|Coherent light generators patents - Monitor Patents|
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Coherent light generators October categorized by USPTO classification 10/12Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 10/25/2012 > 16 patent applications in 12 patent subcategories. categorized by USPTO classification
20120269212 - Inexpensive variable rep-rate source for high-energy, ultrafast lasers: System for converting relatively long pulses from rep-rate variable ultrafast optical sources to shorter, high-energy pulses suitable for sources in high-energy ultrafast lasers. Fibers with positive group velocity dispersion (GVD) and self phase modulation are advantageously employed with the optical sources. These systems take advantage of the need for higher... Agent: Imra America, Inc.
20120269211 - Pulsed laser sources: Modelocked fiber laser resonators may be coupled with optical amplifiers. An isolator optionally may separate the resonator from the amplifier. A reflective optical element on one end of the resonator having a relatively low reflectivity may be employed to couple light from the resonator to the amplifier. Enhanced pulse-width control... Agent: Imra America, Inc.
20120269209 - Single mode high power fiber laser system: A high power single mode fiber laser system has a monolithic active fiber configured with a double bottleneck-shaped multimode (MM) core which is capable of supporting substantially only a fundamental mode at a given wavelength. The core has opposite uniformly configured end regions, frustoconical transformer regions running inwards from the... Agent: Ipg Photonics Corporation
20120269210 - Thulium and/or holmium doped germanosilicate glasses for two micron lasers: A laser glass fiber with a core of the fiber comprising a germanosilicate glass host, one or more glass network modifiers, one or more glass network intermediators, and Thulium ions, Holmium ions, or a combination of Thulium ions and Holmium ions. The fiber emits laser light from 1.7 micron to... Agent:
20120269213 - Optical device and method for controlling the same: An optical device includes: a light source that emits laser beams; a detecting unit that detects the laser beams and converts light amounts of the detected laser beams into voltage values; a first storage unit that stores in advance a light amount to be output for each of the laser... Agent:
20120269214 - Passively q-switched microlaser: A passively Q-switched laser comprises a pump laser diode, a micro laser resonant cavity including a lasing medium and a saturable absorber, a filter and a photodiode. The lasing medium and saturable absorber are bonded together, and dielectric film is coated on the surfaces of the bonded body to form... Agent: Photop Suwtech, Inc.
20120269215 - Bias circuit of electro-absorption modulated laser and calibration method thereof: A bias circuit of an electro-absorption modulated laser and a calibration method thereof are provided. The bias circuit includes a drive circuit and a direct current bias voltage circuit. The drive circuit is used for providing a forward bias voltage to a laser diode in the electro-absorption modulated laser to... Agent: Zte Corporation
20120269216 - Optically-pumped surface-emitting semiconductor laser with heat-spreading compound mirror-structure: A gain-module for use in an OPS-laser includes a multilayer semiconductor gain-structure surmounting a multilayer compound mirror-structure. Within the multilayer compound mirror-structure is a relatively thick layer of diamond which serves as a heat-spreader.... Agent: Coherent, Inc.
20120269217 - Laser oscillator controller: Provided is a method for controlling a laser oscillator. Such a laser oscillator is applicable to a laser processing machine and includes a plurality of oscillator modules each adapted to be driven to oscillate a laser beam. Also, such a laser oscillator is configured to collect laser beams oscillated by... Agent: Murata Machinery, Ltd.
20120269218 - Stabilization of green bodies via sacrificial gelling agent during electrophoretic deposition: In one embodiment, a method for electrophoretic deposition of a three-dimensionally patterned green body includes suspending a first material in a gelling agent above a patterned electrode of an electrophoretic deposition (EPD) chamber, and gelling the suspension while applying a first electric field to the suspension to cause desired patterning... Agent: Lawrence Livermore National Security, LLC
20120269219 - Semiconductor laser device: A semiconductor laser according to the present invention comprises a λ/2 dielectric film (λ: in-medium wavelength of a dielectric film, for example, SiO2, Si3N4, Al2O3, and AlN) in contact with a facet of a resonator; and a first dielectric double layered film disposed on the dielectric film, which includes a... Agent: Mitsubishi Electric Corporation
20120269220 - Iii-nitride semiconductor laser device and method for fabricating iii-nitride semiconductor laser device: A Group III nitride semiconductor laser device includes a laser structure including a support substrate with a semipolar primary surface of a hexagonal Group III nitride semiconductor, and a semiconductor region thereon, and an electrode, provided on the semiconductor region, extending in a direction of a waveguide axis in the... Agent: Sumitomo Electric Industries, Ltd.
