|Coherent light generators patents - Monitor Patents|
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Coherent light generatorsBelow are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 08/28/2014 > 8 patent applications in 6 patent subcategories.
20140241385 - Low-mode high power fiber combiner: A high power fiber laser system is configured with a combiner end fiber spliced to a combiner output fiber. The system further includes a light stripper extending along the combiner end and output fibers and configured with sequentially located zones which are provided with respective refractive indices. In a forward... Agent:
20140241386 - Short-pulsed compact mopa: A master oscillator power amplifier (MOPA) system includes an oscillator having a neodymium-doped gadolinium vanadate gain-medium and delivering seed-pulses. A length of single mode fiber is used to broaden the spectrum of the seed pulse. An amplifier having a neodymium-doped yttrium vanadate gain-medium amplifies the spectrally broadened seed-pulses. The gain-spectrum... Agent: Coherent Gmbh
20140241387 - Multiple-current-source laser diode driver system: A laser diode driving system includes a first high-side-drive current source for driving a first set of diodes, the first set of diodes including one or more laser diodes. A second high-side-drive current source drives a second set of diodes, the second set of diodes including one or more laser... Agent: Raytheon Company
20140241388 - Nitride semiconductor light-emitting system: A nitride semiconductor light-emitting system includes a nitride semiconductor light-emitting device, a base mount holding the nitride semiconductor light-emitting device, having an opening, and containing first metal as a main component, a cap adhered to the base mount, and a lead pin penetrating the opening. The lead pin is fixed... Agent: Panasonic Corporation
20140241389 - Semiconductor light emitting device and method for manufacturing same: According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe... Agent: Kabushiki Kaisha Toshiba
20140241390 - Semiconductor light emitting device and method for manufacturing same: According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe... Agent: Kabushiki Kaisha Toshiba
20140241392 - Quantum cascade laser: A quantum cascade laser 1 includes a semiconductor substrate, an active layer 15 that is disposed on the semiconductor substrate and has a cascade structure in which a unit layered structure 16 including a quantum well light emitting layer and an injection layer is stacked in multiples to alternately stack... Agent: Hamamatsu Photonics K.k.
20140241391 - Semiconductor light-emitting element, method for producing the same, and display apparatus: A semiconductor light-emitting element includes a substrate, a recess in the substrate, and a ridge portion disposed in the recess, the ridge portion having a constant width, in which the recess has a width that varies in the longitudinal direction of the ridge portion, the ridge portion is formed of... Agent: Sony Corporation08/21/2014 > 8 patent applications in 8 patent subcategories.
20140233592 - Broadband high power light source: A tunable light includes a super continuum light source and a non-linear crystal, the super continuum light source comprising a pump source and a generator fiber, the generator fiber having an input end and an output end, and the super continuum light source and the non-linear crystal being arranged so... Agent: Nkt Photonics A/s
20140233593 - Multi-wavelength laser: The multi-wavelength laser is a ring laser source working at room temperature. The laser has an inner cavity disposed in an outer cavity. A pair of circulators disposed in the inner cavity is configured to assure counter-propagation of light between the inner cavity and the outer cavity. A gain-clamped semiconductor... Agent: King Fahd University Of Petroleum And Minerals
20140233594 - Dc-coupled laser drive circuit and method for driving laser diode device: A DC-coupled laser drive circuit (1) includes (i) a voltage drop section (14) provided between a power source and a pre-driver (12) and (ii) a voltage drop amount controlling section (16) for controlling, according to an output of the pre-driver (12), an amount of a voltage drop in the voltage... Agent: Fujikura Ltd.
20140233595 - Vertical cavity surface emitting laser with an integrated protection diode: A semiconductor device includes a vertical cavity surface emitting laser (VCSEL) with an integrated protection diode arranged between the VCSEL and an emitting surface. By locating the protection diode above the VCSEL, a minimal increase in substrate area is consumed to protect the VCSEL from electrostatic discharge events. A relatively... Agent: Avago Technologies GeneralIP(singapore) Pte. Ltd.
20140233596 - Semiconductor lasers and etched-facet integrated devices having non-uniform trenches: An edge-emitting etched-facet optical semiconductor structure includes a substrate, an active multiple quantum well (MQW) region formed on the substrate, a ridge waveguide formed over the MQW region extending in substantially a longitudinal direction between a waveguide first etched end facet disposed in a first window and a waveguide second... Agent: Avago Technologies GeneralIP(singapore) Pte. Ltd.
