SEARCH:      Monitor Keywords |  Custom RSS

Coherent light generators August inventions list 08/12

20120219020 - Environmentally stable passively modelocked fiber laser pulse source: The present invention is directed to providing an environmentally stable, ultra-short pulse source. Exemplary embodiments relate to passively modelocked ultra-short fiber lasers which are insensitive to temperature variations and which possess only negligible sensitivity to pressure variations. Further, exemplary embodiments can be implemented in a cost-effective manner which render them... Agent: Imra America, Inc.

20120219021 - Laser display method and system: A laser display system and method that includes some or all of the following parts: an optical apparatus that includes two spatial light modulators and a laser, and switches the laser between the light modulators; two lasers that combine pulses to illuminate one spatial light modulator; controlling a laser Q-switch... Agent: Laser Light Engines

20120219025 - Method and device for adjusting a tunable laser of an optical network element: A method and a device are provided for adjusting a tunable laser of an optical network element. A wavelength of the tunable laser is adjusted by varying a current driving the tunable laser. The wavelength of the tunable laser is adjusted by varying a temperature of the tunable laser or... Agent: Nokia Siemens Networks Oy

20120219023 - Tunable laser: A tunable laser includes an optical cavity comprising a first and second mirror. A gain medium is positioned in the optical cavity that generates stimulated emission in the optical cavity when biased. A thermally tunable optical filter is positioned in the optical cavity that is heated to a temperature that... Agent: Aegis Lightwave, Inc.

20120219024 - Wavelength tunable laser device, optical module, and method of controlling wavelength tunable laser: the controller 13 obtains temperature information a of the wavelength tunable laser 11 from the temperature detecting element 12, calculates wavelength tunable control parameters d and e and light loss control parameters b1 and b2 based on the temperature information a, controls the wavelength tunable mechanisms 112 and 113 based... Agent:

20120219022 - Wavelength-tunable light source: A wavelength-tunable light source includes a quantum cascade laser that emits light from a first end and a second end, an optical system that collimates the light emitted from the first end, a first reflecting section on which the light collimated by the optical system is made incident, and a... Agent: Hamamatsu Photonics K.k.

20120219026 - Uv-green converting fiber laser using active tapers: Nonlinear optical systems include fiber amplifiers using tapered waveguides such as optical fibers that permit multimode propagation but produce amplification and oscillation in a fundamental mode. The tapered waveguides generally are provided with an active dopant that is pumped with an optical pump source such as one or more semiconductor... Agent: Nlight Photonics Corporation

20120219027 - Uv laser system: In a UV laser system, the problem of deposition of residues of organic substances on the surfaces of optical components is avoided so that the reduction in the laser output can be avoided. A wavelength converting crystal (10) used for the generation of a UV laser light is provided with... Agent: Showa Optronics Co., Ltd.

20120219028 - Ceramic slab, free-space and waveguide lasers: A laser may comprise a ceramic body including a first wall and a second wall opposite the first wall, a first mirror positioned at first ends of the first and second walls, a second mirror positioned at second ends of the first and second walls opposite the first ends, the... Agent:

20120219029 - Pulsed-multiline excitation for color-blind fluorescence detection: The present invention provides a technology called Pulse-Multiline Excitation or PME. This technology provides a novel approach to fluorescence detection with application for high-throughput identification of informative SNPs, which could lead to more accurate diagnosis of inherited disease, better prognosis of risk susceptibilities, or identification of sporadic mutations. The PME... Agent:

20120219030 - Apparatus and method for purging and recharging excimer laser gases: A method of recharging an excimer laser Includes opening an outlet in a chamber containing spent laser gas at a first pressure, opening an inlet in the chamber, the inlet in communication with a laser gas container at a second pressure higher than the first pressure, and flowing fresh laser... Agent: Photomedex

20120219031 - Laser processing method and apparatus: A laser processing method processes spots on an object in a scan area with a laser beam emitted from a laser emitter. The method includes steps of covering the scan area in such a way as to transmit the laser beam and define a closed space over the scan area,... Agent: Nhk Spring Co., Ltd.

