Etching a substrate: processes inventions 12/06

20060289380 - Composite, ordered material having sharp surface features: A method of making a composite material having sharp surface features includes the steps of: making a composite body comprised of a recessive phase and a protrusive phase, the recessive phase having a higher susceptibility to a preselected etchant than the protrusive phase; and treating a surface of the composite... Agent: Ut-battelle, LLC Office Of Intellectual Property

20060289382 - Method and apparatus for manufacturing patterned media: According to one embodiment, a method for manufacturing a patterned media includes forming patterns of a magnetic layer having protrusions and recesses corresponding to tracks, servo zones or data zones on a substrate having a center hole, and spraying gas flow produced by diffusing a liquid gas toward the center... Agent: Pillsbury Winthrop Shaw Pittman, LLP

20060289381 - Mram wet etch method: An etching process is employed to selectively pattern the top magnetic film layer, the tunnel barrier, and the pinned bottom magnetic layer of a magnetic thin film structure. The pinned bottom magnetic film layer has an antiferromagnetic layer or a Ru spacer formed thereunder. The etching process employs various etching... Agent: Scully Scott Murphy & Presser, PC

20060289383 - Composition for removing conductive materials and manufacturing method of array substrate using the same: A composition for removing a conductive material and a manufacturing method of an array substrate using the composition, wherein the composition may include a nitric acid of about 3 to 15 wt %, a phosphoric acid of about 40 to 70 wt %, an acetic acid of about 5 to... Agent: Mckenna Long & Aldridge LLP Song K. Jung

20060289384 - Method and apparatus for performing hydrogen optical emission endpoint detection for photoresist strip and residue removal: Methods for monitoring and detecting optical emissions while performing photoresist stripping and removal of residues from a substrate or a film stack on a substrate are provided herein. In one embodiment, a method is provided that includes positioning a substrate comprising a photoresist layer into a processing chamber; processing the... Agent: MoserIPLaw Group / Applied Materials, Inc.

20060289385 - Plasma etching method and apparatus, control program and computer-readable storage medium storing the control program: A plasma etching method and apparatus, a control program and a computer-readable storage medium storing the control program are provided. The method is provided for performing a plasma etching on a silicon oxide film through an amorphous carbon mask, wherein the plasma etching is performed by using an etching gas... Agent: C. Irvin Mcclelland Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20060289386 - Etchant, method of etching, laminate formed thereby, and device: An etchant including a halogenated salt, such as Cryolite (Na3AlF6) or potassium tetrafluoro borate (KBF4), is provided. The salt may be present in the etchant in an amount sufficient to etch a substrate and may have a melt temperature of greater than about 200 degrees Celsius. A method of wet... Agent: General Electric Company Global Research

20060289387 - Non-aqueous lapping composition and method using same: Lapping compositions which do not comprise water are disclosed, wherein those lapping compositions comprise a non-aqueous fluid, and wherein the lapping compositions are useful during a process to shape the surface of a substrate, wherein that process includes contacting a target surface of the substrate with one or more abrasives... Agent: Dale F. Regelman

20060289388 - Implants with textured surface and methods for producing the same: Compositions and methods are provided for preparing a metal substrate having a uniform textured surface with a plurality of indentations with a diameter in the nanometer and micrometer range. The textured surface is produced by exposing the substrate to an etching fluid comprising a hydrohalic acid and a mixture of... Agent: Nutter Mcclennen & Fish LLP

20060289389 - Poly etch without separate oxide decap: The use of an ammonium hydroxide spike to a hot tetra methyl ammonium hydroxide (TMAH) solution to form an insitu poly oxide decapping step in a polysilicon (poly) etch process, results in a single step rapid poly etch process having uniform etch initiation and a high etch selectivity, that may... Agent: Schwegman, Lundberg, Woessner & Kluth, P.A.

20060283833 - Wiring for display device and thin film transistor array panel with the same, and manufacturing method thereof: A TFT array panel for an LCD includes a substrate, a first signal line and a second signal line that cross each other on the substrate, a TFT that is connected to the first signal line and the second signal line, and a pixel electrode that is connected to the... Agent: Macpherson Kwok Chen & Heid LLP

20060283834 - Method of manufacturing zno substrate from zno crystal formed by hydrothermal synthesis method: Li impurities are removed from a substrate of ZnO formed by a hydrothermal synthesis method. The surface layer of the substrate with Li impurities removed, is etched to planarize the substrate.... Agent: Frishauf, Holtz, Goodman & Chick, PC

