Etching a substrate: processes inventions 01/07

20070017894 - Method of manufacturing liquid discharge head: The method of manufacturing a recording head has a flow path wall forming step of forming flow path walls on a substrate having energy generating elements formed thereon, an imbedded material depositing step of depositing an imbedded material between the flow path walls and on a top of each flow... Agent: Fitzpatrick Cella Harper & Scinto

20070017895 - Mask, mask chip, manufacturing method of mask, manufacturing method of mask chip, and electronic device: A mask in which a plurality of mask chips are connected to one another via a supporting member, includes: a plurality of first opening sections that are provided in the plurality of mask chips and that correspond to a pattern to be formed; a cutout section provided at at least... Agent: Harness, Dickey & Pierce, P.L.C

20070017896 - Method for controlling a process for fabricating integrated devices: A method for controlling a process for fabricating integrated devices on a substrate. The method includes ex-situ and in-situ measurements of pre-etch and post-etch dimensions for structures formed on the substrate and uses the results of the measurements to adjust process recipes and to control the operational status of etch... Agent: MoserIPLaw Group / Applied Materials, Inc.

20070017897 - Multi-frequency plasma enhanced process chamber having a toroidal plasma source: A method and apparatus for processing a substrate includes a reactor chamber having a chamber wall and containing a substrate support. An electrode overlies the substrate and is spaced apart from the substrate support. One or more plasma sources maintains plasma in the reactor in one or more toroidal paths... Agent: MoserIPLaw Group / Applied Materials, Inc.

20070017898 - Method and apparatus for photomask plasma etching: A method and apparatus for etching photomasks is provided herein. In one embodiment, a method for etching a photomask includes placing a reticle upon a pedestal of a processing chamber, forming a plasma from a process gas, preferentially allowing neutrally charged radicals to pass through the plate relative to ions... Agent: Patterson & Sheridan, LLP Applied Materials Inc

20070017899 - Method of controlling the critical dimension of structures formed on a substrate: The present invention provides a method of patterning a substrate, the method including, inter alia, forming a multi-layered structure on the substrate formed from first, second and third materials. The first, second and third materials are exposed to an etch chemistry, with the first and second materials having a common... Agent: Molecular Imprints

20070017900 - Semiconductor wafer and process for producing a semiconductor wafer: A semiconductor wafer has an edge region with no defects larger than or equal to 0.3 μm. The wafers are produced by a process, comprising (a) providing a semiconductor wafer having a rounded and etched edge; (b) polishing the edge of the semiconductor wafer, in which step the semiconductor wafer,... Agent: Brooks Kushman P.C.

20070017901 - Method and apparatus for etching disk-like member: Disclosed are a method and apparatus for etching disk-shaped members, especially a method and apparatus for etching semiconductor wafers. In a method wherein wafers (30) are rotated and etched in an etching chamber (12) which is filled with an etching solution, a non-rotating cell plate (26) is disposed between two... Agent: Welsh & Katz, Ltd

20070017902 - Method for the chemical treatment of copper surfaces for the removal of carbonaceous residues: A method for the treatment of copper surfaces on a semiconductor wafer for the removal of carbonaceous residues, these being obtained during a chemical-mechanical polishing operation, includes a water rinsing of the wafer followed by a chemical rinsing of the wafer using a solution containing a corrosion inhibitor and an... Agent: Jenkens & Gilchrist, PC

20070017903 - Method for treating an etching solution: The present etching system includes a processing tank with an etching solution containing silicon, a cooling tank, a pre-heating tank, a first pipe for transferring the etching solution from the processing tank to the cooling tank, a second pipe for transferring the etching solution from the cooling tank to the... Agent: Oliff & Berridge, PLC

20070012652 - Imprint lithography utilizing silated acidic polymers: The present invention processes a synthesis for a silated acidic polymer by a copolymerization of several monomers including one acidic monomer and one silated monomer. The silated acidic polymer is used as a resist barrier in imprint lithography and is easily removed by an environmental basic aqua-solution during the stripping... Agent: Troxell Law Office PLLC

20070012654 - Mems switch and method for manufacturing the same: A MEMS switch includes a lower substrate having a signal line on an upper surface of the lower substrate; an upper substrate, having a cavity therein, disposed apart from the upper surface of the lower substrate by a distance, and having a membrane layer on a lower surface of the... Agent: Sughrue Mion, PLLC