20120269221 - Interband cascade lasers with engineered carrier densities: Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of... Agent: The Government Of The United States Of America, As Represented By The Secretary Of The Navy
20120269222 - Nitride semiconductor laser and epitaxial substrate: A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to... Agent: Sumitomo Electric Industries, Ltd.
20120269223 - High-precision synchronization of pulsed gas-discharge lasers: Two excimer lasers have individual pulsing circuits each including a storage capacitor which is charged and then discharged through a pulse transformer to generate an electrical pulse, which is delivered to the laser to generate a light pulse. The time between generation of the electrical pulse and creation of the... Agent: Coherent Gmbh
20120269224 - Distributed feedback surface emitting laser: A photonic crystal surface emitting laser array reduces the occurrence of reflected feedback light while also reducing input of leaking light. The photonic crystal surface emitting laser array includes a plurality of first photonic crystal regions that cause laser oscillation, a second photonic crystal region that causes light diffraction to... Agent: Canon Kabushiki Kaisha10/18/2012 > 11 patent applications in 8 patent subcategories. categorized by USPTO classification
20120263196 - Ultrafast raman laser systems and methods of operation: A Raman laser system, the system comprising a resonator cavity comprising a plurality of reflectors, wherein at least one reflector is an output reflector adapted for outputting a pulsed output beam from the resonator cavity at a frequency corresponding to a Raman shifted frequency of the pump beam, wherein the... Agent:
20120263198 - Fiber laser device: When an output instruction is input to the control unit, the control unit controls the seed laser light source and the pumping light source to be either in a pre-pumped state or in an output state. In the pre-pumped state, laser light is not output from the seed laser light... Agent: Fujikura Ltd.
20120263197 - Power selective optical filter devices and optical systems using same: In an embodiment, a power selective optical filter device includes an input polarizer for selectively transmitting an input signal. The device includes a wave-plate structure positioned to receive the input signal, which includes at least one substantially zero-order, zero-wave plate. The zero-order, zero-wave plate is configured to alter a polarization... Agent:
20120263199 - Laser emitting pulses of variable period and stabilized energy: A laser device suitable for emitting pulses with a variable period and with stabilized energy includes: a resonant cavity including an amplifying medium presenting a stabilized gain G and suitable for emitting laser pulses at a wavelength λ, and a Q-switch, and a source of continuous pumping of the amplifying... Agent: Thales
20120263201 - Broad-area edge-emitting semiconductor laser with limited thermal contact: A diode-laser having an elongated diode-laser emitter is mounted on a relatively massive heat-sink. Two parallel grooves are machined into the heat-sink to leave a relatively narrow elongated ridge of the heat-sink between the grooves. The ridge has a width about equal to or narrower that the width of the... Agent: Coherent, Inc.
