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08/09/07 - USPTO Class 257 |  62 views | #20070182010 | Prev - Next | About this Page  257 rss/xml feed  monitor keywords

Embossing processes for substrate imprinting, structures made thereby, and polymers used therefor

USPTO Application #: 20070182010
Title: Embossing processes for substrate imprinting, structures made thereby, and polymers used therefor
Abstract: A mounting substrate includes an imprinted structure on one side for containing electrical bumps. The imprinted structure is imprinted and also cured under conditions that allow retention of significant features of the cured polymer film. A chip package is also made of the imprinted structure. A computing system is also disclosed that includes the imprinted structure. (end of abstract)



Agent: Intel/blakely - Sunnyvale, CA, US
Inventor: Paul A. Koning
USPTO Applicaton #: 20070182010 - Class: 257737000 (USPTO)

Related Patent Categories: Active Solid-state Devices (e.g., Transistors, Solid-state Diodes), Combined With Electrical Contact Or Lead, Bump Leads

Embossing processes for substrate imprinting, structures made thereby, and polymers used therefor description/claims


The Patent Description & Claims data below is from USPTO Patent Application 20070182010, Embossing processes for substrate imprinting, structures made thereby, and polymers used therefor.

Brief Patent Description - Full Patent Description - Patent Application Claims
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TECHNICAL FIELD

[0001] Disclosed embodiments relate to mounting a microelectronic device on a substrate.

BACKGROUND INFORMATION

Description of Related Art

[0002] Various techniques have been tried to prepare imprinted substrates such as printed wiring boards (PWBs). As thermal management becomes more challenging due to miniaturization, dielectric particulates in the underfill material have become more important to lower the coefficient of thermal expansion (CTE) of the underfill composite. As the percentage of low CTE filler particles has increased, capillary flow of the underfill composite has become more difficult.

[0003] As the circuitry of the semiconductor devices grows smaller, lower dielectric constant insulators are needed to maintain good electrical performance. As the dielectric constant of the insulator lowers, these materials lose some of their mechanical robustness. The underfill material therefore protects the die from mechanical stress. The low CTE filler assists in this function. To assist in lowering the mechanical stress, the low CTE filler is selected to have a CTE that is close to that of the die. The advent of these highly filled underfills necessitated a closer look at the no-flow underfill process. The no-flow underfill process includes dispensing the underfill material on the substrate before attaching the die. The no-flow process experiences the entrapment of some filler particles between the solder bump and the bond pad. Consequently, the particulates decreased the quality of the electrical contact between the bond pad and the bump.

BRIEF DESCRIPTION OF THE DRAWINGS

[0004] In order to understand the manner in which embodiments are obtained, a more particular description of various embodiments briefly described above will be rendered by reference to the appended drawings. These drawings depict embodiments that are not necessarily drawn to scale and are not to be considered to be limiting in scope. Some embodiments will be described and explained with additional specificity and detail through the use of the accompanying drawings in which:

[0005] FIG. 1A is a cross-section of a structure during processing according to an embodiment;

[0006] FIG. 1B is a cross-section of the structure depicted in FIG. 1A during processing according to an embodiment;

[0007] FIG. 1C is a cross-section of the structure depicted in FIG. 1B after further processing;

[0008] FIG. 1D is a cross-section of the structure depicted in FIG. 1C after further processing;

[0009] FIG. 1E is a cross-section of the structure depicted in FIG. 1D after further processing;

[0010] FIG. 1F is a cross-section of the structure depicted in FIG. 1E after further processing;

[0011] FIG. 1G is a cross-section of the structure depicted in FIG. 1F after further processing;

[0012] FIG. 2 is an elevation taken from a section in FIG. 1B according to an embodiment;

[0013] FIG. 3 is an elevation taken from a section in FIG. 1D according to an embodiment;

[0014] FIG. 4A is a cross-section of a structure during processing according to an embodiment;

[0015] FIG. 4B is a cross-section of the structure depicted in FIG. 4A during processing according to an embodiment;

[0016] FIG. 4C is a cross-section of the structure depicted in FIG. 4B after further processing;

[0017] FIG. 4D is a cross-section of the structure depicted in FIG. 4C after further processing;

[0018] FIG. 4E is a cross-section of the structure depicted in FIG. 4D after further processing;

[0019] FIG. 4F is a cross-section of the structure depicted in FIG. 4E after further processing;

[0020] FIG. 5 is an elevation taken from a section in FIG. 4B according to an embodiment;

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Brief Patent Description - Full Patent Description - Patent Application Claims

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Previous Patent Application:
Wiring board and method for manufacturing the same and semiconductor device and method for manufacturing the same
Next Patent Application:
Method for forming a redistribution layer in a wafer structure
Industry Class:
Active solid-state devices (e.g., transistors, solid-state diodes)

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