20070012653 - Method of making an x-y axis dual-mass tuning fork gyroscope with vertically integrated electronics and wafer-scale hermetic packaging: A method for making an angular velocity sensor having two masses which are laterally disposed in an X-Y plane and indirectly connected to a frame is provided. The two masses are linked together by a linkage such that they necessarily move in opposite directions along Z. Angular velocity of the... Agent: Sawyer Law Group LLP

20070012655 - Micro-package, multi-stack micro-package, and manufacturing method therefor: A micro package, a multi-stack micro package, and a manufacture method therefor are provided. A micro package according to the present invention includes a device substrate for mounting a devices, being a circuit module; a protection cap for protecting the device; bonding substances which, formed by patterning on predetermined areas... Agent: Sughrue Mion, PLLC

20070012656 - Selective chemical etch method for mram soft layers: An etching process is employed to selectively pattern the exposed magnetic film layer of a magnetic thin film structure. The magnetic structure to be etched includes at least one bottom magnetic film layer and at least one top film layer which are separated by a tunnel barrier. The etching process... Agent: Scully Scott Murphy & Presser, PC

20070012657 - Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof: A corrosion resistant component of a plasma chamber includes a liquid crystalline polymer. In a preferred embodiment, the liquid crystalline polymer (LCP) is provided on an aluminum component having an anodized or non-anodized surface. The liquid crystalline polymer can also be provided on an alumina component. The liquid crystalline polymer... Agent: Buchanan, Ingersoll & Rooney PC

20070012658 - Pvd component and coil refurbishing methods: A used PVD component refurbishing method includes providing a used PVD component, such as a RF coil (120), having a layer deposited on a component surface and first etching the deposited layer using a first acid-comprising etchant. After the first etching, the method includes entraining abrasive particles in a flow... Agent: James E. Lake Wells St. John

20070012659 - High aspect ratio etch using modulation of rf powers of various frequencies: A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency,... Agent: Beyer Weaver & Thomas, LLP

20070012660 - Cluster tool with integrated metrology chamber for transparent substrates: The embodiments of the invention relate to a method and apparatus for measuring the etch depth in a semiconductor photomask processing system. In one embodiment, a method for etching a substrate includes etching a transparent substrate in an etch chamber coupled to a vacuum transfer chamber of a processing system,... Agent: Patterson & Sheridan, LLP

20070012661 - Silicon nitride passivation layers having oxidized interface: A method of forming a passivation film on a semiconductor substrate is provided and includes forming a first silicon nitride containing layer on the substrate, oxidizing the surface of the first silicon nitride containing layer, and forming a second silicon nitride containing layer on the oxidized surface of the first... Agent: Dinsmore & Shohl LLP One Dayton Centre

20070012662 - Solution for wet treatment of hafnium containing materials, use of the solution and a wet treatment process: It is one object to devise a solution which is suitable for a wet treatment of Hafnium containing high-k materials. Furthermore, it is an object to devise a use of this solution in the field of semiconductor device manufacturing. It is also an objective of the invention to devise a... Agent: Slater & Matsil LLP

20070007237 - Method for self-assembling microstructures: A method for self-assembling microstructures onto a substrate includes using a bonding material to make the microstructure assembled onto the substrate by a physical attraction force. The microstructures are self-aligned with the substrate, and further are permanently fixed on and electrically connected with the substrate by the solder bumps between... Agent: Birch Stewart Kolasch & Birch

20070007238 - Simplified etching technique for producing multiple undercut profiles: A process for producing multiple undercut profiles in a single material. A resist pattern is applied over a work piece and a wet etch is performed to produce an undercut in the material. This first wet etch is followed by a polymerizing dry etch that produces a polymer film in... Agent: Trask Britt, P.C.

