Etching a substrate: processes inventions 05/06

20060108320 - Molecular self-assembly in substrate processing: Systems and methods for molecular self-assembly are provided. The molecular self-assembly receives a substrate that includes one or more regions of dielectric material. A molecularly self-assembled layer is formed on an exposed surface of the dielectric material. The molecularly self-assembled layer includes material(s) having a molecular characteristic and/or a molecular...

20060108321 - Etching apparatus: Disclosed is an etching apparatus enabling to increase productivity of etching glass substrates. The present invention includes an etching bath having an etchant, a plurality of sensors inside the etching bath detecting a level of the etchant, and a deionized water tube spraying a deionized water to the sensors....

20060108322 - Lift-off material: A lift-off material for use in fabricating a nanostructure. The lift-off material includes a first material adapted to, and present in an amount sufficient to provide a predetermined amount of mechanical strength to the nanostructure during fabrication; and a second material adapted to, and present in an amount sufficient to...

20060108323 - Dry etching method: A dry etching method and the like that can process a layer to be processed in a fine pattern to have a peripheral portion of an angular shape, are described. This dry etching method forms a step portion 21 along a peripheral portion of a first mask layer 20 that...

20060108324 - Process for removing a residue from a metal structure on a semiconductor substrate: The invention is concerned with a process for removing residue comprising a polymeric resist and metal oxide from a metal structure on a semiconductor substrate, the process comprising the steps of: (a) heating up the substrate with the metal structure in the presence of molecular nitrogen gas (N2); (b) a...

20060108326 - Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios: The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, an inorganic halide salt, and an aqueous carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal...

20060108325 - Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers: A polishing mixture and related method of polishing a material wafer surface, such as silicon carbide, are disclosed. The polishing mixture comprises; an abrasive and an oxidizer mixed in an acidic solution. Alumina may be used as the abrasive and the polishing mixture may have a pH less than or...

20060108327 - Method of manufacturing a microstructure: Disclosed is a method of manufacturing a microstructure that requires a first material and a second material attached together and a laser system for producing a laser beam. The first material should exhibit an ablation threshold that does not exceed a predetermined ablation fluence of the laser beam and the...

20060102586 - High selectivity bpsg to teos etchant: An organic acid/fluoride-containing solution etchant having high selectivity for BPSG to TEOS. In an exemplary situation, a TEOS layer may be used to prevent contamination of other components in a semiconductor device by the boron and phosphorous in a layer of BPSG deposited over the TEOS layer. The etchant of...

20060102587 - Method for etching chromium thin film and method for producing photomask: An object to be processed has a chromium-based thin film made of a material containing chromium. The thin film is etched using a resist pattern as a mask. The thin film is etched by the use of a chemical species produced by preparing a dry etching gas containing a halogen-containing...

20060102588 - Method of processing an object and method of controlling processing apparatus to prevent contamination of the object: A method of manufacture includes processing an object in a chamber and subsequently generating an electrical force of attraction to float contaminants off of a region adjacent the processed object before the object is unloaded from the chamber. The object may be processed with the use of plasma. The plasma...

20060102589 - Plasma etching method and plasma etching apparatus: At a surface of a semiconductor wafer W as a processing object, a SiOC layer, a SiC layer and a Cu layer are formed in the order from an upper side. In the SiOC layer, a first opening for forming a via is formed. Using the SiOC layer as a...

20060102591 - Method and system for treating a substrate using a supercritical fluid: A method and system is described for treating a substrate with a supercritical fluid using a high temperature process. For example, when the supercritical fluid includes carbon dioxide in a supercritical state, the high temperature process is performed at temperature approximately equal to and exceeding 80° C., which is greater...

20060102590 - Method for treating a substrate with a high pressure fluid using a preoxide-based process chemistry: A method and system is described for treating a substrate with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for treating the substrate surface. The process chemistry includes a peroxide-based chemistry....

20060102592 - Etchants and etchant systems with plural etch selectivities: An etchant for removing materials with a plurality of selectivities exhibits a first etch selectivity at a first temperature and a second etch selectivity at a second temperature. The etchant may include phosphoric acid, fluoboric acid, or sulfuric acid. The materials that the etchant is configured to remove may include...

20060096945 - Method for making a surface acoustic wave device package: A method for making a SAW device package includes the steps of: forming a pattern of a metal layer, that defines transmitting and receiving transducers of a SAW die, on a wafer; forming a pattern of a first photo sensitive layer, which defines a peripheral wall of a cap of...