20060283835 - Method of operating a plasma reactor chamber with respect to two plasma parameters selected from a group comprising ion density, wafer voltage, etch rate and wafer current, by controlling chamber parameters of source power and bias power: A workpiece is processed in a plasma reactor chamber in accordance with desired values of two plasma parameters selected from a group comprising ion density, wafer voltage, etch rate and wafer current, by controlling chamber parameters of source power and bias power. First, the chamber is characterized by performing the... Agent: Robert M. Wallace Law Office Of Robert M. Wallace

20060283836 - Fabrication and use of polished silicon micro-mirrors: A method of fabricating silicon micro-mirrors includes etching from opposite sides of a silicon wafer with a polished surface on at least one of the opposite sides, to form silicon bars each having a parallelogram-shaped cross-section and including a portion of the polished surface. At least one of the silicon... Agent: Fish & Richardson P.C.

20060283837 - Methods of etching an aluminum oxide comprising substrate, and methods of forming a capacitor: This invention methods of etching an aluminum oxide comprising substrate, and methods of forming capacitors. In one implementation, a method of etching an aluminum oxide comprising substrate includes flowing water and ozone to aluminum oxide on the substrate, with at least one of the water and the ozone being at... Agent: Wells St. John P.s.

20060283838 - Chemical mechanical polish process and method for improving accuracy of determining polish endpoint thereof: A method for improving accuracy of determining polish endpoint of chemical mechanical polish (CMP) process is provided. The method is performed before the CMP process. First, a test wafer with a to-be-polished layer and a material layer under the to-be-polished layer is provided. Then, a test beam with a wavelength... Agent: Jianq Chyun Intellectual Property Office

20060283839 - Polishing equipment having a longer operating time length: A polishing equipment includes a polishing head mounting thereon a wafer and a polishing pad having a polishing surface for polishing the wafer. The polishing surface has a groove for guiding slurry on the polishing surface. The groove has a depth larger in the intermediate area of the polishing surface... Agent: Young & Thompson

20060283840 - Method of polishing gan substrate: In a polishing method of a GaN substrate according to this invention, first, while supplying a polishing solution 27 containing abrasives 23 and a lubricant 25, onto a platen 101, the GaN substrate is polished using the platen 101 and the polishing solution 27 (first polishing step). Then the GaN... Agent: Mcdermott Will & Emery LLP

20060278604 - Magnetic recording head, fabrication process, and magnetic disk storage apparatus mounting the magnetic head: Embodiments of the invention provide a manufacturing method for thin magnetic heads capable of achieving narrow tracks, preventing shape defects and electrical short defects, as well as improving the production yield. Shape defects and short defects can be reduced and a high production yield achieved even with a narrow track... Agent: Townsend And Townsend And Crew LLP

20060278605 - Method of fabricating a lens: The present invention provides a method of fabricating at least one lens. The method comprises providing a substrate with a surface coating. The surface coating is deformable and the method comprises imprinting a structure into the surface coating. The method also comprises etching at least a region of the imprinted... Agent: Hewlett Packard Company

20060278606 - Etchant, and method for fabricating a thin film transistor substrate including conductive wires using the etchant and the resulting structure: e

20060278607 - Method for fabricating semiconductor device with step gated asymmetric recess structure: A method for fabricating a semiconductor device with a step gated asymmetric recess structure is provided. The method includes: forming an anti-scattering reflection layer on a substrate; forming a mask on the anti-scattering reflection layer; etching the anti-scattering reflection layer using the mask as an etch barrier; and etching predetermined... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20060278610 - Method of controlling chamber parameters of a plasma reactor in accordance with desired values of plural plasma parameters, by translating desired values for the plural plasma parameters to control values for each of the chamber parameters: Plural chamber parameters of a plasma reactor are controlled in accordance with desired values of plural plasma parameters, by concurrently translating desired values for the plural plasma parameters to control values for each of plural chamber parameters, and then setting each of the chamber parameters to corresponding ones of the... Agent: Robert M. Wallace Law Office Of Robert M. Wallace

20060278608 - Method of determining plasma ion density, wafer voltage, etch rate and wafer current from applied bias voltage and current: Plasma parameters such as plasma ion density, wafer voltage, etch rate and wafer current in the chamber are determined from external measurements on the applied RF bias electrical parameters such as voltage and current. The method includes sensing RF parameters corresponding to an input impedance, an input current and an... Agent: Robert M. Wallace Law Office Of Robert M. Wallace

