Etching a substrate: processes inventions 03/07

20070068898 - Multi-level etching method and product: A method and product of etching a multi-level substrate, the method comprising the steps of printing an image on a substrate having two different surface levels with an ink jet printer containing an ink jettable etchant resist, curing the ink jettable etchant resist on the substrate to leave an etchant... Agent: Thomas N. Phung Jacobson And Johnson

20070068900 - Apparatus and methods to remove films on bevel edge and backside of wafer: Improved mechanisms of removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and etch byproducts on substrate backside and chamber interior is provided to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. An exemplary plasma etch processing chamber configured... Agent: Martine Penilla & Gencarella, LLP

20070068899 - Apparatus for the removal of an edge polymer from a substrate and methods therefor: An apparatus generating a plasma for removing an edge polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a... Agent: Ipsg, P.C.

20070068901 - Composition and method for enhancing pot life of hydrogen peroxide-containing cmp slurries: A composition suitable for copper chemical-mechanical polishing (CMP) comprises an abrasive powder, such as a silica and/or alumina abrasive, in a liquid carrier. The composition has a transition metal content of less than about 5 parts per million (ppm), preferably less than about 2 ppm. Preferably the composition contains less... Agent: Steven Weseman Associate General Counsel, I.p.

20070068902 - Polishing composition and polishing method: A polishing composition contains abrasive grain such as colloidal silica, acid such as citric acid and orthophosphoric acid, an oxidizing agent such as hydrogen peroxide, a compound selected from a group consisting of azoles and its derivatives such as benzotriazole. The polishing composition is suitably used for polishing a magnetic... Agent: Vidas, Arrett & Steinkraus, P.A.

20070062908 - Process for producing printed wiring board: Disclosed is a process for producing a printed wiring board, comprising a step of treating a laminated film having a copper layer laminated on at least one surface of an insulating film, with a first etching solution containing cupric chloride or ferric chloride as a main constituent to reduce the... Agent: The Webb Law Firm, P.C.

20070062909 - Method of improving corrosion resistance of stainless steel surfaces by a process of passivation: Described is a space-conserving integrated fluid delivery system particularly useful for gas distribution in semiconductor processing equipment. The system includes integrated fluid flow network architecture, and may include, in addition to a layered substrate containing fluid flow channels, various fluid handling and monitoring components. The layered substrate is diffusion bonded.... Agent: Shirley L. Church, Esq.

20070062910 - Complex cmp process and fabricating methods of sti structure and interconnect structure: A complex CMP process is described. A target film is coarsely polished using a first polishing platen in a first CMP machine. The remaining target film is then fine polished using successively a second polishing platen and a third polishing platen in a second CMP machine that is different from... Agent: J C Patents, Inc.

20070056924 - Printed wiring board and method for manufacturing the same: A printed circuit board is by formed by laminating an interlaminar insulating layer on a conductor circuit of a substrate, in which the conductor circuit is comprised of an electroless plated film and an electrolytic plated film and a roughened layer is formed on at least a part of the... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070056929 - Plasma etching apparatus and plasma etching method: A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying... Agent: Antonelli, Terry, Stout & Kraus, LLP

20070056928 - Plasma processing method and plasma processing device: The invention provides a plasma processing method and plasma processing device for manufacturing semiconductor devices in which the number of foreign particles being adhered to the wafer is reduced greatly and the yield is improved. In a plasma processing device having a plasma source capable of controlling plasma distribution, the... Agent: Antonelli, Terry, Stout & Kraus, LLP

20070056927 - Process and system for etching doped silicon: A process and system for anisoptropically dry etching through a doped silicon layer is described. The process chemistry comprises a nitrogen containing gas and a fluorocarbon gas. For example, the process chemistry comprises CF4, C4F8 and N2.... Agent: Dla Piper US LLP

20070056926 - Process and system for etching doped silicon using sf6-based chemistry: A process and system for anisoptropically dry etching through a doped silicon layer is described. The process chemistry comprises SF6 and a fluorocarbon gas. For example, the fluorocarbon gas can include CxFy, where x and y are integers greater than or equal to unity, for example, C4F8.... Agent: Dla Piper US LLP

20070056925 - Selective etch of films with high dielectric constant with h2 addition: A method for selectively etching a high k layer with respect to a silicon based material is provided. The high k layer is placed into an etch chamber. An etchant gas is provided into the etch chamber, wherein the etchant gas comprises H2. A plasma is generated from the etchant... Agent: Beyer Weaver LLP

20070056930 - Polysilicon etching methods: Polysilicon etching methods are disclosed that employ a gas flow including perfluorocyclopentene (C5F8) and nitrogen trifluoride (NF3). The etching methods achieved a substantially vertical profile and smoother surfaces, and may achieve a 3sigma variation as low as 3.0 nm.... Agent: Hoffman, Warnick & D'alessandro LLC

20070051693 - Microetching solution: The present invention related to an improved microetching solution and a method of using the improved composition for roughening a metal surface and increasing the adhesion strength of a metal layer to a subsequently applied layer. The microetching composition is an aqueous solution comprising cupric ion source, a pyridine derivative,... Agent: John L. Cordani Carmody & Torrance LLP

20070051694 - Printed wiring board and method for manufacturing the same: A printed circuit board is by formed by laminating an interlaminar insulating layer on a conductor circuit of a substrate, in which the conductor circuit is comprised of an electroless plated film and an electrolytic plated film and a roughened layer is formed on at least a part of the... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.c.