20120219032 - Extendable electrode for gas discharge laser: A movable electrode assembly for use in a laser system, includes a first electrode having a first discharge surface, a second electrode having a second discharge surface. The second electrode being arranged opposite from the first electrode. The second discharge surface being spaced apart from the first discharge surface by... Agent:

20120213235 - Optical couplers and active optical modules using the same: Provided are an optical coupler and an active optical module including the same. The optical coupler includes at least one first optical fiber, a second optical fiber, and a hollow optical block. The at least one first optical fiber transfers pump light. The second optical fiber includes a cladding with... Agent: Electronics And Telecommunications Research Institute

20120213236 - Optical amplifier for microwave bursts: The various laser architectures described herein provide increased gain of optical energy as well as compensation of optical phase distortions in a thin disk gain medium. An optical amplifier presented herein provides for scalable high energy extraction and gains based on a number of passes of the signal beam through... Agent:

20120213237 - driver for supplying modulated current to a laser: A driver device for a laser includes a control device configured to generate a control current, an NPN differential amplifier connected to the control device and configured to superimpose a modulation current onto the control current to generate a combined current, and a laser activation switch coupled to the output... Agent: Tyco Electronics Corporation

20120213238 - High-power laser unit wherein laser output can be accurately corrected: A high-power laser unit capable of accurately correcting laser output from low to rated outputs, even when the laser unit has a laser power monitor which may be affected by environmental factors inside or outside the laser unit, by effectively reducing environmental factors. The laser unit has a laser power... Agent: Fanuc Corporation

20120213239 - Semiconductor laser chip package with encapsulated recess molded on substrate and method for forming same: A laminate leadless carrier package having a semiconductor chip mounted at the edge of a recess region in a substrate supporting the chip, the substrate having a plurality of conductive and dielectric layers, a wire bond coupled to the optoelectronic chip and a wire bond pad positioned on the top... Agent:

20120213240 - Strain balanced laser diode: According to the concepts of the present disclosure, laser diode waveguide configurations are contemplated where the use of Al in the waveguide layers of the laser is presented in the form of InGaN/Al(In)GaN waveguiding superstructure comprising optical confining wells (InGaN) and strain compensating barriers (Al(In)GaN). The composition of the optical... Agent:

20120213241 - Broad area laser having an epitaxial stack of layers and method for the production thereof: A broad stripe laser (1) comprising an epitaxial layer stack (2), which contains an active, radiation-generating layer (21) and has a top side (22) and an underside (23). The layer stack (2) has trenches (3) in which at least one layer of the layer stack (2) is at least partly... Agent: Osram Opto Semiconductors Gmbh

20120213242 - Semiconductor laser device: A semiconductor laser device includes a nitride semiconductor laminate structure including an n-type clad layer, an n-type guide layer formed on the n-type clad layer, a light emitting layer formed on the n-type guide layer and a p-type semiconductor layer formed on the light emitting layer. The nitride semiconductor laminate... Agent: Rohm Co., Ltd.

20120213243 - Vertical cavity surface emitting laser with undoped top mirror: A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate, and a periodically doped conduction layer is coupled to the undoped top minor. A periodically doped spacer layer is coupled to an active region. An undoped bottom minor coupled to the periodically... Agent: Finisar Corporation

20120207184 - Handheld device for treating oral ulcers and sores: A device for treating oral ulcers or sores comprises a light source for illuminating a sore or ulcer to be treated; a laser diode for directing laser energy at the sore or ulcer; a regulated power supply for powering the light source and the laser diode at selected power levels;... Agent:

20120207185 - Method of manufacturing semiconductor laser, semiconductor laser, optical pickup, optical disk device, method of manufacturing semiconductor device, semiconductor device, and method of growing nitride type group iii-v compound semiconductor layer: A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga, the method includes the steps of:... Agent: Sony Corporation

