Etching a substrate: processes inventions 08/07

20070199920 - Concave/convex pattern forming method and information recording medium manufacturing method: A concave/convex pattern forming method which makes it possible to easily press a stamper against a resin layer, and sufficiently maintain the shape of the concave/convex pattern after removing the stamper. During a resin layer forming process, the resin layer is formed using a resin material having a glass transition... Agent: Greenblum & Bernstein, P.L.C

20070199921 - Method and apparatus for manufacturing display device: A manufacturing apparatus of a display device, comprises: a stage on which an insulating substrate having an organic layer is seated; a mold which moves up and down above the insulating substrate, and forms a pattern on the organic layer; a first driver which aligns and moves the mold upwards... Agent: Macpherson Kwok Chen & Heid LLP

20070199923 - Polishing device and polishing method: Disclosed are a polishing device and polishing method for forming a wafer with high flatness using a CMP process. For the polishing of the wafer, a polishing device including a chuck section and a polishing member having a needle member is used. In the polishing, the wafer is fixed on... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20070199919 - Surface treatment method, manufacturing method of color filter substrate, and manufacturing method of electro-optical device: A surface treatment method using a plasma treatment apparatus which has an electric discharge generation portion facing a surface of a substrate with a gap therebetween, the substrate being placed on a supporting body, and a construction in which the gap is supplied with a treatment gas, the method includes:... Agent: Harness, Dickey & Pierce, P.L.C

20070199922 - Etch methods to form anisotropic features for high aspect ratio applications: Methods for forming anisotropic features for high aspect ratio application in etch process are provided in the present invention. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios through a sidewall passivation management scheme. In one embodiment, sidewall passivations are managed by selectively... Agent: Patterson & Sheridan, LLP

20070193976 - Plasma processing apparatus and plasma processing method: The invention provides a plasma processing apparatus and a plasma processing method capable of controlling the voltage of the processing substrate with high accuracy, thereby enabling a highly accurate plasma processing. According to the invention, a voltage Vw of the processing substrate is measured using a processing substrate with a... Agent: Antonelli, Terry, Stout & Kraus, LLP

20070193978 - Methods for forming banks and organic thin film transistors comprising such banks: Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using... Agent: Harness, Dickey & Pierce, P.L.C

20070193973 - Infinitely selective photoresist mask etch: A method for etching features into an etch layer disposed below a photoresist mask without an intermediate hardmask is provided. A plurality of etch cycles are provided. Each etch cycle comprises providing a deposition etch phase that etches features into the etch layer and deposits polymer on sidewalls of the... Agent: Beyer Weaver LLP

20070193974 - Method to manipulate selectivity of a metal oxide sensor: A method of selectively enhancing the sensitivity of a metal oxide sensor includes fabricating a ZnO sensor having a ZnO sensor element therein; and exposing the ZnO sensor element to a plasma stream.... Agent: Robert D. Varitz

20070193975 - Using positive dc offset of bias rf to neutralize charge build-up of etch features: Apparatus, systems and methods for plasma etching substrates are provided. The invention achieves dissipation of charge build-up on a substrate being plasma etched to avoid notching or twisting in high aspect ratio contents and similar features. Charge build-up on a substrate being etched by plasma etching can be dissipated by... Agent: Whyte Hirschboeck Dudek S.c.

20070193977 - Plasma etching methods using nitrogen memory species for sustaining glow discharge: Methods are described which comprise: providing a plasma etching apparatus having an etching chamber; disposing a substrate to be etched in the chamber; introducing N2 gas and one or more process gases into the chamber; and etching the substrate, wherein the introduction of the N2 gas is stopped prior to... Agent: Akin Gump Strauss Hauer & Feld L.L.P.