20060096944 - Method for the production of a micromechanical device, particularly a micromechanical oscillating mirror device: A method for producing a micromechanical device, e.g., a micromechanical oscillating mirror device, is provided. It is provided, starting from the front side of an SOI/EOI(epipoly on insulator) substrate, to penetrate to the desired depth of the silicon substrate layer in two successive, separate deep etching steps, and to use...

20060096946 - Encapsulated wafer processing device and process for making thereof: A wafer processing device for use in semiconductor wafer processing applications as an Electro-Static Chuck (ESC) comprising a graphite substrate and at least one electrode pattern, wherein the grooves in the electrode pattern are filled with insulating or semiconducting material selected from a group consisting of B, Al, Si, Ga,...

20060096947 - Method for fabricating an isolated microelectromechanical system (mems) device using an internal void: A method for fabricating an electrically isolated MEMS device having an outer stationary MEMS element and an inner movable MEMS element is provided that does not use a sacrificial layer. Rather, a pair of spacers are defined on the outer portions of the upper surface of a conductive wafer, and...

20060096948 - Thin film supporting substrate used in filter for hydrogen production and method for manufacturing filter for hydrogen production: In a through hole closing process, a metal plate is attached to one surface of a conductive base member having a plurality of through holes by the use of a magnet, in a copper plating process, a copper plating layer is formed on the conductive base member and the metal...

20060096949 - Method of forming a compliant template for uv imprinting: In an embodiment of the present invention, the template is formed by forming a masking layer on a substrate; forming a pattern in the masking layer such that a portion of the substrate is exposed; etching one or more of the exposed portions of the substrate such that a relief...

20060096950 - Bead blast activation of carbon nanotube cathode: Activation of printed or dispensed carbon nanotube (CNT) film using a particle-blasting technique, also referred to as sandblasting or bead blasting. The process works by sending particles of material at high enough velocity such that when the particles hit the surface, some of the material at the surface is removed....

20060096951 - Apparatus and method for controlling process non-uniformity: An apparatus is provided which includes a holder operable to retain an article for interaction with a medium. The article has a first portion and a second portion, and the medium is such that the interaction alters the article in a temperature-dependent manner. First and second temperature-modifying elements are maintained...

20060096952 - Plasma processing method: Disclosed is a plasma processing method for processing a target object by using a plasma of a process gas containing a fluorocarbon compound. Used is a fluorocarbon compound having at least one triple bond within the molecule and at least one CF3 group bonded by a single bond to the...

20060091103 - Write head fabrication by inverting order of process steps: During fabrication of a write head via holes are first opened in a gap layer, followed by formation of seed layers instead of the other way around. Moreover a first seed layer is formed, and without the first seed layer being used a second seed layer is formed. The second...

20060091104 - Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing: Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a...

20060091105 - Method for constraining a thin pattern: The invention relates to a method for straining or deforming a pattern or a thin layer (24), starting from an initial component comprising the said thin layer and a prestressed layer (20), this method comprising: an etching step of the prestressed layer, perpendicular to its surface....

20060091106 - Printing plate and method for fabricating the same: A printing plate and method for fabricating the same is disclosed. A metal layer is first formed on a glass substrate. The metal layer is then patterned in a predetermined shape. The glass substrate is next etched to a predetermined depth using the patterned metal layer as a mask and...

20060091107 - Selective etching processes of sio2, ti and in2o3 thin films for feram device applications: A method of selectively etching a three-layer structure consisting of SiO2, In2O3, and titanium, includes etching the SiO2, stopping at the titanium layer, using C3F8 in a range of between about 10 sccm to 30 sccm; argon in a range of between about 20 sccm to 40 sccm, using an...

20060091108 - Method and apparatus for controlling etch processes during fabrication of semiconductor devices: A method for controlling etch processes during fabrication of semiconductor devices comprises tests and measurements performed on non-product and product substrates to define an N-parameter CD control graph that is used to calculate a process time for trimming a patterned mask to a pre-determined width. An apparatus for performing such...

20060091109 - Euv collector debris management: A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV...

20060091110 - Cleaning solution and method for cleaning semiconductor device by using the same: The present invention provides a cleaning solution and a method for cleaning a semiconductor device by the same capable of preventing damages on a tungsten layer from the cleaning solution and removing particles. The cleaning solution includes a deionized water-based ammonia solution; a surfactant added to the ammonia solution; and...

20060091111 - Anodized aluminum etching process and related apparatus: A process for selectively etching a surface of an anodized aluminum article. A preferred process includes: providing an aluminum sheet or web including first and second sides having anodized finishes; etching the first side to improve the adhesion capabilities of that side but not etching the second side so that...