Etching a substrate: processes inventions 09/06

20060207964 - Method for releasing a micromechanical structure: A method for releasing a micromechanical structure. A substrate is provided. At least one micromechanical structural layer is provided above the substrate, wherein the micromechanical structural layer is sustained by a sacrificial layer of a silicon material. An amine-based etchant is provided to etch the silicon material. That is, during...

20060207965 - Method to form both high and low-k materials over the same dielectric region, and their application in mixed mode circuits: A new method of provided for forming in one plane layers of semiconductor material having both high and low dielectric constants. Layers, having selected and preferably non-identical parameters of dielectric constants, are successively deposited interspersed with layers of etch stop material. The layers can be etched, creating openings there-through that...

20060207966 - Method to improve ability to perform cmp-assisted liftoff for trackwidth definition: A method is presented for fabricating a read head having a read head sensor and a hard bias/lead layer which includes depositing a strip of sensor material in a sensor material region, and depositing strips of fast-milling dielectric material in first and second fast-milling dielectric material regions adjacent to the...

20060207967 - Porous processing carrier for flexible substrates: The present invention is directed to a substrate product for use in the manufacture of active matrix liquid crystal display panels, flexible displays, or flexible electronics. The product includes a display substrate suitable for use as a display panel. The display substrate has a thickness less than or equal to...

20060207968 - Selective etching of oxides from substrates: A method and system for release etching a micro-electrical-mechanical-systems (MEMS) device from a substrate. In one aspect, the invention is a method comprising (a) supporting at least one substrate having a sacrificial oxide and a non-sacrificial material in a process chamber at a pressure and at a temperature; (b) introducing...

20060207969 - Substrate treating apparatus and substrate treating method: In a substrate treating unit, a removal liquid supplying mechanism supplies a removal liquid to the surface of a substrate. In order to retain the removal liquid on the surface of the substrate for a fixed time, a spin chuck is operated to spin the substrate at such a low...

20060207970 - Printed circuit patterned embedded capacitance layer: A method is disclosed for fabricating a patterned embedded capacitance layer. The method includes fabricating (1305, 1310) a ceramic oxide layer (510) overlying a conductive metal layer (515) overlying a printed circuit substrate (505), perforating (1320) the ceramic oxide layer within a region (705), and removing (1325) the ceramic oxide...

20060207971 - Atmospheric transfer chamber, processed object transfer method, program for performing the transfer method, and storage medium storing the program: An atmospheric transfer chamber, connected to an object processing chamber for processing a target object by using a plasma of a halogen-based gas, for transferring the target object therein, the atmospheric transfer chamber includes a dehumidifying unit for dehumidifying air in the atmospheric transfer chamber. The dehumidifying unit includes a...

20060207972 - Method for realizing microchannels in an integrated structure: A process is presented for realizing buried microchannels in an integrated structure comprising a monocrystalline silicon substrate. The process forms in the substrate at least one trench. A microchannel is obtained starting from a small surface port of the trench by anisotropic etching of the trench. The microchannel is then...

20060207973 - Apparatus adapted to engrave a label and related method: An apparatus adapted to engrave a label and a related method for engraving a label are disclosed. The apparatus includes a laser diode adapted to emit a laser beam and heat-exchanging member adapted to adjust the temperature of the laser diode. The method includes measuring a present energy level of...

20060201907 - Treatment of the working layer of a multilayer structure: The invention relates to a method for forming a plurality of electrically conductive islands in a working layer of a multilayer structure made from semiconductor materials, with the structure including an electrically insulating layer located beneath the working layer. This method includes the steps of selectively masking certain regions of...

20060201908 - Liquid ejection head and method of producing same: A method of producing a liquid ejection head comprising: a flow path forming substrate in which a space including pressure generating chambers and an ink reserving chamber is formed; a nozzle plate which is stacked on one face of the flow path forming substrate; and a vibration plate which is...

20060201909 - Roller with microstructure and the manufacturing method thereof: The present invention discloses a method for manufacturing a roller with microstructure, comprising the steps of: forming a protective metal layer on a roller; defining specific imprint patterns on an imprint stamp by processing the imprint stamp with a flexible mold; forming an etch mask on the embossed imprint stamp...

20060201910 - Methods for removing extraneous amounts of molding material from a substrate: Methods for removing thin layers of extraneous multi-component molding material from one or more areas on a substrate. The methods include exposing the substrate to a plasma effective to remove a non-particulate component of the molding material from each area. The methods further include exposing the substrate to a non-plasma...

20060201911 - Methods of etching photoresist on substrates: Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including CxHyFz, where y≧x and z≧0, and one or more optional components to generate a plasma effective to etch the carbon-rich layer with low removal of the inorganic layer. The carbon-rich layer...

20060201912 - Method for reducing linewidth and size of metal, semiconductor or insulator patterns: Disclosed herein is a method for forming metal, semiconductor or insulator patterns. The method comprises the steps of: (S302) forming metal, semiconductor or insulator patterns 202 with the larger sizes or linewidths by the prior method; and (S306) reducing the sizes or linewidths of the patterns 202 by etching the...

