|Coherent light generators patents - Monitor Patents|
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Coherent light generators January recently filed with US Patent Office 01/13Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 01/31/2013 > 12 patent applications in 9 patent subcategories. recently filed with US Patent Office
20130028273 - Beam generator: A beam generator for an aerial image generating apparatus includes a laser source for emitting a laser beam and a short wavelength beam source for generating a short wavelength beam by processing the laser beam such that the short wavelength beam is coherent with and has a wavelength shorter than... Agent:
20130028276 - High-power cw fiber-laser: A CW ytterbium-doped fiber-laser includes a gain-fiber having a reflector proximity-coupled to one end, with the other end left uncoated. A laser resonator is defined by the reflector and the uncoated end of the gain-fiber. Pump-radiation from fast-axis diode-laser bar-stacks emitting at 915 nm and 976 nm is combined and... Agent: Coherent, Inc.
20130028274 - Method for assembling high power fiber laser system and module realizing the method: A method for arranging a high power fiber laser system includes spiraling an active fiber in a housing with a diameter of spiral gradually decreasing towards the center of th housing. The method further includes coupling the opposite free ends of the spiraled active fiber to respective passive fibers providing... Agent: Ipg Photonics Corporation
20130028275 - Method for manufacturing optical fiber grating, optical fiber grating, and fiber laser: A method for manufacturing an optical fiber grating that includes first and second gratings that configure an optical resonator, the method including: forming the first grating by radiating ultraviolet light to an optical fiber so that a irradiation intensity Z satisfies the following Equation 1: Z≦(ΔλS/x+0.04556 Y2+1.2225 Y)/(0.05625 Y2+1.6125 Y)... Agent: Fujikura Ltd.
20130028277 - Frequency conversion of laser radiation: A system includes: a first nonlinear crystal arranged to receive to a first laser beam having a first wavelength λ1 and operable to generate, by frequency doubling of the first laser beam, a second laser beam having a second wavelength λ2, in which the second beam propagates collinearly with the... Agent: Trumpf Laser Marking Systems Ag
20130028278 - Optical transmitter for stabilizing output wavelength: An optical transmitter implemented with an LD whose temperature is stably controlled is disclosed. A temperature of the LD is continuously monitored; and a difference from the target temperature and a time derivative thereof are calculated. When the time derivative becomes substantially zero, that is, the difference becomes an extremum,... Agent: Sumitomo Electric Industries, Ltd.
20130028279 - Vertical cavity surface emitting laser cavity with low thermal impedance: The present invention concerns new designs of VCLs with high contrast gratings (HCG) combined with diamond layer as a bottom mirror. They can be realized either with a classical V-shaped pumping scenario, or through the introduction of the pumping beam from the bottom direction, through the HCG that can be... Agent: Ecole Polytechnique Federale De Lausanne (epfl)
20130028280 - Semiconductor laser element and manufacturing method of the same: Disclosed herein is a semiconductor laser element including: on a substrate, a laser structure section configured to include a semiconductor laminated structure having an n-type semiconductor layer, active layer and p-type semiconductor layer in this order, and a p-side electrode on top of the p-type semiconductor layer; a pair of... Agent: Sony Corporation
20130028281 - Optoelectronic semiconductor chip: s
20130028283 - High speed vertical-cavity surface-emitting laser: There is described a high speed vertical-cavity surface-emitting laser (VCSEL) comprising a substrate and first and second distributed Bragg reflectors (DBRs) disposed on the substrate, each comprising a stack of layers of alternating refractive index. A resonant cavity is disposed between the DBRs and an active region disposed in the... Agent:
20130028282 - Semiconductor device having a vertical cavity surface emitting laser (vcsel) and a protection diode integrated therein and having reduced capacitance to allow the vcsel to achieve high operating speeds: A semiconductor device is provided that has a VCSEL and a protection diode integrated therein and that has an additional intrinsic layer. The inclusion of the additional intrinsic layer increases the width of the depletion region of the protection diode, which reduces the amount of capacitance that is introduced by... Agent: Avago Technologies FiberIP(singapore) Pte. Ltd.
