| Cooled pvd shield -> Monitor Keywords |
|
|
  Cooled pvd shieldUSPTO Application #: 20080006523Title: Cooled pvd shield Abstract: The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time. (end of abstract)
Agent: Patterson & Sheridan, LLP - Houston, TX, US Inventors: Akihiro Hosokawa, Bradley O. Stimson, Hienminh Huu Le, Makoto Inagawa USPTO Applicaton #: 20080006523 - Class: 2041921 (USPTO) The Patent Description & Claims data below is from USPTO Patent Application 20080006523. Brief Patent Description - Full Patent Description - Patent Application Claims
CROSS-REFERENCE TO RELATED APPLICATIONS [0001]This application claims benefit of U.S. provisional patent application Ser. No. 60/805,858 (APPM/011276L), filed Jun. 26, 2006, which is herein incorporated by reference. BACKGROUND OF THE INVENTION [0002]1. Field of the Invention [0003]Embodiments of the present invention generally relate to a cooled shield used in a physical vapor deposition (PVD) system. [0004]2. Description of the Related Art [0005]PVD using a magnetron is one method of depositing material onto a substrate. During a PVD process a target may be electrically biased so that ions generated in a process region can bombard the targyet surface with sufficient energy to dislodge atoms from the target. The process of biasing a target to cause the generation of a plasma that causes ions to bombard and remove atoms from the target surface is commonly called sputtering. The sputtered atoms travel generally toward the substrate being sputter coated, and the sputtered atoms are deposited on the substrate. Alternatively, the atoms react with a gas in the plasma, for example, nitrogen, to reactively deposit a compound on the substrate. Reactive sputtering is often used to form thin barrier and nucleation layers of titanium nitride or tantalum nitride on the substrate. [0006]Direct current (DC) sputtering and alternating current (AC) sputtering are forms of sputtering in which the target is biased to attract ions towards the target. The target may be biased to a negative bias in the range of about -100 to -600 V to attract positive ions of the working gas (e.g., argon) toward the target to sputter the atoms. Usually, the sides of the sputter chamber are covered with a shield to protect the chamber walls from sputter deposition. The shield may be electrically grounded and thus provide an anode in opposition to the target cathode to capacitively couple the target power to the plasma generated in the sputter chamber. [0007]During sputtering, material may sputter and deposit on the exposed surfaces within the chamber. As chamber components are moved, material that has been deposited thereon may flake off and contaminate the substrate. As temperatures fluxuate from a processing temperature to a lower, non-processing temperature, material may additionally flake off of a moving component. [0008]When depositing thin films over substrates such as wafer substrates, glass substrates, flat panel display substrates, solar panel substrates, and other suitable substrates, flaking may contaminate the substrate. Therefore, there is a need in the art to reduce flaking in PVD chambers. SUMMARY OF THE INVENTION [0009]The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time. [0010]In one embodiment, a physical vapor deposition apparatus is disclosed. The apparatus comprises a shadow frame movable between a lowered position and a raised position, a top shield which at least partially overlies the shadow frame, and a cooling manifold coupled with the top shield, wherein the cooling manifold controls the temperature of the top shield. [0011]In another embodiment, a physical vapor deposition apparatus is disclosed. The apparatus comprises a chamber, a susceptor disposed in the chamber and movable between a raised position and a lowered position, a shadow frame positioned to shield a periphery of the susceptor when the susceptor is in the raised position, the shadow frame movable between a raised position and a lowered position, and a top shield positioned to shield at least a portion of the shadow frame, wherein the top shield is cooled. [0012]In another embodiment, a method of processing a substrate is disclosed. The method comprises positioning a target over a susceptor within a processing chamber, wherein the processing chamber comprises a shadow frame that shields an edge of the susceptor from deposition and a top shield that shields the shadow frame from deposition and sputtering material form the target onto the substrate to deposit a layer on the substrate. [0013]In another embodiment, a physical vapor deposition method is disclosed. The method comprises positioning a substrate on a susceptor within a chamber, the susceptor movable between a raised position and a lowered position, the chamber comprising shadow frame movable between a raised position and a lowered position and a top shield, wherein the top shield at least partially shields the shadow frame, raising the susceptor and shadow frame to a processing position, and depositing material on the substrate, wherein the top shield reduces the amount of deposition on the shadow frame. [0014]In another embodiment, a shield kit is disclosed. The kit comprises a manifold shelf, a cooling manifold coupled with the manifold shelf, wherein cooling channels are coupled within the cooling manifold, a top shield coupled with the cooling manifold, wherein the top shield has an interior width that is less than the interior width of the cooling manifold, and an under shield coupled with the cooling manifold, wherein the under shield has an interior width that is greater than the interior width of the top shield, but less than the interior width of the cooling manifold. BRIEF DESCRIPTION OF THE DRAWINGS [0015]So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments. [0016]FIG. 1 is a schematic view of an apparatus with the susceptor in a raised position according to one embodiment of the invention. [0017]FIG. 2 is a schematic view of the apparatus of FIG. 1 with the susceptor in the lowered position. [0018]FIG. 3 is a close up view of the top shield of FIG. 1 with the susceptor in the raised position. [0019]FIG. 4 is a cut away view of the bottom section of a PVD chamber according to one embodiment of the invention. [0020]To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation. Continue reading... Full patent description for Cooled pvd shield Brief Patent Description - Full Patent Description - Patent Application Claims Click on the above for other options relating to this Cooled pvd shield patent application. ###  How KEYWORD MONITOR works... a FREE service from FreshPatents1. Sign up (takes 30 seconds). 2. Fill in the keywords to be monitored. 3. Each week you receive an email with patent applications related to your keywords. Start now! - Receive info on patent apps like Cooled pvd shield or other areas of interest. ### Previous Patent Application: Method for initiating a pulsed arc discharge for nanopowder synthesis Next Patent Application: Method of producing metal-oxide film Industry Class: Chemistry: electrical and wave energy ### FreshPatents.com Support Thank you for viewing the Cooled pvd shield patent info. IP-related news and info Results in 1.79721 seconds Other interesting Feshpatents.com categories: Electronics: Semiconductor , Audio , Illumination , Connectors , Crypto , |
||