20070007239 - Method for improvement of performance of si thin film anode for lithium rechargeable battery: The present invention relates to a method for improving charge/discharge cycle characteristics of a lithium secondary battery using a Si based anode active material, the method comprising surface-treating a surface of an anode current collector to have specific morphology, and preferably vapor-depositing a silicon film, as the anode active material... Agent: Cantor Colburn, LLP

20070007240 - Wafer-level, polymer-based encapsulation for microstructure devices: Disclosed herein is a method of fabricating a device having a microstructure. The method includes forming a connector on a semiconductor substrate, coating the connector with a polymer layer, and immersing the semiconductor substrate and the coated connector in an etchant solution to form the microstructure from the semiconductor substrate... Agent: Marshall, Gerstein & Borun LLP

20070007241 - Methods of making and modifying porous devices for biomedical applications: Etchant solutions for making porous semiconductor materials. Also disclosed are methods of making porous semiconductor materials, post etch treatments, and porous semiconductor materials produced by these methods.... Agent: Nixon Peabody LLP - Patent Group

20070007242 - Method and system for producing crystalline thin films with a uniform crystalline orientation: System and method generating a polycrystalline thin film with a particular crystalline orientation for use as thin film transistors, microelectronic devices and the like. In one exemplary embodiment, a polycrystalline silicon thin film that has a substantially uniform crystalline orientation is produced so that its crystals are provided in at... Agent: Baker & Botts

20070007243 - Ion beam etching method and ion beam etching apparatus: An ion beam etching method comprises an etching step of etching an object to be processed with an ion beam extracted by an extraction electrode, and a cooling step of cooling the extraction electrode with an inert gas.... Agent: Oliff & Berridge, PLC

20070007244 - Detection of loss of plasma confinement: A system and method for detecting a loss of plasma confinement. The system includes a plasma chamber that includes a plasma space and a non-plasma space. A plasma apparatus generates a plasma within the plasma space. The non-plasma space surrounds the plasma space and is separated from the plasma space... Agent: Schmeiser, Olsen & Watts

20070007245 - Silicon wafer reclamation method and reclaimed wafer: The present invention is a method for reclaiming a silicon wafer in which a thin film has been formed on its surface, at least, comprising a thin-film removing step for removing the thin film having been formed on the silicon wafer and a mirror-polishing step for mirror-polishing at least one... Agent: Oliff & Berridge, PLC

20070007248 - Compositions and methods for chemical mechanical polishing silica and silicon nitride: in which n is an integer, Y comprises hydrogen or an alkyl group, Z comprises carboxyl, sulfate or oxygen, M comprises nitrogen, phosphorus or a sulfur atom, and X1, X2 and X3 independently comprise substituents selected from the group comprising, hydrogen, an alkyl group and an aryl group.... Agent: Rohm And Haas Electronic Materials Cmp Holdings, Inc.

20070007246 - Manufacture of semiconductor device with cmp: A manufacture method for a semiconductor device, includes the steps of: in CMP for forming STI, (a) polishing the surface of a film formed on a semiconductor substrate until the surface of the film is planarized, by using first abrasive containing cerium dioxide abrasive grains and additive of interfacial active... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20070007247 - Processing method for semiconductor wafer: A processing method for a semiconductor wafer which is generally circular, and which has on the face thereof an annular surplus region present in an outer peripheral edge portion of the face, and a circular device region surrounded by the surplus region, the device region having many rectangular regions defined... Agent: Smith, Gambrell & Russell

20070000860 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device is provided. The method includes: forming an insulation layer over a substrate; forming a hard mask layer over the insulation layer; forming a photoresist pattern over the hard mask layer; forming a polymer over the photoresist pattern to increase a thickness of the... Agent: Blakely Sokoloff Taylor & Zafman

20070000861 - Method and apparatus for manufacturing magnetic recording media: According to one embodiment, a method for manufacturing a magnetic recording medium includes forming patterns having protrusions and recesses of a ferromagnetic material onto a recording track section and a servo section on a substrate, forming a flattening film, a top surface of which is higher than that of the... Agent: Pillsbury Winthrop Shaw Pittman, LLP

20070000862 - Low loss soi/cmos compatible silicon waveguide and method of making the same: A method and structure for reducing optical signal loss in a silicon waveguide formed within a silicon-on-insulator (SOI) structure uses CMOS processing techniques to round the edges/corners of the silicon material along the extent of the waveguiding region. One exemplary set of processes utilizes an additional, sacrificial silicon layer that... Agent: Wendy W. Koba

20070000863 - Method for dry etching fluid feed slots in a silicon substrate: A method of micro-machining a semiconductor substrate to form one or more through slots therein. The semiconductor substrate has a device side and a fluid side opposite the device side. The method includes diffusing a p-type doping material into the device side of the semiconductor substrate in one or more... Agent: Lexmark International, Inc. Intellectual Property Law Department

20070000864 - Piezoelectric material working method: After a resist mask with a predetermined thickness profile is overlaid on a piezoelectric substrate, the substrate is shaped to an objective three-dimensional configuration by dry etching process using an etching gas with a differential etching rate between the piezoelectric substrate and the mask. The thickness profile may be given... Agent: The Webb Law Firm, P.C.