20060278609 - Method of determining wafer voltage in a plasma reactor from applied bias voltage and current and a pair of constants: The voltage of a wafer on the pedestal of an RF plasma reactor is instantly determined from the applied bias current and the applied bias voltage sampled during plasma processing of the wafer using a pair constants. Prior to plasma processing of the wafer, a determination is made of first... Agent: Robert M. Wallace Law Office Of Robert M. Wallace

20060278611 - Method and device for flattening surface of solid: In a method of irradiating a gas cluster ion beam on a solid surface and smoothing the solid surface, the angle formed between the solid surface and the gas cluster ion beam is chosen to be between 1° and an angle less than 30°. In case the solid surface is... Agent: Gallagher & Lathrop, A Professional Corporation

20060278612 - Manufacturing method of semiconductor integrated circuit device: To provide a semiconductor integrated circuit device having improved reliability. An EFEM unit upstream of a plasma processing unit is equipped with a chemical filer for alkali removal. In the plasma processing unit, a semiconductor wafer is subjected to plasma processing with a gas containing fluorine. The resulting semiconductor wafer... Agent: Antonelli, Terry, Stout & Kraus, LLP

20060278613 - Method and device for removing material from a three-dimensional surface in a multi-layered manner by means of a laser, using a polygon network which is described by a mathematical function and represents the surface: The invention relates to a method for removing material from a three-dimensional surface (1) of any shape in a single or multilayered manner by means of a material removing agent (9), such as a laser, that acts in points on the a surface and where a surface structure (2) is... Agent: Henry M Feiereisen, LLC

20060278614 - Polishing composition and method for defect improvement by reduced particle stiction on copper surface: A chemical-mechanical polishing composition comprising abrasive particles, a hydroxyquinoline, and a diamine compound comprising an ether group, and a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.... Agent: Steven Weseman Associate General Counsel, I.p.

20060273065 - Method for forming free standing microstructures: A method of forming free standing microstructures includes providing a substrate and forming a sacrificial layer on the substrate. A thin-film structural layer is then formed around and over the sacrificial layer. The sacrificial layer may be formed from an electrically conductive or non-electrically conductive material in certain embodiments of... Agent: VistaIPLaw Group LLP

20060273066 - Method for manufacturing a magnetic sensor having an ultra-narrow track width: A method for constructing a device such as a magnetoresistive sensor having an extremely narrow width (track width). A photoresist mask is deposited with an edge where an edge of the device is to be located. A layer of material that is susceptible to removal by reactive ion etch (RIEable... Agent: Zilka-kotab, PC

20060273067 - Polarizer based on a nanowire grid: The preferred embodiment provides for development and use of an array of nanowires with a period smaller then 150 nm for applications such as an optical polarizer. To manufacture such structures the preferred embodiment employs a hard nanomask. This nanomask includes a substantially periodic array of substantially parallel elongated elements... Agent: Darby & Darby P.C.

20060273068 - Methods for preparing a bonding surface of a semiconductor wafer: A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface with a solution of NH4OH/H2O2 at treatment parameters sufficient to etch about 10 Å to about 120 Å from the wafer surface, followed by treating the... Agent: Winston & Strawn LLP

20060273069 - Forming a conductive pattern on a substrate: A method of forming a conductive pattern on a substrate. The method comprising providing a substrate carrying a conductive layer; forming a first portion of the conductive pattern by exposing the conductive layer to a laser and controlling the laser to remove conductive material around the edge(s) of desired conductive... Agent: Sughrue Mion, PLLC

20060273071 - Method of processing substrate and chemical used in the same: A method of processing an organic film pattern formed on a substrate, includes a first step of removing an alterated or deposited layer formed at a surface of the organic film pattern, and a second step of contracting at least a part of the organic film pattern or removing a... Agent: Sughrue Mion, PLLC

20060273070 - Photoresist polymer, photoresist composition and method for manufacturing semiconductor device: A photoresist polymer comprising a fluorine component, a photoresist composition containing the photoresist polymer and an organic solvent to reduce surface tension, and a method for manufacturing a semiconductor device using the same by forming a photoresist film uniformly on the whole surface of an underlying layer pattern to allow... Agent: Marshall, Gerstein & Borun LLP

20060273072 - Tungsten silicide etch process with reduced etch rate micro-loading: The embodiments provides an improved tungsten silicide etching process with reduced etch rate micro-loading effect. In one embodiment, a method for etching a layer formed on a substrate is provided. The method includes providing a substrate into a plasma processing chamber, the substrate having a metal silicide layer formed thereon... Agent: Martine Penilla & Gencarella, LLP