Etching a substrate: processes inventions 04/07

20070090085 - Piezoelectric device and method of manufacturing the device: A piezoelectric device includes a substrate, a buffer layer on the substrate, a lower electrode layer on the buffer layer, a piezoelectric layer on the lower electrode layer, and an upper electrode layer on the piezoelectric layer. The piezoelectric layer has a base portion extending outwardly at its lower portion... Agent: Ratnerprestia

20070090084 - Reclaim method for extreme ultraviolet lithography mask blank and associated products: A reclaim method for an extreme ultraviolet mask blank and associated products are generally described. In this regard, according to one example embodiment, a reclaim method comprises removing an outer capping layer from a multilayer (ML) stack, the ML stack having been deposited on an inner capping layer, removing the... Agent: Blakely Sokoloff Taylor & Zafman

20070090086 - Two-layer flexible printed wiring board and method for manufacturing the two-layer flexible printed wiring board: An object of the present invention is to provide a flexible printed wiring board, excellent in folding ability, obtained from a flexible copper-clad laminate using an electro-deposited copper foil. In order to achieve the object, there is provided a two-layer flexible printed wiring board having a wiring, formed by etching... Agent: The Webb Law Firm, P.C.

20070090087 - Method of forming patterns and method of manufacturing magnetic recording media: According to one embodiment, a method of forming patterns is provided, in which the method including forming a resist on an underlying material, pressing a stamper having patterns of protrusions and recesses, sidewalls of which protrusions are tapered, onto the resist to form a patterned resist having patterns of protrusions... Agent: Pillsbury Winthrop Shaw Pittman, LLP

20070090088 - Methods and systems for laser processing: The described embodiments relate to slotted substrates. One exemplary method forms a feature into a substrate, at least in part, by directing a laser beam at the substrate. During at least a portion of said directing, the method supplies a conductive material proximate the substrate.... Agent: Hewlett Packard Company

20070090089 - Method to trim and smooth high index contrast waveguide structures: Formation, through etching, of structures whose minimum width is less than can be achieved by optical means alone has been achieved by inserting a layer of sandwiching material between the photoresist (or hard mask if used) and the structure. By adjustment of the relative etch rates of this layer and... Agent: Saile Ackerman LLC

20070090090 - Dry etching method: A surface treatment method is provided, wherein the ratio of the etching rate of a lower resist of a multilayer resist film used for forming a fine pattern to that of an inorganic intermediate layer thin film serving as a mask to control the dimension of the pattern, that is,... Agent: Antonelli, Terry, Stout & Kraus, LLP

20070090091 - Method for controlling uniformity of thin films fabricated in processing systems: A method for spatial uniformity control in thin film processing is devised which is applicable to any film quality (thickness, composition, microstructure, electrical properties, etc.) as well as to all deposition systems (CVD, PVD, etch, ALD, etc.) where the substrate is rotated to improve uniformity of the deposited thin films.... Agent: Rosenberg, Klein & Lee

20070090092 - Method and device for removing layers in some areas of glass plates: Substrates with a coating, in particular a metal-containing coating, are freed of coating in some regions, in particular in the edge region, with the aid of plasma directed onto the coated side of the substrate. The width of the region in which the coating is removed may be set such... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070090093 - Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, control program and computer storage medium: Photoresist film is used as a mask, plasma etching of a SiO2 film is selectively performed to a photoresist film, and a hole is formed. An etching gas comprising unsaturated fluorocarbon gas containing oxygen expressed with CxFyO (y/x is 1-1.5 at an integer in x, as for 4 or 5,... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070090094 - Cmp of copper/ruthenium substrates: The invention provides a method of chemically-mechanically polishing a substrate. A substrate comprising ruthenium and copper is contacted with a chemical-mechanical polishing system comprising a polishing component, hydrogen peroxide, an organic acid, at least one heterocyclic compound comprising at least one nitrogen atom, and water. The polishing component is moved... Agent: Steven Weseman Associate General Counsel, I.p.

20070084823 - Method of manufacturing double-sided printed circuit board: The present invention provides a method of manufacturing a double-sided printed circuit board. An insulation substrate is first formed by creating a plurality of through holes on a Copper Clad Laminate (CCL) whose copper foil surface has been removed. Next, an electro-less copper layer is plated on the substrate for... Agent: North America Intellectual Property Corporation

20070084824 - Thermal inkjet printhead processing with silicon etching: A method of etching the trench portions of a thermal inkjet printhead using a robust mask that precisely defines the area of the substrate surface to be etched and that protects the adjacent drop generator components from damaging exposure to the silicon etchant. The process in accordance with the present... Agent: Hewlett-packard Company Intellectual Property Administration

