Etching a substrate: processes inventions 07/06

20060163195 - Method for making a contact magnetic transfer template: A contact magnetic transfer (CMT) master template is made by first adhering a plastic film to a first surface of a silicon wafer. A resist pattern is then formed on the polyimide film and the polyimide is reactive-ion-etched through the resist to form recesses. The resist is removed and a...

20060163196 - Method for producing magnetic memory device: There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive...

20060163197 - Electromagnetic shielding sheet, front plate for display, and method for producing electromagnetic shielding sheet: A metal film 21 is laminated directly to or by means of an adhesive 13 to a transparent base sheet 11. A mesh metal film including lines defining apertures is formed by coating the metal film 21 with a mesh resist layer 109a patterned in a mesh, etching the metal...

20060163198 - Pattern formation method: In a pattern formation method, a resist film including a lactone ring is formed on a substrate of silicon oxide. Then, pattern exposure is performed by selectively irradiating the resist film with exposing light, and the resist film is developed after the pattern exposure so as to form a resist...

20060163199 - Dispersion of nanowires of semiconductor material: A method of manufacturing nanowires (104) is provided, according to which method the nanowires are prepared by anodic etching a semiconductor substrate (10) with an alternating current density, so as to create first regions (4) and second regions (5) with different diameters. Thereafter, the diameters are reduced by preferably repeated...

20060163200 - Plasmaless dry contact cleaning method using interhalogen compounds: A method of removing an oxide layer from an article. The article may be located in a reaction chamber into which an interhalogen compound reactive with the oxide layer is introduced. A temperature of the reaction chamber may be modified so as to remove the oxide layer. The interhalogen compound...

20060163203 - Methods and apparatus for etching metal layers on substrates: Method and apparatus for etching a metal layer disposed on a substrate, such as a photomask, are provided. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising (i) hydrogen chloride, (ii) an oxygen containing gas,...

20060163202 - Plasma etching method: A plasma etching method for etching an object to be processed, which has at least an etching target layer and a patterned mask layer formed on the etching target layer, to form a recess corresponding to a pattern of the mask layer in the etching target layer, includes a first...

20060163201 - Plasma processing system and plasma treatment process: A plasma treatment system for treating multiple substrates with a plasma. The treatment chamber of the plasma treatment system includes at least one pair of electrodes, typically vertically oriented, between which a substrate is positioned for plasma treatment. Each electrode includes a perforated panel that permits horizontal process gas and...

20060163205 - Substrate processing method and substrate processing apparatus: A resist film and a polymer layer adhered on a semiconductor substrate can be removed by the method according to the present invention. A first processing liquid, typically including a oxidizing agent, such as hydrogen peroxide solution, is fed to the substrate, thereby the condition of the resist film and...

20060163204 - Tape removal in semiconductor structure fabrication: A semiconductor structure fabrication method for removing a tape physically attached to a device side of the semiconductor substrate by an adhesive layer of the tape, wherein the adhesive layer comprises an adhesive material. The method includes the step of submerging the tape in a liquid chemical comprising monoethanolamine or...

20060163206 - Novel polishing slurries and abrasive-free solutions having a multifunctional activator: The present invention relates to aqueous slurry/solution compositions for the Chemical Mechanical Polishing/Planarization (“CMP”) of substrates. In particular, the novel slurries/solutions of the present invention contain a multifunctional activator which provides increased copper removal rate to the aqueous polishing slurry/solution while suppressing isotropic chemical etch and dishing of copper lines....

20060163207 - Substrate treating apparatus and substrate treating method using the same: Disclosed is a substrate treating apparatus including a treatment solution dispenser supplying a treatment solution on a substrate, a transporting unit transporting the substrate, and a controller controlling the transporting unit so that the substrate is transported in an inclined position. The substrate is inclined sideways through a rotation with...

20060163208 - Photoresist stripping composition and methods of fabricating semiconductor device using the same: A photoresist stripping composition and a method of fabricating a semiconductor device using the photoresist stripping composition are provided. The photoresist stripping composition is made of a mixed solution of acetone and isopropyl alcohol. A preferred volume ratio of acetone to isopropyl alcohol is in a range of about 50:50...

20060163209 - Laser machining: A silicon body W is machined with a UV or green laser beam 6 in a refrigerated liquid halide compound environment. Local heating with the laser beam of the liquid halide compound in the vicinity of a machining location is sufficient to cause a chemical reaction between the silicon body...

20060157440 - Semiconductor probe with resistive tip and method of fabricating the same: A semiconductor probe with a resistive tip and a method of fabricating the semiconductor probe. The resistive tip doped with a first impurity includes a resistive region formed at a peak thereof and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second...

