Etching a substrate: processes inventions 06/07

20070145004 - Method for fabricating thin film pattern and method for fabricating flat panel display device using the same: A method for fabricating a thin film pattern and a method for fabricating a flat panel display device using the same to form an organic material pattern by not using a photo process are disclosed. The method for fabricating the thin film pattern includes forming a first conductive thin film... Agent: Mckenna Long & Aldridge LLP

20070145010 - Removal rate estimating method of a chemical mechanical polishing process under mixed products or mixed layers: A removal rate estimating method of a chemical mechanical polishing process under mixed products or mixed layers is provided, the estimation at least comprises: providing a pad removal rate of a specific product or layer; providing a removal rate adjustment; and summing up the pad removal rate of the specific... Agent: Birch Stewart Kolasch & Birch

20070145002 - Multi-printed etch mask process to pattern features: A method for patterning fine features using multiple jet-printed etch masks includes forming an initial feature through a first jet-printed etch mask and re-shaping the initial feature through at least one additional jet-printed etch mask.... Agent: Joseph D. Dreher Fay, Sharpe, Fagan, Minnich & Mckee, LLP

20070145003 - Method of etching semiconductor device: In a method of etching a semiconductor device or a liquid crystal device, an etching liquid is prepared to include a solvent, and a solute containing at least iodine, at least one iodine compound and alcohol. The etching liquid is applied to a substrate of the semiconductor device or the... Agent: Kanesaka Berner & Partners

20070145005 - Controlling system and method for operating the same: The invention is directed to a method for controlling a critical dimension of a patterned photoresist layer. The method comprises steps of measuring a critical dimension of a raised pattern in a patterned photoresist layer after a photolithography process is performed on the photoresist layer. A determining process is performed... Agent: Jianq Chyun Intellectual Property Office

20070145006 - Plasma etching apparatus: Embodiments relate to a plasma etching apparatus that may include a lower chamber, an upper chamber installed on the upper side of the lower chamber, for providing a space in which plasma is generated, a dome section installed on the upper chamber, an electrostatic chuck installed in the lower chamber,... Agent: Sherr & Nourse, PLLC

20070145007 - Semiconductor structure: This invention relates to a semiconductor structure for dual damascene processing and includes upper and lower low k dielectric layers formed in a stack when the upper surface of the lower layer has an integral etch stop layer formed by exposing the upper surfaces of the layer H2 plasma without... Agent: Volentine Francos, & Whitt PLLC

20070145009 - Etch compositions and methods of processing a substrate: The invention includes an etchant composition containing isopropyl alcohol and one or more of HF, NH4F and tetramethyl ammonium fluoride (TMAF). The invention encompasses a method of processing a substrate. A substrate is provided which has a first material containing at least one of polysilicon, monocrystalline silicon and amorphous silicon,... Agent: Wells St. John P.s.

20070145008 - Techniques of anisotropic wet etch micromachining for comb drive transducers and resonance frequency reduction: Wet anisotropic etching techniques are well known micromachining apparatus in MEMS technology. The wet anisotropic etchant etch some of the material crystal planes faster than the other. For example the (001) planes are etched much faster than the (111) planes. The final shape is dependent upon the etch mask and... Agent: Wolf, Block, Shorr And Solis-cohen LLP

20070145011 - Chemical mechanical polishing system and process: Chemical mechanical polishing (CMP) systems and methods are provided herein. One aspect of the present subject matter is a polishing system. One polishing system embodiment includes a platen adapted to receive a wafer, and a polishing pad drum that has a cylindrical, or generally cylindrical, shape with a length and... Agent: Schwegman, Lundberg, Woessner & Kluth, P.A. Attn. Marvin L. Beckman

20070145013 - Method for polishing workpiece, polishing apparatus and method for manufacturing semiconductor device: A region being free of groove is provided in a central portion of the polishing pad, and a region having grooves formed thereon is provided the outer portion thereof. A retainer ring surrounds and sustains a circumference portion of the wafer, and a part of the portion that tends to... Agent: Young & Thompson

20070145012 - Slurry and method for chemical-mechanical polishing: Disclosed is a slurry and method for chemical-mechanical polishing operation. The slurry may contain abrasive particles, an oxidizer, a pH controller, a chelating agent and water. The viscosity of the slurry may be in the range of about 1.0 cP—about 1.05 cP, so that the step difference may be reduced... Agent: Harness, Dickey & Pierce, P.L.C

20070145014 - Polishing composition for glass substrate: The present invention provides a polishing composition for a glass substrate having a pH of from 0.5 to 5, containing a silica of which primary particles have an average particle size of from 5 to 50 nm and an acrylic acid/sulfonic acid copolymer having a weight-average molecular weight of from... Agent: Birch Stewart Kolasch & Birch

20070138129 - Method for manufacturing field emission cathode: A method for manufacturing carbon nanotube field emission includes the steps of: providing a substrate (110) with a metallic layer (130) thereon; defining a plurality of holes (131) in the metallic layer; oxidizing the metallic layer to form a metallic oxide layer (132) thereon; removing portions of the metallic oxide... Agent: PCe Industry, Inc. Att. Cheng-ju Chiang Jeffrey T. Knapp

20070138136 - Method for etching photolithographic substrates: The present invention provides a method for processing a photolithographic substrate within a vacuum chamber. The method comprising the steps of cooling the photolithographic substrate to a target temperature before the photolithographic substrate is processed within the vacuum chamber. At least one processing gas is introduced into the vacuum chamber.... Agent: Harvey S. Kauget Phelps Dunbar, LLP

20070138128 - Dielectric device and method of manufacturing the same: A dielectric device has a first conductor and a dielectric disposed thereon. An intermediate region is formed between the first conductor and dielectric. In the intermediate region, an additive different from the first conductor and dielectric and the dielectric are mixed with each other. The additive contains at least one... Agent: Oliff & Berridge, PLC

20070138127 - External electrode forming method: An element forming an electronic component has a first face and a second face facing each other, and a third face adjacent to each of the first face and the second face. A method of forming an external electrode of the electronic component involves a pre-formation step, first to third... Agent: Oliff & Berridge, PLC

20070131646 - Method and apparatus for nano-pantography: A method is provided for creating a plurality of substantially uniform nano-scale features in a substantially parallel manner in which an array of micro-lenses is positioned on a surface of a substrate, where each micro-lens includes a hole such that the bottom of the hole corresponds to a portion of... Agent: Winstead Sechrest & Minick P.C.

