Coherent light generators inventions

20080101422 - Semiconductor laser device including a light shield plate, semiconductor laser device package, and methods of manufacturing the same: Provided is a semiconductor laser device, a semiconductor laser device package including the semiconductor laser device and methods of manufacturing the same. A semiconductor laser device may include a light emission structure including a first clad layer, an active layer and a second clad layer sequentially deposited on a substrate,... Agent: Harness, Dickey & Pierce, P.L.C

20080101424 - Output power control for harmonic-generating laser: In harmonic-generating laser apparatus, plane-polarized fundamental radiation of a laser is converted to harmonic radiation by an optically nonlinear crystal. The power of harmonic radiation generated by the apparatus is selectively varied by selectively rotating the plane of polarization of fundamental radiation entering the optically nonlinear crystal.... Agent: Stallman & Pollock LLP

20080101425 - Electro-absorption semiconductor optical modulator: An electro-absorption semiconductor optical modulator comprises an n-type cladding layer of III-V compound semiconductor; a p-type cladding layer of III-V compound semiconductor; and an active region. The active region is provided between the n-type cladding layer and the p-type cladding layer, and has a quantum well structure. The quantum well... Agent: Smith, Gambrell & Russell

20080101426 - Laser beam source device and image display apparatus including the laser beam source device: A laser beam source device includes a light source that emits light of a first wavelength, a wavelength converting element that converts a wavelength of the light of the first wavelength entered into a second wavelength, a multi-layer film mirror having a characteristic of reflecting light of the first wavelength... Agent: Oliff & Berridge, PLC

20080101428 - Laser-power control method, and laser driving device and optical disc apparatus using the method: In a laser-power control method, a power of laser light emitted from a laser-light emitting element and a driving current for driving the laser-light emitting element are detected. An approximate expression indicating a driving-current to light-power characteristic of the laser-light emitting element is updated on the basis of the detected... Agent: Knobbe Martens Olson & Bear LLP

20080101429 - System and method for generating intense laser light from laser diode arrays: Laser modules using two-dimensional laser diode arrays are combined to provide an intense laser beam. The laser diodes in a two-dimensional array are formed into rows and columns, and an optical assembly images light generated by laser diodes in a column into an optical fiber. The laser light outputs of... Agent: Leydig Voit & Mayer, Ltd

20080101430 - Rf laser: An RF excited gas laser including an offset V-shaped laser cavity. The laser includes a first and second ceramic body portions with the laser cavity at least partially defined by the ceramic body portions. At least one internal gas reservoir is also at least partially defined by the first and... Agent: Grossman, Tucker, Perreault & Pfleger, PLLC

20080101423 - Saturable absorbers for q-switching of middle infrared laser cavaties: This disclosure demonstrates successfully using single, polycrystalline, hot pressed ceramic, and thin film Fe doped binary chalcogenides (such as ZnSe and ZnS) as saturable absorbing passive Q-switches. The method of producing polycrystalline ZnSe(S) yields fairly uniform distribution of dopant, large coefficients of absorption (5-50 cm−1) and low passive losses while... Agent: Smith, Gambrell & Russell

20080101427 - Stable/unstable optical cavity resonator for laser: An improved resonator and optical cavity is adapted for use with a chemical laser that has a nozzle upstream of the resonator that emits a gain medium in a flow direction, and a pressure-recovery system downstream of the resonator. The optical resonator comprises first and second optical elements that are... Agent: Storm LLP

20080101431 - Laser irradiation apparatus: The laser radiation apparatus is provided having substantial light emission intensity although the laser radiation apparatus is miniaturized. A solid state laser rod; the excitation light source formed such that the excitation light source surrounds an emission axis in a section perpendicular with respect to the emission axis of laser... Agent: Greenblum & Bernstein, P.L.C

20080095199 - Method and apparatus for providing light having a selected polarization with an optical fiber: Optical apparatus (110, 500, 600, 800, 1000) for providing light having a selected linear polarization having a polarization ratio, the apparatus (110, 500, 600, 800, 1000) comprising a length of optical fiber (120, 504, 604, 804, 1001) comprising a rare earth for providing light having a first wavelength responsive to... Agent: Nufern Peter J. Rainville

