Etching a substrate: processes inventions 08/06

20060191861 - Embossing plate with a three-dimensional structure for the production of documents by a hot-cold laminating press: The invention concerns an embossing plate for a hot-cold-laminating press with a three-dimensional structure based on an essentially flawless metal plate with a hardened surface of appropriate thickness and dimensions and a suitable surface, specifically a highly polished surface, into which or onto which the three-dimensional structure is incorporated by...

20060191862 - Ink jet recording head, manufacturing method therefor, and substrate for ink jet recording head manufacture: A base member for use in manufacturing an ink jet recording head, which includes a supply port, an ejection outlet, a liquid flow path for directing liquid supplied from the supply port to the ejection outlet, and an ejection pressure generating element, disposed in the liquid flow path, for ejecting...

20060191864 - Mask, mask manufacturing method, pattern forming apparatus, and pattern formation method: A mask for forming a thin film having a first pattern against a film formation substrate, including: a nonmagnetic substrate having an aperture corresponding to the first pattern; and a magnetic film having a second pattern and arranged on the nonmagnetic substrate....

20060191863 - Method for fabricating etch mask and patterning process using the same: A method for fabricating a mask is provided. A patterned sacrificial layer is formed over a mask material layer, and the patterned sacrificial layer has an etch selectivity different from that of the mask material layer. An isotropic etch process is performed to the mask material layer by using the...

20060191865 - Method of processing substrate, method of manufacturing solid-state imaging device, method of manufacturing thin film device, and programs for implementing the methods: A method of processing a substrate that enables the amount removed of an insulating film to be controlled precisely, without damaging an electronic device. An insulating film on a substrate of a solid-state imaging device is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under...

20060191866 - Microfeature workpiece processing system for, e.g., semiconductor wafer analysis: The present disclosure suggests apparatus and methods that can be used to chemically process microfeature workpieces, e.g., semiconductor wafers. One implementation of the invention provides a method in which a surface of a microfeature workpiece is contacted with an etchant liquid. The wall of the processing chamber may be highly...

20060191867 - Method of processing organic film and method of manufacturing semiconductor device: A method of forming an organic film disposes a substrate on which the organic film is formed in a chamber capable of reducing a pressure therein, introduces a gas including a deuterium compound or a trideuterium compound in the chamber, to generate a plasma by ionizing the gas; and etches...

20060191868 - Concept for the wet-chemical removal of a sacrificial material in a material structure: In the inventive method for the wet-chemical removal of a sacrificial material in a material structure, there is first provided the material structure, wherein the material structure has a treatment region with the sacrificial material accessible through an opening. Subsequently, the sacrificial material is brought into contact with a wet-chemical...

20060191869 - Method for roughening copper surfaces for bonding to substrates: The invention is directed to a method and composition for providing roughened copper surfaces suitable for subsequent multilayer lamination. A smooth copper surface is contacted with an adhesion promoting composition under conditions effective to provide a roughened copper surface, the adhesion promoting composition consisting essentially of an oxidizer, a pH...

20060191870 - Extended kalman filter incorporating offline metrology: An algorithm uses offline metrology to control a process by passing information from an outer control loop to an inner control loop, extended Kalman filter estimator. The inner control loop operates online, and the outer control loop operates asynchronously with respect to the inner control loop. The online control loop...

20060191871 - Cmp slurry delivery system and method of mixing slurry thereof: A CMP slurry delivery system includes a delivery pipe, a first slurry supply reservoir coupled to the delivery pipe for supplying an abrasive, a second slurry supply reservoir coupled to the delivery pipe for supplying a clean chemical, a third slurry supply reservoir coupled to the delivery pipe for supplying...

20060191872 - Method of polishing a wafer: A method for polishing a wafer comprising an aqueous solution having a pH in the range of 6 to 8, wherein the aqueous solution comprises at least one compound selected from the group consisting of a polymethacrylic acid, a polysulfonic acid, and combinations thereof, and wherein the compound is present...

20060186084 - Patterning nanoline arrays with spatially varying pitch: A nanoimprint mold is described, comprising a plurality of alternating layers of distinct materials differentially etched along an edge thereof, said layers having spatially varying thicknesses along said edge such that nanolines patterned with said nanoimprint mold have corresponding spatially varying pitches....

20060186086 - Composition for forming a polymer layer and method of forming a pattern using the same: A composition for forming a polymer layer and a method of forming a pattern using the same are provided. The composition comprises a polyhydroxystyrene resin, a cross-linking compound including silicon and a solvent. The composition has an organic-inorganic hybrid system. Thus, a polymer layer formed using the composition has improved...

20060186085 - Method for the production of a micromechanical part preferably used for fluidic applications, and micropump comprising a pump membrane made of a polysilicon layer: A method for producing a micromechanical component, preferably for fluidic applications having cavities. The component is constructed from two functional layers, the two functional layers being patterned differently using micromechanical methods. A first etch stop layer having a first pattern is applied to a base plate. A first functional layer...