20070084825 - Spin-on coater, rotation processing method and color-filter fabricating method: A spin-on coater comprises: a turntable that supports thereon and rotates a substrate to be processed; a rotation-drive section that rotatively drives the turntable; and an eccentric slide mechanism that moves a center of the substrate from a center point of rotation up to an eccentric point distant from the... Agent: Birch Stewart Kolasch & Birch

20070084826 - Method of forming high aspect ratio apertures: A plasma etch process for etching a dielectric material employing two primary etchants at low flows and pressures, and a relatively low temperature environment within the etch chamber. The two primary etchant gases are CHF3 and CH2F2, delivered at flow rates on the order of between about 10 sccm and... Agent: Trask Britt, P.C./ Micron Technology

20070084828 - Polishing composition for a semiconductor substrate: A polishing composition for a semiconductor substrate comprising dihydroxyethylglycine, ceria particles, a dispersant, and an aqueous medium, wherein the ceria particles are contained in an amount of from 2 to 22% by weight of the polishing composition, and the dispersant is contained in an amount of from 0.001 to 1.0%... Agent: Birch Stewart Kolasch & Birch

20070084827 - Semiconductor processing: Semiconductor processing and equipment are disclosed. The semiconductor equipment and processing provide semiconductor wafers with reduced defects.... Agent: Rohm And Haas Electronic Materials LLC

20070084829 - System for processing a workpiece: A system for processing a workpiece includes a process head assembly and a base assembly. The process head assembly has a process head and an upper rotor. The base assembly has a base and a lower rotor. The base and lower rotor have magnets wherein the upper rotor is engageable... Agent: Perkins Coie LLP/semitool

20070080131 - Spatial light modulator: A high contrast spatial light modulator for display and printing is fabricated by coupling a high active reflection area fill-ratio and non-diffractive micro-mirror array with a high electrostatic efficiency and low surface adhesion control substrate.... Agent: Fish & Richardson P.C.

20070080135 - Method for manufacturing an inkjet nozzle that incorporates heater actuator arms: A method is provided for manufacturing an inkjet nozzle. The method includes the step of depositing a plastics material layer on a substrate incorporating heater actuator circuitry. The plastics material layer is etched to form a nozzle rim defining an ink port through which ink can be ejected and a... Agent: Silverbrook Research Pty Ltd

20070080134 - Method of fabricating inkjet nozzle chambers having filter structures: A method of fabricating a plurality of inkjet nozzles on a substrate, each nozzle comprising a nozzle chamber having a roof spaced apart from said substrate and sidewalls extending from said roof to said substrate, one of said sidewalls having a chamber entrance for receiving ink from at least one... Agent: Silverbrook Research Pty Ltd

20070080132 - Method of fabricating inkjet nozzle chambers having sidewall entrance: A method of fabricating a plurality of inkjet nozzles on a substrate, each nozzle comprising a nozzle chamber having a roof spaced apart from said substrate and sidewalls extending from said roof to said substrate, one of said sidewalls having a chamber entrance for receiving ink from an ink conduit... Agent: Silverbrook Research Pty Ltd

20070080133 - Method of fabricating inkjet nozzles having associated ink priming features: A method of fabricating a plurality of inkjet nozzles on a substrate, each nozzle comprising a nozzle chamber having a roof spaced apart from said substrate and sidewalls extending from said roof to said substrate, said chamber having an entrance for receiving ink from at least one ink inlet defined... Agent: Silverbrook Research Pty Ltd

20070080136 - Etching method and etching equipment: The invention provides an etching method for realizing trench etching without causing any damages to the side walls of the trench while maintaining a high-etching rate. The plasma etching method relates to forming a groove or a hole by forming a silicon trench to a silicon substrate or a silicon... Agent: Antonelli, Terry, Stout & Kraus, LLP

20070080138 - Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters: The invention involves a method of characterizing a plasma reactor chamber through the behavior of many selected plasma parameters as functions of many selected chamber parameters. The plasma parameters may be selected from a group including ion density, wafer voltage, etch rate and wafer current or other plasma parameters. The... Agent: Robert M. Wallace Law Office Of Robert M. Wallace

20070080137 - Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure: The invention involves a method of characterizing a plasma reactor chamber through the behavior of plasma parameters selected from a group comprising ion density, wafer voltage, etch rate, wafer current, as functions of chamber parameters of source power, bias power and chamber pressure. The method begins by performing two steps... Agent: Robert M. Wallace Law Office Of Robert M. Wallace

20070080139 - Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure: The invention involves a method of processing a workpiece on workpiece support pedestal in a plasma reactor chamber in accordance with user-selected values of plural plasma parameters by controlling chamber parameters of source power, bias power and chamber pressure. The plasma parameters may be selected from of a group including... Agent: Robert M. Wallace Law Office Of Robert M. Wallace

