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  Electrochemical plating apparatus and methodRelated Patent Categories: Electrolysis: Processes, Compositions Used Therein, And Methods Of Preparing The Compositions, Electrolytic Coating (process, Composition And Method Of Preparing Composition), Agitating Or Moving Electrolyte During CoatingThe Patent Description & Claims data below is from USPTO Patent Application 20060137989. Brief Patent Description - Full Patent Description - Patent Application Claims
[0001] This application claims the benefit of Korean Patent Application No. 10-2004-0111156, filed on Dec. 23, 2004, which is hereby incorporated by reference as if fully set forth herein. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to electrochemical plating, and more particularly to an electrochemical plating apparatus and method, which can improve uniformity of a metallic layer formed on a substrate using an anode made up of a plurality of metal bodies. [0004] 2. Discussion of the Related Art [0005] Electrochemical plating may be performed, for example, to fill a via or contact hole, or other a feature formed in a substrate (wafer), when forming a line of circuitry in an integrated circuit. Chemical vapor deposition or physical vapor deposition is typically used to deposit a barrier diffusion layer on the feature and to deposit a conductive metal seed layer on the barrier diffusion layer. Electrochemical plating uses an electrochemical plating apparatus to deposit on the seed layer a conductive metallic layer of, for example, copper, thereby filling the feature and covering the associated structure. Finally, a conductive wire is defined by planarizing the deposited metallic layer by, for example, chemical-mechanical polishing. [0006] During the electrochemical plating, the deposition of the metallic layer on the seed layer is accomplished by electrically biasing the seed layer of the substrate with respect to an anode, and the seed layer and the anode are both submerged in an electrolyte solution of an electrolyte cell. That is, a voltage is applied to the seed layer and referenced to the anode, such that the electrified seed layer attracts metal ions during deposition. [0007] Referring to FIG. 1, a contemporary electrochemical plating apparatus comprises an electrochemical cell 12 in which an anode 30 and a substrate 20 having a seed layer 40 thereon are submerged in an electrolyte solution 14 filling a process bath 10. The anode 30 is a conductive metal (e.g., copper) body, which is typically disposed at the lower end of the electrochemical cell 12, that is, in the bottom of the process bath 10. The substrate 20 is disposed in the electrochemical cell 12 opposite the anode 30 and is positioned so that the seed layer 40 faces the anode. A bias voltage (V) is applied across the anode 30 and the seed layer 40 to generate, within the electrolyte solution 14, an electrical field between the anode and seed layer, which is maintained during deposition. That is, the seed layer 40 is electrified for the deposition of the metallic layer, such that the electrolyte solution 14 in the electrochemical cell 12 acts as a medium to deliver metal ions that are supplied from the anode 30 to the seed layer 40 on the substrate 20, whereby the chemical reaction between the anode and electrolyte solution is augmented by applying the electrical charge. The electrical field is set to promote an enhanced deposition of the metallic layer on the seed layer 40 according to the lines of flux generated within the electrolyte solution 14, which extend to the substrate 20 from a point below the anode 30, thus passing through the anode. [0008] The formation of a uniform (e.g., even thickness) metallic layer on the seed layer 40 may depend on optimization of several factors, including an ion travel distance D (distance between the anode 30 and the substrate 20); a bath resistance R.sub.b (resistance of the electrolyte solution 14), which depends on the ion travel distance; and a seed resistance R.sub.s (resistance of the seed layer 40), which depends on the thickness and uniformity of the seed layer. Here, the bath resistance R.sub.b should be high and the seed resistance R.sub.s should be low (namely, by forming a thick seed layer having a high degree of uniformity). Also significantly influencing metallic layer formation is the configuration of the anode 30, which may constitute a continuous (planar) disc-shaped body having a flat upper surface (FIG. 2) or by one having an upper surface formed of a plurality of concentrically arranged, V-shaped grooves 32 (FIG. 3). Neither of these configurations, however, consider the ion travel distance D, which, when varied, changes the bath resistance and thus the current density between the anode 30 and the substrate 20, thereby affecting the uniformity of the metallic layer formed on the seed layer 40. [0009] For example, for an optimal bath resistance, the ion travel distance may be set to provide the substrate 20 with a metallic layer 42 having a uniform thickness as shown in FIG. 4A. Meanwhile, as shown in FIG. 4B, if the ion travel distance is increased to a first distance D.sub.1, the bath resistance may be maximized, but the increased resistance results in the formation of a metallic layer 42' exhibiting excessive thickness near the perimeter of the substrate 20 and thinner formations at its central portions. On the other hand, as shown in FIG. 4C, if the ion travel distance is decreased to a second distance D.sub.2, thereby lowering the bath resistance, the resulting formation is a metallic layer 42'' exhibiting excessive thickness near the center of the substrate 20 and thinner formations toward its perimeter. SUMMARY OF THE INVENTION [0010] Accordingly, the present invention is directed to an apparatus and a method for electrochemical plating that substantially obviate one or more problems due to limitations and disadvantages of the related art. [0011] An object of the present invention is to provide an apparatus and a method for electrochemical plating, which enhances uniformity of a metallic layer formed on a substrate. [0012] Another object of the present invention is to provide an electrochemical plating apparatus and method for forming a metallic layer on a substrate, which enables the distance between an anode body and the substrate to be independently controlled. [0013] Another object of the present invention is to provide an apparatus and a method for electrochemical plating for forming a metallic layer on a substrate, which enables an optimal bath resistance to be maintained across a wafer. [0014] Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings. [0015] To achieve these objects and other advantages in accordance with the purpose of the invention, as embodied and broadly described herein, there is provided an electrochemical plating apparatus comprising an electrochemical cell containing an electrolyte solution; a plurality of bodies arranged in the electrochemical solution to form an anode; a substrate having a seed layer thereon, disposed in the electrochemical cell opposite the anode, such that the anode and the seed layer are separated by an ion travel distance; and a distance controller for independently driving at least one of the plurality of bodies to control the ion travel distance. [0016] In another aspect of the present invention, there is provided a method for forming a metallic layer on a substrate having a seed layer, the method comprising arranging, in an electrolyte solution, a plurality of bodies as an anode so that the seed layer faces the anode; setting a distance between the seed layer and a corresponding body of the anode by independently driving at least one of the plurality of bodies; and generating an electrical field between the seed layer and the anode according to the set ion travel distance. [0017] It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. BRIEF DESCRIPTION OF THE DRAWINGS [0018] The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principle of the invention. In the drawings: [0019] FIG. 1 is a schematic view of a contemporary electrochemical plating apparatus; [0020] FIGS. 2 and 3 are each a combined plan view and cross-sectional view of the anode of FIG. 1, respectively showing different anode body configurations; [0021] FIGS. 4A-4C are each cross-sectional views of views of the electrochemical plating apparatus of FIG. 1, respectively illustrating formations of a metallic layer on a substrate according to an ion travel distance; Continue reading... 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