Etching a substrate: processes inventions 05/07

20070119811 - Masking material for dry etching: The object of the present invention is to provide a masking material for dry etching, which is suitable for fine processing of a magnetic film as thin as a few nm such as NiFe or CoFe constituting a TMR film and capable of simplifying the process for producing a TMR... Agent: Wenderoth, Lind & Ponack, L.L.P.

20070119812 - Process and equipment for bonding by molecular adhesion: The invention relates to a process for bonding by molecular adhesion of two substrates to one another during which the surfaces of the substrates are placed in close contact and bonding occurs by propagation of a bonding front between the substrates. The invention includes, prior to bonding, a step of... Agent: Winston & Strawn LLP Patent Department

20070119813 - Gate patterning method for semiconductor processing: A method of patterning a polysilicon feature includes forming a hard mask layer over a polysilicon layer, wherein the hard mask layer includes a silicon rich silicon oxynitride layer, and a silicon oxynitride layer or bottom anti-reflective coating (BARC) layer overlying the silicon rich silicon oxynitride layer. The method further... Agent: Texas Instruments Incorporated

20070119814 - Apparatus and method for detecting an endpoint in a vapor phase etch: Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that... Agent: Texas Instruments Incorporated

20070119815 - Process for laser processing and apparatus for use in the same: A process for laser processing an article, which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof, said article being made from a material selected from a semiconductor, a metal, an insulator, and a combination thereof; and irradiating... Agent: Eric Robinson

20070119816 - Systems and methods for reclaiming process fluids in a processing environment: Methods and systems for chemical management. In one embodiment, a blender is coupled to a processing system and configured to supply an appropriate solution or solutions to the system. Solutions provided by the blender are then reclaimed from the system and subsequently reintroduced for reuse. The blender may be operated... Agent: Air Liquide

20070119817 - Manufacturing method of silicon wafer: The manufacturing method of a silicon wafer of the present invention includes an etching process (14) storing acid etching solution and alkali etching solution in plural etching tanks, respectively, and immersing a silicon wafer gone through a lapping process and having degraded superficial layers in the acid etching solution and... Agent: Reed Smith, LLP Attn: Patent Records Department

20070114203 - High density printed circuit board and method of manufacturing the same: The present invention relates to a high density printed circuit board and a method of manufacturing the same which enable a thin printed circuit board to be manufactured and can overcome problems occurring in a conventional method of manufacturing a printed circuit board because a conventional CCL is not used... Agent: Staas & Halsey LLP

20070114204 - Method for making guide panel for vertical probe card in batch: A method for making a guide panel for a vertical probe card in batch includes the steps of a) preparing a non-metal substrate, b) forming a shielding layer having a plurality of openings on the substrate, c) etching a part of the substrate corresponding to the openings of the shielding... Agent: Browdy And Neimark, P.l.l.c. 624 Ninth Street, Nw

20070114205 - Method of forming etching mask: The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning... Agent: Marger Johnson & Mccollom, P.C.

20070114206 - Plasma chamber wall segment temperature control: A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other... Agent: Pillsbury Winthrop Shaw Pittman, LLP

20070114207 - Charge-free method of forming nanostructures on a substrate: A charge-free method of forming a nanostructure at low temperatures on a substrate. A substrate that is reactive with one of atomic oxygen and nitrogen is provided. A flux of neutral atoms of least one of oxygen and nitrogen is generated within a laser-sustained-discharge plasma source and a collimated beam... Agent: Los Alamos National Security, LLC

20070114208 - Substrate treating method and apparatus: A substrate treating method includes heating a substrate having an ion-implanted film formed on a surface thereof in an oxygen environment, and removing the film from the surface of the substrate by supplying a treating solution containing sulfuric acid and hydrogen peroxide solution or a treating solution containing ozone to... Agent: Ostrolenk Faber Gerb & Soffen

20070108160 - Plasma etching of tapered structures: The invention relates to a method of plasma etching substrates, in particular of etching tapered passages through substrates, using a process gas comprising at least one halogenide and oxygen.... Agent: Demont & Breyer, LLC

20070108159 - Probe for scanning probe microscope and method of producing the same: A probe for a scanning probe microscope and a method for fabricating the probe is provided that can perform accurate measurement without a base of a cantilever having contact with an object to be measured and without the object being hidden by the base of the probe. The probe for... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070108161 - Chamber components with polymer coatings and methods of manufacture: A process chamber component comprises a first surface, which in use is exposed to an energized gas in the chamber, the first surface comprising a parylene coating, and second surface, which in use is not exposed to the energized gas. The interior surfaces of a process chamber can be coated,... Agent: Janah & Associates, P.C.