20120207186 - Terahertz quantum cascade lasers (qcls): Quantum cascade lasers (QCLs), and methods of manufacture of QCLs, comprising an active portion. In some embodiments, the active portion can comprise: a plurality of tensiley strained quantum barrier layers, each comprising GayIn1-yAs; and a plurality of compressively strained quantum well layers, each comprising GaxIn1-xAs. In some embodiments, the active... Agent: The Board Of Regents Of The University Of Texas System

20120207187 - Semiconductor laser module: A semiconductor laser module includes a semiconductor laser unit and a light selecting unit. The semiconductor laser unit includes a semiconductor laser substrate and a plurality of distributed reflector semiconductor laser devices formed on the semiconductor laser substrate in an array. Each of the distributed reflector semiconductor laser devices is... Agent: Furukawa Electric Co., Ltd.

20120201259 - Submount, submount assembly, and submount assembling method: A submount having a structure and a configuration resistant to an increase in manufacturing cost and a reduction in yields or reliability, and including an oblique waveguide is provided. A submount having a first surface and allowing a semiconductor light-emitting element including a waveguide to be fixed on the first... Agent: Sony Corporation

20120201260 - Symmetrical, direct coupled laser drivers: Symmetrical, direct coupled laser drivers for high frequency applications. The laser drivers are in integrated circuit form and use a minimum of relatively small (low valued) external components for driving a laser diode coupled to the laser driver through transmission lines. An optional amplifier may be used to fix the... Agent: Maxim Integrated Products, Inc.

20120201261 - System and method to regulate high current radiation sources: Disclosed is a high current radiation system. The system includes a high current radiation source to generate radiation and an analog circuit to generate, based, at least in part, on an input signal representative of the present current level delivered to the high current radiation source and a user-controlled input... Agent: Lumenis Ltd.

20120201262 - Edge-emitting semiconductor laser: An edge emitting semiconductor laser (1) is specified, comprising an n-side waveguide region (21) and a p-side waveguide region (22); an active zone (20) for generating electromagnetic radiation; at least one reflection layer (24) in the n-side waveguide region (21), wherein the active zone (20) is arranged between the two... Agent:

20120201263 - High-power quantum cascade lasers with active-photonic-crystal structure: Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 μm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure; and a plurality of laterally-spaced trench regions extending transversely through the... Agent: Wisconsin Alumni Research Foundation

20120201264 - Light emitting device with varying barriers: An emitting device including an active region having quantum wells alternating with barriers of varying compositions is provided. The barriers can be composed of a group III-nitride based material, in which a molar fraction of one or more of the group III elements in two barriers adjacent to a single... Agent:

20120201265 - Fabrication of lasing microcavities consisting of highly luminescent colloidal nanocrystals: A method of producing a lasing microsource of colloidal nanocrystals. The method includes the steps of preparing a nanocrystal solution in a solvent; depositing at least a drop of the nanocrystals solution with a drop volume below 1 nl on a flat substrate; and evaporating the solvent to dryness thereby... Agent: Fondazione Istituto Italiano Di Tecnologia

20120195330 - Methods and systems for fiber delivery of high peak power optical pulses: Methods and systems for delivery of high peak power optical pulses through optical fiber are disclosed. Raman soliton generation is utilized to maintain the properties of the pulses in the delivery fiber. The apparatus can comprise any high peak power pulse source and delivery fiber supporting Raman soliton generation.... Agent: Imra America, Inc.