20070080140 - Plasma reactor control by translating desired values of m plasma parameters to values of n chamber parameters: The invention concerns a method of processing a wafer in a plasma reactor chamber by controlling plural chamber parameters in accordance with desired values of plural plasma parameters. The method includes concurrently translating a set of M desired values for M plasma parameters to a set of N values for... Agent: Robert M. Wallace Law Office Of Robert M. Wallace

20070080141 - Low-voltage inductively coupled source for plasma processing: A chamber for plasma processing a substrate. The chamber includes one or more chamber walls defining a plasma processing region and an RF transmitting device configured to transmit RF energy to the plasma processing region. The RF transmitting device comprises a first coil portion and a second coil portion connected... Agent: Patterson & Sheridan, LLP

20070080142 - Method and apparatus for forming a planarizing pad having a film and texture elements for planarization of microelectronic substrates: A planarizing pad for planarizing a microelectronic substrate, and a method and apparatus for forming the planarizing pad. In one embodiment, planarizing pad material is mixed with compressed gas to form a plurality of discrete elements that are distributed on a film support material. The film support material is supported... Agent: Perkins Coie LLP Patent-sea

20070075033 - Method of manufacturing an electrostatic actuator: An electrostatic actuator for increasing a swing (deflection angle) of a movable structure includes a laminate substrate in which a thin film silicon layer is formed on a silicon substrate through a buried insulating film and a torsion beam movable structure constructed with the thin film silicon layer. A potential... Agent: Posz Law Group, PLC

20070075034 - Electronic device and method of manufacturing thereof: The electronic device comprises a body (40) of electrically insulating material that is provided with a through-hole or cavity. In the cavity or through-hole an electric component (20) is present. This component is attached to the body through an attachment layer (13). The surface of this attachment layer is provided... Agent: Philips Intellectual Property & Standards

20070075035 - Method for microstructuring surfaces of a workpiece and its use: A method for microstructuring surfaces of a workpiece includes the following steps: a) placing a workpiece to be structured into a liquid medium; b) providing a light source for producing a cavitation bubble in the liquid medium; and c) producing a cavitation bubble using the light source in such a... Agent: Kenyon & Kenyon LLP

20070075037 - Dimension monitoring method and system: A system and method are disclosed for monitoring a dimensional change of a pattern for an object having a transparent layer exposed through the pattern and a non-transparent pattern laminated therewith. According to the method, a first beam is projected to the pattern. A second beam resulted from the first... Agent: L. Howard Chen, Esq. Kirkpatrick & Lockhart Preston Gates Ellis LLP

20070075036 - Method and apparatus for measuring plasma density in processing reactors using a short dielectric cap: An apparatus for measuring plasma density of a plasma processing reactor, comprises a stationary compact probe having a short dielectric cap with a short coaxial cable inserted therein and having an open metal antenna tip. The probe can be utilized to determine resonant plasma frequency near its tip location. Two... Agent: Dale S. Lazar Dla Piper Rudnick Gray Cary US LLP

20070075039 - Plasma processing method and apparatus: In a state that a plate-shaped insulator is disposed adjacent to a plate-shaped electrode, a discharge gas containing an inert gas is supplied to a vicinity of a processing object from one gas exhaust port located nearer from the plate-shaped electrode, out of at least two-line gas exhaust ports which... Agent: Wenderoth, Lind & Ponack L.L.P.

20070075038 - Vertical profile fixing: A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the... Agent: Beyer Weaver LLP

20070075040 - Composition and method for planarizing surfaces: The invention provides compositions and methods for planarizing or polishing a surface. One composition comprises about 0.01 wt. % to about 20 wt. % α-alumina particles, wherein the α-alumina particles have an average diameter of 200 nm or less, and 80% of the α-alumina particles have a diameter of about... Agent: Steven Weseman Associate General Counsel, I.p.

20070075041 - Polishing slurry, method of treating surface of gaxin1-xasyp1-y crystal and gaxin1-xasyp1-y crystal substrate: The present polishing slurry is a polishing slurry for chemically mechanically polishing a surface of a GaxIn1-xAsyP1-y crystal (0≦x≦1, 0≦y≦1), characterized in that this polishing slurry contains abrasive grains formed of SiO2, this abrasive grain is a secondary particle in which a primary particle is associated, and a ratio d2/d1... Agent: Mcdermott Will & Emery LLP

20070075042 - Stabilizer-fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method: A composition and an associated method for chemical mechanical planarization (or other polishing) are described. The composition includes a stabilizer-metal-vinyl pyridine polymer surface-modified colloidal abrasive (e.g., silica) and an oxidizing agent (e.g., hydrogen peroxide), where the metal is a Fenton's reaction metal. The method includes applying the composition to a... Agent: Air Products And Chemicals, Inc. Patent Department