Coherent light generators inventions

20090262760 - Laser obstacle ranging and display: Apparatus, for detecting at least one object and preventing receiver burn-out, mounted on a vehicle, including a laser and at least one receiver, the receiver being coupled with the laser, the laser for transmitting a beam of light and the receiver for detecting reflections of the beam of light from... Agent: Cooley Godward Kronish LLP Attn: Patent Group

20090262761 - Pulsed linearly polarized optical fiber laser using unpolarized q-switched seed laser and having good output power stability: Optical fiber source for providing polarized optical pulses, comprising a Q-switched fiber laser for providing substantially unpolarized seed pulses of optical energy, where the Q-switched fiber laser can comprise a laser cavity having a Q-switch and an optical fiber comprising a gain medium, where the optical fiber need not be... Agent: Nufern Peter J. Rainville

20090262762 - Laser device and controlling method therefor: A laser device capable of preventing deterioration of a light signal and a controlling method therefor are provided. A wavelength tunable laser module provided with a resonator including the wavelength tunable filter and a semiconductor light amplifier having a phase adjustment region and a light amplifying region, in which a... Agent: Antonelli, Terry, Stout & Kraus, LLP

20090262763 - Large-sized bismuth-zinc-borate nonlinear optical crystal and preparation methods and applications thereof: The present invention relates to a large-sized and high-quality bismuth-zinc-borate (Bi.sub.2 ZnB.sub.2 O.sub.7) single crystal, preparation methods and applications thereof. The crystal has cross-sectional dimensions greater than one centimeter, a nonlinear optical effect of about 3-4 times that of KH.sub.2 PO.sub.4 (KDP), and an optical transmission wavelength range of 330-3300... Agent: Robert E. Bushnell & Law Firm

20090262764 - Blue extended super continuum light source: Phase match between red shifted Raman solitons generated by the pump pulse and energy shed by the pump pulse at all frequencies with a group velocity below the pump pulse group velocity will lead to the formation of Cherenkov radiation. The solitons or “light bullets” will seed Cherenkov radiation in... Agent: Buchanan, Ingersoll & Rooney PC

20090262766 - Active terahertz metamaterial devices: Metamaterial structures are taught which provide for the modulation of terahertz frequency signals. Each element within an array of metamaterial (MM) elements comprises multiple loops and at least one gap. The MM elements may comprise resonators with conductive loops and insulated gaps, or the inverse in which insulated loops are... Agent: John P. O'banion O'banion & Ritchey LLP

20090262765 - Small dimension high-efficiency high-speed vertical-cavity surface-emitting lasers: A Vertical-Cavity Surface-Emitting Laser (VCSEL) is disclosed, comprising an optical cavity bounded by a top mirror and a bottom mirror, wherein the top mirror has multiple layers of alternating refractive index, of which the bottom three or more layers of the top mirror are deep oxidation layers having an increased... Agent: Gates & Cooper LLP Howard Hughes Center

20090262767 - Liquid cooled laser bar arrays incorporating diamond/copper expansion matched materials: A laser diode array having a plurality of diode bars bonded by a hard solder to expansion matched spacers and mounted on a gas or liquid cooled heatsink. The spacers are formed of a material such as copper/diamond composite material having a thermal expansion that closely matches that of the... Agent: Hayes Soloway P.C.

20090262768 - Compact mid-ir laser: A compact mid-IR laser device utilizes a quantum cascade laser to provide mid-IR frequencies suitable for use in molecular detection by signature absorption spectra. The compact nature of the device is obtained owing to an efficient heat transfer structure, the use of a small diameter aspheric lens and a monolithic... Agent: Roeder & Broder LLP

20090262769 - Laser drive circuit and use: A laser drive circuit and use of digital-to-analog converters is provided, each with a current input and a current output to set current values of partial currents switchable by means of digital channel signals to provide a laser current pulse at least on the basis of a sum of partial... Agent: Muncy, Geissler, Olds & Lowe, PLLC

20090262770 - Surface-emission laser diode, surface-emission laser diode array, optical scanning apparatus and image forming apparatus: A surface-emission laser diode of a vertical-cavity surface-emission laser structure includes a substrate and a mesa structure formed on the substrate, the mesa structure including therein a current confinement structure, wherein the current confinement structure includes a conductive current confinement region and an insulation region surrounding the conductive current confinement... Agent: Cooper & Dunham, LLP

20090262771 - Semiconductor laser device and method of manufacturing the same: A semiconductor laser device capable of suppressing damage of a waveguide is obtained. This GaN-based semiconductor laser chip (semiconductor laser device) includes an n-type GaN substrate of a nitride-based semiconductor and a semiconductor layer of a nitride-based semiconductor formed on the n-type GaN substrate and provided with a ridge portion... Agent: Ditthavong Mori & Steiner, P.C.