20130028284 - Laser device: A laser device includes a substrate, a lower cladding layer on the substrate, an active layer on the lower cladding layer, an upper cladding layer on the active layer, and a second order diffraction grating in a layer above the active layer and having dimensions of at least 100 μm... Agent: Mitsubishi Electric Corporation01/24/2013 > 15 patent applications in 10 patent subcategories. recently filed with US Patent Office
20130022060 - Device for transmitting light energy and associated transmission method: A device is provided that includes an optical fiber and an assembly illuminating the optical fiber capable of illuminating the optical fiber at an upstream end. The optical fiber includes a hollow core and an anti-resonant annular cladding arranged around the hollow core. The illuminating assembly generates a focused beam... Agent: Meggitt (france)
20130022061 - Fiber laser device: A laser diode driving device (1) of the present invention includes: a variable DC power supply (3) for outputting a voltage for driving laser diodes (LD1 to LDn); a current driving element (4) for causing a current If to flow; a current control section (5) for controlling (i) turning on... Agent: Fujikura Ltd.
20130022062 - Tunable laser: A tunable laser, including: a laser resonant cavity; a laser gain medium; an intra-cavity collimating lens; an acousto-optic tunable filter; a device exciting sound waves in an acousto-optic crystal; a radio frequency signal source providing radio frequency energy for the energy transducer and adjusting the oscillation wavelength of the laser... Agent: Tianjin Gp Photonics. Inc.
20130022063 - Vertical-cavity surface-emitting laser array, vertical-cavity surface-emitting laser device, optical transmission apparatus, and information processing apparatus: A vertical-cavity surface-emitting laser array includes a substrate having an element forming area, multiple columnar structures formed in the element forming area on the substrate, and at least one metal wire formed adjacent to the multiple columnar structures. Each columnar structure includes a lower semiconductor reflector of a first conductivity... Agent: Fuji Xerox Co., Ltd.
20130022064 - Laser package having multiple emitters configured on a substrate member: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.... Agent: Soraa, Inc.
20130022065 - Gas laser having radial and axial gas bearings: A fan for circulating laser gas in a gas laser, the fan having a shaft which is supported by at least one radial bearing and at least one axial gas bearing. The axial gas bearing has at least two rotating bearing faces, one or both being structured with a groove... Agent: Trumpf Maschinen Ag
20130022067 - Laser device: The laser device includes a semiconductor laser element having an emission surface from which laser light is emitted, an optical fiber having an end part facing the emission surface, and an optical fiber supporting member which (i) supports the optical fiber and (ii) has a bonding pad to which the... Agent: Fujikura Ltd.
20130022066 - Laser device and method for manufacturing same: A laser device includes: a semiconductor laser element having an output surface; an optical fiber having a leading end portion facing the output surface of the semiconductor laser element; and an optical fiber supporting member for supporting the optical fiber, the optical fiber supporting member being made from a non... Agent: Fujikura Ltd.
20130022069 - High power surface mount technology package for side emitting laser diode: The present invention relates to the packaging of high power laser(s) in a surface mount technology (SMT) configuration at low-cost using wafer-scale processing. A reflective sidewall is used to redirect the output emission from edge-emitting lasers through an optical element (e.g., a diffuser, lens, etc.). A common electrical pad centered... Agent:
20130022068 - Laser system provided with a frequency servo: The invention relates to a laser system provided with a laser radiation device (1) in which the radiation frequency is controlled by a heterodyne servo circuit particularly using an interferometric circuit (15). Said interferometric circuit comprises a coil of optical fibres (17) which provide a reference for correcting the laser... Agent: Universite Pierre Et Marie Curie, Paris 6
20130022071 - Nitride semiconductor laser device and wafer: A nitride semiconductor laser device is provided herein that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper... Agent:
20130022070 - Semiconductor laser device and manufacturing method thereof: The semiconductor laser device has a laser structure portion 107 having opposite resonator faces 108 and 109, and protecting films 110 and 120 formed on at least one of the opposite resonator end faces, wherein the protecting films 110 and 120 are formed of nitride dielectric films having a multistage... Agent: Sony Corporation
20130022072 - Iii-v photonic integration on silicon: Photonic integrated circuits on silicon are disclosed. By bonding a wafer of III-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. The coupling between the silicon waveguide and the... Agent: The Regents Of The University Of California
20130022073 - Single-frequency distributed feedback laser diode with complex-coupling coefficient and transparent conductive cladding layer: The illustrated embodiments provide a system and a method of manufacture for a complex-coupled distributed feedback laser diode. The improved laser diode has a complex-coupled metal grating to enforce the laser to emit in a longitudinal single-frequency and suppress dynamical instabilities. In addition, the improved device uses a transparent conductive... Agent:
20130022074 - Laser emission systems, heterostructure and active zone having coupled quantum-wells, and use for 1.55 mm laser emission: An active zone for a light emission system including a series of layers at least a portion of which consists of antimony semiconductors III-V. The layers are arranged to form at least one quantum well surrounded by barriers for generating a light emission. The active zone also includes at least... Agent:01/17/2013 > 14 patent applications in 9 patent subcategories. recently filed with US Patent Office
20130016740 - Fiber cladding light stripper: A high power cladding light stripper and high power laser systems using the same are described. A cladding light stripper includes a housing, a section of fiber disposed in relation to the housing wherein a portion of the section of fiber has an exposed cladding region, a plurality of glue... Agent:
20130016743 - Holey fiber, and laser device using the same: The invention aims to provide a holey fiber that can release leak light propagating through the clad at a desired location, and a laser device using the holey fiber. A holey fiber includes: one end and the other end; a core; an inner clad coating the core; a hole layer... Agent: Fujikura Ltd.
