Etching a substrate: processes inventions 07/07

20070170145 - Method of manufacturing a display substrate: A method of manufacturing a display substrate includes forming a first metallic pattern including gate and storage conductors and a gate electrode of a switching device on a base substrate, forming a gate insulation layer, forming a second metallic pattern and a channel portion including a source line, source and... Agent: Macpherson Kwok Chen & Heid LLP

20070170146 - Fin structure formation: A method for forming fin structures is provided. Sacrificial structures are provided on a substrate. Fin structures are formed on the sides of the sacrificial structures. The forming of the fin structures comprises a plurality of cycles, wherein each cycle comprises a fin deposition phase and a fin profile shaping... Agent: Beyer Weaver LLP

20070170147 - Etching method and method of fabricating opening: An etching method is disclosed. First, a patterned photoresist layer is formed on a silicon material. Next, in an etching machine, using the patterned photoresist layer as a mask and using bromine hydride (HBr) as reactive gas, an etching process is performed on the silicon material. Afterwards, a ramp-down mode... Agent: Jianq Chyun Intellectual Property Office

20070170148 - Methods for in-situ generation of reactive etch and growth specie in film formation processes: Methods and apparatus are disclosed for the formation and utilization of metastable specie in a reaction chamber for processing substrates. The metastable specie may be used for etching the surface of substrates in situ, deposition processes during processing of the substrate.... Agent: Diehl Servilla, LLC

20070170149 - Vacuum processing apparatus and vacuum processing method of sample: A vacuum processing method includes mounting a sample to be processed on a sample mounting surface on a sample holder placed in a vacuum container whose inside can be depressurized, feeding a processing gas and electric field to a space above the sample holder inside of the vacuum container to... Agent: Antonelli, Terry, Stout & Kraus, LLP

20070170150 - Process for removing a layer: Components comprising corrosion products are often reused, in which case the corrosion product has to be removed. According to the prior art, this takes a very long time since the reaction times with the corrosion product are often very long. According to the invention, the corrosion product is pretreated in... Agent: Siemens Corporation Intellectual Property Department

20070163996 - Plasma processing apparatus and plasma processing method: At a frame 26 in a microwave plasma processing apparatus 100, numerous horizontal spray gas nozzles 27 formed therein injection holes A and numerous vertical gas nozzles 28 formed therein injection holes B are fixed. A first gas supply means 50 injects argon gas through the injection holes A into... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20070163995 - Plasma processing method, apparatus and storage medium: In etching an insulating film such as an SiOC film or the like, in order to suppress a diameter of a hole or a width of a groove, a pre-processing is performed before performing the etching. In the pre-processing, a processing gas containing CF4 gas and CH3F gas is converted... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070163991 - Forming apparatus and forming method: A forming apparatus having film pull-out mechanism which pulls out, from winding body of transfer film in which a predetermined layer is formed on base film, transfer film from its end portion, film transport mechanism which transports pulled out transfer film to downstream side, transfer mechanism which transfers predetermined layer... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070163992 - Method and device for contacting semiconductor chips: The invention relates to a method and device that make it possible to increase the productivity of the chip bonding and the before and after working steps associated with the chip bonding. To this end, the invention provides a method for contacting semiconductor chips (3) on a metallic substrate (16),... Agent: Nixon & Vanderhye, PC

20070163993 - Planarization with reduced dishing: A method of forming a planarized layer on a substrate, where the substrate is cleaned, and the layer is formed having a surface with high portions and low portions. A resistive mask is formed over the low portions of the layer, but not over the high portions of the layer.... Agent: Lsi Logic Corporation

20070163994 - Charge-free layer by layer etching of dielectrics: A method for etching a dielectric film is provided herein. In accordance with the method, a device (201) is provided which comprises a first chamber (203) equipped with a first gas supply (209) and a second chamber (205) equipped with a second gas supply (215), wherein the second chamber is... Agent: Fortkort & Houston P.C.

20070163997 - Poly etch without separate oxide decap: The use of an ammonium hydroxide spike to a hot tetra methyl ammonium hydroxide (TMAH) solution to form an insitu poly oxide decapping step in a polysilicon (poly) etch process, results in a single step rapid poly etch process having uniform etch initiation and a high etch selectivity, that may... Agent: Schwegman, Lundberg, Woessner & Kluth, P.A.

20070163998 - Composition for polishing semiconductor layers: The aqueous polishing composition is useful for polishing semiconductor substrates. The polishing composition includes 0.05 to 50 weight percent abrasive; and 0.001 to 2 weight percent lambda type carrageenan, the lambda type carrageenan having a concentration useful for accelerating TEOS removal rate.... Agent: Rohm And Haas Electronic Materials Cmp Holdings, Inc.

20070158306 - Method of forming a metal line and method of manufacturing display substrate having the same: A method of forming a metal line is provided. A first metal layer and a second metal layer protecting the first metal layer are formed on a base substrate. The first metal layer includes aluminum or aluminum alloy. A photoresist pattern having a linear shape is formed on the second... Agent: Cantor Colburn, LLP

20070158301 - Post-parting etch to smooth silicon sliders: To smooth silicon sliders that have been parted from each other on a wafer by DRIE, an isotropic etch using fluorine either in a gas or in an aqueous solution is performed prior to separating the individual sliders from the wafer.... Agent: Rogitz & Associates

20070158302 - Systems and methods for gas assisted resist removal: A system for removing resist from a substrate is configured to apply an ozonated resist stripper to a resist that is to be removed, as well as to direct another gas toward the resist. In a resist removal method, a resist stripper that includes ozone is applied to a resist... Agent: Trask Britt, P.C./ Micron Technology