20120195332 - External cavity widely tunable laser using a silicon resonator and micromechanically adjustable coupling: A widely tunable laser is described where a compound semiconductor gain chip is coupled to a waveguide filter fabricated on silicon. The filter has two resonators with different free-spectral-ranges, such that Vernier tuning between the filters can be used to provide a single wavelength of light feedback into the gain... Agent:

20120195331 - Laser processing of conductive links: A laser system for processing conductive link structures includes a seed laser generating a seed laser beam. The seed laser is sliced by a modulator into a user configurable series of pulses and the pulses are optically amplified and applied to a conductive link structure. Preferably, the bandwidth of the... Agent: Gsi Lumonics Corporation

20120195333 - Broadband pump laser stabilized cascading wavelength conversion for generating red, green and blue laser radiations: A laser-wavelength conversion system with a broad temperature acceptance bandwidth is provided. The laser system includes a broad-band pump laser driving one or several cascaded laser wavelength converters, wherein the pump laser spectrum is broader than the spectral acceptance bandwidth of at least one of the laser wavelength converters. The... Agent: National Tsing Hua University

20120195334 - Laser material processing tool: An apparatus for laser drilling including a laser beam emitter disposed within a housing having at least one laser beam outlet and at least one purge fluid outlet. At least one actuated nozzle is disposed within the housing for providing a purge fluid through the purge fluid outlet and having... Agent: Gas Technology Institute

20120195335 - Device comprising a laser: An embodiment of the invention relates to a device comprising a laser and a waveguide stripe or netlike hexagonal stripe structure, which allows propagation of multitude of the lateral modes in the waveguide stripe or stripe structure, wherein the waveguide stripe has at least one corrugated edge section along its... Agent: Technische Universitat Berlin

20120195337 - Semiconductor laser: A semiconductor laser includes: a DBR (Distributed Bragg Reflector) region having a diffraction grating; a FP (Fabry-Perot) region having no diffraction grating; and an optical waveguide section placed between the DBR region and an outputting end surface. A length of the optical waveguide section is longer than a length of... Agent: Mitsubishi Electric Corporation

20120195338 - Semiconductor laser device and manufacturing method thereof: A semiconductor laser device includes a p-type clad layer and an n-type clad layer, a p-side guide layer and an n-side guide layer interposed between the p-type clad layer and the n-type clad layer, and an active layer interposed between the p-side guide layer and the n-side guide layer. The... Agent: Rohm Co., Ltd.

20120195339 - Semiconductor laser device and manufacturing method thereof: A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The... Agent: Rohm Co., Ltd.

20120195336 - Semiconductor laser device in which an edge-emitting laser is integrated with a reflector to form a surface-emitting semiconductor laser device: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser formed in various layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, and a reflector formed in or on an... Agent: Avago Technologies FiberIP(singapore) Pte. Ltd.

20120195340 - Solid state lighting devices comprising quantum dots: Solid state lighting devices containing quantum dots dispersed in polymeric or silicone acrylates and deposited over a light source. Solid state lighting devices with different populations of quantum dots either dispersed in matrix materials or not are also provided. Also provided are solid state lighting devices with non-absorbing light scattering... Agent:

20120195341 - System, method and apparatus for internal polarization rotation for horizontal cavity, surface emitting laser beam for thermally assisted recording in disk drive: A laser, such as a horizontal cavity surface emitting laser, with internal polarization rotation may be used in thermally assisted recording in hard disk drives. The desired polarization of the laser may be accomplished with two beam reflections off of facets within the laser. The facets may be formed in... Agent: Hitachi Global Storage Technologies Netherlands B. V.

20120195342 - Configuration for multiwavelength emission with a co2 laser: Multiple independent electrode sets of a CO2 gas laser are arranged in series within a single optical resonator with each electrode set energized by an independent power source. The total length of the electrode sets together and their maximum power are optimized for output energy at the weakest laser wavelength,... Agent:

20120195343 - Eye-safe q-switched short pulse fiber laser: A laser includes a pump source that provides pump energy at a first wavelength and a laser cavity. The laser cavity includes a laser gain medium that receives the pump energy from the pump source and creates gain at a second wavelength different from the first wavelength, and a mode... Agent: Raytheon Company