20080095203 - Multi-emitter image formation with reduced speckle: A technique for reducing speckle in a projected image includes forming an image using a plurality of laser light emitters. An input to the plurality of laser light emitters is non-mechanically perturbed to a degree sufficient to disrupt wavefront uniformity across the array of laser light emitters.... Agent: Hewlett Packard Company

20080095210 - Optical pumping method for gain-media with polarization sensitive absorption: A method for optically pumping a gain-medium with partially polarized or unpolarized pump-light having a wavelength at which that gain-medium has an absorption that is dependent on the polarization plane of the pump-light is disclosed. The pump-light is directed into the gain-medium. The strongest-absorbed polarization component of the pump-light is... Agent: Stallman & Pollock LLP

20080095200 - Device for generating a laser light beam: A device for generating a laser light beam includes a module. The module includes at least one laser light source, and a mechanical, an electrical and/or an optical interface defined towards an outside of the module.... Agent: Darby & Darby P.C.

20080095201 - High power q-switched laser for soft tissue ablation: The present invention discloses a high power Q-switched, intracavity frequency-doubled laser for laser ablation of soft tissue. Operating a high power Q-switched laser in a frequent on-off mode is highly desirable for laser prostatectomy. Giant first pulse may occur when a Q-switched laser is switched from laser-ready mode to pulse-on... Agent: Pillsbury Winthrop Shaw Pittman, LLP

20080095202 - Mode control waveguide laser device: Provided is a device capable of oscillating a plurality of oscillation modes within a laser medium for obtaining a fundamental wave output which is easy in output scaling and high in luminance, thereby enabling a second harmonic conversion which is high in efficiency. The device includes: a laser medium (5)... Agent: Birch Stewart Kolasch & Birch

20080095204 - Laser device: A laser apparatus (100) has a semiconductor laser device (12a to 12c), coolant jetting means (24), and a heatsink (18a to 18c). The semiconductor laser device has a light output surface (50) for emitting laser light. The coolant jetting means has a coolant chamber (53) for accommodating a coolant, an... Agent: Drinker Biddle & Reath (dc)

20080095206 - Light-emitting device on n-type inp substrate heavily doped with sulfur: The present invention provides a structure of a light-emitting device which prevents the inter diffusion of impurities from the high-doped n-type InP substrate to a p-type current blocking layer. The substrate of the invention is highly doped with sulfur (S) to obtain high quality surface whose etch pit density (EPD)... Agent: Smith, Gambrell & Russell

20080095205 - Semiconductor laser and electronic device: In one embodiment of the invention, in a semiconductor laser in which a first conductivity type lower cladding layer, an active layer that includes a quantum well layer, and a second conductivity type upper cladding layer are formed in this order on a semiconductor substrate, a dopant concentration of the... Agent: Nixon & Vanderhye, PC

20080095207 - Process for precisely forming diffraction grating light-emitting device and a laser diode providing the same: The present invention provides a process to form the diffraction grating involved in the DFB-LD precisely, and a DFB-LD device with precisely formed diffraction grating. The DFB-LD of the invention provides a monitoring layer and another semiconductor layer on the monitoring layer as the diffraction grating. The other layer contains... Agent: Smith, Gambrell & Russell

20080095208 - Magnon laser: A magnon laser comprising: a magnon gain medium (MGM) that supports generation of nonequilibrium magnons, and a means for generating nonequilibrium magnons in the MGM further comprising a means for pumping nonequilibrium electrons into the MGM. Propagation of nonequilibrium electrons in the MGM causes generation of nonequilibrium magnons. The MGM... Agent: Law Offices Of Boris G. Tankhilevich

20080095209 - Laser device for exposure device: A high efficiency injection device 4, which injects oscillation stage laser light into an optical stable resonator of an amplification stage laser 20, is provided. A discharge electrode 1a is disposed in an oscillation stage laser 10, and is connected to a 12 kHz power supply 15 for discharging the... Agent: Gerald T. Shekleton Welsh & Katz, Ltd.

