Etching a substrate: processes inventions 09/07

20070221617 - Method of manufacturing nozzle plate, liquid ejection head and image forming apparatus: The method of manufacturing a nozzle plate which includes a nozzle having a tapered section and a linear section includes the steps of: forming an etching stopper layer for stopping dry etching of a silicon substrate, on a first surface of the silicon substrate; forming a mask layer on a... Agent: Birch Stewart Kolasch & Birch

20070221621 - Apparatus for laser cutting and/or marking: The present invention relates to an apparatus for cutting and/or marking products by means of laser beams. The apparatus comprises at least one laser light emitter moveable in a first direction (X) along a cross-bar, the cross-bar being in turn moveable above a working plan in a second direction (Y)... Agent: Nixon & Vanderhye, PC

20070221623 - Plasma processing apparatus and method: There is provided a plasma processing apparatus in which a microwave is propagated into a dielectric body disposed at a top surface of a process chamber through a plurality of slots formed in a bottom face of a rectangular waveguide to excite a predetermined gas supplied into the process chamber... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070221609 - Method for purifying silicon carbide coated structures: Processes for the purification of silicon carbide structures, including silicon carbide coated silicon carbide structures, are disclosed. The processes described can reduce the amount of iron contamination in a silicon carbide structure by 100 to 1000 times. After purification, the silicon carbide structures are suitable for use in high temperature... Agent: Senniger Powers

20070221611 - Method of manufacturing fine features for thin film transistors: A process for fabricating fine features such as small gate electrodes on a transistor. The process involves the jet-printing of a mask and the plating of a metal to fabricate sub-pixel and standard pixel size features in one layer. Printing creates a small sub-pixel size gap mask for plating a... Agent: John S. Zanghi, Esq. Fay, Sharpe, Fagan, Minnich & Mckee, LLP

20070221610 - Method using monolayer etch masks in combination with printed masks: A method to pattern films into dimensions smaller than the printed pixel mask size. A printed mask is deposited on a thin film on a substrate. The second mask layer is selectively deposited onto the film, but not to the printed mask. A third mask is then printed onto the... Agent: John S. Zanghi, Esq. Fay, Sharpe, Fagan, Minnich & Mckee, LLP

20070221612 - Method of forming a conductive pattern: A method of forming a conductive pattern can form a conductive pattern where the aspect ratio of the height to the width is high with favorable electrical connectivity. The method includes a process that forms a first resist layer, which exposes formation positions of a conductive pattern, on a formation... Agent: Patrick G. Burns, Esq. Greer, Burns & Crain, Ltd.

20070221615 - Liquid supply method, liquid supply apparatus, substrate polishing apparatus, and method of measuring supply flow rate of liquid: A liquid supply apparatus is to supply a polishing liquid from a polishing supply source onto a polishing surface of a polishing table at a predetermined flow rate. The liquid supply apparatus according to the present invention includes at least one supply tube for retaining the liquid supplied from the... Agent: Wenderoth, Lind & Ponack, L.L.P.

20070221614 - Method to reduce stacking fault nucleation sites and reduce vf drift in bipolar devices: A method is disclosed for preparing a substrate and epilayer for reducing stacking fault nucleation and reducing forward voltage (Vf) drift in silicon carbide-based bipolar devices. The method includes the steps of etching the surface of a silicon carbide substrate with a nonselective etch to remove both surface and subsurface... Agent: Summa, Allan & Additon, P.A.

20070221613 - Structure for stopping mechanical cracks in a substrate wafer, use of the structure and a method for producing the structure: A structure for stopping mechanical cracks in a substrate wafer used for semiconductor device manufacturing, especially a silicon wafer, is described. The structure includes at least one depression that extends into the substrate wafer for at least 20% of the final thickness of the substrate wafer.... Agent: Slater & Matsil LLP

20070221616 - Etching method: The invention is directed to a method for etching a color filter. The method comprises steps of providing a substrate having a multilayered filter material layer formed thereon and then disposing the substrate into an etching chamber with introducing a gas mixture into the etching chamber for performing a dry... Agent: J.c. Patents, Inc.