20070158303 - Structural modification using electron beam activated chemical etch: Structural modification using electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target... Agent: Joshua D. Isenberg Jdi Patent

20070158304 - Etch selectivity enhancement in electron beam activated chemical etch: Etch selectivity enhancement during electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the... Agent: Joshua D. Isenberg Jdi Patent

20070158305 - Apparatus and method for plasma treating a substrate: Apparatus is provided for plasma treating a substrate. This has a chamber (2) and a plasma generator (4) which forms a plasma from one or more gases flowing within the chamber so as to produce one or more species for interacting with a substrate (8) placed within the chamber. A... Agent: Maine & Asmus

20070158307 - Method for selective etching: Disclosed is a method of selective etching a first material on a substrate with a high selectivity towards a second material by flowing a liquid etchant across a substrate surface at a flow sufficient fast to generate a minimum mean velocity v parallel to the substrate's surface.... Agent: Young & Thompson

20070158308 - Method for manufacturing single-side mirror surface wafer: A surface of a semiconductor wafer which has been lapped is ground. This removes a damage caused on the wafer surface during lapping, thereby increasing the flatness of the wafer surface. Next, the wafer is subjected to composite etching and the both surfaces are polished, i.e., subjected to mirror polishing... Agent: Greenblum & Bernstein, P.L.C

20070158309 - Slurry composition for chemical-mechanical polishing capable of compensating nanotopography effect and method for planarizing surface of semiconductor device using the same: A slurry composition for chemical-mechanical polishing capable of compensating nanotopography effect present on the surface of a wafer, and a method for planarizing the surface of a semiconductor device that utilizes the same are disclosed. The slurry composition of the present invention is aimed at compensating the nanotopography effect during... Agent: Pillsbury Winthrop Shaw Pittman, LLP

20070151950 - Etching apparatus for use in manufacture of flat panel display device and manufacturing method using the same: Disclosed herein are an apparatus and method for manufacturing a flat panel display device. The apparatus and method for manufacturing a flat panel display device contribute to a compact apparatus for etching a substrate and damage or breakage prevention of the substrate during the transfer of the substrate by virtue... Agent: Mckenna Long & Aldridge LLP

20070151942 - Apparatus to send biological fluids through a printed wire board: A device containing a printed wire board (PWB), wherein the PWB comprises a fluid channel, wherein the fluid channel is a closed channel having a noble metal-containing layer on a surface of the fluid channel is disclosed. A method of making a device containing providing a substrate of a PWB;... Agent: Morrison & Foerster LLP

20070151943 - Fluxgate sensor integrated in printed circuit board and method for manufacturing the same: A fluxgate sensor is integrated in a printed circuit board. The fluxgate sensor has two bar-type (or rectangular-ring shaped) soft magnetic cores to form a closed magnetic path on a printed circuit board and an excitation coil in the form of a metal film is wound around the two bar-type... Agent: Sughrue Mion, PLLC

20070151944 - Method for making solar cell: A surface texturization process for a silicon wafer, which is applied to a method for making a solar cell, is provided. The surface texturization process substantially comprises: 1) providing an acidic mixed solution; 2) immersing the silicon wafer in the acidic mixed solution; and 3) etching the acidic mixed solution... Agent: Birch Stewart Kolasch & Birch

20070151945 - Method of erasing image and method of recycling recording medium: Provided is a method of erasing an image, including exposing an image, formed by applying ink containing a dye to a recording medium, to an oxidizing gas generated by discharge to erase the image, wherein the dye comprises an anionic anthraquinone dye and a method of recycling a recording medium.... Agent: Fitzpatrick Cella Harper & Scinto

20070151946 - Method for monitoring edge bead removal process of copper metal interconnection: Disclosed is a method for monitoring an edge bead removal process for a copper metal interconnection. The method includes the steps of (a) forming a copper metal layer on a semiconductor wafer, (b) performing the edge bead removal (EBR) process of removing the copper metal layer formed in an edge... Agent: The Law Offices Of Andrew D. Fortney, Ph.d., P.C.

20070151947 - Method for setting plasma chamber having an adaptive plasma source, plasma etching method using the same and manufacturing method for adaptive plasma source: Disclosed herein is a plasma chamber setting method for generating plasma in a plasma chamber. A plurality of plasma source coils, including a first plasma source coil, a second plasma source coil having an etching rate at the center part thereof higher than that of the first plasma source coil,... Agent: Morgan & Finnegan, L.L.P.

20070151948 - Method of selectively stripping a metallic coating: A process for chemically stripping a metallic coating on an external surface of a substrate without attacking an internal surface defined by an internal passage within the substrate. Processing steps include depositing within the internal passage a thermally-decomposable wax having a melting temperature above 75° C. so as to mask... Agent: Hartman & Hartman, P.C.

20070151949 - Semiconductor processes and apparatuses thereof: Methods of semiconductor processing and apparatuses are disclosed. An organic solvent is applied over a surface of a material layer on a substrate in which the material layer includes a short-chain structure. A fluorine-containing solution is applied over the surface of the material layer to substantially remove the material layer... Agent: Duane Morris LLPIPDepartment (tsmc)

20070151951 - Stopper for chemical mechanical planarization, method for manufacturing same, and chemical mechanical planarization method: A stopper for chemical mechanical planarization comprising an organosilicon polymer, in particular a polycarbosilane, is provided. The stopper used for polishing wafers with a wiring pattern in the manufacture of semiconductor devices to protect interlayer dielectric films made of a material such as SiO2, fluorine dope SiO2, or organic or... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.