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  Electronic devices including dielectric layers with different densities of titaniumUSPTO Application #: 20070040207Title: Electronic devices including dielectric layers with different densities of titanium Abstract: Methods of forming an electronic device include providing a fist electrode, providing a dielectric oxide layer on the first electrode, and providing a second electrode on the dielectric oxide layer so that the dielectric oxide layer is between the first and second electrodes. More particularly, a first portion of the dielectric oxide layer adjacent the first electrode can have a first density of titanium, and a second portion of the dielectric oxide layer opposite the first electrode can have a second density of titanium different than the first density. Related structures are also discussed. (end of abstract)
Agent: Myers Bigel Sibley & Sajovec - Raleigh, NC, US Inventors: Gab-jin Nam, Seung-hwan Lee, Ki-chul Kim, Jae-soon Lim, Sung-tae Kim, Young-sun Kim USPTO Applicaton #: 20070040207 - Class: 257310000 (USPTO) Related Patent Categories: Active Solid-state Devices (e.g., Transistors, Solid-state Diodes), Field Effect Device, Having Insulated Electrode (e.g., Mosfet, Mos Diode), Insulated Gate Capacitor Or Insulated Gate Transistor Combined With Capacitor (e.g., Dynamic Memory Cell), With High Dielectric Constant Insulator (e.g., Ta 2 O 5 ) The Patent Description & Claims data below is from USPTO Patent Application 20070040207. Brief Patent Description - Full Patent Description - Patent Application Claims
RELATED APPLICATIONS [0001] The present application claims the benefit of priority as a divisional application of U.S. patent application Ser. No. 10/616,056 filed Jul. 9, 2003, which claims the benefit of priority from Korean Patent Application No. 2002-63024, filed Oct. 16, 2002, in the Korean Intellectual Property Office. The disclosures of U.S. patent application Ser. No. 10/616,056 and of Korean Patent Application No. 2002-63024 are hereby incorporated herein in their entirety by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to electronic devices and methods for manufacturing electronic devices, and more particularly, to electronic devices having dielectric layers and related methods. [0004] 2. Description of the Related Art [0005] As the integration density of semiconductor memory devices increases, the area of a cell and the space between cells decrease. However, it may be desirable that a capacitor maintain a prescribed capacitance, and thus the capacitor providing high capacitance while occupying a small area may be desired. To maintain high capacitance in capacitors occupying less substrate surface area, various measures have been suggested including using a high dielectric material for the dielectric layer, reducing a thickness of the dielectric layer, and/or increasing a surface area of a lower electrode. [0006] Among those suggestions, both the measures of reducing a thickness of the dielectric layer and increasing a surface area of the lower electrode may have reached limits of current processing and/or physical capabilities, and thus further increases of capacitance may rely on use of dielectric materials having higher dielectric constants. A tantalum oxide (Ta.sub.2O.sub.5) film having a dielectric constant .epsilon. of 24 may be used for the dielectric layer of the capacitor. Although a dielectric layer formed of a tantalum oxide film may provide a relatively high dielectric constant, use of tantalum oxide may present new difficulties. [0007] First, a tantalum oxide film may have an unstable chemical stoichiometric ratio due to a lack of oxygen so that an undesirable leakage current may result. To replenish the film with oxygen, a thermal oxidation may be applied to the tantalum oxide film. During the thermal oxidation, however, oxygen ions may easily penetrate the tantalum oxide film, and thus a silicon oxide film may be generated by reaction of the upper electrode with the oxygen ions at an interfacial surface between the tantalum oxide film and the lower electrode. Consequently, the effective oxide thickness of the dielectric layer (Toxeq) may increase, and the effective dielectric constant of the tantalum oxide film may decrease. Thus, the tantalum oxide film may neither reduce leakage current nor improve dielectric characteristics. SUMMARY OF THE INVENTION [0008] According to embodiments of the present invention, methods of forming an electronic device can include providing a first electrode, providing a dielectric oxide layer on the first electrode, and providing a second electrode on the dielectric oxide layer so that the dielectric oxide layer is between the first and second electrodes. More particularly, the dielectric oxide layer can include titanium, wherein a first portion of the dielectric oxide layer adjacent the first electrode has a first density of titanium, and wherein a second portion of the dielectric oxide layer opposite the first electrode has a second density of titanium different than the first density. In addition, the dielectric oxide layer may include tantalum, and the dielectric oxide layer can be a layer of tantalum titanium oxide. Moreover, the first electrode can be provided on a substrate so that the first electrode is between the substrate and the dielectric oxide layer. [0009] The first density of titanium can be greater than the second density of titanium with the first density of titanium in the range of approximately 0.1 to 15 percent and with the second density of titanium in the range of approximately 0.001 to 3 percent. In an alternative, the first density of titanium is less than the second density of titanium with the first density of titanium in the range of approximately 0.1 to 15 percent and the second density of titanium in the range of approximately 10 to 20 percent. [0010] Each of the first and second electrodes may comprise at least one of doped polysilicon, metal, metal oxide, metal nitride, and/or metal oxynitride. In addition, a reaction suppressing layer may