20130016741 - Optical fiber amplifier and fiber laser apparatus using the same: An optical fiber amplifier (2) includes: a first pumping source (10); a second pumping source (20); an amplification optical fiber (3) in which an active element is doped; a first optical filter (15) coupled to the first pumping source (10) and one end of the amplification optical fiber (30), the... Agent: Fujikura Ltd.
20130016742 - Optical fiber-type optical element, laser diode module, and fiber laser: There are provided: a core section provided so as to extend in a light-guiding direction in which incident light propagates; a photosensitive layer provided so as to extend in the light-guiding direction and peripherally enclose the core section, the photosensitive layer including a grating formed therein by irradiation of ultraviolet... Agent: Fujikura Ltd.
20130016744 - Laser source with tunable-grating-waveguide reflections: A laser source includes an optical cavity having a length exceeding a first predefined distance (such as 6 mm), where a wavelength spacing between optical modes associated with the optical cavity is less than a second predefined distance (such as 100 pm). Moreover, a gain medium in the laser source... Agent: Oracle International Corporation
20130016745 - Driver for laser diode integrated with external modulator: A driver for EA-DFB device is disclosed. The EA-DFB device is put between the positive power supply and the negative power supply as connected in series to the bias current source and the switching device. The EA device is modulated by the switching device in the differential mode. The switching... Agent: Sumitomo Electric Industries, Ltd.
20130016746 - Vertical surface emitting semiconductor device: A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected... Agent: Palo Alto Research Center Incorporated
20130016747 - Command apparatus in a gas laser oscillator, capable of command at high speed and with high precision: A command apparatus (10) for a plurality of laser power supplies (11, 12) comprises: a command generating section (5) generating commands for the laser power supplies; and a separating section (36) separating the generated commands into a bias command, an output command, an offset command and a gain command, wherein... Agent: Fanuc Corporation
20130016748 - Transimpedance amplifier, semiconductor device, and optical module: An optical module including a transimpedance amplifier capable of realizing a high-speed and high-quality receiving operation is provided. A transimpedance amplifier includes: a pre-amplifier using a single-end current signal as an input and converting the single-end current signal to a single-end voltage signal; an automatic decision threshold control detecting a... Agent: Hitachi, Ltd.
20130016749 - Surface emitting laser diode: A surface emitting laser diode includes: a semiconductor substrate; a first semiconductor layer of a first conductivity type on the semiconductor substrate; an active layer on the first semiconductor layer; a second semiconductor layer of a second conductivity type on the active layer; and a second order diffraction grating in... Agent: Mitsubishi Electric Corporation
20130016750 - Surface morphology of non-polar gallium nitride containing substrates: Optical devices such as LEDs and lasers are discloses. The devices include a non-polar gallium nitride substrate member having an off-axis non-polar oriented crystalline surface plane. The off-axis non-polar oriented crystalline surface plane can be up to about −0.6 degrees in a c-plane direction and up to about −20 degrees... Agent: Soraa, Inc.
