Etching a substrate: processes inventions 06/06

20060138076 - Method for making a planar suspended microstructure, using a sacrificial layer of polymer material and resulting component: Production process of a flat suspended micro-structure using a sacrificial layer of polymer material and component obtained thereby The process successively comprises deposition of a sacrificial layer (2) of polymer material, deposition, on at least a part of the substrate (1) and of the front face of the sacrificial layer...

20060138077 - Method of making an angled tip for a scanning force microscope: A method of making a microscope probe includes the steps of: providing a cantilever; depositing a masking layer on a surface of the cantilever; developing a deterministic spot of the masking layer; removing the deterministic spot of the masking layer from the cantilever to form a deterministic spot of exposed...

20060138078 - Semiconductor device fabrication method: A semiconductor device fabrication method applies a diazo novolac photoresist to a semiconductor wafer, followed by light exposure of its entire surface to form an underlying resist layer; forms a surface resist layer thereover; performs patterned-light exposure and heat treatment to the photoresist film consisting of the two resist layers...

20060138079 - Fabrication process of microfluidic devices: A method for making a microfluidic device comprises providing a processing substrate, forming a negative stamp on the processing substrate using a direct write process, disposing a coating material on the processing substrate, curing the coating material to produce a cured coating material, and separating the processing substrate and the...

20060138080 - Stamper, lithographic method of using the stamper and method of forming a structure by a lithographic pattern: A stamper includes a substrate and a plurality of protrusions of different heights formed on one of the surfaces of the substrate, the protrusions of larger height having a stack structure formed of at least two layers of at least two types of materials, thereby transferring a plurality of patterns...

20060138081 - Methods for silicon electrode assembly etch rate and etch uniformity recovery: Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom....

20060138082 - Method and apparatus for determining consumable lifetime: A plasma processing device comprising a gas injection system is described, wherein the gas injection system comprises a gas injection assembly body, a consumable gas inject plate coupled to the gas injection assembly body, and a pressure sensor coupled to a gas injection plenum formed by the gas injection system...

20060138083 - Patterning and alteration of molecules: The present invention provides a series of methods, compositions, and articles for patterning a surface with multiple, aligned layers of molecules, by exposing the molecules to electromagnetic radiation. In certain embodiments, a single photomask acts as an area-selective filter for light at multiple wavelengths. A single set of exposures of...

20060138085 - Plasma etching method with reduced particles production: A plasma etching method, wherein less particles is produced, for forming trenches in a substrate is provided. The method includes performing a first etching step on a substrate using a first etching condition and then performing a second etching step on the substrate using a second etching condition. Between the...

20060138084 - Selective reactive ion etching of wafers: The invention comprises a device for assisting in the selective reactive ion etching of wafers comprising, a graphite base plate including an opening for housing a wafer, and a plurality of graphite strips that can be arranged over the graphite base plate to select a site of a wafer housed...

20060138086 - Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride: The present invention provides a method for polishing silica and silicon nitride on a semiconductor wafer comprising the steps of planarizing the silica with a first aqueous composition comprising by weight percent 0.01 to 5 carboxylic acid polymer, 0.02 to 6 abrasive, 0.01 to 10 polyvinylpyrrolidone, 0 to 5 cationic...

20060138087 - Copper containing abrasive particles to modify reactivity and performance of copper cmp slurries: A slurry for use in a chemical mechanical polishing process for planarizing copper-based metal structures on a substrate comprises an oxidizer, an organic complexing agent, surfactants, and a plurality of copper-based metal abrasive particles, wherein the copper in the copper-based metal is capable of dissolving into the slurry and forming...

20060131260 - Member for circuit board, method and manufacturing circuit board, apparatus for manufacturing circuit board: A circuit board-use member has a reinforcing plate, a removable organic layer, a flexible film having a circuit pattern, and a peeling-assist layer laminated in that order; a method forms a circuit board by forming a circuit pattern on a flexible film which is adhered to a reinforcing plate with...

20060131261 - Process for making island arrays: A method of fabricating electronic, optical or magnetic device; requiring an array of large numbers of small feature in which regions defining individual features of the array are foamed by the steps of: (a) depositing a very thin film of a highly soluble solid onto a flat hydrophilic substrate (b)...

