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Cpp read sensor fabrication using heat resistant photomaskRelated Patent Categories: Semiconductor Device Manufacturing: Process, Introduction Of Conductivity Modifying Dopant Into Semiconductive Material, Diffusing A Dopant, Using Multiple Layered MaskCpp read sensor fabrication using heat resistant photomask description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20060234483, Cpp read sensor fabrication using heat resistant photomask. Brief Patent Description - Full Patent Description - Patent Application Claims
BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates generally to fabrication of electronic components and particularly to fabrication of components for disk drive heads. [0003] 2. Description of the Prior Art [0004] Photomasking is a technique which is commonly used in making electronic components. It is especially useful in many patterned deposition processes in which layers are deposited one upon another, but there may be a need to block off certain areas from the deposition of one or more layers. This is commonly done by depositing photomask material, usually a photo-resist material, which hardens when exposed to certain wavelengths of light, to mask off certain areas. Unexposed areas of the photoresist material are then removed. After the deposition of the layer is done, the photomask is removed, or lifted off, taking the deposition material with it to leave an un-coated portion. [0005] Conventional prior art photomask materials are useful for certain operations which can be accomplished within a range of lower temperatures. However, certain other operations which are becoming more widely used, must be conducted at higher temperatures, for which these prior art photomask materials are not suited. [0006] One example which illustrates the limitations of prior art photomask materials can be found in the fabrication of disk drive heads. TMR (Tunnel Magnetoresistance) and other CPP (Current Perpendicular to the Plane) read head devices utilize a dielectric layer to confine electrical current to the sensor area. Since practical CPP devices in the deep submicron regime require self-aligned processing for patterning and isolation, the patterning techniques used must be compatible with the deposition techniques for each of the layers. Conventional photo processing materials poorly tolerate temperatures in excess of 130 degrees C. limiting applicable deposition techniques for the dielectric layer to those that are PVD (Physical Vapor Deposition)-based. PVD-based deposition techniques lack the conformality and low defect density of CVD (Chemical Vapor Deposition) techniques such as ALD (Atomic Layer Deposition). A complete review of ALD-based deposition techniques and their benefits is described by Ritala and Leskela in Handbook of Thin Film Materials, H. S. Nalwa, Ed., Academic Press, San Diego (2001) Vol 1, Chapter 2 (ISBN 0-12-512908-4). [0007] Thus there is a need for a photomask material which will not degrade at temperatures necessary for CVD processes. There is a further need for a method of fabrication of disk drive read heads which uses high temperature photomasks when using high temperature processes such as ALD. SUMMARY OF THE INVENTION [0008] A preferred embodiment of the present invention is a method for fabricating a CPP read head for a magnetic head of a hard disk drive having an electrical isolation layer. The method includes providing a first magnetic shield layer, and depositing a sensor stack on the first magnetic shield layer. Next, a CMP (Chemical Mechanical Polishing) stop layer is deposited on the sensor stack, and a release layer is deposited on the CMP stop layer. Photoresist material containing Si is deposited on the release layer, and the photoresist material is then patterned to form protected areas in the underlying materials. The photoresist material is then oxidized by use of Reactive Ion Etching (RIE) to form a high temperature photomask and to transfer the photo image into the release layer. Ion milling or RIE is then used to transfer this image into the sensor stack. The electrical isolation layer is then deposited to surround the sensor stack using a high temperature deposition process such as Chemical Vapor Deposition, where the high temperature photomask protects areas of the underlying material during the high temperature deposition process. The present invention is compatible with processes that require higher temperature than those allowed by prior art photomasks, and these processes may produce better conformality and fewer defects. These temperatures enable the use of ALD technology using TMAl (TriMethylAluminum) and Water precusors to grow Al.sub.2O.sub.3 with excellent electrical properties and step coverage. Temperatures substantially below this increase the concentration of Carbon in the film, degrading its properties. In addition, the use of low temperatures in commercially-available ALD reactors cause premature delamination of the as-grown films from the reactor walls, making the process not commercially viable. [0009] If the sensor is an in-stack bias sensor, a draped magnetic shield material layer is deposited on the electrical isolation layer and a second CMP stop layer is deposited on the draped magnetic shield material layer. The isolation layer and the draped magnetic shield material layer are then planarized to the level of the sensor stack to form a planarized structure, upon which a second magnetic shield layer is deposited. [0010] If the sensor is an external bias sensor, a hard bias material layer is deposited on the electrical isolation layer and a second CMP stop layer is deposited on the hard bias material layer. The isolation layer and the hard bias material layer are then planarized to the level of the sensor stack to form a planarized structure, upon which a second magnetic shield layer is deposited. [0011] It is an advantage of the present invention that it provides a photomask material that is useful above 130 degrees C. [0012] It is a further advantage that the present invention provides a photomask material that can be used with CVD processes. [0013] It is a yet further advantage that the present invention provides a photomask material that can be used in the fabrication of CPP read heads having an insulation layer which is deposited by using ALD. [0014] It is another advantage that the present invention is compatible with processes that require higher temperature than those allowed by prior art photomasks, and these processes may produce better conformality and fewer defects. [0015] These and other features and advantages of the present invention will no doubt become apparent to those skilled in the art upon reading the following detailed description which makes reference to the several figures of the drawing. IN THE DRAWINGS [0016] The following drawings are not made to scale as an actual device, and are provided for illustration of the invention described herein. [0017] FIG. 1 shows a top plan view of an exemplary disk drive; [0018] FIG. 2 illustrates a perspective view of view of an exemplary slider and suspension; [0019] FIG. 3 shows a top plan view of an exemplary read/write head; [0020] FIG. 4 is a cross-section view of an exemplary read/write head; [0021] FIGS. 5-8 shows show front plan views of various stages in the fabrication of the CPP read head of the present invention; Continue reading about Cpp read sensor fabrication using heat resistant photomask... Full patent description for Cpp read sensor fabrication using heat resistant photomask Brief Patent Description - Full Patent Description - Patent Application Claims Click on the above for other options relating to this Cpp read sensor fabrication using heat resistant photomask patent application. ###  How KEYWORD MONITOR works... a FREE service from FreshPatents1. Sign up (takes 30 seconds). 2. Fill in the keywords to be monitored. 3. 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