Etching a substrate: processes inventions 10/06

20060237389 - Method for fabricating interlayer conducting structure of circuit board: A method for fabricating an interlayer conducting structure of a circuit board is proposed. The method includes providing a core layer, and a first insulating layer and a second insulating layer formed on the upper and lower surfaces of the core layer successively, forming a through hole penetrating the core...

20060237390 - Combined microscale mechanical topography and chemical patterns on polymer substrates for cell culture: The invention is a method for fabricating a cell culture surface substrate, comprising the steps of a) forming a cell culture surface having a mechanical topography, b) forming a synthetic chemical pattern using a chemical pattern template, and c) combining the cell culture surface having a mechanical topography and the...

20060237391 - Vacuum processing apparatus and vacuum processing method of sample: Provided is a vacuum processing apparatus or processing method which, when films of a plurality of layers are etched into a predetermined shape, eliminates a deficiency in shape formed by sample processing, increases the aspect ratio of the processed shape, and provides a more precise shape. The vacuum processing apparatus...

20060237392 - Polymer remover: Compositions useful for the removal of post-plasma processing polymeric residue from substrates, such as electronic devices, are provided. Also provided are methods of removing the post-plasma processing residues and methods of manufacturing integrated circuits using the compositions....

20060231521 - Technique for manufacturing micro-electro mechanical structures: A technique for manufacturing a micro-electro mechanical structure includes a number of steps. Initially, a cavity is formed into a first side of a handling wafer, with a sidewall of the cavity forming a first angle greater than about 54.7 degrees with respect to a first side of the handling...

20060231522 - Etch of silicon nitride selective to silicon and silicon dioxide useful during the formation of a semiconductor device: A method for etching silicon nitride selective to silicon dioxide and silicon (polycrystalline silicon or monocrystalline silicon) comprises the use of oxygen along with an additional etchant of either CHF3 or CH2F2. Flow rates, power, and pressure settings are specified....

20060231523 - Method to planarize perpendicular write poles using a combination of cmp and reactive ion milling: A perpendicular write head includes a beveled main pole having corners defining a track width and having a planarized surface and encapsulated on either side thereof and below by an alumina layer, the alumina layer having a polished surface and extending above the main pole on either side thereof as...

20060231524 - Techniques for the use of amorphous carbon (apf) for various etch and litho integration schemes: A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer...

20060231525 - Method for manufacturing porous structure and method for forming pattern: A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc−No) values of monomer units constituting respective polymer...

20060231526 - System and method for determining the state of a film in a plasma reactor using an electrical property: The present invention describes a system and method for monitoring a material film within a plasma processing device. The plasma processing device comprises a plasma reactor formed by a reactor wall and an electrode, a RF generator to couple electrical energy to the electrode, an impedance match network to maximize...

20060231527 - Method for manufacturing semiconductor device: A method of separating a lamination body with high yield without damaging the lamination body is provided. Further, a method of manufacturing a lightweight, flexible semiconductor device, which is thin in total is provided. The method of manufacturing the semiconductor device includes: a first step of laminating a metal layer,...

20060231528 - Methods of forming semiconductor constructions: The invention includes methods by which a fuse box of a semiconductor construction is fabricated to have a substantially uniform layer over fuses extending therein. In particular aspects, the invention includes methods in which one or more processing steps associated with fabrication and patterning of bond pads and redistribution layers...

20060226114 - Method for producing a micromechanical device and a micromechanical device: A method for manufacturing a micromechanical device and a resulting micromechanical device are provided, the device having a substrate material, a membrane, and a cavity situated between the substrate and the membrane in a membrane cavity area. In this method, holes are first produced through the membrane in a first...

20060226115 - Composition and method for preparing chemically-resistant roughened copper surfaces for bonding to substrates: The invention is directed to a method and composition for providing chemically-resistant roughened copper surfaces suitable for subsequent multilayer lamination. In one embodiment, a smooth copper surface is contacted with an adhesion promoting composition under conditions effective to provide a roughened copper surface, the adhesion promoting composition comprising an oxidizer,...

20060226116 - Magnetic recording media and method of forming them: The present invention is directed to carrying out a high density magnetic recording to a material having a large coercive force by perpendicular magnetic recording head. By giving a patterning onto a soft magnetic under layer of a perpendicular two-layer recording media in sync with a period of a recording...

20060226117 - Phase change based heating element system and method: A method of and apparatus for regulating carbon dioxide using a pre-injection assembly coupled to a processing chamber operating at a supercritical state is disclosed. The method and apparatus utilize a source for providing supercritical carbon dioxide to the pre-injection assembly and a temperature control element for maintaining the pre-injection...

20060226118 - Methods for forming backside alignment markers useable in semiconductor lithography: Disclosed herein are methods for forming photolithography alignment markers on the back side of a substrate, such as a crystalline silicon substrate used in the manufacture of semiconductor integrated circuits. According to the disclosed techniques, laser radiation is used to remove the material (e.g., silicon) from the back side of...

20060226120 - Etch profile control: A method for etching a dielectric layer over a substrate and disposed below a mask is provided. The substrate is placed in a plasma processing chamber. An etchant gas comprising O2 and a sulfur component gas comprising at least one of H2S and a compound containing at least one carbon...

20060226121 - Etching method: An interlayer insulating film composed of an organic compound film containing an organic component as a main constituent is deposited on a semiconductor substrate. Then, etching is performed with respect to the interlayer insulating film by using a plasma derived from an etching gas containing an ammonia gas as a...

