| Defect inspection apparatus and defect inspection method -> Monitor Keywords |
|
|
 
Defect inspection apparatus and defect inspection methodDefect inspection apparatus and defect inspection method description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20060238754, Defect inspection apparatus and defect inspection method. Brief Patent Description - Full Patent Description - Patent Application Claims
CROSS REFERENCE TO RELATED APPLICATION [0001] This application is a continuation application of International Application PCT/JP 2004/19370, filed Dec. 24, 2004, designating the U.S., and claims the benefit of priority from Japanese Patent Application No. 2003-434675, filed Dec. 26, 2003, the entire contents of which are incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a defect inspection apparatus and a defect inspection method for inspecting a defect in a semiconductor wafer or a liquid crystal substrate. [0004] 2. Description of the Related Art [0005] In a manufacturing process of semiconductor circuit elements and liquid crystal display elements, a defect inspection is performed for repetitive patterns formed in a resist layer on a surface of a semiconductor wafer or a liquid crystal substrate (generally referred to as a substrate). An automated defect inspection apparatus has a substrate placed on a tiltable stage, irradiates the surface of the substrate with illumination light for inspection, captures an image of the substrate according to the light (for example, primary diffracted light or specular light) that emerges from the repetitive patterns on the substrate, and detects a defect in the repetitive pattern based on brightness information on the image (for example, refer to Japanese Unexamined Patent Application Publication No. 2002-162367). Further, by adjusting the tilt of the stage, it is possible to perform the defect inspection for repetitive patterns having different pitches. Also, it is possible to cope with minute pitches by shortening the wavelength of illumination light. [0006] However, the brightness information of the image captured for defect inspection contains not only defect information of the repetitive patterns formed in the resist layer as the uppermost layer but also information resulting from noise light from the underlying layer. [0007] Therefore, in the prior art there are some cases where a large amount of the noise light from the underlying layer prevents a defect inspection with a good S/N ratio (for example, where repetitive patterns are formed in the underlying layer with a pitch which is approximately the same as that of a resist layer, etc.). Note that the noise light from the underlying layer is part of illumination light for inspection that has once passed through the resist layer, reached and reflected from (diffracted by) the underlying layer, and passed through the resist layer again. SUMMARY OF THE INVENTION [0008] An object of the present invention is to provide a defect inspection apparatus and a defect inspection method which can surely reduce noise light from an underlying layer and perform a good defect inspection. [0009] A defect inspection apparatus of the present invention is provided with an illumination device that irradiates with illumination light a substrate to be inspected including a resist layer having cyclic patterns are formed on an upper layer, and an optical image forming system that forms an image of the substrate to be inspected according to the light that emerges from the substrate to be inspected by the irradiation with the illumination light. Therein, an antireflection layer is formed immediately below the resist layer and the wavelength of the illumination light is set in accordance with information on an absorption wavelength band of the antireflection layer. [0010] Preferably, in the above-mentioned defect inspection apparatus, the information on the absorption wavelength band is an optical absorption spectrum of the antireflection layer. [0011] Preferably, the above-mentioned defect inspection apparatus is also provided with a wavelength band input unit that inputs information on the absorption wavelength band of the antireflection layer and a setting unit that sets a wavelength of the illumination light to a wavelength or a wavelength band included in the absorption wavelength band inputted from the wavelength band input unit. [0012] Preferably, in the above-mentioned defect inspection apparatus, the wavelength of the illumination light is set to an exposure wavelength of exposure equipment which is used to form the cyclic patterns. [0013] Preferably, the above-mentioned defect inspection apparatus is provided with a sensitivity input unit that inputs information on the sensitivity of the resist layer at the wavelength of the illumination light and a control unit that aborts irradiating the substrate to be inspected with the illumination light when a dose of the illumination light reaches its limit dose which is determined in accordance with the sensitivity inputted from the sensitivity input unit. [0014] Further, the defect inspection method of the present invention includes the steps of irradiating with illumination light a substrate to be inspected including a resist layer having cyclic patterns formed on the upper layer; generating an image of the substrate to be inspected by capturing an image according to light that emerges from the substrate to be inspected by the irradiation with the illumination light; and detecting a defect in the cyclic patterns based on brightness information on the image of the substrate to be inspected, in which the wavelength of the illumination light is set in accordance with the optical absorption spectrum of the antireflection layer. [0015] Preferably, the above-mentioned defect inspection method further includes the step of setting the wavelength of the illumination light to an exposure wavelength of the exposure equipment which is used to form the cyclic patterns. [0016] Preferably, the above-mentioned defect inspection method further includes the step of aborting irradiating the substrate to be inspected with the illumination light when a dose of the illumination light reaches its limit dose which is determined in accordance with the sensitivity of the resist layer at the wavelength of the illumination light. BRIEF DESCRIPTION OF THE DRAWINGS [0017] FIG. 1 is a diagram showing an entire configuration of a defect inspection apparatus 10; [0018] FIG. 2 is a schematic diagram for explaining a cross-sectional configuration of a semiconductor wafer 11; [0019] FIG. 3 is a schematic diagram for explaining a cross-sectional configuration of a semiconductor wafer 50; [0020] FIG. 4 is a diagram showing a configuration of a defect inspection apparatus 60; Continue reading about Defect inspection apparatus and defect inspection method... Full patent description for Defect inspection apparatus and defect inspection method Brief Patent Description - Full Patent Description - Patent Application Claims Click on the above for other options relating to this Defect inspection apparatus and defect inspection method patent application. ###  How KEYWORD MONITOR works... a FREE service from FreshPatents1. Sign up (takes 30 seconds). 2. Fill in the keywords to be monitored. 3. Each week you receive an email with patent applications related to your keywords. Start now! - Receive info on patent apps like Defect inspection apparatus and defect inspection method or other areas of interest. ### Previous Patent Application: Method of detecting an edge bead removal line on a wafer Next Patent Application: Particle inspection apparatus and method, exposure apparatus, and device manufacturing method Industry Class: Optics: measuring and testing ### FreshPatents.com Support Thank you for viewing the Defect inspection apparatus and defect inspection method patent info. IP-related news and info Results in 0.12859 seconds Other interesting Feshpatents.com categories: Software: Finance , AI , Databases , Development , Document , Navigation , Error 174 |
 * Protect your Inventions * US Patent Office filing 
PATENT INFO |
|