20120263200 - Laser module: A laser module includes: a heat sink that releases heat from a member in contact with the heat sink; a sub-mount substrate that is disposed on the heat sink and made of an insulating material; a feeding layer that is disposed on the sub-mount substrate; and a laser diode array... Agent: Mitsubishi Electric Corporation
20120263202 - Laser diode control device: A laser control device comprises a driver circuitry for supplying a drive current to a laser diode (LD). The device further comprises a digital storage for storing drive current values for a plurality of temperature conditions, and a central processing unit coupled to the digital storage for controlling the driver... Agent:
20120263203 - Semiconductor laser module and manufacturing method thereof: To reduce the stress imposed on an LD chip and to sufficiently secure the heat radiation property of the LD chip. An LD module includes a PLC board, an LD chip, and a solder bump. The PLC board includes a PLC electrode. The LD chip includes an LD electrode, and... Agent: Nec Corporation
20120263205 - Edge-emitting semiconductor laser: An edge emitting semiconductor laser comprising an active, radiation-generating zone (1), and an common waveguide (8), which is suitable for guiding the radiation generated in the active zone (1) within the semiconductor laser. The common waveguide (8) comprises a first n-doped layer (4) and a second n-doped layer (5), which... Agent:
20120263204 - Quantum cascade laser: A quantum cascade laser includes a substrate having a first surface, a second surface opposite the first surface, and a recess provided in the second surface; a semiconductor region provided on the first surface of the substrate; a ridge portion extending in one direction on the semiconductor region; a first... Agent: Sumitomo Electric Industries, Ltd.
20120263206 - Surface-emission laser diode and fabrication process thereof: A surface-emission laser diode includes a GaAs substrate, a cavity region, and upper and lower reflectors provided at a top part and a bottom part of the cavity region, the upper reflector and/or the lower reflector including a semiconductor Bragg reflector, at least a part of the semiconductor distributed Bragg... Agent: Ricoh Company, Ltd10/11/2012 > 4 patent applications in 3 patent subcategories. categorized by USPTO classification
20120257644 - Laser light emitting device and method of manufacturing the same, and fiber laser apparatus using the same: The laser light emitting device includes a glass rod having an input end and an output end. The glass rod has a core provided along the central axis thereof and a cladding covering the core. The refractive index of the core on the side of the input end is higher... Agent: Fujikura Ltd.
20120257647 - Cooling apparatus for optically pumped semiconductor laser: An OPS-chip is soldered mirror-structure-side down on an upper surface of diamond-heat spreader. A metal frame is also soldered to the upper surface of the heat-spreader. The lower surface of the diamond heat-spreader is either soldered to, or clamped against, a surface of a heat-sink. The dimensions of the frame... Agent: Coherent, Inc.
20120257646 - Thermal management system: Various embodiments are disclosed for a thermal management system and related method for selectively thermally isolating and thermally connecting a target component. One embodiment of a system includes a first component having a first surface proximate to a target component, and an electromagnet between the first surface and the target... Agent: Microsoft Corporation10/04/2012 > 16 patent applications in 10 patent subcategories. categorized by USPTO classification
20120250705 - Fiber lasers with devices capable of suppressing high-order mode mixing and generating high quality and low noise laser light: Techniques and devices for generating laser light that use large mode area fiber amplifiers and curved fiber sections to achieve desired operations in a fundamental fiber mode with high pulse quality and optical beam quality while reducing presence of high order fiber modes in continuous wave and pulsed laser devices.... Agent:
20120250706 - Transverse laser mode switching: A laser (100) for outputting laser radiation includes a lasing material (110) in a resonant cavity (20) adapted for supporting a given lasing mode of oscillation. The laser (100) furthermore has at least one laser mirror (124) including a transparent portion for transmitting only a part of a beam of... Agent:
20120250708 - Laser system and laser light generation method: A laser system may include a master oscillator that outputs pulsed laser light, an amplification device that amplifies the pulsed laser light outputted from the master oscillator, and a controller that controls the master oscillator and the amplification device. The master oscillator may have a pumping laser that outputs pumping... Agent: Gigaphoton Inc.
20120250709 - Laser system and laser light generation method: A laser system in this disclosure may include: a master oscillator configured to output pulsed laser light, a coherence reduction optical system configured to reduce coherence of the pulsed laser light from the master oscillator, and a controller configured to control the coherence reduction optical system so that a speckle... Agent: Gigaphoton Inc.
20120250710 - Laser system and laser light generation method: A laser system may include: a master oscillator configured to output pulsed laser light; an amplification device for amplifying the pulsed laser light from the master oscillator; a first timing detector configured to detect a first timing at which the master oscillator outputs the pulsed laser light; a second timing... Agent: Gigaphoton Inc.