20060131262 - Fabrication of a reflective spatial light modulator: Fabrication of a reflective spatial light modulator including a micro-mirror array. In one embodiment, the micro-mirror array is fabricated from a substrate that is a single crystal material by only two main etching steps. A first etch forms cavities in a first side of the material. A second etch forms...

20060131264 - Method of forming pillars in a fully integrated thermal inkjet printhead: Pillars are formed in a fully integrated thermal inkjet printhead to prevent particles from entering into a nozzle chamber along an ink refill channel. The pillars are formed after a step of applying a thin film structure to a substrate. At one step, pits are etched through the thin film...

20060131263 - Slotted substrates and methods and systems for forming same: Methods and systems for forming slotted substrates are described. In one exemplary embodiment, a substrate has a thickness defined by a first surface and a generally opposing second surface. The substrate has a fluid-feed slot extending between the first surface and the second surface with the fluid-feed slot being defined,...

20060131266 - Large area electronic device with high and low resolution patterned film features: Two different processing techniques are utilized to respectively form high resolution features and low resolution features in a critical layer of an electronic device, and in particular a large area electronic device. High resolution features are formed by soft lithography, and low resolution features are formed by jet-printing or using...

20060131265 - Method of forming branched structures: The present invention provides a method of forming a branched structure which comprises applying colloidal-sized particles over structures. The coated structures are then etched such that the structures are etched through the colloidal particles to form branched structures. The etch may be a reactive ion etch. The structures may be...

20060131267 - Photosensitive resin composition, thin film panel made with photosensitive resin composition, and method for manufacturing thin film panel: A photosensitive resin composition includes an alkali-soluble resin, a quinone diazide, a surfactant, and a solvent. The solvent includes a diethylene glycol dialkyl ether that includes an alkyl group including one to five carbon atoms, an ethyl 3-ethoxy propionate, an alkyl acetate that includes an alkyl group including three to...

20060131268 - Non-contact discrete removal of substrate surface contaminants/coatings, and method, apparatus, and system for implementing the same: A substrate preparation method is provided. The method includes providing a substrate to be prepared. The substrate has a first layer and a second layer. The first layer is to be removed from over the second layer. An energy frequency that is to be absorbed by the second layer while...

20060131269 - Object-moving method, object-moving apparatus and production process using the method: A method of moving an object comprises a step of fixing the object to an object-moving means, a step of moving the object to a prescribed position by the object-moving means, and a step of releasing the object from the object-moving means; wherein the fixing step comprises forming a deposit,...

20060131270 - Method and system for making a nano-plate for imprint lithography: Provided is a method and system for manufacturing a nano-plate. The method includes depositing two or more types of film around a central core to form a plurality of film layers, each film layer being of a different type than its adjacent layers. Next, the deposited film layers are sectioned...

20060131271 - Methods and apparatus for sequentially alternating among plasma processes in order to optimize a substrate: In a plasma processing system, a method for optimizing etching of a substrate is disclosed. The method includes selecting a first plasma process recipe including a first process variable, wherein changing the first process variable by a first amount optimizes a first substrate etch characteristic and aggravates a second substrate...

20060131272 - Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles: In a semiconductor device manufacturing apparatus that processing a substrate by applying a voltage to a gas to create a plasma, positively charged particles are trapped or guided at the instant that the cathode voltage is stopped, by an electrode to which is imparted a negative voltage, so as to...

20060131273 - Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool: Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, a characteristic of a polishing pad, or a characteristic of a polishing tool are provided. One method includes scanning a specimen with a measurement device during polishing of a specimen to...

20060131274 - Method for producing an electronic component: The invention relates to a method for the manufacture of a device with the following steps: (a) formation of a base body (1) having two external electrodes opposite each other, and (b) adjustment of the resistance of the base body (1) measured between the external electrodes, to a given target...

20060131275 - Selective slurry for chemical mechanical polishing: An aqueous solution is useful for selective removal in the presence of a low-k dielectric. The aqueous solution comprises by weight percent 0 to 25 oxidizer; 0.00002 to 5 multi-component surfactant, the multi-component surfactant having a hydrophobic tail, a nonionic hydrophilic portion and an anionic hydrophilic portion, the hydrophobic tail...

20060131276 - Uniformity in batch spray processing using independent cassette rotation: A method for performing a batch spray comprises providing a substrate mounted upon a turntable, rotating the turntable to revolve the substrate around a center axis of the turntable, rotating the substrate independently of the turntable, wherein the rotating of the substrate occurs simultaneously with the rotating of the turntable,...