20080089369 - Injection seeding employing continuous wavelength sweeping for master-slave resonance: A method for effective injection seeding is based on continuous wavelength sweeping for matching the injected seeds with one or more longitudinal mode(s) of the slave oscillator in every pulse. This is achieved through rapidly varying laser drive current, as a result of RF modulation. Depending on the modulation parameters,... Agent: Pavilion Integration Corporation

20080089370 - Wavelength control in wavelength selective, phase, and gain regions of semiconductor lasers: Particular embodiments of the present invention relate generally to semiconductor lasers and laser scanning systems and, more particularly, to schemes for controlling semiconductor lasers. According to one embodiment of the present invention, a laser is configured for optical emission of encoded data. At least one parameter of the optical emission... Agent: Corning Incorporated

20080089371 - Bright light source with two-dimensional array of diode-laser emitters: A bright light-source includes four diode-laser bars stacked on another in the fast-axis direction. Each of the diode-laser bars has a substrate side and an expitaxial side. In one example of the light-source, the diode-laser bars are soldered together with the epitaxial side of one soldered to the substrate side... Agent: Stallman & Pollock LLP

20080089373 - Wavelength control in semiconductor lasers: The present invention relates generally to semiconductor lasers and laser scanning systems and, more particularly, to schemes for controlling wavelength in semiconductor lasers. According to one embodiment of the present invention, a method of minimizing laser wavelength variations in a semiconductor laser is provided. According to the method, one or... Agent: Corning Incorporated

20080089366 - High energy short pulse fiber laser achieved by combining pulse shaping, polarization shaping and spectral shaping: A fiber laser system includes a fiber mode-locking oscillator, a fiber stretcher, a multistage amplifier chain, a pulse picker, and a compressor wherein at least a device for performing a pulse shaping, a spectral shaping and a polarization shaping and a combination thereof is implemented in the fiber mode-locking oscillator,... Agent: Bo-in Lin

20080089367 - Fiber-coupled solid state microcavity light emitters: Designs of fiber-coupled solid state microcavity light emitters based on microdisk cavities, photonic crystal cavities and other microcavity configurations to provide efficient optical coupling.... Agent: Fish & Richardson, PC

20080089368 - Semiconductor laser devices and methods: A method for producing controllable light pulses includes the following steps: providing a heterojunction bipolar transistor structure including collector, base, and emitter regions of semiconductor materials; providing an optical resonant cavity enclosing at least a portion of the transistor structure; and coupling electrical signals with respect to the collector, base,... Agent: Martin Novack

20080089372 - Solid laser module, optical amplifier, and laser oscillator: A solid laser module etc. having a structure that enables to obtain a high-quality light output. The solid laser module has a vacuum container with a window, and a heat sink, a solid laser medium, and a pair of transparent members are received in an integrally assembled state in the... Agent: Drinker Biddle & Reath (dc)

20080089374 - Semiconductor laser: A semiconductor laser comprising a semiconductor layer sequence (2) comprising an active zone (3) for generating electromagnetic radiation, and an absorber zone for attenuating higher modes. The absorber zone is arranged within the semiconductor layer sequence (2) or adjoins the semiconductor layer sequence (2).... Agent: Cohen Pontani Lieberman & Pavane LLP

20080089375 - Semiconductor laser diode: A semiconductor laser diode comprises a p-n junction. The p-n junction comprises a substrate, an n-type semiconductor layer, a p-type semiconductor layer, and a quantum well. The quantum well is disposed between the n-type semiconductor layer and the p-type semiconductor layer. The substrate is formed from a first material system,... Agent: William Botjer

20080089376 - Current confining structure and semiconductor laser: To provide such a technique as to solve problems about a high operating voltage, temperature rise due to heat generation, in-plane non-uniform injection, and a small modulation bandwidth upon high-speed modulation in a surface-emitting laser. A current confining structure according to the present invention includes an n-type semiconductor layer 102,... Agent: Paul J. Esatto Jr. Scully, Scott, Murphy & Presser, P.C.