be provided between the first electrode and the dielectric layer. More particularly, the reaction suppressing layer may comprise at least one of silicon nitride, silicon oxide, and/or silicon oxynitride. [0011] According to additional embodiments of the present invention, methods of forming an electronic device may include providing a first electrode, providing a reaction suppressing layer on the first electrode, providing a dielectric oxide layer including titanium on the reaction suppressing layer, and providing a second electrode on the dielectric oxide layer. In particular, the reaction suppressing layer may comprise at least one of silicon nitride, silicon oxide, and/or silicon oxynitride. In addition, the dielectric oxide layer may include tantalum, and the dielectric oxide layer may include a layer of tantalum titanium oxide. In addition, the first electrode may be provided on a substrate so that the first electrode is between the substrate and the reaction suppressing layer. [0012] Moreover, a first portion of the dielectric oxide layer adjacent the reaction suppressing layer may have a first density of titanium, and a second portion of the dielectric oxide layer opposite the reaction suppressing layer may have a second density of titanium different than the first density. More particularly, the first density of titanium can greater than the second density of titanium, with the first density of titanium in the range of approximately 0.1 to 15 percent and with the second density of titanium in the range of approximately 0.001 to 3 percent. In an alternative, the first density of titanium can be less than the second density of titanium, with the first density of titanium in the range of approximately 0.1 to 15 percent and with the second density of titanium in the range of approximately 10 to 20 percent. In addition, each of the first and second electrodes may comprise at least one of doped polysilicon, metal, metal oxide, metal nitride, and/or metal oxynitride. [0013] According to yet additional embodiments of the present invention, an electronic device may include a first electrode, a dielectric oxide layer on the first electrode, and a second electrode on the dielectric oxide layer. More particularly, the dielectric oxide layer may include titanium, with a first portion of the dielectric oxide layer adjacent the first electrode having a first density of titanium and with a second portion of the dielectric oxide layer opposite the first electrode having a second density of titanium different than the first density. The dielectric oxide layer may include titanium and may include a layer of tantalum titanium oxide. The electronic device may also include a substrate on the first electrode so that the first electrode is between the substrate and the dielectric oxide layer. [0014] In addition, the first density of titanium can be greater than the second density of titanium, with the first density of titanium in the range of approximately 0.1 to 15 percent and with the second density of titanium in the range of approximately 0.001 to 3 percent. In an alternative, the first density of titanium can be less than the second density of titanium, with the first density of titanium in the range of approximately 0.1 to 15 percent and with the second density of titanium in the range of approximately 10 to 20 percent. [0015] Each of the first and second electrodes may include at least one of doped polysilicon, metal, metal oxide, metal nitride, and/or metal oxynitride. The electronic device can also include a reaction suppressing layer between the first electrode and the dielectric layer. More particularly, the reaction suppressing layer may include at least one of silicon nitride, silicon oxide, and/or silicon oxynitride. [0016] According to still additional embodiments of the present invention, an electronic device may include a first electrode, a reaction suppressing layer on the first electrode, a dielectric oxide layer including titanium on the reaction suppressing layer, and a second electrode on the dielectric oxide layer. The reaction suppressing layer may include at least one of silicon nitride, silicon oxide, and/or silicon oxynitride. In addition, the dielectric oxide layer may also include tantalum, and the dielectric oxide layer may include a layer of tantalum titanium oxide. The electronic device may also include a substrate on the first electrode so that the first electrode is between the substrate and the reaction suppressing layer. [0017] In addition, a first portion of the dielectric oxide layer adjacent the reaction suppressing layer may have a first density of titanium, and a second portion of the dielectric oxide layer opposite the reaction suppressing layer may have a second density of titanium different than the first density. More particularly, the first density of titanium can be greater than the second density of titanium, with the first density of titanium in the range of approximately 0.1 to 15 percent and with the second density of titanium in the range of approximately 0.001 to 3 percent. In an alternative, the first density of titanium can be less than the second density of titanium, with the first density of titanium in the range of approximately 0.1 to 15 percent and with the second density of titanium in the range of approximately 10 to 20 percent. In addition, each of the first and second electrodes may include at least one of doped polysilicon, metal, metal oxide, metal nitride, and/or metal oxynitride. BRIEF DESCRIPTION OF THE DRAWINGS [0018] FIG. 1 is a cross-sectional view of a semiconductor device such as a memory device according to first embodiments of the present invention; [0019] FIGS. 2A through 2C are graphs illustrating density of titanium of a titanium tantalum oxide film with respect to the thickness of the titanium tantalum oxide film according to first embodiments of the present invention; [0020] FIG. 3 is a graph illustrating dielectric constants of a tantalum oxide film doped dopants; Continue reading... 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