafers with low-intensity UV light to prevent blistering during the subsequent photostabilization of the photoresist.... Agent: Mcgrath, Geissler, Olds & Richardson, PLLC

20070228006 - Plasma etching method: A plasma etching method includes the step of etching a lower organic material film by using an upper organic material film and an intermediate layer as a mask in a processing chamber of a plasma etching apparatus, while using an etching gas made up of a gaseous mixture including an... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070228007 - Method of decorating a ceramic part: p

20070228009 - Plasma processing apparatus and method: In a plasma processing apparatus in which a radio-frequency power from a radio-frequency power source is supplied to at least one of an upper electrode and a lower electrode disposed to vertically face each other in a process vessel, to thereby generate, in the process vessel, plasma with which a... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070228002 - Simultaneous selective polymer deposition and etch pitch doubling for sub 50nm line/space patterning: First radicals and second radicals are simultaneous deposited into a space defined by two adjacent lines of photoresists and an underlying layer. A portion of the first radicals and the second radicals combine to form a polymer layer on the layer in the center of the space, and substantially simultaneously,... Agent: Blakely Sokoloff Taylor & Zafman

20070228003 - Line end spacing measurement: A method including: providing collinear first and second lines in a mask layer over a substrate, the first line having at one end a first line end and having a first line body adjacent the first line end, and the second line having at one end a second line end... Agent: Haynes And Boone, LLP

20070228005 - Erasable ink, method of erasing image including the same, and method of recycling recording medium using the erasing method: The invention provides a method for easily and promptly erasing an image (including a character) formed on a printed article with a low cost, and an apparatus employing such method. A printed article bearing an image formed on a surface including an inorganic pigment is exposed to a reactive gas... Agent: Fitzpatrick Cella Harper & Scinto

20070228008 - Medium pressure plasma system for removal of surface layers without substrate loss: A system and method for removing photoresist or other organic compounds from semiconductor wafers is provided. Non-fluorinated reactant gases (O2, H2, H2O, N2 etc.) are activated in a quartz tube by a medium pressure surface wave discharge. As the plasma jet impinges on a substrate, volatile reaction products (H2O, CO2,... Agent: Robert C. Shaddox Winstead Sechrest & Minick P.C.

20070228011 - Novel chemical composition to reduce defects: A chemical composition and methods to remove defects while maintaining corrosion protection of conductors on a substrate are described. The composition includes a conductive solution, a corrosion inhibitor; and a surfactant. A surfactant-to-inhibitor ratio in the composition is a function of a metal. The surfactant is an anionic surfactant, a... Agent: Blakely Sokoloff Taylor & Zafman

20070228010 - Systems and methods for removing/containing wafer edge defects post liner deposition: A method removes and/or contains edge residue. A wafer comprised of a semiconductor material having a top surface, a bottom surface and an edge surface is provided. The bottom surface and the top surface are substantially planar and the edge surface is non-planar. Residue can be located on the edge... Agent: Texas Instruments Incorporated

20070228012 - Method for making a satin finish surface: The invention concerns a method of making a satin finish surface on a part made of a material with a Vickers hardness greater than 1000 HV including at least one polished surface, mainly including the following steps: taking a support for the part and a pulse laser, capable of a... Agent: Griffin & Szipl, PC