20120250707 - Stabilization of pulsed mode seed lasers: A programmable tailored laser pulse generator including a pulsed seed laser source, a laser amplifier, and an optical power amplifier produces high power tailored laser pulses shaped in response to a programmable analog tailored pulse signal applied to a seed laser (first embodiment) or an external modulator of continuous-wave seed... Agent: Electro Scientific Industries, Inc.
20120250711 - Optical module: An optical module providing higher reliability during high-speed light modulation and a lower bit error rate when built into a transmitter (transceiver). An optical module contains a taper mirror for surface emission of output light, an optical modulator device, and an optical modulation drive circuit, and the optical modulator device... Agent: Hitachi, Ltd.
20120250712 - Diode laser: A diode laser is provided with wavelength stabilization and vertical collimation of the emitted radiation, which allows a small distance of the volume Bragg grating from the emitting surface, a small vertical diameter of the collimated beam and also compensation for manufacturing tolerances affecting the shape of the grating and... Agent: Forschungsverbund Berlin E. V.
20120250713 - Correction circuit, driving circuit, light emitting apparatus, and method of correcting electric current pulse waveform: A correction circuit includes: a temperature rise derivation section which derives a temperature rise amount of a first channel of a multi-channel surface-emitting laser array due to the heating by at least one or a plurality of second channels adjacent to the first channel out of all channels included in... Agent: Sony Corporation
20120250717 - Edge emitting semiconductor laser: An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, wherein the waveguide region includes a first waveguide layer, a second waveguide layer and an active layer arranged between the first waveguide layer and the second waveguide layer and generates laser radiation, the waveguide region is arranged... Agent: Osram Opto Semiconductors Gmbh
20120250716 - Flexible microcavity structure made of organic materials using spin-coating technique and methods of making: A flexible microcavity structure made of organic materials using spin-coating technique for allowing large area structures using a roll-to-roll process. The structure includes at least one first polymer layer, at least one second polymer layer, and a cavity layer. The cavity layer has quantum dots embedded therein fir realizing an... Agent: Research Foundation Of The City University Of New York
20120250715 - Optoelectronic semiconductor component: In at least one embodiment of the optoelectronic semiconductor component (1), the latter comprises an epitaxially grown semiconductor body (2) with at least one active layer (3). Furthermore, the semiconductor body (2) of the semiconductor component (1) comprises at least one barrier layer (4), the barrier layer (4) directly adjoining... Agent: Osram Opto Semiconductors Gmbh
20120250714 - Semiconductor light emitting device, semiconductor light emitting apparatus, and method for manufacturing semiconductor light emitting device: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer and a laser resonator. The first semiconductor layer includes a first portion and a second portion juxtaposed with the first portion. The laser resonator is provided on the first portion and has a ring-shaped resonator structure... Agent: Kabushiki Kaisha Toshiba
20120250718 - Multi-wavelength semiconductor laser device: A multi-wavelength semiconductor laser device includes: first and second device sections monolithically formed on a substrate; and a rear end face film formed together on a rear end face of each of the first and second device sections. The first device section is a light-emitting device section having an oscillation... Agent: Sony Corporation
20120250719 - Transition-metal-doped thin-disk laser: A laser includes a Ti:sapphire gain-medium in the form of a thin-disk. The thin-disk gain-medium is optically pumped by pump-radiation pulses having a wavelength in the green region of the electromagnetic spectrum. The pump-radiation pulses have a duration less than twice the excited-state lifetime of the gain-medium.... Agent: Coherent, Inc.
20120250720 - Amplification of long-range surface plasmons with reduced noise: An optical amplifier suitable for coherently amplifying surface plasmon-polariton waves with high gain and low noise over visible and infrared wavelengths. The optical amplifier is comprised of a thin strip of material having a complex permittivity with a negative real part, in contact on at least one side with an... Agent: The University Of OttawaPrevious industry: Multiplex communications
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