20070187356 - Method of manufacturing a resin molded article and the method of manufacturing an ink jet head: In the case of manufacturing resin-made parts by pressing against a heated resin material a heated die having concavo-convex patterns of inverse shapes with respect to the shapes of minute concave or convex portions of a resin molded article such as a head substrate of an ink jet head, at... Agent: Sughrue Mion, PLLC

20070187361 - Pattern forming method and phase shift mask manufacturing method: A light-shielding layer over a transparent substrate is processed into a predetermined pattern by first etching and then a recess is formed in an underlying layer below the light-shielding layer by second etching using at least the light-shielding layer as a mask. Subsequently, a defect inspection of the recess is... Agent: Sughrue Mion, PLLC

20070187358 - Device manufacturing method and computer program product: A method of forming features, e.g. contact holes, at a higher density than is possible with conventional lithographic techniques involves forming an array of sacrificial positive features, conformally depositing a sacrificial layer so that negative features are formed interleaved with the positive features, directionally etching the sacrificial layer and removing... Agent: Pillsbury Winthrop Shaw Pittman, LLP

20070187359 - Dry etching method, fine structure formation method, mold and mold fabrication method: A substance including tungsten and carbon is etched by using plasma. The plasma is generated from a mixed gas of a gas including a fluorine atom and a gas including a CN bond and a hydrogen atom.... Agent: Majestic Parsons Siebert & Hsue

20070187357 - Method for etching a workpiece: A method for etching an AlTiC workpiece comprises forming a copper mask layer on the AlTiC, lithographically patterning said copper mask layer to thereby expose portions of the AlTiC, reactive ion etching the AlTiC using a process gas comprising argon and fluorine, and removing the mask layer. The walls of... Agent: Kenneth E. Leeds

20070187360 - Method for making a surface acoustic wave device package: A method for making a SAW device package includes the steps of: forming a pattern of a metal layer, that defines transmitting and receiving transducers of a SAW die, on a wafer; forming a pattern of a first photo sensitive layer, which defines a peripheral wall of a cap of... Agent: Ostrolenk Faber Gerb & Soffen

20070187362 - Dry etching method, fine structure formation method, mold and mold fabrication method: A substance including tungsten and carbon is etched by using plasma. The plasma is generated from a mixed gas of a gas including a fluorine atom, a gas including a nitrogen atom and a gas including a hydrocarbon molecule.... Agent: Mcdermott Will & Emery LLP

20070187363 - Substrate processing apparatus and substrate processing method: A substrate processing apparatus that enables a state of plasma over a substrate to be maintained in a desired state easily. A plasma processing apparatus 10 that has therein a camber 11, a stage 12, and a processing gas introducing nozzle 38 carries out etching on a wafer W. The... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070181534 - Barrier polishing liquid and chemical mechanical polishing method: (In Formula (I), R1 to R6 independently denote a hydrogen atom or an alkyl group having 1 to 10 carbons, X and Y independently denote an ethyleneoxy group or a propyleneoxy group, and m and n independently denote an integer of 0 to 20.) There is also provided a chemical... Agent: Sughrue Mion, PLLC

20070181528 - Method of etching treatment: The formation and adhesion of excessive deposits are suppressed in an etching process in which a resist of the ArF lithography generation and later is used as a mask. In an etching treatment method which is performed, by use of an etching apparatus which has a vacuum chamber 101, means... Agent: Antonelli, Terry, Stout & Kraus, LLP

20070181529 - Corona discharge plasma source devices, and various systems and methods of using same: The present invention is generally directed to corona discharge plasma source devices, and various systems and methods for using same. In one illustrative embodiment, the system comprises a process chamber, a support member comprising a plurality of tapered conductive members positioned in the member and a power supply system for... Agent: Williams, Morgan & Amerson

20070181531 - Plasma processing apparatus and plasma processing method: A microwave plasma processing apparatus 100 includes a plurality of dielectric parts 31, through which microwaves are transmitted via a slot, and gas nozzles 27 disposed at positions lower than the dielectric parts 31. The dielectric parts 31 and the gas nozzles 27 are each constituted with a porous portion... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070181530 - Reducing line edge roughness: A method of forming features in an etch layer disposed below a mask with features is provided. The mask is conditioned. The conditioning, comprising providing a conditioning gas consisting essentially of at least one noble gas, forming a plasma from the conditioning gas, and exposing the mask to the plasma... Agent: Beyer Weaver LLP

20070181532 - Cmp clean process for high performance copper/low-k devices: A post chemical-mechanical polishing cleaning method, comprising contacting a die with a first chemistry that removes at least some organic compounds and ions from a surface of the die. After contacting the die with the first chemistry, the method further comprises contacting the die with a second chemistry that removes... Agent: Texas Instruments Incorporated

20070181533 - Process for cleaning aluminum and aluminum alloy surfaces with nitric acid and chromic acid-free compositions: A process for cleaning (e.g., desmutting) an aluminum surface, using compositions free of nitric acid and chromic acid and comprising, in one embodiment, an oxidant and at least one mineral acid salt. In another embodiment, the process uses a composition free of nitric acid and chromic acid and comprising an... Agent: Renner Otto Boisselle & Sklar, LLP

20070181535 - Compositions and methods for cmp of semiconductor materials: The invention provides a composition for chemical-mechanical polishing, The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V... Agent: Steven Weseman Associate General Counsel, I.p.