20090262772 - Semiconductor laser device and method of fabricating the same: A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having... Agent: Mcdermott Will & Emery LLP

20090262773 - Optoelectronic semiconductor component with current spreading layer: An optoelectronic semiconductor component comprising a semiconductor body (10) and a current spreading layer (3) is specified. The current spreading layer (3) is applied to the semiconductor body (10) at least in places. In this case, the current spreading layer (3) contains a metal (1) that forms a transparent electrically... Agent: Cohen, Pontani, Lieberman & Pavane LLP

20090262774 - Sliced fiber bragg grating used as external cavity for semiconductor laser and solid state laser: A Fiber Bragg grating is sliced into small segments (such as 1 mm in length), the sliced fiber Bragg grating segments are used as external cavities for lasers to stabilize their center wavelength. In one embodiment, a semiconductor laser has an anti-reflection coating on the front facet and a high... Agent: Pin Long

20090262775 - Surface emitting laser: A surface emitting laser which oscillates at a wavelength X of a blue band, including a photonic crystal layer including a photonic crystal structure, an active layer provided on one surface of the photonic crystal layer, and an electrode provided on the other surface of the photonic crystal layer for... Agent: Fitzpatrick Cella Harper & Scinto

20090257460 - External resonator variable wavelength laser and its packaging method: The reflectance of a semiconductor optical amplifier (1) on the side where an external cavity is formed is 0.1% at most. The finesse value obtained by dividing the period of the transmission characteristic of the wavelength selection filter (3) by the half value width of the transmission characteristic is 4... Agent: Young & Thompson

20090257461 - Process and apparatus for a wavelength tuning source: An apparatus and source arrangement for filtering an electromagnetic radiation can be provided which may include at least one spectral separating arrangement configured to physically separate one or more components of the electromagnetic radiation based on a frequency of the electromagnetic radiation. The apparatus and source arrangement may also have... Agent: Dorsey & Whitney LLP Intellectual Property Department

20090257462 - Laser device, laser display device, and laser irradiation device: The present invention provides a laser device having a high wavelength conversion efficiency and a wide wavelength width, and is suitable as a display light source. The laser device includes a fundamental wave generating section including a laser diode which has a plurality of luminous points and a bragg reflection... Agent: Rader Fishman & Grauer PLLC

20090257463 - Laser light source, image display apparatus, and processing apparatus: A laser light source includes a fundamental laser generator that generates a fundamental laser light, a wavelength conversion element that is made of a ferroelectric crystal with a periodically poled structure and converts the fundamental laser light to a laser light having a different wavelength, a holding member that holds... Agent: Wenderoth, Lind & Ponack L.L.P.

20090257464 - Control system and apparatus for use with ultra-fast laser: A control system and apparatus for use with an ultra-fast laser is provided. In another aspect of the present invention, the apparatus includes a laser, pulse shaper, detection device and control system. A multiphoton intrapulse interference method is used to characterize the spectral phase of laser pulses and to compensate... Agent: Harness, Dickey & Pierce, P.L.C

20090257465 - Portable laser device: A hand-held laser device includes a casing formed with a substantially hollow interior space and having a laser emitter thereinside. The laser emitter is formed with an exciting lamp and a laser rod. A source generating a stream of gaseous coolant is provided within the interior space. A fluid cooling... Agent: Lawrence G. Fridman, Esq. Silber & Fridman. Esqs.

20090257466 - Optoelectronic semiconductor component and method for the production of an optoelectronic semiconductor device: In at least one embodiment, the optoelectronic semiconductor component includes an optically active area that is formed with a crystalline semiconductor material that contains at least one of the substances gallium or aluminum. Furthermore, the semiconductor component contains at least one facet on the optically active area. Furthermore, the semiconductor... Agent: Slater & Matsil, L.L.P.