20060201913 - Methods and compositions for removing group viii metal-containing materials from surfaces: A method and composition for removing Group VIII metal-containing materials from a surface (preferably, a platinum-containing, and more preferably, a platinum-rhodium-containing surface) involves the use of a mixture of phosphoric acid, sulfuric acid, nitric acid, and hydrochloric acid....

20060201914 - Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion: A chemical mechanical polishing aqueous dispersion, including: (A) abrasives; (B) an organic acid; (C) benzotriazole or a benzotriazole derivative; (D) a poly(meth)acrylate; (E) an oxidizing agent; and (F) water, the abrasives (A) being included in the chemical mechanical polishing aqueous dispersion in an amount of 2 to 10 wt %....

20060196843 - Process for fabricating monolithic membrane substrate structures with well-controlled air gaps: A process for fabricating monolithic membrane structures having air gaps is disclosed, comprising the steps of: providing a wafer; depositing and patterning a protective layer on the wafer; providing a trench in the wafer; depositing and patterning a metal in the trench; depositing and patterning a sacrificial layer on the...

20060196844 - Apparatus, system, and method for increasing data storage density in patterned media: An apparatus, system, and method are disclosed for increasing data storage density in patterned media. One or more deposition sources may apply magnetic material to one or more recesses formed in a substrate, each recess having opposing sidewalls that are effectively coated by the deposition sources. The top surface of...

20060196845 - Quartz tuning-fork resonators and production method: Methods and apparatus for producing crystalline Quartz tuning-fork resonators using a deep reactive ion etching process. The resonators have an outline formed by a method including masking a substrate with a metal mask. The metal mask being resistant to reactive ion etching and conforming to the outline. The resulting plasma...

20060196846 - Plasma processing method and apparatus, and method for measuring a density of fluorine in plasma: In a plasma processing apparatus for plasma-processing a target object accommodated in a processing chamber, a density of fluorine F is measured while performing a plasma processing by using a processing gas containing O2 gas and one or more inert gases based on a ratio of an emission intensity of...

20060196847 - Plasma processing method and apparatus: A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an...

20060196849 - Composition and method for polishing a sapphire surface: An improved composition and method for polishing a sapphire surface is disclosed. The method comprises abrading a sapphire surface, such as a C-plane or R-plane surface of a sapphire wafer, with a polishing slurry comprising an abrasive amount of an inorganic abrasive material such as colloidal silica suspended in an...

20060196850 - Polishing slurry composition and method of using the same: A polishing slurry composition including an abrasive, a pH-adjusting agent, a water-soluble thickening agent, and a chelating agent, wherein the chelating agent includes at least one of an acetate chelating agent and a phosphate chelating agent, and a method of using the same....

20060196848 - Readily deinkable toners: The invention is directed to a method of polishing a silicon-containing dielectric layer involving the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The polishing...

20060196843 - Process for fabricating monolithic membrane substrate structures with well-controlled air gaps: A process for fabricating monolithic membrane structures having air gaps is disclosed, comprising the steps of: providing a wafer; depositing and patterning a protective layer on the wafer; providing a trench in the wafer; depositing and patterning a metal in the trench; depositing and patterning a sacrificial layer on the...

20060196844 - Apparatus, system, and method for increasing data storage density in patterned media: An apparatus, system, and method are disclosed for increasing data storage density in patterned media. One or more deposition sources may apply magnetic material to one or more recesses formed in a substrate, each recess having opposing sidewalls that are effectively coated by the deposition sources. The top surface of...

20060196845 - Quartz tuning-fork resonators and production method: Methods and apparatus for producing crystalline Quartz tuning-fork resonators using a deep reactive ion etching process. The resonators have an outline formed by a method including masking a substrate with a metal mask. The metal mask being resistant to reactive ion etching and conforming to the outline. The resulting plasma...

20060196846 - Plasma processing method and apparatus, and method for measuring a density of fluorine in plasma: In a plasma processing apparatus for plasma-processing a target object accommodated in a processing chamber, a density of fluorine F is measured while performing a plasma processing by using a processing gas containing O2 gas and one or more inert gases based on a ratio of an emission intensity of...

20060196847 - Plasma processing method and apparatus: A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an...

20060196849 - Composition and method for polishing a sapphire surface: An improved composition and method for polishing a sapphire surface is disclosed. The method comprises abrading a sapphire surface, such as a C-plane or R-plane surface of a sapphire wafer, with a polishing slurry comprising an abrasive amount of an inorganic abrasive material such as colloidal silica suspended in an...

20060196850 - Polishing slurry composition and method of using the same: A polishing slurry composition including an abrasive, a pH-adjusting agent, a water-soluble thickening agent, and a chelating agent, wherein the chelating agent includes at least one of an acetate chelating agent and a phosphate chelating agent, and a method of using the same....

20060196848 - Readily deinkable toners: The invention is directed to a method of polishing a silicon-containing dielectric layer involving the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The polishing...