20140233597 - Laser device: The invention relates to a laser device comprising at least three linear laser gain volumes (12) for a gas to be excited, connecting elements (20) for connecting adjacent laser gain volumes, the laser gain volumes being mechanically coupled to other, and forming a common volumetric space, excitation means (50) for... Agent: Alltec Angewandte Laserlicht Technology Gmbh
20140233598 - Semiconductor laser excitation solid-state laser: A semiconductor laser excitation solid-state laser comprises: a planar waveguide-type solid-state laser element which is disposed on a solid-state laser substrate; an LD array; and a sub-mount substrate on which joining layers of two different thicknesses are formed on the same plane; wherein the planar waveguide-type solid-state laser element is... Agent: Mitsubishi Electric Corporation
20140233599 - Nanolaser generator using graphene electrode and method for manufacturing the same: The present disclosure relates to a nanolaser generator using a transparent graphene electrode, a method for manufacturing the same, and a single nanopillar LED using the same. The nanolaser generator includes a microdisk resonator, a protruding dielectric ring provided to surround a boundary surface of the microdisk resonator, an external... Agent: Korea University Research And Business Foundation08/14/2014 > 10 patent applications in 9 patent subcategories.
20140226684 - Waveguide-coupled vertical cavity laser: An integrated circuit includes an optical source that provides an optical signal to an optical waveguide. In particular, the optical source may be implemented by fusion-bonding a III-V semiconductor to a semiconductor layer in the integrated circuit. In conjunction with surrounding mirrors (at least one of which is other than... Agent: Oracle International Corporation
20140226685 - Method for oscillating an optical vortex laser and optical vortex laser oscillation device: Provided is an optical vortex laser oscillation device which is capable of an increased out and can generate an optical vortex even in a wide frequency range and if the optical vortex has a quantum number which is not an integer. A laser device according to one embodiment of the... Agent:
20140226686 - Chemical detection and laser wavelength stabilization employing spectroscopic absorption via laser compliance voltage sensing: Systems and methods are disclosed that provide a direct indication of the presence and concentration of an analyte within the external cavity of a laser device that employ the compliance voltage across the laser device. The systems can provide stabilization of the laser wavelength. The systems and methods can obviate... Agent: Battelle Memorial Institute
20140226687 - Laser device with a laser unit and a fluid container for a cooling means of said laser: The invention relates to a laser device (10) comprising at least one laser unit (20) for generating laser light, and cooling means (30) for cooling said laser unit, said cooling means including a channel arrangement (35) through which a cooling fluid is circulated for transferring heat away from the laser... Agent:
20140226688 - Multiple output diode driver with independent current control and output current modulation: The present technology provides a multiple output diode driver that includes a high side current source and at least two loads electrically coupled in series to the current source, each respective load including at least one laser diode. The multiple output diode driver can further include a shunt device electrically... Agent: Raytheon Company
20140226689 - Light emitting device: A light emitting device includes first and second electrodes, a semiconductor laser element, a bonding wire, a transparent frame section, and a lid section. The first electrode includes a convex section, a bottom surface surrounding the convex section, and a first surface. The second electrode includes a first surface opposed... Agent: Toshiba Lighting & Technology Corporation
20140226690 - Device package and methods for the fabrication and testing thereof: Provided are methods of forming sealed via structures. One method involves: (a) providing a semiconductor substrate having a first surface and a second surface opposite the first surface; (b) forming a layer on the first surface of the substrate; (c) etching a via hole through the substrate from the second... Agent: Nuvotronics, LLC
20140226691 - Iii-v photonic crystal microlaser bonded on silicon-on-insulator: Novel methods and systems for miniaturized lasers are described. A photonic crystal is bonded to a silicon-on-insulator wafer. The photonic crystal includes air-holes and can include a waveguide which couples the laser output to a silicon waveguide.... Agent: California Institute Of Technology
20140226692 - Organic semiconductor lasers by triplet managers: A first device is provided. The device includes an organic semiconductor laser. The organic semiconductor laser further includes an optical cavity and an organic layer disposed within the optical cavity. The organic layer includes: an organic host compound; an organic emitting compound capable of fluorescent emission; and an organic dopant... Agent: The Regents Of The Universtiy Of Michigan
20140226693 - Gas laser device and gas reservoir: The invention refers to a laser device comprising a tubular space formed by at least two resonator tubes (12) for a gas to be excited, excitation means (50) for each of the at least two resonator tubes for exciting the gas in the resonator tube for generating laser light, a... Agent:08/07/2014 > 12 patent applications in 8 patent subcategories.