20070131645 - Method of making an electronic device cooling system: A method is provided. The method includes forming a conductive layer on an inner surface of a substrate and providing a sacrificial layer over the conductive layer. The method includes forming a plurality of channels in the sacrificial layer and plating the sacrificial layer to substantially fill the plurality of... Agent: Patrick S. Yoder Fletcher Yoder

20070131647 - Semiconductor device and support method for designing the same: A semiconductor device includes a bundle of wiring lines arranged in parallel and connected to a macro cell to transfer a same signal; and a bridge wiring line configured to bridge adjacent ones of the wiring lines of the bundle. Wiring line resistances between ends of the adjacent wiring lines... Agent: Foley And Lardner LLP Suite 500

20070131648 - Method of fabricating inkjet printhead: A method of fabricating an inkjet printhead. The method of fabricating an inkjet printhead includes sequentially forming an insulating layer, a heater, and an electrode on a substrate and forming a passivation layer on the insulating layer to cover the heater and the electrode; forming a trench that exposes the... Agent: Stanzione & Kim, LLP

20070131649 - Etching method: The invention is directed to an etching method. The etching method comprises steps of providing a material layer having a patterned hard mask layer formed thereon and then performing a first dry etching process by using the patterned hard mask layer as a mask, wherein a first power mode of... Agent: Jianq Chyun Intellectual Property Office

20070131650 - Plasma chamber wall segment temperature control: A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other... Agent: Pillsbury Winthrop Shaw Pittman, LLP

20070131651 - Radical generating method, etching method and apparatus for use in these methods: d

20070131652 - Plasma etching method: An object of the present invention is to provide a plasma etching method by which both of a requirement for a trench shape and a requirement for a aspect ratio can be satisfied, and a trench having a side wall of a smooth shape can be formed. According to the... Agent: Wenderoth, Lind & Ponack L.L.P.

20070131653 - Methods and apparatus for processing a substrate: Apparatus and methods adapted to polish an edge of a substrate include a polishing film, a frame adapted to tension and load the polishing film so that at least a portion of the film is supported in a plane, and a substrate rotation driver adapted to rotate a substrate against... Agent: Dugan & Dugan, PC

20070131654 - Methods and apparatus for processing a substrate: Apparatus and methods adapted to polish an edge of a substrate include a polishing film, a frame adapted to tension and load the polishing film so that at least a portion of the film is supported in a plane, and a substrate rotation driver adapted to rotate a substrate against... Agent: Dugan & Dugan, PC

20070125745 - Method of making an ignition device: A method of manufacturing an ignition device is provided. The method includes patterning a plurality of resistors on a membrane to form heating elements and thermally isolating the heating elements from an external environment via a cavity disposed adjacent to the heating elements.... Agent: Patrick S. Yoder Fletcher Yoder

20070125746 - Laser etching method and apparatus therefor: The invention provides a laser etching method for optical ablation working by irradiating a work article formed of an inorganic material with a laser light from a laser oscillator capable of emitting in succession light pulses of a large energy density in space and time with a pulse radiation time... Agent: Fitzpatrick Cella Harper & Scinto

20070125747 - Process for polishing glass substrate: A process for polishing a glass substrate required to have high-degree of flatness and smoothness, is provided. A preliminarily polished glass substrate is applied with a surface treatment by a first-step gas-cluster ion beam etching to improve the flatness, and then, the glass substrate is applied with a surface treatment... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070125749 - Apparatus and method for removing protective film on article: A method for removing a protective film from a surface of an article is provided. The protective film includes a primary protective layer (e.g., a diamond-like carbon layer) and a transition layer, the transition layer being formed directly upon the surface of the article and thereby facilitating an attachment/bond of... Agent: PCe Industry, Inc. Att. Cheng-ju Chiang Jeffrey T. Knapp

20070125748 - Method for controlling a thickness of a first layer and method for adjusting the thickness of different first layers: A method for controlling a thickness of a first layer of an electrical contact of a semiconductor device, whereby the semiconductor device comprises a semiconductor layer, a first layer and a second layer, whereby at least a part of the semi-conductor layer is covered with the first layer, whereby at... Agent: Morrison & Foerster LLP

20070125750 - Method for removing post-etch residue from wafer surface: A low-k dielectric film is deposited on the wafer. A metal layer is then deposited over the low-k dielectric film. A resist pattern is formed over the metal layer. The resist pattern is then transferred to the underlying metal layer to form a metal pattern. The resist pattern is stripped... Agent: North America Intellectual Property Corporation

20070125751 - Stripping device and stripping apparatus: A stripping apparatus has a simplified structure for stripping a supporting plate from a layered structure, occupies less space, and strips a supporting plate in a shorter period of time. The stripping apparatus comprises a transfer robot, a cassette, a stripping device and a cleaning device which surround the transfer... Agent: Carrier Blackman And Associates