Etching a substrate: processes inventions 04/06

20060086689 - Method of fabricating microneedles: A low cost method for fabricating microneedles is provided. According to one embodiment, the fabrication method includes the steps of: providing a substrate; forming a metal-containing seed layer on the top surface of the substrate; forming a nonconductive pattern on a portion of the seed layer; plating a first metal...

20060086690 - Dielectric etching method to prevent photoresist damage and bird's beak: A method of dry etching a dielectric layer is provided that prevents or significantly reduces deep ultraviolet photoresist damage and bird's beak problems. The dry etch method provided comprises the steps of providing a substrate having a dielectric layer overlying at least a portion of the substrate's surface; applying a...

20060086691 - Porous material and production process thereof: There are provided a porous material and a process for producing the same. The porous material has a plurality of columnar pores and an area surrounding the pores, and the area is an amorphous area containing C, Si, Ge or a combination thereof....

20060086692 - Plasma etching method: The present invention provides a plasma etching method that can etch a metal film as a material to be etched selectively against anorganic film underlying the material. The etching method comprising the steps of introducing an etching gas in an etching chamber wherein a material to be etched is placed,...

20060081556 - Deep trench formation in semiconductor device fabrication: A method for etching a deep trench in a semiconductor substrate. The method comprises the steps of (a) forming a hard mask layer on top of the semiconductor substrate, (b) etching a hard mask opening in the hard mask layer so as to expose the semiconductor substrate to the atmosphere...

20060081557 - Low-k dielectric functional imprinting materials: In a substantially planar circuit, the conductors are separated by an inorganic material with a dielectric constant of less than about 3.0. The dielectric layers are formed in a process that includes defining trenches and/or vias for the conductors by imprinting an initially planar layer of a radiation curable composition....

20060081558 - Plasma immersion ion implantation process: A method of processing a workpiece includes placing the workpiece on a workpiece support pedestal in a main chamber with a gas distribution showerhead, introducing a process gas into a remote plasma source chamber and generating a plasma in the remote plasma source chamber, transporting plasma-generated species from the remote...

20060081559 - Plasma processing apparatus and plasma processing method: Disclosed is a plasma processing apparatus and a plasma processing method. A substrate to be processed in accommodated in a vacuum chamber within which a plasma generator is provided so as to generate plasma for use in performing plasma processing on the substrate. Outside the vacuum chamber provided is a...

20060076311 - Methods of fabricating interferometric modulators by selectively removing a material: Methods for making MEMS devices such as interferometric modulators involve selectively removing a sacrificial portion of a material to form an internal cavity, leaving behind a remaining portion of the material to form a post structure. The material may be blanket deposited and selectively altered to define sacrificial portions that...

20060076312 - Method of modifying an etched trench: A process for facilitating modification of an etched trench is provided. The process comprises: (a) providing a wafer comprising an etched trench, the trench having a photoresist plug at its base; and (b) removing a portion of the photoresist by subjecting the wafer to a biased oxygen plasma etch. The...

20060076313 - Etching process and patterning process: An etching process is described. A material layer having a bottom anti-reflection coating (BARC) and a patterned photoresist layer thereon is provided. An etching step is performed to the BARC using the patterned photoresist layer as a mask. A cleaning step is performed to remove the polymer formed on the...

20060076314 - Method for forming a pattern: One aspect of the present invention is directed to a method of forming a pattern. A first layer which comprises a polymerization initiator is selectively formed on a second layer of a substrate. A polymer layer is selectively formed on the first layer by subjecting an organic monomer to living...

20060076315 - Semiconductor device manufacturing method and semiconductor device manufacturing apparatus: A semiconductor device manufacturing method and a semiconductor device manufacturing apparatus which enable to detect an etching end-point with high accuracy are provided. In etching of a lower layer formed on a semiconductor wafer using a mask which comprises a plurality of patterns extending in a predetermined direction (line-and-space patterns)...

20060076316 - Atmospheric process and system for controlled and rapid removal of polymers from high aspect ratio holes: A system that generates an intense hot gas stream is described to etch a polymer on a substrate used in the manufacture of semiconductor and MEMS devices with no surface damage. The etching process is particularly useful to remove a polymer from relatively high aspect Height-to-Width and Width-to-Height ratio holes...

20060076317 - Cmp composition with a polymer additive for polishing noble metals: The invention provides a method of polishing a substrate comprising contacting a substrate comprising a noble metal on a surface of the substrate with a chemical-mechanical polishing system comprising (a) a polishing component selected from the group consisting of an abrasive, a polishing pad, and a combination thereof, (b) an...

20060070978 - Method for manufacturing a bump-attached wiring circuit board: An object of the present invention is to manufacture a bump-attached wiring circuit board with which stable bump connections are possible, and there is no need for bothersome operations such as plating pretreatments. A bump formation etching mask 7 is formed on the bump formation side 3a of a metal...

20060070979 - Using ozone to process wafer like objects: The present invention relates to methods of processing wafer-like objects (e.g., having an exposed copper feature and/or including low-k dielectric material) with ozone. In certain preferred embodiments, a base is also used to process the wafer-like object(s)....

20060070980 - Manufacturing method of glass substrate for magnetic disk, and manufacturing method of magnetic disk: A method for manufacturing a glass substrate for a magnetic disk comprises mirror surface polishing and cleaning of a glass substrate, wherein polishing agent of which the principal component is rare-earth oxide with content of fluorine 5% by weight or less, is supplied to the glass substrate, the surface of...