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Coherent light generators

20130148673 - Method for beam combination by seeding stimulated brillouin scattering in optical fiber: A system and method for efficiently combining multiple laser beams into a single frequency by invoking stimulated Brillouin scattering (SBS) in a dual core optical fiber is disclosed. The method and apparatus essentially becomes a brightness converter for the input laser beams. An SRS seed is generated in a long... Agent: Bae Systems Information And Electronic Systems Integration Inc.

20130148674 - Laser apparatus, extreme ultraviolet light generation system, method for controlling the laser apparatus, and method for generating the extreme ultraviolet light: A laser apparatus may include: a master oscillator configured to output a pulsed laser beam at a repetition rate, the master oscillator including at least one semiconductor laser apparatus; at least one amplifier configured to amplify the pulsed laser beam from the master oscillator, the at least one amplifier being... Agent: Gigaphoton Inc.

20130148675 - Laser diode for controlling spatial hole burning and optical pulse generating method: A high-efficiency laser diode is provided. Since a λ/4 phase-shifted distributed feedback (DFB) laser diode has a great coupling coefficient, mode stability is poor due to spatial hole burning when multiplication of the coupling coefficient by length of a resonator is equal to or greater than 2. In the inventive... Agent: Electronics And Telecommunications Research Institute

20130148677 - Extreme ultraviolet light source device, laser light source device for extreme ultraviolet light source device, and method of adjusting laser light source device for extreme ultraviolet light source device: An EUV light source device properly compensates the wave front of laser beam which is changed by heat. A wave front compensator and a sensor are provided in an amplification system which amplifies laser beam. The sensor detects and outputs changes in the angle (direction) of laser beam and the... Agent: Gigaphoton Inc.

20130148676 - Wavelength monitor, wavelength lockable laser diode and method for locking emission wavelength of laser diode: A wavelength monitor monolithically integrated with a tunable LD is disclosed. The wavelength monitor includes at least two filters, each having a periodic transmission spectrum but a period between nearest neighbor periods is different from the other. A transmittance of the first filter and another transmittance of the second filter... Agent: Sumitomo Electric Industries, Ltd.

20130148678 - Quantum cascade laser source with ultrabroadband spectral coverage: A broadband quantum cascade laser includes multiple gain regions and a spacer layer disposed between at least two of the gain regions. The arrangement and characteristics of the gain regions and the spacer layer may be configured to reduce cross absorption between the gain regions. For example, one gain region... Agent: President And Fellows Of Harvard College

20130148679 - Optical pumping of a solid-state gain-medium using a diode-laser bar stack with individually addressable bars: A diode-laser bar stack includes a plurality of diode-laser bars having different temperature dependent peak-emission wavelengths. The stack is arranged such that the bars can be separately powered. This allows one or more of the bars to be “on” while others are “off”. A switching arrangement is described for selectively... Agent: Coherent, Inc.

20130148680 - Circuit and method for limiting current to prevent roll-over in laser diodes: The present disclosure relates to an optical power monitoring circuit including an automatic power control (APC) loop and a microcontroller unit (MCU), and a method for monitoring the same. The APC loop comprises a laser diode (LD) and a feedback loop to maintain a laser optical power. The MCU is... Agent:

20130148681 - Method of manufacturing semiconductor laser device and semiconductor laser device: There is provided a method of manufacturing a semiconductor laser device. The method includes: preparing a production substrate on a hexagonal-system group III nitride semiconductor substrate having a semi-polar plane, the production substrate having an epitaxial layer that includes a luminous layer of a semiconductor laser device; forming a cutting... Agent: Sony Corporation

20130148682 - Plasmon lasers at deep subwavelength scale: Hybrid plasmonic waveguides are described that employ a high-gain semiconductor nanostructure functioning as a gain medium that is separated from a metal substrate surface by a nanoscale thickness thick low-index gap. The waveguides are capable of efficient generation of sub-wavelength high intensity light and have the potential for large modulation... Agent: The Regents Of The University Of California

20130148683 - Laser light source and method for producing a laser light source: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates,... Agent: Osram Opto Semiconductors Gmbh

20130148684 - High-brightness spatial-multiplexed multi-emitter pump with tilted collimated beam: Multi-mode diode emitters are stacked in a staircase formation to provide a spatially-mulitplexed output. Improved coupling efficiency is achieved by providing tilted collimated output beams that determine an effective step height of the stepped structure. Since the effective step height is dependent on the tilt angle, a variable number of... Agent: Jds Uniphase Corporation

20130148685 - Two-laser generation of extended underwater plasma: A method for generating an extended underwater plasma. A first laser pulse is fired into a body of water to form an underwater optical filament coinciding with a low-energy plasma. A second laser pulse is fired into the water, targeted at the plasma. The second pulse heats the plasma, causing... Agent:

20130142207 - Pulse compression systems and methods: A non-linear FM pulse compression system includes a non-linear FM transmitter adapted to receive an input signal and transmit an output signal. The non-linear FM transmitter is adapted to modulate the frequency of the output signal by at least one of the following: increasing the frequency of the output signal... Agent:

20130142208 - Optical amplifier and laser incorporating such an amplifier: A high-gain optical amplifier for a wave to be amplified at a wavelength referred to as the emission wavelength, includes: optical pumping elements (4) producing a pump wave at a wavelength referred to as the pump wavelength; a solid amplifying medium (1) that is doped with active ions, the solid... Agent: Amplitude Systemes

20130142209 - Semiconductor laser element and method of manufacturing the same: A method of manufacturing a semiconductor laser element including: preparing a wafer; forming first grooves on at least one of an upper surface and a lower surface of the wafer, each of the first grooves being spaced apart from the optical waveguide formed in the wafer and extending in a... Agent: Nichia Corporation

20130142210 - Nitride semiconductor light emitting device: A nitride semiconductor light-emitting device has a semiconductor ridge, and includes a first inner-layer between an active layer and an n-type cladding and a second inner-semiconductor layer between the active layer and a p-type cladding. The first inner-layer, active layer and second inner-layer constitute a core-region. The n-type cladding, core-region... Agent: Sumitomo Electric Industries, Ltd.

20130142211 - Parallel optical transceiver module: A silicon-on-insulator wafer is provided. The silicon-on-insulator wafer includes a silicon substrate having optical vias formed therein. In addition, an optically transparent oxide layer is disposed on the silicon substrate and the optically transparent oxide layer is in contact with the optical vias. Then, a complementary metal-oxide-semiconductor layer is formed... Agent: International Business Machines Corporation

20130136146 - Temperature control of a fiber laser system: Techniques and architecture are disclosed for controlling the temperature of a fiber laser system. In some embodiments, a single thermoelectric cooler (TEC) may be utilized to control the temperature of multiple system components. In some embodiments, a TEC may be physically/thermally coupled to a laser diode, which in turn may... Agent: Bae Systems Information And Electronic Systems Integration Inc.

20130136147 - Tunable mode locked laser: A laser for emitting simultaneously a first and second laser lights having respectively first and second wavelength differing from each other. The laser comprises: an optical resonator defining a first optical path and a second optical path, the first laser light travelling along the first optical path and the second... Agent:

20130136148 - Quantum cascade laser design with stepped well active region: Included are embodiments of a quantum cascade laser structure. Some embodiments include a plurality of quantum wells and a plurality of barriers, at least a portion of which define an active region. In some embodiments, a photon is emitted in the active region when an electron transitions from an upper... Agent:

20130128904 - Fiber laser pumping configuration and method: The invention is an apparatus and method for free space pumping of active double-clad fiber based lasers and amplifiers. The apparatus comprises a laser emitting a signal laser beam; an active double-clad fiber having a core defining an optical axis of the apparatus and a pump cladding defining a cone... Agent: Ben-gurion University Of The Negev Research And De Authority

20130128905 - Broadband laser source for laser thermal processing and photonically activated processes: A laser that emits light at all available frequencies distributed throughout the spectral bandwidth or emission bandwidth of the laser in a single pulse or pulse train is disclosed. The laser is pumped or seeded with photons having frequencies distributed throughout the superunitary gain bandwidth of the gain medium. The... Agent:

20130128906 - Laser oscillation apparatus: Provided is a laser oscillation apparatus capable of stabilizing resonance even when finesse of an optical resonator is increased and generating stronger laser light than that of a traditional apparatus by accumulating laser light in the optical resonator. The laser oscillation apparatus includes a laser light source which generates laser... Agent:

20130128907 - Coherent micro-mixer: A coherent micro-mixer provides a 6-port device having two input ports four output ports. A signal light wave is input into one input port and a reference light wave is input into another input port. The four outputs from the output ports combine to produce interference between the two input... Agent: Optoplex Corporation

20130128908 - Diode pumped solid state opto-mechanically optimized green laser: A unique physical design of 532 nm Diode Pumped Solid State (DPSS) laser elements to achieve independent crystal phasing (rotation), spacing and output coupler (OC) alignment in a robust small package is provided.... Agent: Laser Energetics Inc.

20130128909 - Edge-emitting semiconductor laser: An edge-emitting semiconductor laser is specified. A semiconductor body includes an active zone suitable for producing electromagnetic radiation. At least two facets on the active zone form a resonator. At least two contact points are spaced apart from one another in a lateral direction by at least one intermediate region... Agent: Osram Opto Semiconductors Gmbh

20130128910 - Laser lift-off apparatus: In order to separate a material layer from a substrate at the boundary face between the substrate and the material layer, a laser light is applied to a workpiece from the substrate side through a mask, the work having the material layer formed on the substrate. The laser beam is... Agent: Ushio Inc.

20130128911 - Diode laser and method for manufacturing a high-efficiency diode laser: A diode laser having aluminum-containing layers and a Bragg grating for stabilizing the emission wavelength achieves an improved output/efficiency. The growth process is divided into two steps for introducing the Bragg grating, wherein a continuous aluminum-free layer and an aluminum-free mask layer are continuously deposited after the first growth process... Agent: Forschungsverbund Berlin E.v.