20060226119 - Method for generating plasma method for cleaning and method for treating substrate: A plasma generation method in a toroidal plasma generator that includes a gas passage having a gas entrance and a gas outlet and forming a circuitous path and a coil wound around a part of the gas passage includes the steps of supplying a mixed gas of an Ar gas...

20060226122 - Selective wet etching of metal nitrides: In one embodiment, the present invention relates to a wet etching composition including hydrogen peroxide; an organic onium hydroxide; and an acid. In another embodiment, the invention relates to a method of wet etching metal nitride selectively to surrounding structures comprising one or more of silicon, silicon oxides, glass, PSG,...

20060226125 - Chemical-mechanical polishing (cmp) slurry and method of planarizing computer memory disk surfaces: Compositions and methods for planarizing or polishing a surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) purified clay; and optional additives, such as (c) a chemical accelerator; and (d) a complexing or coupling agent capable of chemically or ionically complexing with,...

20060226123 - Profile control using selective heating: A semiconductor processing system includes a thickness monitoring system, a position monitoring system, and a processor. The processor is configured to receive information indicative of a local thickness of a layer on a substrate during processing, and information indicative of a position of the substrate during processing. The system may...

20060226124 - Substrate and a method for polishing a substrate: A substrate having flatness of less than 230 nmPV and surface roughness at RMS of less than 0.20 nm. is obtained by a method comprising: a process of polishing an object to be polished with a polishing pad comprising at least one layer having compressibility of 5% or below in...

20060226126 - Polymeric inhibitors for enhanced planarization: The invention provides a chemical-mechanical polishing system comprising a polishing component, a surfactant, and a liquid carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the polishing system....

20060219653 - Method for producing individual microlenses or a microlens array: Disclosed is a method for producing single microlenses or an arrays of microlenses composed of a glass-type material, in which method a first substrate is provided with a surface containing impressions over which a second substrate composed of a glass-type material is placed at least partially overlapping it and is...

20060219654 - Silicon substrate comprising positive etching profiles with a defined slope angle, and production method: The invention relates to a silicon substrate comprising positive etching profiles with defined slope angle. Said silicon substrate is obtained by etching the silicon substrate that is covered with a mask and by carrying out the following steps: a) the silicon substrate is isotropically etched, the undercut u of the...

20060219655 - Ferroelectric thin-film production method, voltage-application etching apparatus, ferroelectric crystal thin-film substrate, and ferroelectric crystal wafer: A ferroelectric thin-film production method produces a ferroelectric crystal thin film by using a ferroelectric crystal having first and second surfaces opposed to each other and having an etching rate of the first surface greater than that of the second surface and etching the first surface of the ferroelectric crystal....

20060219656 - Method of fabricating printhead ic to have displaceable inkjets: A method of fabricating an inkjet printhead IC is provided which includes etching a circuitry layer to define first regions, depositing thermally expandable material thereover, etching the thermally expandable material and circuitry layer to define second regions having via holes, forming heaters at the second regions electrically contacting the circuitry...

20060219657 - Etching method and apparatus, computer program and computer readable storage medium: An etching method, for etching a silicon nitride film on an underlying silicon oxide film by using a hard mask whose principal component is a silicon oxide, includes a step of etching the hard mask by using the resist film as a mask to form a mask pattern therein; a...

20060219658 - Method of measuring semiconductor wafers with an oxide enhanced probe: A method of measuring at least one electrical property of a semiconductor wafer includes providing an elastically deformable and electrically conductive contact having an insulative oxide layer formed on an exterior surface thereof by a controlled oxidation process, such as, without limitation, thermal oxidation, anodic oxidation or deposition oxidation. A...

20060219660 - Etching method: A method for etching an insulation film through a patterned mask, includes the steps of etching the insulation film until just before an underlayer is about to be exposed by applying a plasma, and modifying a quality of a remaining film of the insulation film by applying another plasma which...

20060219659 - Method for treatment of silicon-based target object to be processed, apparatus for treatment and method of manufacturing semiconductor device: Disclosed is a method for the treatment of a silicon-based target object to be processed, comprising the steps of exposing the silicon-based target object to a plasma atmosphere containing oxygen radicals, and applying a DC voltage to the silicon-based target object via a resistance element in an atmosphere of the...

20060219661 - Surface treatment methods for implants made of titanium or titanium alloy: A method of producing a generally uniformly roughened surface on Ti 6/4 alloy or titanium for contact with living bone comprises exposing the Ti 6/4 alloy or titanium in an aqueous solution of citric acid and hydrofluoric acid for a suitable time period to remove the native oxide from the...

20060219662 - Fabrication process of semiconductor device and polishing method: A method of fabricating a semiconductor device includes a polishing process of a substrate, wherein the polishing process includes the steps of applying a chemical mechanical polishing process to the substrate on a polishing pad while using slurry, and conditions a surface of the polishing pad, the conditioning step including...

20060219663 - Metal cmp process on one or more polishing stations using slurries with oxidizers: Polishing compositions and methods for removing conductive materials and barrier materials from a substrate surface are provided. In one aspect, a full sequence electrochemical mechanical planarization technique is provided. In another aspect, a hybrid planarization technique using combination of at least one chemical mechanical polishing process and at least one...

20060219664 - Core leaching: Removal of a soluble part of a core allows provision of relatively complex three-dimensional geometric shapes in a component. Unfortunately previous leaching arrangements have been relatively erratic such that it is difficult to provide consistency of component form over a batch of components formed. By providing a tank combination which...