20140219297 - Anisotropic beam pumping of a kerr lens modelocked laser: Apparatus and methods for anisotropic pumping of a Kerr lens modelocked laser. Direct diode laser pumping of an ultrafast Kerr lens modelocked laser oscillator is accomplished. Diode lasers generate severely anisotropic beams, meaning the pump beam has a higher-beam-quality dimension and a lower-beam-quality dimension. By spatially overlap of the pump... Agent:
20140219296 - Compact coherent high brightness light source for the mid-ir and far ir: Compact laser systems are disclosed which include ultrafast laser sources in combination with nonlinear crystals or waveguides. In some implementations fiber based mid-IR sources producing very short pulses and/or mid-IR sources based on a mode locked fiber lasers are utilized. A difference frequency generator receives outputs from the ultrafast sources,... Agent: Imra America, Inc.
20140219298 - Optical scanning and imaging systems based on dual pulsed laser systems: The invention relates to scanning pulsed laser systems for optical imaging. Coherent dual scanning laser systems (CDSL) are disclosed and some applications thereof. Various alternatives for implementation are illustrated, including highly integrated configurations. In at least one embodiment a coherent dual scanning laser system (CDSL) includes two passively modelocked fiber... Agent: Imra America, Inc.
20140219300 - Method and system for high power parametric amplification of ultra-broadband few-cycle laser pulses: A system and method for high power parametric amplification based on performing amplification in a frequency domain after time domain pulses are optically Fourier transformed, to overcome bandwidth limitations. In a nutshell, a first optical Fourier transformation of a seed spectrum is performed and parametric amplification is carried out in... Agent: Institu National De La Recherche Scientifique
20140219299 - Method for actively controlling the optical output of a seed laser: Seed pulse generators for fiber amplifier systems include a seed pump controller coupled to a seed pump laser diode. A photodetector is situated to detect seed pulse generation, and is coupled to the seed pump controller so that seed pumping is decreased upon pulse detection. For a laser diode pump... Agent: Nlight Photonics Corporation
20140219301 - Reflectivity-modulated grating mirror: The invention relates to vertical cavity lasers (VCL) incorporating a reflectivity-modulated grating mirror (1) for modulating the laser output. A cavity is formed by a bottom mirror (4), an active region (3), and an outcoupling top grating mirror (1) formed by a periodic refractive index grating region in a layer... Agent: Danmarks Tekniske Universitet
20140219302 - Thermal management in laser diode device: Embodiments are disclosed that relate to reducing inductive losses and controlling driver and laser diode temperatures in an optical assembly comprising a laser diode. For example, one disclosed embodiment provides an optical assembly comprising a printed circuit board, and a laser diode package and laser diode driver mounted to the... Agent: Microsoft Corporation
20140219303 - Semiconductor light emitting device: A semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first electrode disposed below the light emitting structure, the first electrode being electrically connected to the first conductivity type semiconductor layer, a... Agent: Samsung Electronics Co., Ltd.
20140219304 - Semiconductor light emitting device: A semiconductor light emitting device includes a conductive substrate, a light emitting laminate including a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer stacked on the conductive substrate, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second... Agent: Samsung Electronics Co., Ltd.
20140219305 - Semiconductor lasers and etched-facet integrated devices having h-shaped windows: An edge-emitting optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide extending between first and second etched end facets. The first etched end facet is disposed in a first window, while the second etched end facet is disposed... Agent: Avago Technologies GeneralIP(singapore) Pte. Ltd
20140219306 - Multicolor photonic crystal laser array: A multicolor photonic crystal laser array comprises pixels of monolithically grown gain sections each with a different emission centre wavelength. As an example, two-dimensional surface-emitting photonic crystal lasers comprising broad gain-bandwidth III-nitride multiple quantum well axial heterostructures were fabricated using a novel top-down nanowire fabrication method. Single-mode lasing was obtained... Agent: Sandia Corporation
20140219307 - Combined laser light source: A combined laser light source includes a substrate, a waveguide, a first laser source, a second laser source, and a Bragg grating. The substrate includes a top surface, a first side surface, and a second side surface. The waveguide is formed in the top surface and includes a first branch... Agent:Previous industry: Multiplex communications
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