20060131277 - Solution for the selective removal of metal from aluminum substrates: The present disclosure relates to a solution for selectively removing metal, such as Ta or TaN, from a substrate, such as an aluminum containing substrate. The solution comprises an acid, such as HF or buffered HF, an ingredient comprising a fluorine ion, such as ammonium fluoride (NH4F), ethylene glycol, and...

20060124581 - Mask blank for charged particle beam exposure, method of forming mask blank and mask for charged particle beam exposure: The present invention provides a mask blank used for the charged particle beam exposure made by employing an SOI substrate having a silicon membrane higher reliability in quality, without the problem of deformation due to the compression stress of a silicon oxide film as an intermediate layer of the SOI...

20060124582 - Method for fabricating bottom electrodes of stacked capacitor memory cells and method for cleaning and drying a semiconductor wafer: Bottom electrodes of stacked capacitor DRAM cells are formed by depositing a metal layer on the side walls of trenches within a hard mask layer, which serves as a mold for the bottom electrode elements. Prior to depositing the hard mask layer a sacrificial first metal layer is disposed, which...

20060124583 - Method for the manufacture of printed circuit boards with plated resistors: A process is revealed whereby resistors can be manufactured integral with a printed circuit board by plating the resistors onto the insulative substrate. Uniformization of the insulative substrate through etching and oxidation of the plated resistor are discussed as techniques for improving the uniformity and consistency of the plated resistors....

20060124584 - Method of increasing the area of a useful layer of material transferred onto a support: A composite structure in accordance with the invention includes front faces of first and second substrates that are molecularly bonded to each other, wherein the dimensions of the second substrate outline are larger than the first substrate outline. The front faces are molecularly bonded such that the outline of the...

20060124585 - Method for manufacturing magnetic recording medium: A method for manufacturing a magnetic recording medium is provided, which can manufacture a magnetic recording medium that includes a recording layer having a concavo-convex pattern and has a sufficiently flat surface. The method includes the steps of: forming an object to be processed including a recording layer having a...

20060124586 - Rinse liquid for lithography and method for forming resist pattern using same: The present invention provide with a rinse solution for lithography and a resist pattern forming method using the same, which can prevent an inclination and peeling-off of a resist pattern and form a resist pattern having a high aspect ratio with high reproducibility. The rinse solution for lithography of the...

20060124587 - Method for fabricating semiconductor device using arf photolithography capable of protecting tapered profile of hard mask: A method for fabricating a conducting layer pattern using a hard mask of which a upper surface is flattened by the use of ArF exposure light source. The method includes the steps of: forming a conducting layer on a semiconductor substrate; forming a first hard mask layer, a second hard...

20060124589 - Apparatus and method for removing photoresist in a semiconductor device: A photoresist in a semiconductor device with copper wiring is effectively removed at a low temperature of 25° C. using a photoresist removing apparatus that includes a vacuum chamber, a plasma generator located in the upper side of the chamber, and a wafer chuck that is insulated at all but...

20060124588 - System and method for reducing metal oxides with hydrogen radicals: A method of removing impurities in a film is disclosed. The method includes generating hydrogen radicals including inputting a hydrogen radical precursor material to a radical source including a plasma chamber, that is external to a processing chamber, the radical source having an outlet in fluid communication with the processing...

20060124590 - Alkali etching liquid for silicon wafer and etching method using same: An alkali etching liquid for a silicon wafer that includes an aqueous solution of potassium hydroxide, and from 0.1 g/L to 0.5 g/L of diethylene triamine pentaacetic acid. Furthermore, the Fe concentration of the aqueous solution of potassium hydroxide is no more than 50 ppb. An etching method that including...

20060124592 - Chemical mechanical polish slurry: Relatively large oxide particles formed during the CMP process can scratch a conductive material being polished. An interference agent is added the polishing slurry, which results in significant reduction in scratching of the conductive material by interfering with the formation of the large oxide particles. The interference agent may comprise...

20060124594 - Chemical mechanical polishing (cmp) slurries and cmp methods using and making the same: In one aspect, a chemical-mechanical-polishing (CMP) slurry composition is provided which includes ceria abrasive contained in a solution, where the solution includes a viscosity increasing agent which includes a non-ionic polymer compound, and where a viscosity of the composition is at least 1.5 cP. In other aspects, the viscosity increasing...