20070221618 - Etching method: An etching apparatus is described, including an etching chamber, a gas pipe, a gas distribution plate and a heater. The gas pipe is disposed above the etching chamber for delivering a gas to the exterior surface of the etching chamber. The gas distribution plate is disposed at the outlet of... Agent: Jianq Chyun Intellectual Property Office

20070221619 - Etching method: Recessing a trench using feed forward data is disclosed. In one embodiment, a method includes providing a region on a wafer including a trench area that includes a trench and a field area that is free of any trench, and a material applied over the region so as to fill... Agent: Hoffman, Warnick & D'alessandro LLC

20070221620 - Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process: Processes for monitoring the levels of oxygen and/or nitrogen in a substantially oxygen and nitrogen-free plasma ashing process generally includes monitoring the plasma using optical emission. An effect produced by the low levels of oxygen and/or nitrogen species present on other species generally abundant in the plasma is monitored and... Agent: Cantor Colburn, LLP

20070221622 - Plasma chamber having plasma source coil and method for etching the wafer using the same: A plasma chamber having a plasma source coil includes a chamber body, a plasma source coil, and an edge bushing. The chamber body includes a reaction space, which is limited by a sidewall, a lower exterior wall, and an upper dome, and forms plasma. The plasma source coil arranged on... Agent: Christie, Parker & Hale, LLP

20070221624 - Electron emission device, method of manufacturing the electron emission device, and electron emission display using the electron emission device: An electron emission device including a first electrode, an electron emission region formed on the first electrode, and a second electrode disposed on the first electrode with an insulating layer interposed between the first and second electrodes. The insulating layer and the second electrode are provided with openings for exposing... Agent: Christie, Parker & Hale, LLP

20070215572 - Substrate processing method and substrate processing apparatus: A processing fluid is prepared by mixing purified water and methanol as a solvent with SCCO2, and the processing fluid is brought into contact with a surface of a substrate so as to form oxide film on the surface of the substrate. In this processing fluid, SCCO2 functions as a... Agent: Ostrolenk Faber Gerb & Soffen

20070215575 - Method and system for high-speed, precise, laser-based modification of one or more electrical elements: A method and system for high-speed, precise, laser-based modification of at least one electrical element made of a target material is provided. The system includes a laser subsystem that generates a pulsed laser output wherein each laser pulse has a pulse energy, a laser wavelength within a range of ablation... Agent: Brooks Kushman P.C.

20070215574 - Prediction method and apparatus for substrate processing apparatus: A prediction method for a substrate processing apparatus is to predict processing results from operation data on the substrate processing apparatus during a procedure for processing a target processing substrate in a processing chamber of the substrate processing apparatus. The method includes the steps of: collecting operation data obtained; and... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070215573 - Method for forming a resist pattern of magnetic device: A resist pattern for lift-off is formed on a first film composed of one or more layers deposited on a substrate. The first film is patterned by dry-etching using the resist pattern as a mask. Subsequently, a second film is deposited with presence of the resist pattern on the first... Agent: Oliff & Berridge, PLC

20070210029 - Process for producing microfluidic arrangements from a plate-shaped composite structure: A process for producing a multiplicity of microfluidic arrangements from a plate-shaped composite structure and an atomiser which is provided with such nozzle arrangements is proposed. Each arrangement has a groove structure which forms flow channels and the dimensions of which are in the micrometer range. The lines for optional... Agent: Roberts, Mlotkowski & Hobbes

20070210030 - Method of patterning conductive structure: A method of patterning a conductive structure includes providing a semiconductor substrate, forming a conductive layer on the semiconductor substrate, forming a hard mask layer on the conductive layer and forming a photo-resist layer on the hard mask layer. An isotropic etching is applied to remove a partial region of... Agent: Rosenberg, Klein & Lee

20070210031 - Features in substrates and methods of forming: The described embodiments relate to features in substrates and methods of forming same. One exemplary embodiment can be a microdevice that includes a substrate extending between a first substrate surface and a generally opposing second substrate surface, and at least one feature formed into the first surface along a bore... Agent: Hewlett Packard Company

20070210032 - Plasma processing apparatus and method for controlling the same: A method for controlling a plasma processing apparatus which includes a vacuum vessel, a first, second and third RF power supply, a first and second electrode, and a phase control unit for controlling a phase difference between a second RF voltage from the second RF power supply and a third... Agent: Antonelli, Terry, Stout & Kraus, LLP

20070205179 - Manufacturing method of liquid crystal display device: A method of manufacturing a liquid crystal display device includes forming an assembly by sealing a gap between outer circumferential regions of two glass substrates, which are positioned to face each other, with an outer circumferential sealing member. The assembly is dipped in an etching solution contained in an etching... Agent: Frishauf, Holtz, Goodman & Chick, PC

20070205180 - Nanoimprint lithography having solvent-free liquid polymer resist: A polymer resist having a good flow is used in a nanoimprint lithography. A residual layer remained is thus thinner. Hence, a time spent for etching the residual layer is reduced. And a pattern obtained after the nanoimprint lithography will not be ruined because of a long-time etching. Nevertheless, the... Agent: Troxell Law Office PLLC

20070205181 - Substrate processing method: Disclosed is a substrate processing method that dissolves and deforms a photoresist film having a first pattern formed on a substrate to reshape the resist film into a second pattern. The method includes: evacuating a processing chamber, thereby reducing an internal pressure of the processing chamber from a standard pressure... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.