20070108162 - Implant surface preparation: The surface of a device that is surgically implantable in living bone is prepared. The device is made of titanium with a native oxide layer on the surface. The method of preparation comprises the steps of removing the native oxide layer from the surface of the device and performing further... Agent: Jenkens & Gilchrist, P.C.

20070108163 - Stamper, imprinting method, and method of manufacturing an information recording medium: A stamper has stamper-side concave/convex patterns formed thereupon and is capable of manufacturing an information recording medium on which data track patterns and servo patterns are formed by concave/convex patterns. A plurality of types of convex parts with different heights from a reference plane, which is set between a front... Agent: Greenblum & Bernstein, P.L.C

20070102396 - Method of making a circuitized substrate: A method of making a circuitized substrate. A conductive layer having a substantially planar upper surface is formed on and in direct mechanical contact with an upper surface of a substrate. A portion of the conductive layer is removed to form an interim side wall in the conductive layer. A... Agent: Schmeiser, Olsen & Watts

20070102397 - Method for printing contacts on a substrate: A method for printing contacts utilizes photolithographic pattern reversal. A negative of the contact is printed on a resist layer. Unexposed portions of the resist layer are stripped to expose a first layer. The first layer is etched to remove exposed portions of the first layer not covered by the... Agent: Slater & Matsil LLP

20070102398 - Low cost antenna array fabrication technology: Methods are provided for producing large volumes of small antenna arrays. In one embodiment, the method comprises the steps of creating an antenna array pattern as a computer file, printing the created pattern onto the surface of a suitable transfer paper, placing the printed image surface in contact with the... Agent: Mcnees Wallace & Nurick LLC

20070102399 - Method and apparatus for manufacturing a semiconductor device, control program and computer-readable storage medium: A method for manufacturing a semiconductor device, includes a plasma etching process for performing a plasma etching on a substrate to be processed at least having a silicon nitride film, an antireflection film and a photo resist with an opening laminated on a silicon substrate in said order from the... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070102400 - Systems and methods for processing microfeature workpieces: Systems and methods for processing microfeature workpieces are disclosed herein. In one embodiment, the system comprises a processing chamber having a workpiece processing site configured to receive a microfeature workpiece and a main inlet through which a processing fluid can flow into the processing chamber. The system further comprises a... Agent: Perkins Coie LLP Patent-sea

20070095786 - Selective reactive ion etching of wafers: The invention comprises a device for assisting in the selective reactive ion etching of wafers comprising, a graphite base plate including an opening for housing a wafer, and a plurality of graphite strips that can be arranged over the graphite base plate to select a site of a wafer housed... Agent: Harness, Dickey, & Pierce, P.l.c

20070095787 - Selective reactive ion etching of wafers: Methods of etching a dielectric layer and a cap layer over a conductor to expose the conductor are disclosed. In one embodiment, the methods include the use of a silicon dioxide (SiO2) etching chemistry including octafluorocyclobutane (C4F8) and a titanium nitride (TiN) etching chemistry including tetrafluoro methane (CF4). The methods... Agent: Hoffman, Warnick & D'alessandro LLC

20070095789 - Method for automatic determination of semiconductor plasma chamber matching and source of fault by comprehensive plasma monitoring: A method and apparatus for automatic determination of semiconductor plasma chamber matching a source of fault are provided. Correlated plasma attributes are measured for process used for calibration both in a chamber under study and in a reference chamber. Principal component analysis then is performed on the measured correlated attributes... Agent: Patent Counsel Applied Materials, Inc.

20070095788 - Method of controlling a chamber based upon predetermined concurrent behavoir of selected plasma parameters as a function of selected chamber paramenters: The invention involves a method of processing a workpiece on workpiece support pedestal in a plasma reactor chamber in accordance with user-selected values of plural (i.e., N) plasma parameters by controlling plural chamber parameters. The plasma parameters may be selected from of a group including ion density, wafer voltage, etch... Agent: Robert M. Wallace Law Office Of Robert M. Wallace

20070095790 - Surface bonding in halogenated polymeric components: Etching the surface (activating the surface) of a halogenated polymer component with an electron beam generates a set of free radical sites in polymeric chains of the surface that sustain for at least 4 hours in an inert environment. The inert environment is provided by a noble gas, nitrogen, a... Agent: Freudenberg-nok General Partnership Legal Department

20070095791 - Substrate processing apparatus and substrate processing method: A substrate treatment apparatus that treats a substrate under treatment has an interface section, a substrate loading/unloading section, a reduced pressure atmosphere conveyance chamber, and an exposure treatment chamber. The interface section has a conveyance mechanism that can freely load and unload the substrate under treatment from another device into... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.