20060157441 - Apparatus and method for reducing solder pad size and forming an opening in a base-metal layer of an electrical lead suspension (els): An apparatus and method for reducing solder pad size and forming an opening in a base-metal layer of an electrical lead suspension. The method provides a base-metal layer having at least one opening. A dielectric layer is provided above the base-metal layer the dielectric layer covering a portion of the...

20060157442 - Method and apparatus for forming surface shape, method and apparatus for forming flying surface shape of magnetic head: To form a surface shape of an etching object in a short time at low cost, and to make the surface shape to be formed highly accurate. An apparatus for forming a surface shape includes a resist forming device for forming a resist of a predetermined shape on a predetermined...

20060157443 - Pattern reversal process for self aligned imprint lithography and device: This invention provides a pattern reversal process for self aligned imprint lithography (SAIL). The method includes providing a substrate and depositing at least one layer of material upon the substrate. A pattern is then established upon the layer of material, the pattern providing at least one exposed area and at...

20060157444 - Imprinting machine and device manufacturing method: An imprinting machine that brings a mold having a pattern into contact with an object and transfers the pattern onto the object includes a measurement unit that measures a position of the mold when the mold contacts the object....

20060157446 - End point detection method for plasma etching of semiconductor wafers with low exposed area: A method for controlling the plasma etching of semiconductor wafers determines the impedance of a plasma chamber using values representing voltage, current, and the phase angle between them, as provided by a sensor. All or less than all of the data during a first time period may be used to...

20060157445 - Gas setting method, gas setting apparatus, etching apparatus and substrate processing system: Mixing ratio and flow rate of a first gaseous mixture supplied to a central portion of the substrate are set. Subsequently, etching is performed by changing a mixing ratio of a second gaseous mixture supplied to an outer peripheral portion of the substrate while a setting of the first gaseous...

20060157447 - Method and apparatus for forming surface, magnetic head and method of manufacturing the same: It is to manufacture uniform and high-quality structural bodies which face no quality changes due to mechanical process. There is provided a surface forming apparatus that comprises a surface forming device for performing surface forming process to a prescribed structural body, wherein the surface forming device is an irradiation device...

20060157448 - Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses: Methods for removing black silicon or black silicon carbide from a plasma-exposed surface of an upper electrode of a plasma processing chamber are provided. The methods include forming a plasma using a gas composition containing a fluorine-containing gas, and removing the black silicon or black silicon carbide from the surface...

20060157449 - Plasma processing apparatus and a plasma processing method: In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, and F is necessary, and there is a problem in that the etching characteristic fluctuates in accordance with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having...

20060157450 - Method for improving hss cmp performance: Disclosed is a method for improving HSS CMP performance. After performing a HSS CMP process for a predetermined time, DI water is introduced and the polishing process is continued, so that the CMP rate and performance can be improved....

20060151427 - Apparatus and method for forming an opening in a base-metal layer of an electrical lead suspension (els) to increase the impedance: An apparatus and method for forming an opening in a base-metal layer of an electrical lead suspension (ELS) to increase the impedance. The method provides a base-metal layer having at least one opening. A dielectric layer above the base-metal layer is also provided, the dielectric layer covering a portion of...

20060151428 - Method for roughening a surface of a body, and optoelectronic component: A method for roughening a surface of a body (1), having the following steps of: coating the surface with a mask layer (2), applying preformed mask bodies (3) on the mask layer (2), etching through the mask layer (2) at locations not covered by mask bodies (3), and etching the...

20060151430 - Method and system for processing multi-layer films: A method of processing multi-layer films, the method including: (1) processing a plurality of layers according to selected parameters, (2) determining a plurality of optical characteristics each associated with one of the plurality of layers and determined during the processing of the associated one of the plurality of layers, and...

20060151429 - Plasma processing method: A plasma processing method utilizing a plasma processing apparatus comprising a control unit and a processing chamber for performing a plasma processing in which the processing chamber comprises a plasma status detecting unit for detecting the processing status in the processing chamber and outputting plural output signals. The method includes...

20060151431 - Surface treatment of concrete: A method of treating a surface for the removal of a surface portion comprising irradiating the surface with laser light, wherein the irradiation is effected by covering said surface in a sequential manner with a plurality of discrete spots of laser light. The spots of laser light overlap and may...

20060151432 - Surface treatment of concrete: The invention provides a method and an apparatus for treating a surface for the removal of a surface portion thereof, comprising the steps of producing a beam of laser light and obscuring a low power density part of the laser beam before irradiating a surface location with the laser light...

20060151433 - Method for removing and recoating of diamond-like carbon films and its products thereof: The invention relates to a method for removing and recoating of diamond-like carbon films and its products thereof. The method is to immerse the units that are coated with diamond-like carbon films into the hydrogen chloride solution to come off the coating, which was located on the units' surface. In...

