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Endpoint detection for photomask etching

Title: Endpoint detection for photomask etching.
Abstract: Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced process monitoring for photomask etching are achieved by the use of various optical measurement techniques for monitoring at different locations of the photomask. ...
- Houston, TX, US
Inventor: Michael Grimbergen
USPTO Applicaton #: #20080176149

The Patent Description & Claims data below is from USPTO Patent Application 20080176149, Endpoint detection for photomask etching.

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Photosensitive composition containing organic fine particles
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Radiation imagery chemistry: process, composition, or product thereof
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stats Patent Info
Application #
US 20080176149 A1
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