20060124593 - Colloidal silica based chemical mechanical polishing slurry: A composition for chemical mechanical polishing a surface of a substrate having a plurality of ultra high purity sol gel processed colloidal silica particles for chemical mechanical polishing having alkali metals Li, Na, K, Rb, Cs, Fr and a combination thereof, at a total alkali concentration of about 300 ppb...

20060124595 - Method of polishing film to be polished: A method comprises a main laminate making step of forming a plurality of main magnetic poles onto a substrate, covering each magnetic pole with a first protective film, and forming onto the first protective film a stopper film provided with openings at respective parts opposing the main magnetic poles, each...

20060124597 - Polishing medium for chemical-mechanical polishing, and method of polishing substrate member: This invention provides a polishing medium for chemical-mechanical polishing, comprising an oxidizing agent for a conductor, a protective-film-forming agent for protecting a metal surface, an acid, and. water; (1) the polishing medium having a pH of 3 or less, and the oxidizing agent being in a concentration of from 0.01...

20060124591 - Polishing slurry for chemical mechanical polishing and method for polishing substrate: The present invention is directed to a CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond (triple bond between carbon and carbon) and water, and a method for polishing a substrate which comprises a step of polishing a film to be polished of the substrate...

20060124596 - Thinner composition, method of preparing the same and method of recovering the same: e

20060124598 - Difluoride composition, method of preparation, and use for frosting glass: Aqueous composition comprising at least one fluoride-ion-generating agent and at least one viscosity modifier, characterized in that its viscosity, measured at 25° C. using a Brookfield™ LVT viscometer fitted with a No. 1 spindle rotating at a speed of 30 revolutions per minute, is between 50 and 5000 mPa·s. Method...

20060113277 - Micro-fluid ejection head containing reentrant fluid feed slots: A method of micro-machining a semiconductor substrate to form through slots therein and substrates made by the method. The method includes providing a dry etching chamber having a platen for holding a semiconductor substrate. During an etching cycle of a dry etch process for the semiconductor substrate, a source power...

20060113278 - Bilayered metal hardmasks for use in dual damascene etch schemes: A metal hardmask for use with a Dual Damascene process used in the manufacturing of semiconductor devices. The metal hardmask has advantageous translucent characteristics to facilitate alignment between levels while fabricating a semiconductor device and avoids the formation of metal oxide residue deposits. The metal hardmask comprises a first or...

20060113279 - Non-photolithographic method for forming a wire grid polarizer for optical and infrared wavelengths: A method for forming a plurality of parallel metal lines on a substrate of thin film elastomeric material and a wire grid polarizer formed by such method. A sacrificial layer is formed by coating the substrate with a water soluble polymer while the substrate is stretched. The existing tensile force...

20060113280 - Partial edge bead removal to allow improved grounding during e-beam mask writing: A method to provide a ground point for second, or subsequent, e-beam mask-writing steps by selectively removing the photoresist edge bead of a photomask substrate to expose the underlying chrome layer. The selective removal leaves at least one tab of photoresist edge bead over the chrome layer. After the first...

20060113281 - Method of precise wafer etching: A method of precise wafer etching includes the provision of a nozzle for spraying an etchant onto a crystal plate which is disposed opposite to the nozzle and can be born by a rotating device, such that the crystal plate to be etched will take the nozzle as the center...

20060113282 - Method of depositing an epitaxial layer of sige subsequent to a plasma etch: A method of preparing a silicon layer or substrate surface for growing an epitaxial layer of SiGe thereon. The process comprises removing native oxide from the surface of the silicon with an HF solution, and then oxidizing the exposed silicon surface to form a chemically formed layer of silicon oxide...

20060113283 - Polishing composition for a semiconductor substrate: A polishing composition containing at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium; a polishing process of a semiconductor substrate, including the step of polishing a semiconductor substrate with a polishing composition for a semiconductor substrate,...

20060113284 - Manufacturing method of substrate: Provided is a manufacturing method of a substrate capable of forming a pattern having a relatively narrow width and thick film based on a droplet discharging method. The manufacturing method of a substrate of the present invention is a manufacturing method of a substrate having a patterned functional film, including...