20080089377 - Method for forming a coating film on a facet of a semiconductor laser diode: The present invention is to provide a method for producing a semiconductor laser diode (LD) with an enhanced ESD resistance. The method includes a step for forming an aluminum film on a facet of the LD and a step for forming an aluminum oxide film on the aluminum film. The... Agent: Smith, Gambrell & Russell

20080089378 - Method of manufacturing semiconductor laser for communication, semiconductor laser for communication and optical transmission module: Some semiconductor lasers have an initial failure mode that is advanced as the amount of optical power therein, namely, the amount of optical output observed from the outside increases in almost independent of the temperature. The initial failure mode that is advanced as the amount of optical output increases is... Agent: Mcdermott Will & Emery LLP

20080089380 - Laser arrangement and semiconductor laser for optically pumping a laser: A laser arrangement comprises an optically pumped laser (2) and at least one semiconductor laser (1) which emits pump radiation (6) for pumping the optically pumped laser (2). The semiconductor laser (1) contains a plurality of monolithically integrated active zones (3, 4, 5) arranged one above another, at least two... Agent: Thomas Langer

20080089379 - Semiconductor laser device and method for its production: A semiconductor laser device has an optically pumped, surface-emitting vertical emitter with a radiation-generating vertical emitter zone comprising a layer containing an organic material and a monolithically integrated pump radiation source for the optical pumping of the vertical emitter. The pump radiation source is designed to emit pump radiation in... Agent: Fish & Richardson P.C.

20080089381 - Systems and methods for utilizing pulsed radio frequencies in a ring laser gyroscope: Ring laser gyroscope that includes a gyroscope block, a radio frequency transmitting device, and a radio frequency energy source. The gyroscope block has at least one discharge bore containing a gain medium, and the radio frequency transmitting device is located within the gyroscope block in proximity to at least one... Agent: Honeywell International Inc. Patent Services Ab-2b

20080089382 - Planar beam dump: In one embodiment, a device for capturing radiation includes: a panel defining a plurality of double wedge chambers, wherein each double wedge chamber includes a first wedge-shaped chamber that tapers into an opening for a second wedge-shaped chamber, and wherein a longitudinal axis of the first wedge-shaped chamber is not... Agent: Macpherson Kwok Chen & Heid, LLP

20080084903 - Semiconductor laser device having incomplete bonding region and electronic equipment: There is provided a semiconductor laser device capable of reducing stress occurring to a semiconductor laser element so that a life of the semiconductor laser device can be prolonged. In this semiconductor laser device, a solder layer 114 is absent over a first region R1 ranging to a specified length... Agent: Nixon & Vanderhye, Pc

20080084906 - Semiconductor optical element and method of manufacturing the same: A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in a portion of the... Agent: Leydig Voit & Mayer, Ltd

20080084901 - Semiconductor thin film crystallization device and semiconductor thin film crystallization method: A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second... Agent: Edwards Angell Palmer & Dodge LLP

20080084902 - Laser operation for survey instruments: The performance of a laser scanner is optimized in the field by automatically determining appropriate laser parameters for the scan location. A laser control system uses information such as the environmental temperature to select an appropriate range of start points for various laser parameters, such as pump temperature and laser... Agent: Stallman & Pollock, LLP

20080084904 - Driving circuit using probability density function: The present invention provides a laser diode driving circuit that enables to precisely control the amplitude of the driving current with suppressing the overshoot and the undershoot appeared in the monitor signal of the optical output from the laser diode. The driving circuit of the invention includes a signal mixer,... Agent: Venable LLP

20080084905 - High power diode laser having multiple emitters and method for its production: The invention discloses a high power laser diode comprising a plurality of laser light emitters (2) and a plurality of light collimating means (33), wherein each of the laser light emitters (2) defines, in a direction perpendicular to a direction of propagation (32) of an output laser beam, a fast... Agent: Renner Otto Boisselle & Sklar, LLP