20070175857 - Decorative surface treatment for metals: A decorative surface treatment of hardenable metals to achieve a three dimensional textured surface with the appearance of mokume gane or Damascus steel. The annealed surface of the metal is selectively hardened by a laser in zones next to unhardened areas. The unhardened areas are selectively eaten away by abrasives... Agent: Bruce T. Boone

20070175863 - Single wafer etching apparatus and single wafer etching method: An object of the present invention is to provide a single wafer etching apparatus realizing a high flatness of wafers and an increase in productivity thereof. In the single wafer etching apparatus, a single thin disk-like wafer sliced from a silicon single crystal ingot is mounted on a wafer chuck... Agent: Reed Smith, LLP Attn: Patent Records Department

20070175856 - Notch-free etching of high aspect soi structures using a time division multiplex process and rf bias modulation: The present invention provides a method and an apparatus for reducing, or eliminating, the notching observed in the creation of SOI structures on a substrate when plasma etching through an alternating deposition/etch process by modulating the RF bias that is applied to the cathode. Modulation of the bias voltage to... Agent: Harvey S. Kauget Phelps Dunbar, LLP

20070175858 - Methods for post-etch deposition of a dielectric film: Methods for post-etch deposition on a dielectric film are provided in the present invention. In one embodiment, the method includes providing a substrate having a low-k dielectric layer disposed thereon in a etch reactor, etching the low-k dielectric layer in the etch reactor, and forming a protection layer on the... Agent: Patterson & Sheridan, LLP

20070175859 - Methods for forming improved self-assembled patterns of block copolymers: A method for forming self-assembled patterns on a substrate surface is provided. First, a block copolymer layer, which comprises a block copolymer having two or more immiscible polymeric block components, is applied onto a substrate that comprises a substrate surface with a trench therein. The trench specifically includes at least... Agent: Scully Scott Murphy & Presser, PC

20070175860 - 3d lithography with laser beam writer for making hybrid surfaces: A method of etching a feature in a surface of a substrate. The substrate is provided. A photoresist layer is formed on the surface of the substrate. A thickness profile of the formed photoresist layer is determined. A grayscale scanning pattern is determined based on the feature and the thickness... Agent: Ratnerprestia

20070175861 - Methods and apparatus for in-situ substrate processing: A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a gas distribution system. The plasma processing system also includes a gas flow control assembly coupled to the gas distribution system and configured to control a set of input gases provided by the gas distribution... Agent: Ipsg, P.C.

20070175862 - Anisotropic etching agent composition used for manufacturing of micro-structures of silicon and etching method: An anisotropic etching agent composition for manufacturing of micro-structures of silicon comprising an alkali compound and hydroxylamines; an anisotropic etching method with the use of the etching agent composition. The alkali compound is preferably tetramethylammonium hydroxide, and the hydroxylamines is preferably at least one kind selected from the group consisting... Agent: Antonelli, Terry, Stout & Kraus, LLP

20070175864 - Low cost high throughput processing platform: As part of a system for processing workpieces, a workpiece support arrangement, separate from a process chamber arrangement supports at least two workpieces at least generally in a stacked relationship to form a workpiece column. A transfer arrangement transports at least two of the workpieces between the workpiece column and... Agent: Pritzkau Patent Group, LLC

20070175865 - Process for the fabrication of an inertial sensor with failure threshold: A process for the fabrication of an inertial sensor with failure threshold includes the step of forming, on top of a substrate of a semiconductor wafer, a sample element embedded in a sacrificial region, the sample element configured to break under a preselected strain. The process further includes forming, on... Agent: Seed Intellectual Property Law Group PLLC