20130016751 - Semiconductor laser device: A semiconductor laser device generates blue-violet light with an emission wavelength of 400 to 410 nm. The device includes an n-type group III nitride semiconductor layer, an active layer laminated on the n-type semiconductor layer and having an InGaN quantum well layer, a p-type group III nitride semiconductor layer laminated... Agent: Rohm Co., Ltd.
20130016752 - Laser diode assembly and method for producing a laser diode assembly: A laser diode arrangement having at least one semiconductor substrate, having at least two laser stacks each having an active zone and having at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser... Agent:
20130016753 - Semiconductor laser: An 830 nm broad area semiconductor laser having a distributed Bragg reflector (DBR) structure. The semiconductor laser supports multiple horizontal transverse modes of oscillation extending within a plane perpendicular to a crystal growth direction of the laser, in a direction perpendicular to the length of the resonator of the laser.... Agent: Mitsubishi Electric Corporation01/10/2013 > 8 patent applications in 5 patent subcategories. recently filed with US Patent Office
20130010819 - All-optical generation of 60 ghz millimeter wave using multiple wavelength brillouin-erbium fiber laser: A system (100) for generating a millimeter wave signals from heterodyning wavelengths from a multi-wavelength signal generated by a Brillouin-Erbium fiber laser (101). The Brillouin-Erbium fiber laser (101) includes a source laser (105) that transmits a seed signal. An optical directional coupler (110) has a first input that receives the... Agent:
20130010817 - Fiber fuse terminator: A fiber fuse terminator which is used to terminate a fiber fuse, comprising: an optical fiber which includes a core and a cladding having holes extending in a longitudinal direction thereof, in which: a refractive index of the core of the optical fiber is higher than a refractive index of... Agent: Fujikura Ltd.
20130010818 - Scanning temporal ultrafast delay and methods and apparatuses therefor: Methods and apparatuses for performing temporal scanning using ultra-short pulse width lasers in which only minimal (micro-scale) mechanical movement is required, and related methods for obtaining high-accuracy timing calibration, on the order of femtoseconds, are disclosed. A dual laser system is disclosed in which the cavity of one or more... Agent: Imra America, Inc.
20130010820 - Laser systems and methods: An architecture comprising laser sub-modules may be used to reach the optical output powers desired for projection display for 2D and 3D viewing. Monitoring and control of the laser sub-modules within the architecture may be performed to achieve desired performance metrics.... Agent: Reald Inc.
20130010821 - Laser system: A laser system 100 includes: a laser module 10 including: a DFB laser 12 that oscillates a laser beam 24; a heater 14 that adjusts a temperature of the DFB laser 12; and a harmonic generation element 18 that converts the laser beam 24 into a harmonic beam 34 of... Agent: Qd Laser, Inc.
20130010822 - Vertical light emitting device and manufacturing method: Provided is a vertical light emitting device comprising an upper multilayer reflective film and a lower multilayer reflective film that are formed facing each other and oscillate light; an intermediate layer that is formed below the upper multilayer reflective film and includes a layer having a different composition than the... Agent: Furukawa Electric Co., Ltd.
20130010823 - Quantum cascade laser with optimized voltage defect: A quantum cascade laser having a lower laser level backfilling given by an equation that accounts for the degeneracy of energy states due to the presence of multiple subbands. For mid-infrared quantum cascade lasers at room temperature and a typical number of injector subbands, the voltage defect is between 90... Agent:
20130010824 - Semiconductor optical integrated device and method for fabricating the same: A semiconductor optical integrated device includes a first semiconductor optical device formed over a (001) plane of a substrate and a second semiconductor optical device which is formed over the (001) plane of the substrate in a (110) orientation from the first semiconductor optical device and which is optically connected... Agent: Fujitsu Limited01/03/2013 > 15 patent applications in 12 patent subcategories. recently filed with US Patent Office
20130003761 - Mode-locked optically pumped semiconductor laser: A laser includes an optically pumped semiconductor OPS gain-structure. The apparatus has a laser-resonator which includes a mode-locking device for causing the laser to deliver mode-locked pulses. The resonator has a total length selected such that the mode-locked pulses are delivered at a pulse repetition frequency of about 100 MHz.... Agent: Coherent, Inc.
20130003762 - Wavelength tunable laser diode: A wavelength tunable laser diode (LD) is disclosed. The LD provides a SG-DFB region and a CSG-DBR region. The SG-DFB region shows a gain spectrum with a plurality of gain peaks, while, the CSG-DBR region shows a reflection spectrum with a plurality of reflection peaks. The LD may emit light... Agent: Sumitomo Electric Industries, Ltd.