20060186087 - Etchant and method of use: A method of anisotropically etching a semiconductive substrate uses a hydrofluorocarbon etch gas with an etch selectivity fluorocarbon gas. The fluorocarbon gas is used under conditions that enhance selectivity of the etch to an etch stop layer with respect to a bulk dielectric material such as doped or undoped silicon...

20060186088 - Etching and cleaning bpsg material using supercritical processing: A method for etching and removing post-etch residue from a BPSG material is disclosed. In accordance with the method of the present invention, the BPSG material is etched and the residue is removed from the substrate structure using supercritical solutions....

20060186089 - Chemical mechanical polishing method: A chemical mechanical polishing method, including: chemically and mechanically polishing a polishing target surface by continuously performing a first polishing step and a second polishing step having a polishing rate lower than a polishing rate of the first polishing step, a chemical mechanical polishing aqueous dispersion used in the first...

20060180569 - Method of manufacturing step contact window of flat display panel: The present invention pertains to a method of manufacturing a step contact window of a flat display panel, comprising: providing a substrate, which further comprises a first electrically conductive layer, an insulating layer and a photoresist layer, forming a plurality of step structures on the photoresist layer, etching the insulating...

20060180570 - Application of in-situ plasma measurements to performance and control of a plasma processing system: A system and method for managing a plasma system is described. In one embodiment the method includes measuring at least one aspect of a state of plasma in the plasma system so as to obtain plasma state data, receiving subsystem data, which is indicative of at least one subsystem of...

20060180571 - Plasma etching method and apparatus, control program for performing the etching method, and storage medium storing the control program: A plasma etching method for etching an etching target layer of a silicon layer through a mask of a silicon oxide film includes the following sequential steps of forming an opening in the silicon oxide film, wherein an opening dimension of a portion between a top and a bottom surface...

20060180573 - Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid: A method and system is described for treating a substrate with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for treating the substrate surface. The process chemistry comprises fluorosilicic acid....

20060180572 - Removal of post etch residue for a substrate with open metal surfaces: A method and system is described for treating a substrate having an open metal surface thereon using a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for removing residues from the substrate surface. The process chemistry comprises...

20060180574 - Thin film support substrate for use in hydrogen production filter and production method of hydrogen production filter: In a through hole closing process, a metal plate is attached to one surface of a conductive base member having a plurality of through holes by the use of a magnet, in a copper plating process, a copper plating layer is formed on the conductive base member and the metal...

20060175285 - Method of making magnetic recording medium and die therefor: A resist film is formed on the surface of a magnetic layer on a substrate. A die is overlaid on the surface of the magnetic layer. The die includes magnetic and non-magnetic regions alternately arranged on a flat surface around a groove. The resist film is embossed so that the...

20060175286 - Method for manufacturing an lcd device: A method for manufacturing a TFT panel of an LCD device includes the steps of wet etching a multilayer metallic structure including a high-melting-point metal film (HMPM) film, Al film and another HMPM film while using side etching technique by using a photoresist mask, hot-water washing the side walls of...

20060175287 - Micro-lenses for cmos imagers and method for manufacturing micro-lenses: A micro-lens and a method for forming the micro-lens is provided. A micro-lens includes a substrate and lens material located within the substrate, the substrate having a recessed area serving as a mold for the lens material. The recessed can be shaped such that the lens material corrects for optical...

20060175288 - Manufacturing method of quartz crystal vibrating piece, quartz crystal vibrator, oscillator, electronic device, and electric wave clock: To provide a manufacturing method of a small-sized quartz crystal vibrating piece, which can decrease processing variations due to accuracy of matching a front and a rear of a mask in etching of a quartz crystal wafer. According to a manufacturing method of a quartz crystal vibrating piece to be...

20060175289 - Method of fabricating semiconductor device: A method of fabricating a semiconductor device including a high-k dielectric for as a gate insulating layer is provided. The method includes forming a high-k dielectric layer and a conductive layer on a substrate, dry etching a portion of the conductive layer, performing a process to increase a wet etch...

20060175291 - Control of process gases in specimen surface treatment system: A method of removing hydrocarbon contaminants from a surface of a specimen is provided. The method comprises the steps of: positioning a specimen within a vacuum chamber; maintaining the vacuum chamber at a suitable pressure; introducing into the vacuum chamber a process gas comprising a hydrogen precursor or a mixture...

20060175290 - Photo resist stripping and de-charge method for metal post etching to prevent metal corrosion: An pure H2O stripping process for etched metal wafers effectively solves the metal corrosion deficiencies induced by O2, N2 plasma charging. The pure H2O plasma stripping releases and neutralizes the storage of positive charge accumulated in the wafer, reduces chlorine concentration, and effectively strips the photoresist and etching residue. Thereby...