20090257467 - Group iii nitride semiconductor device and method for manufacturing group iii nitride semiconductor device: A laser diode 300 includes a p-type GaN guide layer 107, a current confinement layer 314 provided on the p-type GaN guide layer 107 and having an opening 314A formed therein, and a p-type cladding layer 108 provided on the current confinement layer 314 and plugging the opening 314A formed... Agent: Foley And Lardner LLP Suite 500

20090257468 - Communication devices that include a coherent light source configured to project light through a translucent portion of a housing and methods of operating the same: A communication device includes communication circuitry, a coherent light source, and a housing that at least partially surrounds the communication circuitry and the coherent light source. The housing includes a translucent portion and the coherent light source is configured so as to project light through the translucent portion of the... Agent: Myers Bigel Sibley & Sajovec, P.A.

20090252183 - An optical device for addressing a slave cavity with a wide-band laser source: The invention concerns an optical device comprising an optical source for emitting a light beam in a plurality of emitting wavelengths and at least one laser, each of said at least one laser including a holographic medium (MH), means for injecting (FO, MCS, MUX, CO, IO, AV) said light beam... Agent: Harness, Dickey & Pierce, P.L.C

20090252185 - Laser light source device, illumination device, image display device, and monitor device: A laser light source device includes: a light source; an external resonator; a wavelength conversion element converting the wavelength of part of incident light having the first wavelength into the second wavelength which is different from the first wavelength; and an optical-path conversion element causing the light that has been... Agent: Oliff & Berridge, PLC

20090252184 - Laser oscillator and laser processing apparatus: A laser oscillator of a laser processing apparatus includes a pair of terminating mirrors, between which a straight light path lies, and also includes a ¼ wavelength plate, an active medium, a higher harmonic wave separating/outputting mirror, a condensing lens, and a nonlinear optical crystal (wavelength converting crystal) that are... Agent: Wenderoth, Lind & Ponack, L.L.P.

20090252186 - Coherent light display system: A display system includes a coherent light source that can emit a coherent light beam, an optical component that can direct the coherent light beam to a spatial light modulator, a transport mechanism that can move the optical component to produce a movement in the coherent light beam, and a... Agent: Fish & Richardson P.C.

20090252187 - Minimizing power variations in laser sources: The present invention relates generally to semiconductor lasers and laser projection systems. According to one embodiment of the present invention, a projected laser image is generated utilizing an output beam of the semiconductor laser. A gain current control signal is generated by a laser feedback loop to control the gain... Agent: Corning Incorporated

20090252188 - Misalignment prevention in an external cavity laser having temperature stabilisation of the resonator and the gain medium: The present invention relates to an external-cavity laser module comprising a thermoelectric cooler (TEC) including an upper carrier plate having an upper surface, said TEC being configured to stabilise the temperature of the upper surface at a substantially constant temperature. The laser module further comprises a laser assembly mounted on... Agent: Volpe And Koenig, P.C.

20090252189 - Semiconductor laser apparatus and optical apparatus: A semiconductor laser apparatus comprises a first semiconductor laser device that emits a blue-violet laser beam, a second semiconductor laser device that emits a red laser beam, and a conductive package body. The first semiconductor laser device has a p-side pad electrode and an n-side electrode. The p-side pad electrode... Agent: Mcdermott Will & Emery LLP

20090252190 - Semiconductor optical device and method of fabricating the same: In a method of fabricating a semiconductor optical device, a semiconductor region is formed by growing an InP lower film, a active region, an InP upper film and a capping film on a substrate sequentially. Material of the capping film is different from that of InP. Next, a mask is... Agent: Smith, Gambrell & Russell

20090252191 - Semiconductor laser device: A semiconductor laser device is made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane or a semipolar plane. The semiconductor laser device includes a cavity having an active layer containing In and distributed Bragg reflectors coating both cavity end faces of the... Agent: Rabin & Berdo, PC

20090252192 - Reduced feedback optical transmitter: A device including a laser with reduced feedback.... Agent: Allen, Dyer, Doppelt, Milbrath & Gilchrist P.A.