20070000865 - Printing substrate for liquid crystal display, and manufacturing method thereof: The present invention relates to the implementation of minute patterns and thus improving pattern resolution and transcription property. Provided is a printing substrate for a liquid crystal display comprising a transparent insulating substrate, and a material layer for dry etching formed on an upper surface of the transparent insulating substrate,... Agent: Mckenna Long & Aldridge LLP

20070000866 - Patterning and alteration of molecules: The present invention provides a series of methods, compositions, and articles for patterning a surface with multiple, aligned layers of molecules, by exposing the molecules to electromagnetic radiation. In certain embodiments, a single photomask acts as an area-selective filter for light at multiple wavelengths. A single set of exposures of... Agent: Wolf Greenfield & Sacks, PC

20070000868 - Dry etching method: A dry etching method comprises: exposing an etching region of a workpiece to a plasma product of a depositive gas, the depositive gas having a CF group in a reaction chamber; exposing the etching region to a plasma product of an etching gas in the reaction chamber; exposing the etching... Agent: C. Irvin Mcclelland Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070000869 - Etching method in a semiconductor processing and etching system for performing the same: Disclosed is an etching method for semiconductor processing by which a pattern loading phenomenon is reduced. First, plasma is generated while setting a bias power applied to a wafer to zero and applying a source power. After a predetermined time period, an etching process is implemented onto a predetermined layer... Agent: F. Chau & Associates, LLC

20070000870 - Plasma processing method: The present invention is a plasma processing method including: a step of introducing a substrate into a processing container, a metal or metallic compound film being formed on a surface of the substrate; a step of supplying a noble gas and an H2 gas into the processing container; and a... Agent: Smith, Gambrell & Russell

20070000867 - Plasma processing method and apparatus thereof: The amount and area of irradiation of excited species to the surface of a workpiece can be increased, the irradiation can be uniformly performed on the whole surface, and the loss of effective excited species is suppressed, so that the treating performance and efficiency can be remarkably improved. A pulse... Agent: Bacon & Thomas, PLLC

20070000871 - Floor-etching solution: The present invention is directed toward a floor-etching solution comprising a ketone such as 1-methyl-2-pyrrolidinone, a surfactant, and water. The solution further comprises a viscosity such that it may be applied to a surface by spraying, spritzing, or other similar application methods. The solution further comprises an evaporation rate low... Agent: Starkweather & Associates

20070000874 - Method and apparatus for polishing a substrate: The present invention is to provide a method and device for polishing a glass substrate, suitable for polishing a large-sized glass substrate. The device for polishing a substrate is adapted so that a substrate is attached to a film stretched on a frame; the frame is installed on a carrier;... Agent: C. Irvin Mcclelland Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070000872 - Method for chemically mechanically polishing organic film, method of manufacturing semiconductor device, and program therefor: There is proposed a polishing method. The method includes feeding a slurry onto a polishing pad, press-contacting a semiconductor substrate held on a polishing head with the polishing pad, the semiconductor substrate having an organic film thereon, and chemically mechanically polishing the organic film by repeating a sequence of rotation... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20070000873 - Substrate processing method and semiconductor device manufacturing method: There is disclosed a substrate processing method of polishing a peripheral portion of a substrate to-be-processed by sliding a polishing member and the peripheral portion of the substrate to each other to remove a SiN film deposited on the peripheral portion of the substrate. The method includes supplying a solution... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20070000875 - Method and apparatus for assisting laser material processing: A laser machining apparatus includes a nozzle connected to a pressurized gas and liquid reservoir for propelling a fine spray, mist or stream of a liquid such as water at the workpiece to be machined. A laser beam, preferably as may be generated by a UV laser or other source... Agent: Stallman & Pollock LLP