20130003763 - Apparatus for adjusting polarization characteristics, and ultra-short ultra-high intensity pulse laser generator comprising same: The present invention relates to an apparatus for generating an ultra-short ultra-high intensity pulse laser, comprising: a pulse laser providing unit which generates an ultra-short ultra-high intensity pulse laser, stretches pulse width, then selects and provides only a pulse laser having a predetermined polarizing angle; a polarization characteristic adjusting unit... Agent: Electronics And Telecommunications Research Institute
20130003764 - Laser diode arrangement: A laser diode arrangement having a multiplicity of laser diodes (11) arranged along side one another, comprises a heat sink (9) on which the laser diodes (11) are mounted and a cooling body (1) which is in intimate contact with the heat sink (9), wherein the cooling body (1) has... Agent: Iie Gmbh & Co. Kg
20130003765 - Thermo-electric cooling system and method for cooling electronic devices: A thermo-electric cooling (TEC) system is presented for cooling of a device, such a laser for example. The TECT system comprises first and second heat pumping assemblies, and a control unit associated at least with said second heat pumping assembly. Each heat pumping assembly has a heat source from which... Agent: Novatrans Group Sa
20130003766 - Compact optical atomic clocks and applications based on parametric nonlinear optical mixing in whispering gallery mode optical resonators: Techniques and devices based on optical resonators made of nonlinear optical materials and nonlinear wave mixing to generate optical combs that are stabilized relative to an atomic reference.... Agent: Oewaves, Inc.
20130003767 - Semiconductor laser device and circuit for and method of driving same: A directly driven laser includes multiple contacts, with at least one of the contacts for injecting current into the laser such that the laser reaches at least a lasing threshold and at least one of the contacts for providing a data signal to the laser. In some embodiments a differential... Agent: Kaiam Corp.
20130003768 - Photonic crystal laser: A photonic crystal laser capable of producing a radially-polarized halo-shaped laser beam having a smaller width than conventional beams includes: an active layer; a ring-shaped photonic crystal including a plate-shaped base body on one side of the active layer, the base body having a number of modified refractive index areas... Agent: Kyoto University
20130003769 - Gallium nitride-based semiconductor laser device, and method for fabricating gallium nitride-based semiconductor laser device: A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light... Agent: Sumitomo Electric Industries, Ltd.
20130003770 - Interband cascade lasers: A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the... Agent: The Government Of The United States Of America, As Represented By The Secretary Of The Navy
20130003771 - Distributed feedback laser diode having asymmetric coupling coefficient and manufacturing method thereof: Provided are a distributed feedback laser diode and a manufacturing method thereof. The distributed feedback laser diode includes a first area having a first grating layer disposed in a longitudinal direction, a second area disposed adjacent to the first area and having a second grating layer disposed in the longitudinal... Agent: Electronics And Telecommunications Research Institute
20130003772 - Molecular gas laser: The closed cycle solid state optically pumped gas hybrid (chemical recovery) system utilizes a laser diode excited solid state, fiber or bulk, laser as a pump for a molecular gas, or gas mix, medium. The existence of efficient high power laser diode excited solid state fiber or bulk lasers, output... Agent:
20130003773 - System and method for automatic gas optimization in a two-chamber gas discharge laser system: A system and method for automatically performing gas optimization after a refill in the chambers of a two chamber gas discharge laser such as an excimer laser is disclosed. The laser is continuously fired at a low power output, and the gas in the amplifier laser chamber bled if necessary... Agent: Cymer, Inc.
20130003774 - Co2 laser: Efficient laser diode excited Thulium (Tm) doped solid state systems, directly matched to a combination band pump transition of Carbon Dioxide (CO2), have matured to the point that utilization of such in combination with CO2 admits effectively a laser diode pumped CO2 laser. The laser diode excited Tm solid state... Agent:
20130003775 - Co2 laser: Efficient laser diode excited Thulium (Tm) doped solid state systems, directly matched to a combination band pump transition of Carbon Dioxide (CO2), have matured to the point that utilization of such in combination with CO2 admits effectively a laser diode pumped CO2 laser. The laser diode excited Tm solid state... Agent:Previous industry: Multiplex communications
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