20070051695 - Printed wiring board and method for manufacturing the same: A printed circuit board is by formed by laminating an interlaminar insulating layer on a conductor circuit of a substrate, in which the conductor circuit is comprised of an electroless plated film and an electrolytic plated film and a roughened layer is formed on at least a part of the... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.c.

20070051696 - Method for reducing critical dimension and semiconductor etching method: A method of reducing critical dimension is provided. A dielectric layer is formed on a substrate. Then, a patterned photoresist is formed on the dielectric layer to expose part of the dielectric layer, wherein the patterned photoresist has a first line width. An etching process is performed to remove the... Agent: Jianq Chyun Intellectual Property Office

20070051697 - Processes and materials for step and flash imprint lithography: A method of forming an image. The method includes: a transfer layer on a substrate; forming on the transfer layer, an etch barrier layer; pressing a template having a relief pattern into the etch barrier layer; exposing the etch barrier layer to actinic radiation forming a cured etch barrier layer... Agent: Schmeiser, Olsen & Watts

20070051699 - Methods of removing metal contaminants from a component for a plasma processing apparatus: Methods of removing metal contaminants from a component for a plasma processing apparatus are provided. The method includes cleaning a surface of the component with a cleaning liquid that includes at least one acid selected from oxalic acid, formic acid, acetic acid, citric acid, and mixtures thereof.... Agent: Buchanan, Ingersoll & Rooney Pc

20070051698 - Photoresist trimming process: A photoresist trimming process is described. An etcher equipped with an etching chamber, a wafer holder, a TCP source and a TCP window is provided. After plasma is generated in the etching chamber, the etching chamber is heated without a wafer therein, and the temperature at the TCP window is... Agent: Jianq Chyun Intellectual Property Office

20070051700 - Composition for cleaning substrates and method of forming gate using the composition: Provided are a substrate cleaning composition including a fluoride compound, an inorganic acid, and deionized water, and a method of forming a gate using the same. The fluoride compound is one of HF, NH4F, and a combination thereof, and the inorganic acid is one of HNO3, HCI, HCIO4, H2SO4, or... Agent: Volentine Francos, & Whitt Pllc

20070045226 - Technique for reducing silicide defects by reducing deleterious effects of particle bombardment prior to silicidation: By reducing the effect of particle bombardment during the sequence for forming a metal silicide in semiconductor devices, the defect rate and the metal silicide uniformity may be enhanced. For this purpose, the metal may be deposited without an immediately preceding sputter etch process, wherein, in a particular embodiment, an... Agent: Williams, Morgan & Amerson

20070045227 - Method of stripping photoresist: A method of stripping photoresist is provided. First, a first dielectric layer including a plurality of contact structures is provided. Then, a barrier layer is formed over the first dielectric layer. Thereafter, a second dielectric layer is formed over the barrier layer. Next, a patterned photoresist layer is formed over... Agent: Jianq Chyun Intellectual Property Office

20070045228 - Etching depth measuring device, etching apparatus, and etching depth measuring method: An etching depth measuring device for measuring the etching depth of an object to be processed, when etching the object to be processed by using active species present in a plasma, the etching depth measuring device comprising: a chamber in which is formed an introduction port for introducing a part... Agent: Oliff & Berridge, PLC

20070045229 - System and method for the manufacture of surgical blades: A method for manufacturing surgical blades from either a crystalline or poly-crystalline material, preferably in the form of a wafer, is disclosed. The method includes preparing the crystalline or poly-crystalline wafers by mounting them and machining trenches into the wafers. The methods for machining the trenches, which form the bevel... Agent: Roylance, Abrams, Berdo & Goodman, L.L.P.

20070045230 - Methods for independently controlling one or more etching parameters in the manufacture of microfeature devices: Methods for independently controlling one or more etching parameters in the manufacture of microfeature devices are disclosed herein. One particular embodiment of such a method comprises fabricating a microfeature device on a microfeature workpiece. The workpiece includes a first portion with features having first critical dimensions and a second portion... Agent: Perkins Coie LLP Patent-sea

20070045231 - Resist removing method and resist removing apparatus: In an inventive resist removing method, sulfuric acid and hydrogen peroxide water are supplied to a surface of a substrate to remove a resist from the substrate surface. Thereafter, hydrogen peroxide water is supplied to the substrate surface to remove the sulfuric acid from the substrate surface.... Agent: Ostrolenk Faber Gerb & Soffen

20070045234 - Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride: The present invention provides an aqueous composition useful for polishing silica and silicon nitride on a semiconductor wafer comprising by weight percent 0.01 to 5 carboxylic acid polymer, 0.02 to 6 abrasive, 0.01 to 10 polyvinylpyrrolidone, 0 to 5 cationic compound, 0 to 5 zwitterionic compound and balance water, wherein... Agent: Rohm And Haas Electronic Materials Cmp Holdings, Inc.

20070045233 - Polishing liquid composition: A polishing liquid composition is applicable as a means of forming embedded metal interconnections on a semiconductor substrate. In a surface to be polished comprising an insulating layer and a metal interconnection layer, the polishing liquid composition is capable of maintaining a polishing speed of the metal layer, of suppressing... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070045232 - Wafer polishing method and polished wafer: A wafer substrate is polished by disposing the wafer substrate between an abrasive cloth on a polishing platen and a plate, and relatively rotating the polishing platen and the plate for mirror polishing the surface of the wafer substrate with the abrasive cloth. A liquid is fed onto the plate... Agent: Westerman, Hattori, Daniels & Adrian, LLP