20060151434 - Selective surface texturing through the use of random application of thixotropic etching agents: An improved process for predictably treating a substrate surface is provided comprising the use of a pre-selected thixotropic etchants to achieve a superior and predetermined substrate surface....

20060151435 - Surface processing method: After forming unevenness at the surface of the SOG layer 3, the intermediate layer 2 and the sample material 1 can be eliminated in order using, for example, an oxygen ion beam. As a result, the same unevenness as at the surface of the SOG layer 3 can be formed...

20060151436 - Methodology of chemical mechanical nanogrinding for ultra precision finishing of workpieces: A chemical-mechanical nanogrinding process achieves near-zero pole tip recession (PTR) to minimize magnetic space loss of the head transducer to media spacing loss, alumina recession trailing edge profile variation, and smooth surface finish with minimal smearing across multi-layers of thin films and the hard substrate to meet the requirements of...

20060144812 - Process for producing structure, structure thereof, and magnetic recording medium: The present invention relates to a process for producing a structure having holes at prescribed positions. The structure is produced through steps of (A) providing an impressing member having protrusions, and a substrate, (B) forming a layer, on the substrate, from a material having a less strength than the impressing...

20060144813 - Method of making optical elements for an optical disc system: A large diameter glass wafer is pattern-etched to provide a plurality of elongated lens elements arranged side-by-side, the etching leaving small rods in place to keep the lens elements connected to the wafer during mirror processing. The etching provides curved surfaces for lenses and flat surfaces for mirrors. The mirrors...

20060144814 - Imprint lithography: An imprinting method is disclosed, which in an embodiment, involves contacting an imprintable medium on a substrate with a template to form an imprint in the medium comprising a pattern feature and an area of reduced thickness, separating the template from the imprinted medium, and, after separating the template from...

20060144815 - Treatment method for surface of photoresist layer and method for forming patterned photoresist layer: A treatment method for a surface of a photoresist layer is provided. After forming a patterned photoresist layer over a wafer, a surface treatment step is performed to the photoresist layer by using at least one reaction gas comprising hydrogen bromide or hydrogen iodide to form a hardened layer over...

20060144816 - Method for separating a useful layer and component obtained by said method: A useful layer (1) is initially attached by a sacrificial layer (2) to a layer (3) forming a substrate. Before etching of the sacrificial layer (2), at least a part of the surface (4, 5) of at least one of the layers in contact with the sacrificial layer (2) is...

20060144817 - Low-pressure removal of photoresist and etch residue: A method is provided for low-pressure plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an oxygen-containing gas, where low or zero bias is applied to the substrate in the first...

20060144818 - System for detecting film quality variation and method using the same: A system includes a throttle valve moving in response to a pressure present in a vacuum pump line for controlling the pressure of the vacuum pump line based on the movement of the throttle valve; a monometer for detecting the movement of the throttle valve and outputting movement data indicative...

20060144819 - Remote chamber methods for removing surface deposits: The present invention relates to an improved remote plasma cleaning method for removing surface deposits from a surface, such as the interior of a deposition chamber that is used in fabricating electronic devices. The improvement involves addition of a nitrogen source to the feeding gas mixture comprising of oxygen and...

20060144820 - Remote chamber methods for removing surface deposits: The present invention relates to an improved remote plasma cleaning method for removing surface deposits from a surface, such as the interior of a deposition chamber that is used in fabricating electronic devices. The improvement involves a fluorocarbon rich plasma pretreatment of interior surface of the pathway from the remote...

20060144821 - Method for engraving irreproducible pattern on the surface of a diamond: The present invention provides a method for engraving desired irreproducible patterns on the surface of gemstones including diamond by the use of an energetic ion beam. The pattern has a characteristic topological texture, which is irreproducible even using the same ion beam to engrave onto the same location of the...

20060144822 - Apparatus and method for wet-etching: A wet-etching apparatus (20) includes a first etching chamber (213), a second etching chamber (215), and a cleaning chamber (214) located between the first and second etching chambers. The wet-etching apparatus includes the cleaning chamber disposed between the first and second etching chambers. After being etched in the first etching...

20060144823 - Etching solution for d-defect evaluation in silicon wafer and evaluation method using the same: The present invention relates to an etching solution for evaluating crystal defects of silicon wafers, and more particularly to an etching solution comprising KMnO4 and HF. The etching solution for crystal defect evaluation of a silicon wafer in accordance with the present invention can accurately and quickly evaluate the crystal...

20060144824 - Method of polishing a silicon-containing dielectric: The invention is directed to a method of polishing a silicon-containing dielectric layer involving the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The polishing...

20060144825 - Dual reduced agents for barrier removal in chemical mechanical polishing: Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing a barrier layer material in a chemical mechanical polishing technique including at least one reducing agent selected from the group of bicarboxylic...