20060175292 - System and method for anisotropically etching a recess in a silicon substrate: An explanation is given of a method in which a plasma is used for energetic excitation of a reactive etching gas. The reactive etching gas is a constituent of a continuous gas flow. A recess is deepened by at least fifty micrometers without interrupting the gas flow in the meantime,...

20060175293 - Semiconductor device and method for manufacturing multilayered substrate for semiconductor device: A method for manufacturing a multilayered substrate for a semiconductor device, as well as a semiconductor device, is provided, the multilayered substrate exhibiting an excellent thermal conduction property and an excellent heat spreading effect without occurrence of warp and deformation. A diamond layer is formed through vapor phase deposition on...

20060175294 - Chemical mechanical polishing method and apparatus: A method for removing material from the surface of a semiconductor wafer with a chemical mechanical polishing process is described. The method uses a polishing pad on which a line-pattern of grooves is formed. The pattern comprises orderly spaced grooved-area and area without grooves. The method combines information of the...

20060175295 - Abrasive partilcle for chemical mechanical polishing: An abrasive composition for polishing substrates including a plurality of abrasive particles having a polydisperse particle size distribution with median particle size, by volume, being about 20 nanometers to about 100 nanometers; a span value, by volume, being greater than or equal to about 20 nanometers, wherein the fraction of...

20060175297 - Metallization method for a semiconductor device and post-cmp cleaning solution for the same: A metallization method for a semiconductor device, and a cleaning solution for the same, for cleaning a surface of a semiconductor substrate on which a metal wiring material is exposed. The metallization method may include cleaning a surface of a semiconductor substrate on which a metal wiring layer is exposed...

20060175298 - Method and composition for polishing a substrate: Polishing compositions and methods for removing barrier materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a barrier material from a substrate surface including an acid based electrolyte system, one or more chelating agents, one or more pH adjusting agents to...

20060175296 - Method of manufacturing semiconductor device: A method for manufacturing a semiconductor device is provided, which includes depositing a conductive film above an insulating film formed above a semiconductor substrate and having a recess, thereby forming a treating film, polishing the treating film while feeding a first chemical solution containing abrasive particles and a second chemical...

20060169667 - Etching liquid for controlling silicon wafer surface shape and method for manufacturing silicon wafer using the same: A method for manufacturing a silicon wafer includes a planarizing process 13 for polishing or lapping the upperside and lowerside surfaces of a thin disk-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process for dipping the silicon wafer into the etching liquid wherein silica powder...

20060169669 - Etchant treatment processes for substrate surfaces and chamber surfaces: In one embodiment of the invention, a method for finishing or treating a silicon-containing surface is provided which includes removing contaminants and/or smoothing the surface contained on the surface by a slow etch process (e.g., about <100 Å/min). The silicon-containing surface is exposed to an etching gas that contains an...

20060169668 - Low temperature etchant for treatment of silicon-containing surfaces: In one embodiment of the invention, a method for finishing or treating a silicon-containing surface is provided which includes removing contaminants and/or smoothing the surface contained on the surface by a slow etch process (e.g., about <100 Å/min). The silicon-containing surface is exposed to an etching gas that contains an...

20060169670 - Method for etching a sample and etching system: To reduce the use of expensive reactive gas, which is frequently also environmentally harmful, during etching by a plasma the reactive gas is first fed through a reaction chamber of an etching system for stabilization, until all the process parameters are adjusted to their setpoints. During this stabilization, all of...

20060169672 - Film pattern forming method, film pattern, resist film, insulation film, circuit board, semiconductor device, surface elastic wave device, surface elastic wave oscillation device, electro-optic device, and electronic device: A film pattern forming method is for forming a film pattern on a predetermined region of a substrate that has a predetermined shape. The film pattern forming method includes: rendering a surface of the substrate liquid-repellent; applying droplets of a liquid containing material for forming the film pattern in a...

20060169671 - Plasma etching apparatus and plasma etching method: A first gas supply source 100 for supplying a first process gas; a second gas supply source 110 for supplying a second process gas; a first gas introduction area 42-1 having a first gas introduction port for introducing the first process gas into the process chamber 26; a second gas...

20060169673 - Plasma processing method and apparatus: A plasma processing apparatus includes a vacuum vessel, a substrate electrode for supporting a substrate, and an antenna disposed in opposition to the substrate electrode and covered with an insulating antenna cover. A first high-frequency power supplies a high-frequency power of a 30 MHz to 3 GHz frequency to the...

20060169674 - Method and composition for polishing a substrate: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a conductive material from a substrate surface including one or more inorganic acids, a pH adjusting agent, a chelating agent, a passivating polymeric material, a...